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arxiv: 2604.04446 · v1 · submitted 2026-04-06 · ❄️ cond-mat.mtrl-sci

Atomic Structure of Grain Boundaries, Dislocations and Associated Strain in Templated Co-evaporated Photoactive Halide Perovskites

Pith reviewed 2026-05-10 20:23 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci
keywords grain boundariesedge dislocationsstrain fieldshalide perovskiteselectron microscopystacking faultsVolmer-Weber growthsolar cells
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The pith

Templated perovskite films exhibit <001> orientation with atomic-scale high- and low-angle grain boundaries plus edge dislocations carrying opposing strain fields.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The study applies tailored low-dose electron microscopy to map defects inside templated FA0.9Cs0.1PbI3-xClx films used for solar cells. Grains align preferentially along the <001> zone axis while rotating arbitrarily about that axis, consistent with Volmer-Weber island growth. High-angle and low-angle grain boundaries are resolved atom-by-atom, and edge dislocations appear with clear compressive strain on one side of the core and tensile strain on the other. Some dislocations also terminate stacking faults. These observations identify which boundaries and intra-grain defects are most likely to trap charges or shift local band gaps.

Core claim

In templated FA0.9Cs0.1PbI3-xClx films the material displays a preferred crystallographic orientation along the <001> zone axis together with arbitrary grain rotations about that axis. The atomic structures of the resulting high-angle and low-angle grain boundaries are determined directly. Edge dislocations are observed together with their strain fields, which show compression on one side of the dislocation core and tension on the opposite side. Dislocations associated with stacking faults are also present. These atomic-level details indicate which grain boundaries and intra-grain defects are probable recombination centres or band-gap modifiers in perovskite solar-cell devices.

What carries the argument

Low-dose electron microscopy that resolves the atomic arrangement of grain boundaries and the local lattice strain surrounding edge-dislocation cores.

If this is right

  • Knowing the atomic character of high-angle versus low-angle boundaries allows targeted passivation of the more harmful ones.
  • The measured strain asymmetry around dislocation cores implies local band-gap shifts that can be mapped to device voltage losses.
  • Dislocations tied to stacking faults add a second class of intra-grain recombination sites that must be reduced during growth.
  • The Volmer-Weber growth signature explains why templating improves orientation yet still leaves rotational disorder about the <001> axis.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • If these specific defects dominate recombination, then growth recipes that limit grain rotation angles could suppress high-angle boundaries without changing the template.
  • The same imaging approach could be applied to other halide compositions to test whether dislocation strain fields are universal.
  • Correlating the density of observed edge dislocations with measured open-circuit voltage in finished devices would quantify their contribution to performance limits.

Load-bearing premise

The low-dose imaging methods capture the true atomic positions and strain fields without beam damage or preparation artifacts.

What would settle it

If higher-dose or alternative low-dose imaging of the same films or of non-templated films reveals different boundary structures or absent strain contrast, the reported defect geometries would not represent the native material.

Figures

Figures reproduced from arXiv: 2604.04446 by Huyen T Pham, Joanne Etheridge, Michael B Johnston, Sergey Gorelick, Siyu Yan, Weilun Li, Zhou Xu.

Figure 1
Figure 1. Figure 1: 4D-STEM of the FA0.9Cs0.1PbI3-xClx film. (a) The geometry of the 4D-STEM experiment in the SEM. (b) Subset of the series of 40,000 diffraction patterns of the FA0.9Cs0.1PbI3-xClx film. (c) Reconstructed dark-field image of the FA0.9Cs0.1PbI3-xClx film from the 4D-STEM dataset. (d, e) Diffraction patterns generated from the positions indicated by the red and blue dots in (c), respectively. (f) In-plane grai… view at source ↗
Figure 2
Figure 2. Figure 2: Atomic-resolution STEM images revealing the GBs in a FA0.9Cs0.1PbI3-xClx thin film with a variety of GB angles. (a, c, e, g, i, k) Low-dose low-angle annular dark field (LAADF) STEM image of GBs of FA0.9Cs0.1PbI3-xClx film is filtered with a Butterworth filter to enhance contrast. (b, d, f, h, j, l) The FT corresponding to the LAADF STEM images in (a, c, e, g, i, k), respectively, reveal the relative rotat… view at source ↗
Figure 3
Figure 3. Figure 3: Σ5 (310)/[001] GBs in FA0.9Cs0.1PbI3-xClx film. (a) Low-dose LAADF-STEM image showing atomic resolution detail of the Σ5 (310)/[001] GBs, a Butterworth filter has been applied to enhance contrast. (b) Zoomed-in low-dose LAADF-STEM image of the region marked by the red square in Figure a, showing the atomic structure at the boundary of the Σ5 (310)/[001] GBs. (c) The FTs corresponding to the LAADF image in … view at source ↗
Figure 4
Figure 4. Figure 4: Low-angle GB and associated edge dislocations in FA0.9Cs0.1PbI3-xClx film. (a) Low-dose atomic-resolution LAADF-STEM image of a low-angle grain boundary, with a misorientation angle of 5 ◦ . The image is filtered with a Butterworth filter to enhance contrast. (b) Zoomed-in low-dose LAADF￾STEM image of the region marked by the red square in (a), showing the atomic structure of the edge dislocation (c) FTs o… view at source ↗
Figure 5
Figure 5. Figure 5: 90-degree {110} planar GBs (or pseudo-twin boundaries) and associated {100} stacking faulty and dislocations in the FA0.9Cs0.1PbI3-xClx film. (a) Low-dose high-resolution LAADF-STEM image of the zig-zag 90-degree planar GB in cubic FA0.9Cs0.1PbI3-xClx grains along the ⟨001⟩ zone axis. The image is filtered with a Butterworth filter to enhance contrast. (b) LAADF-STEM image with 90-degree {110} planar GB hi… view at source ↗
Figure 6
Figure 6. Figure 6: The interface between cubic perovskite FA0.9Cs0.1PbI3-xClx and trigonal PbI2. (a) Low-dose atomic-resolution LAADF-STEM image showing the trigonal PbI2 domain within the FA0.9Cs0.1PbI3- xClx lattice. The image is filtered with a Butterworth filter to enhance contrast. The pink lines mark the location of some of the edge dislocations across the interface. (b) FTs of the low-dose LAADF-STEM image shown in (a… view at source ↗
read the original abstract

Structural defects, particularly grain boundaries, play a crucial role in governing charge transport and the optoelectronic properties of metal halide perovskites, thereby limiting the performance of devices. Solar cells incorporating templated FA0.9Cs0.1PbI3-xClx show significant improvements in grain orientation and steady-state power conversion efficiency; however, the underlying mechanisms remain unclear. In this study, we address this gap by employing a suite of tailored low-dose electron microscopy techniques to investigate the templated FA0.9Cs0.1PbI3-xClx film, revealing that it exhibits a preferred crystallographic orientation along the <001> zone axis, with arbitrary grain rotations about that axis, indicative of a Volmer-Weber growth mechanism. We determine the atomic structure of the resulting high-angle and low-angle grain boundaries. We also reveal the presence of edge dislocations and their associated strain fields, demonstrating the compressive strain on one side of the dislocation core and tensile strain on the opposite side. Furthermore, we find dislocations associated with stacking faults. These atomic-level insights uncover which grain boundaries and intra-grain defects are likely to act as recombination centres or modify band gaps, crucial for understanding which defects influence the performance of perovskite solar cell devices.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

1 major / 3 minor

Summary. The manuscript reports an experimental investigation of templated co-evaporated FA0.9Cs0.1PbI3-xClx halide perovskite films using tailored low-dose electron microscopy. It claims a preferred <001> zone-axis orientation with arbitrary grain rotations about this axis (consistent with Volmer-Weber growth), provides atomic-resolution images and structural models of high-angle and low-angle grain boundaries, identifies edge dislocations with associated strain fields showing compressive strain on one side of the core and tensile strain on the other, and documents dislocations linked to stacking faults. These observations are interpreted as identifying defects likely to influence recombination or band gaps in perovskite solar cells.

Significance. If the reported atomic structures and strain fields are native to the film rather than beam-induced, the work supplies direct, atomically resolved evidence of defect geometries and local lattice distortions that are difficult to obtain by other means. Such data can help correlate specific grain-boundary and dislocation configurations with optoelectronic losses, thereby informing strategies to mitigate performance-limiting defects in templated perovskites. The strain asymmetry around dislocation cores is a particularly useful observation for modeling local band-edge shifts.

major comments (1)
  1. Abstract and Methods: The central claim that the observed grain-boundary atomic structures, dislocation cores, and strain fields are representative of the as-grown film rests on the assertion of 'tailored low-dose' imaging, yet no quantitative validation (dose-rate series, cumulative-dose thresholds, pre-/post-exposure comparisons, or cross-checks with non-EM methods) is provided to rule out beam-induced ion migration, vacancy formation, or structural relaxation. Halide perovskites are known to be highly beam-sensitive; without such controls the link between the imaged defects and device performance cannot be established with certainty.
minor comments (3)
  1. Results section: Strain maps are presented qualitatively; quantitative values (e.g., percentage strain, error estimates from GPA or similar analysis) and the number of independent dislocation cores examined should be reported to allow assessment of reproducibility.
  2. Figure captions and text: The distinction between high-angle and low-angle grain boundaries is described but the misorientation angles and corresponding atomic models are not tabulated or systematically compared to theoretical predictions (e.g., coincidence-site-lattice models), which would strengthen the structural assignments.
  3. Discussion: The manuscript links specific defects to recombination centers or band-gap modification but does not provide supporting evidence (e.g., local density-of-states maps or device-level correlations); this interpretive step should be clearly labeled as hypothesis rather than direct observation.

Simulated Author's Rebuttal

1 responses · 0 unresolved

We thank the referee for the positive evaluation of the significance of our findings and for the constructive comment on validating the low-dose imaging conditions. We address the concern point by point below and will revise the manuscript to strengthen this aspect.

read point-by-point responses
  1. Referee: Abstract and Methods: The central claim that the observed grain-boundary atomic structures, dislocation cores, and strain fields are representative of the as-grown film rests on the assertion of 'tailored low-dose' imaging, yet no quantitative validation (dose-rate series, cumulative-dose thresholds, pre-/post-exposure comparisons, or cross-checks with non-EM methods) is provided to rule out beam-induced ion migration, vacancy formation, or structural relaxation. Halide perovskites are known to be highly beam-sensitive; without such controls the link between the imaged defects and device performance cannot be established with certainty.

    Authors: We agree that explicit quantitative validation is necessary to firmly establish that the reported structures are native rather than beam-induced. In the revised manuscript we will expand the Methods section with specific details on the electron dose rates and cumulative doses employed under our tailored low-dose protocols. We will also add pre- and post-exposure image comparisons for representative areas, which show no detectable structural relaxation or ion migration within the imaging window. Although a systematic dose-rate series was not performed, the observed grain-boundary and dislocation configurations are reproducible across multiple samples and sessions and are consistent with the expected Volmer-Weber growth mode and theoretical models of perovskite defects. We will incorporate a brief discussion of these controls together with references to established beam-damage thresholds for FA-based perovskites. These additions will directly address the concern and reinforce the connection to optoelectronic performance. revision: yes

Circularity Check

0 steps flagged

No significant circularity: purely observational experimental study with no derivations or self-referential logic

full rationale

The paper is an experimental imaging study that reports direct observations of atomic structures, grain boundaries, dislocations, and strain fields in a perovskite film using low-dose electron microscopy. No equations, derivations, parameter fitting, predictions, or first-principles results are present in the abstract or described claims. Central findings rest on empirical imaging data rather than any chain that reduces to inputs by construction. No self-citations, ansatzes, or uniqueness theorems are invoked in a load-bearing manner. The study is self-contained against external benchmarks as a set of observational results, with no reduction of outputs to fitted or self-defined inputs.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

This is an experimental microscopy study. No free parameters or invented entities are introduced. The central claims rest on standard domain assumptions about imaging fidelity in beam-sensitive materials.

axioms (1)
  • domain assumption Low-dose electron microscopy techniques can image the atomic structure of beam-sensitive halide perovskites without introducing significant artifacts or altering the native defect configurations.
    Invoked throughout the study to justify that observed grain boundaries, dislocations, and strain fields represent the true material state.

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Works this paper leans on

56 extracted references · 56 canonical work pages

  1. [1]

    J. Gong, L. Schneider, Y. Liu, Adv. Sustain. Syst. 2026, 10

  2. [2]

    X. Liu, B. Zheng, L. Shi, S. Zhou, J. Xu, Z. Liu, J. S. Yun, E. Choi, M. Zhang, Y. Lv, W. H. Zhang, J. Huang, C. Li, K. Sun, J. Seidel, M. He, J. Peng, X. Hao, M. Green, Nat. Photonics 2023, 17, 96

  3. [3]

    Van Reenen, M

    S. Van Reenen, M. Kemerink, H. J. Snaith, J. Phys. Chem. Lett. 2015, 6, 3808

  4. [4]

    Saliba, T

    M. Saliba, T. Matsui, J. Y. Seo, K. Domanski, J. P. Correa -Baena, M. K. Nazeeruddin, S. M. Zakeeruddin, W. Tress, A. Abate, A. Hagfeldt, M. Grätzel, Energy Environ. Sci. 2016, 9, 1989

  5. [5]

    Duong, H

    T. Duong, H. K. Mulmudi, H. Shen, Y. L. Wu, C. Barugkin, Y. O. Mayon, H. T. Nguyen, D. Macdonald, J. Peng, M. Lockrey, W. Li, Y. B. Cheng, T. P. White, K. Weber, K. Catchpole, Nano Energy 2016, 30, 330

  6. [6]

    Bella, G

    F. Bella, G. Griffini, J. P. Correa -Baena, G. Saracco, M. Grätzel, A. Hagfeldt, S. Turri, C. Gerbaldi, Science. 2016, 354, 203

  7. [7]

    H. T. Pham, Y. Yin, G. Andersson, K. J. Weber, T. Duong, J. Wong-Leung, Nano Energy 2021, 87. 23

  8. [8]

    X. Shen, B. M. Gallant, P. Holzhey, J. A. Smith, K. A. Elmestekawy, Z. Yuan, P. V. G. M. Rathnayake, S. Bernardi, A. Dasgupta, E. Kasparavicius, T. Malinauskas, P. Caprioglio, O. Shargaieva, Y. H. Lin, M. M. McCarthy, E. Unger, V. Getautis, A. Widmer-Cooper, L. M. Herz, H. J. Snaith, Adv. Mater. 2023, 35

  9. [9]

    Q. Chen, H. Zhou, Y. Fang, A. Z. Stieg, T. Bin Song, H. H. Wang, X. Xu, Y. Liu, S. Lu, J. You, P. Sun, J. McKay, M. S. Goorsky, Y. Yang, Nat. Commun. 2015, 6

  10. [10]

    Pylnev, R

    M. Pylnev, R. Nishikubo, F. Ishiwari, A. Wakamiya, A. Saeki, Adv. Opt. Mater. 2024, 12

  11. [11]

    J. Park, J. Kim, H. S. Yun, M. J. Paik, E. Noh, H. J. Mun, M. G. Kim, T. J. Shin, S. Il Seok, Nature 2023, 616, 724

  12. [12]

    Zhang, S

    J. Zhang, S. Tang, M. Zhu, Z. Li, Z. Cheng, S. Xiang, Z. Zhang, Energy Environ. Mater. 2024, 7

  13. [13]

    Y. Guo, Q. Wang, W. A. Saidi, J. Phys. Chem. C 2017, 121, 1715

  14. [14]

    Zhang, E

    P. Zhang, E. Stippell, Y. Chen, X. Du, Z. Hou, O. V. Prezhdo, W. Li, Nano Lett. 2025, 25, 14140

  15. [15]

    M. Hao, Y. Zhou, Joule 2024, 8, 913

  16. [16]

    J. Kim, S. H. Lee, J. H. Lee, K. H. Hong, J. Phys. Chem. Lett. 2014, 5, 1312

  17. [17]

    A. J. Knight, L. M. Herz, Energy Environ. Sci. 2020, 13, 2024

  18. [18]

    Uller Rothmann, J

    M. Uller Rothmann, J. S. Kim, J. Borchert, K. B. Lohmann, C. M. O’Leary, A. A. Sheader, L. Clark, H. J. Snaith, M. B. Johnston, P. D. Nellist, L. M. Herz, Science. 2020, 370

  19. [19]

    W. Li, M. Hao, A. Baktash, L. Wang, J. Etheridge, Nat. Commun. 2023, 14

  20. [20]

    S. Chen, C. Wu, Q. Shang, Z. Liu, C. He, W. Zhou, J. Zhao, J. Zhang, J. Qi, Q. Zhang, X. Wang, J. Li, P. Gao, Acta Mater. 2022, 234

  21. [21]

    K. Song, L. Liu, D. Zhang, M. P. Hautzinger, S. Jin, Y. Han, Adv. Energy Mater. 2020, 10

  22. [22]

    W. Luo, Y. S. Khoo, P. Hacke, V. Naumann, D. Lausch, S. P. Harvey, J. P. Singh, J. Chai, Y. Wang, A. G. Aberle, S. Ramakrishna, Energy Environ. Sci. 2017, 10, 43

  23. [23]

    S.-H. Yoo, K. T. Butler, A. Soon, A. Abbas, J. M. Walls, A. Walsh, Appl. Phys. Lett. 2014. 24

  24. [24]

    W. Li, M. U. Rothmann, Y. Zhu, W. Chen, C. Yang, Y. Yuan, Y. Y. Choo, X. Wen, Y. B. Cheng, U. Bach, J. Etheridge, Nat. Energy 2021, 6, 624

  25. [25]

    W. Li, Q. Yuan, Y. Chen, J. R. S. Lilly, M. R. Filip, L. M. Herz, M. B. Johnston, J. Etheridge, Adv. Mater. 2025, 37

  26. [26]

    L. Wang, L. Li, S. Jia, W. Meng, Y. Cheng, Z. Liu, L. Li, S. Yan, Y. Gao, J. Wang, J. Tang, Adv. Funct. Mater. 2023, 33

  27. [27]

    Y.-H. Song, J. Ge, L.-B. Mao, K.-H. Wang, X.-L. Tai, Q. Zhang, L. Tang, J.-M. Hao, J.- S. Yao, J.-J. Wang, T. Ma, J. -N. Yang, Y.-F. Lan, X.-C. Ru, L.-Z. Feng, G. Zhang, Y. Lin, Q. Zhang, H.-B. Yao, Sci. Adv. 2022, 8, eabq2321

  28. [28]

    S. Paul, E. Bladt, A. F. Richter, M. Döblinger, Y. Tong, H. Huang, A. Dey, S. Bals, T. Debnath, L. Polavarapu, J. Feldmann, Angew. Chem. 2020, 132, 6860

  29. [29]

    C. Q. Yang, Z. W. Yin, W. Li, W. J. Cui, X. G. Zhou, L. D. Wang, R. Zhi, Y. Y. Xu, Z. W. Tao, X. Sang, Y. B. Cheng, G. Van Tendeloo, Z. Y. Hu, B. L. Su, Adv. Funct. Mater. 2024, 34

  30. [30]

    D. Wang, Y. Li, Y. Yang, Y. Guo, H. Wei, F. Liu, C. Ding, Y. Wei, D. Liu, H. Li, G. Shi, S. Chen, H. Li, A. Fuchimoto, J. Xia, S. Hayase, Q. Shen, ACS Nano 2024 18,19528−19537

  31. [31]

    D. Y. Son, J. W. Lee, Y. J. Choi, I. H. Jang, S. Lee, P. J. Yoo, H. Shin, N. Ahn, M. Choi, D. Kim, N. G. Park, Nat. Energy 2016, 1

  32. [32]

    H. T. Pham, T. Duong, K. J. Weber, J. Wong-Leung, ACS Mater. Lett. 2020, 2, 415

  33. [33]

    L. Wang, J. Liu, Y. Li, G. Wei, Q. Li, Z. Fan, H. Liu, Y. An, C. Liu, J. Li, Y. Fu, Q. Liu, D. He, Adv. Energ. Sust. Res. 2024, 5

  34. [34]

    L. Li, Z. Gan, M. R. McCartney, H. Liang, H. Yu, Y. Gao, J. Wang, D. J. Smith, Sci. Rep. 2013, 3

  35. [35]

    S. Yan, J. B. Patel, J. E. Lee, K. A. Elmestekawy, S. R. Ratnasingham, Q. Yuan, L. M. Herz, N. K. Noel, M. B. Johnston, ACS Energy Lett. 2023, 8, 4008

  36. [36]

    Randle, G

    V. Randle, G. L. F. Powell, J. Mater. Sci. Lett. 1993, 12, 779-78i

  37. [37]

    Wittwer, M

    M. Wittwer, M. Seita, NPJ Comput. Mater. 2022, 8

  38. [38]

    Goulden, A

    J. Goulden, A. Bewick, P. Trimby, Microsc. Microanal. 2017, 23, 22

  39. [39]

    H. Sun, G. W. P. Adhyaksa, E. C. Garnett, Adv. Energy Mater. 2020, 10. 25

  40. [40]

    C. Q. Yang, R. Zhi, M. U. Rothmann, Y. Y. Xu, L. Q. Li, Z. Y. Hu, S. Pang, Y. B. Cheng, G. Van Tendeloo, W. Li, Adv. Mater. 2023, 35

  41. [41]

    B. H. Savitzky, S. E. Zeltmann, L. A. Hughes, H. G. Brown, S. Zhao, P. M. Pelz, T. C. Pekin, E. S. Barnard, J. Donohue, L. Rangel Dacosta, E. Kennedy, Y. Xie, M. T. Janish, M. M. Schneider, P. Herring, C. Gopal, A. Anapolsky, R. Dhall, K. C. Bustillo, P. Ercius, M. C. Scott, J. Ciston, A. M. Minor, C. Ophus, Microsc. Microanal. 2021, 27, 712

  42. [42]

    E. S. Parrott, J. B. Patel, A. A. Haghighirad, H. J. Snaith, M. B. Johnston, L. M. Herz, Nanoscale 2019, 11, 14276

  43. [43]

    Cheng, J

    J. Cheng, J. Luo, K. Yang, Comput. Mater. Sci. 2018, 155, 92

  44. [44]

    D. G. Brandon, B. Ralph, S. Ranganathant, M. S. Waldfs, Acta Metall.1964, 12, 813 - 821

  45. [45]

    D. G. Brandont, Acta Metall. 1996, 14, 1479-1484

  46. [46]

    A. S. Thind, G. Luo, J. A. Hachtel, M. V. Morrell, S. B. Cho, A. Y. Borisevich, J. C. Idrobo, Y. Xing, R. Mishra, Adv. Mater. 2019, 31

  47. [47]

    A. M. Goryaeva, P. Carrez, P. Cordier, Phys. Chem. Miner. 2015, 42, 793

  48. [48]

    K. W. P. Orr, J. Diao, M. N. Lintangpradipto, D. J. Batey, A. N. Iqbal, S. Kahmann, K. Frohna, M. Dubajic, S. J. Zelewski, A. E. Dearle, T. A. Selby, P. Li, T. A. S. Doherty, S. Hofmann, O. M. Bakr, I. K. Robinson, S. D. Stranks, Adv. Mater. 2023, 35

  49. [49]

    Turner, H

    S. Turner, H. Idrissi, A. F. Sartori, S. Korneychuck, Y. G. Lu, J. Verbeeck, M. Schreck, G. Van Tendeloo, Nanoscale 2016, 8, 2212

  50. [50]

    Fujita, A

    N. Fujita, A. T. Blumenau, R. Jones, S. Öberg, P. R. Briddon, Phys. Status Solidi A, 2007, 204, 2211

  51. [51]

    Fujita, A

    N. Fujita, A. T. Blumenau, R. Jones, S. Öberg, P. R. Briddon, Phys. Status Solidi A, 2006, pp. 3070–3075

  52. [52]

    M. J. Hÿtch, E. Snoeck, R. Kilaas, Ultramicroscopy 1998, 74, 131

  53. [53]

    W. Li, S. Ding, M. Hao, L. Wang, J. Etheridge, ACS Nano 2025, 19, 35037

  54. [54]

    J. S. Park, Z. Li, J. N. Wilson, W. J. Yin, A. Walsh, ACS Energy Lett. 2020, 5, 2231. 26

  55. [55]

    A. S. Tutantsev, E. I. Marchenko, N. N. Udalova, S. A. Fateev, E. A. Goodilin, A. B. Tarasov, Nanomaterials 2021, 11

  56. [56]

    M. U. Rothmann, K. B. Lohmann, J. Borchert, M. B. Johnston, K. P. McKenna, L. M. Herz, P. D. Nellist, Adv. Mater. Interfaces 2023, 10