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arxiv: 2604.06619 · v1 · submitted 2026-04-08 · ❄️ cond-mat.str-el · cond-mat.mtrl-sci

Investigating the intrinsic anomalous Hall effect in MnPt3 topological semimetal

Jing Meng , Hongru Wang , Kun Zheng , Yuhao Wang , Zheng Li , Bocheng Yu , Haoyu Lin , Keqi Xia
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Jingzhong Luo Zengyao Wang Xiaoyan Zhu Baiqing Lv Yaobo Huang Jie Ma Yang Xu Shijing Gong Tian Shang Qingfeng Zhan
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Pith reviewed 2026-05-10 18:37 UTC · model grok-4.3

classification ❄️ cond-mat.str-el cond-mat.mtrl-sci
keywords anomalous Hall effectMnPt3topological semimetalBerry curvaturethin filmsstrain effectintrinsic mechanismscaling analysis
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The pith

Scaling analysis shows intrinsic Berry curvature dominates the anomalous Hall effect in MnPt3 films, with the intrinsic part strengthening as thickness increases.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The authors grew epitaxial MnPt3 thin films from 20 to 70 nm thick on MgO substrates and tracked their magnetization, resistivity, and Hall response across the ferromagnetic transition. They observe that the anomalous Hall conductivity follows a scaling relation that attributes most of the signal to the intrinsic Berry-curvature contribution arising from gapped nodal lines, while extrinsic scattering terms remain small and constant with thickness. The intrinsic conductivity itself rises with film thickness, an effect the authors link to substrate-induced strain modifying the band structure. A reader would care because this demonstrates a practical knob—film thickness and resulting strain—for increasing the topological Hall response in the XPt3 family without altering chemistry.

Core claim

In MnPt3 epitaxial films the anomalous Hall effect is carried primarily by the intrinsic mechanism tied to Berry curvature from anti-crossing gapped nodal lines near the Fermi level. Standard scaling of anomalous Hall conductivity against longitudinal conductivity isolates a thickness-dependent intrinsic anomalous Hall conductivity that grows as films thicken, while the extrinsic term stays thickness-independent. The authors attribute the rise in intrinsic conductivity to strain that alters the electronic topology, positioning strain as a route to tune band topology in the XPt3 topological semimetals.

What carries the argument

Scaling analysis that separates intrinsic Berry-curvature anomalous Hall conductivity from extrinsic scattering contributions.

If this is right

  • The intrinsic anomalous Hall conductivity can be increased by growing thicker MnPt3 films.
  • Extrinsic scattering contributions remain small and do not scale with thickness.
  • Strain acts as a controllable parameter for tuning the Berry curvature and band topology in the XPt3 family.
  • MnPt3 joins CrPt3 as an experimentally realized member of the family with sizable anomalous Hall response.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Analogous thickness-dependent strain tuning may enhance the anomalous Hall response in the still-unexplored VPt3 member of the same family.
  • If strain modifies nodal-line gaps, related topological responses such as the spin Hall conductivity could also vary with film thickness.
  • Films approaching the bulk thickness limit could reveal the maximum intrinsic anomalous Hall conductivity set by the unstrained band structure.

Load-bearing premise

That thickness-dependent changes in the intrinsic anomalous Hall conductivity arise cleanly from strain rather than from other growth-related factors such as defects or interfaces.

What would settle it

Band-structure calculations or direct strain measurements on the same films that either reproduce or fail to reproduce the observed increase in intrinsic anomalous Hall conductivity with thickness.

Figures

Figures reproduced from arXiv: 2604.06619 by Baiqing Lv, Bocheng Yu, Haoyu Lin, Hongru Wang, Jie Ma, Jing Meng, Jingzhong Luo, Keqi Xia, Kun Zheng, Qingfeng Zhan, Shijing Gong, Tian Shang, Xiaoyan Zhu, Yang Xu, Yaobo Huang, Yuhao Wang, Zengyao Wang, Zheng Li.

Figure 1
Figure 1. Figure 1: (b), the c axis increases as the film thickness increases, reaching 3.913 Å for the 70-nm-thick MnPt3 film. By con￾trast, the a axis shows an opposite thickness dependence and decreases to 3.888 Å for the 70-nm-thick MnPt3 film. Such thickness-dependent a and c axes imply an enhanced struc￾tural distortion and/or tetragonality in the MnPt3 films. This is clearly reflected by the thickness-dependent biaxial… view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2 [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3 [PITH_FULL_IMAGE:figures/full_fig_p004_3.png] view at source ↗
Figure 5
Figure 5. Figure 5: FIG. 5. (a) Anomalous Hall resistivity [PITH_FULL_IMAGE:figures/full_fig_p005_5.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4 [PITH_FULL_IMAGE:figures/full_fig_p005_4.png] view at source ↗
read the original abstract

The cubic Cu$_3$Au-type $X$Pt$_3$ family ($X$ = V, Cr, and Mn) is a topological semimetal characterized by anti-crossing gapped nodal lines near the Fermi level, which give rise to significant Berry curvatures and thus to the anomalous Hall effect (AHE). Among the three members, CrPt$_3$ has been experimentally verified to exhibit a large anomalous Hall conductivity (AHC), while its counterparts MnPt$_3$ and VPt$_3$ remain largely unexplored. Here, a series of MnPt$_3$ thin films with varying thicknesses (20--70 nm) was epitaxially grown on the MgO substrates using magnetron sputtering and was systematically investigated by magnetization, electrical resistivity, and Hall resistivity measurements. MnPt$_3$ films undergo a ferromagnetic transition at a Curie temperature $T_\mathrm{C}$, which increases as the film thickness increases, reaching $\sim$ 344 K for the 70-nm-thick film. All the anomalous Hall transport properties of MnPt$_3$ films, including the resistivity, conductivity, and angle, exhibit a strong correlation with their magnetic properties. The scaling analysis suggests that the intrinsic Berry-curvature mechanism dominates the observed AHE, while the extrinsic contributions are much smaller. The intrinsic AHC increases as the film thickness increases, while the extrinsic AHC is thickness-independent. Such an enhanced intrinsic AHC in the MnPt$_3$ films is most likely attributed to the strain effect, implying that it serves as an effective method to tune the electronic band topology in the $X$Pt$_3$ topological semimetal.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 1 minor

Summary. The manuscript reports the epitaxial growth of MnPt3 thin films (20-70 nm) on MgO substrates via magnetron sputtering and their characterization via magnetization, resistivity, and Hall measurements. It finds a thickness-dependent Curie temperature up to ~344 K, strong correlation between magnetic and anomalous Hall transport properties, and uses scaling analysis to conclude that the intrinsic Berry-curvature mechanism dominates the AHE with a thickness-independent extrinsic contribution. The intrinsic anomalous Hall conductivity is reported to increase with thickness, which the authors attribute to strain tuning the nodal-line gapping and Berry curvature in this topological semimetal.

Significance. If the central claims hold, the work extends experimental studies of the XPt3 family beyond CrPt3 by providing evidence that intrinsic AHC can be enhanced in MnPt3 films. The scaling analysis separating intrinsic and extrinsic terms is a methodological strength that supports the dominance of Berry-curvature contributions. However, the interpretation linking the thickness trend specifically to strain would benefit from additional validation to strengthen its impact on topological band engineering.

major comments (2)
  1. [Abstract and Discussion] The attribution of the thickness-dependent rise in intrinsic AHC to epitaxial strain (Abstract and concluding discussion) lacks direct supporting data. No XRD-derived in-plane/out-of-plane lattice constants, rocking curves, or reciprocal-space maps versus thickness are presented to quantify strain relaxation, and no DFT or tight-binding calculations are shown that map the measured strain values to changes in Berry curvature near E_F. This is load-bearing for the headline claim that strain serves as an effective tuning method.
  2. [Scaling Analysis] The scaling analysis (presented to separate intrinsic and extrinsic AHC) provides no quantitative details on fit quality, such as R² values, uncertainties on the extracted coefficients, or criteria for data exclusion in the ρ_AH vs ρ_xx or σ_AH vs σ_xx plots. Without these, it is difficult to evaluate the robustness of the conclusion that extrinsic contributions are much smaller and thickness-independent.
minor comments (1)
  1. [Abstract] The abstract states that all anomalous Hall transport properties exhibit strong correlation with magnetic properties, but does not specify the quantitative measures (e.g., correlation coefficients or specific figures) used to establish this.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their thorough review and constructive comments on our manuscript. We address each major comment below and indicate the revisions planned for the next version.

read point-by-point responses

  1. Referee: [Abstract and Discussion] The attribution of the thickness-dependent rise in intrinsic AHC to epitaxial strain (Abstract and concluding discussion) lacks direct supporting data. No XRD-derived in-plane/out-of-plane lattice constants, rocking curves, or reciprocal-space maps versus thickness are presented to quantify strain relaxation, and no DFT or tight-binding calculations are shown that map the measured strain values to changes in Berry curvature near E_F. This is load-bearing for the headline claim that strain serves as an effective tuning method.

    Authors: We agree that the manuscript does not include direct XRD data on lattice parameters versus thickness or DFT calculations mapping strain to Berry curvature changes. The strain attribution is inferred from the systematic thickness dependence of the intrinsic AHC, which correlates with the expected relaxation of epitaxial strain and the known sensitivity of nodal-line gapping in the XPt3 family. In the revised manuscript we will tone down the abstract and discussion to present strain as a plausible mechanism supported by the observed trends, rather than a definitively established one, and add a brief note highlighting the value of future structural and computational validation. This is a partial revision to address the concern while preserving the core experimental findings. revision: partial

  2. Referee: [Scaling Analysis] The scaling analysis (presented to separate intrinsic and extrinsic AHC) provides no quantitative details on fit quality, such as R² values, uncertainties on the extracted coefficients, or criteria for data exclusion in the ρ_AH vs ρ_xx or σ_AH vs σ_xx plots. Without these, it is difficult to evaluate the robustness of the conclusion that extrinsic contributions are much smaller and thickness-independent.

    Authors: We thank the referee for this suggestion. The scaling plots are shown in the manuscript, but quantitative fit statistics were omitted. In the revised version we will add the R² values for the linear fits, uncertainties on the extracted intrinsic and extrinsic coefficients, and explicit criteria for data inclusion (e.g., the temperature or resistivity range over which the scaling is applied). These details will be incorporated into the text and/or figure captions to strengthen the presentation of the analysis. revision: yes

Circularity Check

0 steps flagged

No significant circularity in derivation chain

full rationale

The paper reports experimental measurements of magnetization, resistivity, and Hall resistivity on MnPt3 films of varying thickness, then applies standard AHE scaling relations (widely used in the literature and independent of this work) to extract a thickness-dependent intrinsic AHC term and a thickness-independent extrinsic term. The claim that intrinsic AHC rises with thickness is a direct observation from the fitted scaling parameters on the measured data; the subsequent attribution to strain is explicitly labeled as an inference (most likely) without any equation that defines the intrinsic term in terms of itself or reduces the result to a self-citation. No self-definitional loops, fitted-input predictions, or load-bearing self-citations appear in the reported chain.

Axiom & Free-Parameter Ledger

1 free parameters · 2 axioms · 0 invented entities

The central claim rests on standard condensed-matter assumptions about Berry curvature generating AHE and the validity of conventional scaling laws for separating intrinsic and extrinsic contributions. No new entities are postulated. One free parameter appears in the form of the fitted scaling coefficients used to extract intrinsic AHC.

free parameters (1)
  • scaling coefficients in AHE decomposition
    Used to separate intrinsic and extrinsic AHC from measured resistivity and Hall data; values are determined by fitting the thickness series.
axioms (2)
  • domain assumption Berry curvature from gapped nodal lines produces intrinsic AHE in XPt3 semimetals
    Invoked to interpret the dominant contribution after scaling.
  • domain assumption Standard scaling relations (e.g., rho_AH vs rho_xx) cleanly isolate intrinsic vs extrinsic terms
    Central to the claim that intrinsic mechanism dominates.

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