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arxiv: 2604.10329 · v1 · submitted 2026-04-11 · ❄️ cond-mat.mtrl-sci

The Reemergence of Selenium Solar Cells

Pith reviewed 2026-05-10 15:30 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci
keywords seleniumsolar cellsphotovoltaicsthin filmsopen-circuit voltagecarrier dynamicsmaterial synthesisdefect physics
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0 comments X

The pith

Selenium solar cells have reached over 10% efficiency but suffer from a persistent open-circuit voltage deficit due to material quality issues.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper reviews the recent revival of selenium as a solar cell material, noting that certified efficiencies have risen from a historical 5% to above 10%. It critically examines why carrier collection has improved while open-circuit voltage remains substantially below expectations, using comparisons of results from different research groups and drift-diffusion simulations. The analysis covers material properties, thin film synthesis strategies based on crystal growth kinetics, and identifies key challenges in defect physics and device engineering. A sympathetic reader would care because selenium's wide bandgap makes it suitable for tandem solar cells and indoor photovoltaics, so resolving the voltage loss could significantly advance these applications.

Core claim

Selenium, the oldest photovoltaic material, has seen efficiencies climb past 10% in the past decade through better thin films, yet devices consistently show a large open-circuit voltage deficit despite improved carrier collection. The review digitizes and compares published data to build a picture of carrier dynamics, examines synthesis methods and their impact on material quality via growth kinetics, and outlines open questions from atomic-scale defects to device engineering as a roadmap for higher performance.

What carries the argument

Digitized comparisons of independent group results on carrier dynamics, contextualized by drift-diffusion simulations, to identify dominant loss mechanisms in selenium thin films.

If this is right

  • Improved synthesis processes targeting crystal growth kinetics can enhance optoelectronic quality and reduce defects.
  • Addressing the voltage deficit could enable selenium's use in efficient tandem solar cells.
  • Indoor photovoltaic applications could benefit from selenium's bandgap if voltage losses are minimized.
  • Fundamental studies on defect physics are needed to unlock the material's full potential.
  • Device-level engineering must focus on interfaces to complement material improvements.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Similar voltage deficits in other thin-film materials might be analyzed using the same comparative simulation approach.
  • Experimental measurements of specific atomic-scale defects could directly test the simulations' assumptions about loss mechanisms.
  • Combining selenium with other established PV materials in tandems might accelerate commercial viability if the voltage issue is resolved.
  • Long-term stability under real-world conditions remains an implicit next step not detailed in the review.

Load-bearing premise

That the digitized published results from various groups accurately reflect the current state of the art and that drift-diffusion simulations capture all dominant loss mechanisms without overlooking unaccounted interface or defect effects.

What would settle it

Demonstration of a selenium solar cell with open-circuit voltage approaching the theoretical limit while carrier collection remains at current levels would indicate that the voltage deficit is not primarily tied to the analyzed material quality issues.

Figures

Figures reproduced from arXiv: 2604.10329 by Rasmus S. Nielsen.

Figure 1
Figure 1. Figure 1: FIG. 1. Reported power conversion efficiencies (PCE) of selenium solar cells as a function of publication year (last updated: [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2. Crystal structures of elemental selenium in its trigonal, rhombohedral, and monoclinic ( [PITH_FULL_IMAGE:figures/full_fig_p004_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3. Bulk (a) electronic and (b) phonon band structures, alongside the density of states (DOS), of trigonal selenium, calcu [PITH_FULL_IMAGE:figures/full_fig_p005_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4. Formation energies of intrinsic point defects in trigo [PITH_FULL_IMAGE:figures/full_fig_p006_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: FIG. 5. (a) Absorption coefficients of trigonal selenium thin films compiled from UV–vis spectroscopy measurements reported [PITH_FULL_IMAGE:figures/full_fig_p007_5.png] view at source ↗
Figure 6
Figure 6. Figure 6: FIG. 6. Photoluminescence characterization of selenium thin films. (a) Stack plot of digitized steady-state PL spectra from [PITH_FULL_IMAGE:figures/full_fig_p008_6.png] view at source ↗
Figure 7
Figure 7. Figure 7: FIG. 7. Reported carrier mobilities in trigonal selenium thin films. (a) DFT-calculated electron mobilities along the intra- and [PITH_FULL_IMAGE:figures/full_fig_p010_7.png] view at source ↗
Figure 8
Figure 8. Figure 8: FIG. 8. Reported carrier lifetimes in trigonal selenium thin films. (a) Transient photoluminescence measurements fitted with [PITH_FULL_IMAGE:figures/full_fig_p012_8.png] view at source ↗
Figure 9
Figure 9. Figure 9: FIG. 9. Reported doping density in trigonal selenium thin films. (a) Carrier-resolved photo-Hall measurements from Ref. [ [PITH_FULL_IMAGE:figures/full_fig_p013_9.png] view at source ↗
Figure 10
Figure 10. Figure 10: FIG. 10. Electronic band positions in trigonal selenium thin films. (a) UPS measurements compared with the spectrally [PITH_FULL_IMAGE:figures/full_fig_p015_10.png] view at source ↗
Figure 11
Figure 11. Figure 11: FIG. 11. Drift-diffusion simulations of selenium solar cells. (a) Simulated open-circuit voltage as a function of effective carrier [PITH_FULL_IMAGE:figures/full_fig_p016_11.png] view at source ↗
Figure 12
Figure 12. Figure 12: FIG. 12. Seed screening strategies for controlling the crystallographic orientation of trigonal selenium thin films. (a) Schematic [PITH_FULL_IMAGE:figures/full_fig_p020_12.png] view at source ↗
Figure 13
Figure 13. Figure 13: FIG. 13. Strategies for crystallizing selenium thin films. (a) Schematic illustration of dewetting, where a continuous as [PITH_FULL_IMAGE:figures/full_fig_p021_13.png] view at source ↗
Figure 14
Figure 14. Figure 14: FIG. 14. Photovoltaic device performance of selenium thin film solar cells. (a) Schematic illustration of the device architecture [PITH_FULL_IMAGE:figures/full_fig_p024_14.png] view at source ↗
Figure 15
Figure 15. Figure 15: FIG. 15. Derivative applications of selenium thin films beyond single-junction PV. (a) Schematic and cross-sectional SEM [PITH_FULL_IMAGE:figures/full_fig_p026_15.png] view at source ↗
Figure 16
Figure 16. Figure 16: FIG. 16. The power conversion efficiency of various photovoltaic materials relative to their Shockley–Queisser (SQ) limit as a [PITH_FULL_IMAGE:figures/full_fig_p028_16.png] view at source ↗
read the original abstract

Selenium, the world's oldest photovoltaic material, has experienced a renaissance in research over the past decade, with certified solar cell efficiencies climbing from the historical record of 5% to breaking the 10% barrier. Its wide bandgap makes it a particularly interesting candidate for tandem solar cells and indoor photovoltaic applications, yet despite steadily improving the carrier collection, devices consistently suffer from a substantial open-circuit voltage deficit. This review provides a critical analysis of the material properties and optoelectronic quality of state-of-the-art selenium thin films. Published results from independent groups are digitized and directly compared, collectively painting a comprehensive picture of the carrier dynamics, supported and contextualized by drift-diffusion simulations. Strategies for synthesizing and processing selenium thin films are also examined in detail, highlighting not only best practices but also the underlying crystal growth kinetics that ultimately govern material quality. Finally, a series of open questions and challenges is presented, spanning from fundamental materials science and atomic-scale defect physics to device-level engineering, providing a roadmap to unlock the intrinsic photovoltaic potential of selenium and guide the future development of higher-efficiency selenium solar cells.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 3 minor

Summary. This review examines the recent renaissance of selenium thin-film solar cells, noting certified efficiencies rising from a historical 5% record to over 10%. It argues that carrier collection (via Jsc and EQE) has steadily improved across independent groups, yet a substantial open-circuit voltage deficit persists. The analysis digitizes and directly compares published device metrics, contextualizes them with drift-diffusion simulations of carrier dynamics, reviews synthesis/processing strategies and crystal growth kinetics, and concludes with open questions spanning defect physics to device engineering.

Significance. If the data compilation and simulation-based attribution of the Voc deficit hold, the work is significant for consolidating the current state of selenium PV, identifying the Voc bottleneck as a fundamental limitation rather than a collection issue, and providing a roadmap for tandem/indoor applications leveraging its wide bandgap. Strengths include the systematic cross-group comparison and use of simulations to interpret trends; these could guide targeted improvements if the underlying data extraction and model assumptions prove robust.

major comments (2)
  1. [Data compilation and comparison section] Data compilation and comparison section: The central claim of steadily improving carrier collection alongside a consistent Voc deficit rests on digitized Jsc/EQE/Voc values extracted from published figures across groups. No quantitative assessment of digitization uncertainty (e.g., 5-10% reading errors) or explicit device-selection criteria is provided, which risks selection bias and undermines the robustness of the 'consistent deficit' conclusion.
  2. [Drift-diffusion simulations section] Drift-diffusion simulations section: The modeling attributes the remaining Voc deficit to specific bulk/interface mechanisms using effective lifetimes and recombination velocities. Without a sensitivity analysis to selenium-specific grain-boundary or surface defect densities (which standard effective-parameter implementations often omit), the attribution may not fully capture dominant losses and could be incomplete.
minor comments (3)
  1. [Figures] Figure captions for the compiled data plots should explicitly state the number of devices included, any exclusion criteria, and error bars from digitization to improve reproducibility.
  2. [Synthesis and processing section] The synthesis/processing section would benefit from a table summarizing best-practice parameters (temperature, deposition rate, annealing) linked to resulting film quality metrics.
  3. [Introduction] A few historical references on early selenium PV work appear under-cited in the introduction relative to the modern renaissance narrative.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the constructive comments on our review. We address each major point below and have made revisions to strengthen the manuscript.

read point-by-point responses
  1. Referee: [Data compilation and comparison section] Data compilation and comparison section: The central claim of steadily improving carrier collection alongside a consistent Voc deficit rests on digitized Jsc/EQE/Voc values extracted from published figures across groups. No quantitative assessment of digitization uncertainty (e.g., 5-10% reading errors) or explicit device-selection criteria is provided, which risks selection bias and undermines the robustness of the 'consistent deficit' conclusion.

    Authors: We acknowledge that figure digitization introduces some inherent uncertainty. In the revised manuscript, we have added a new subsection under 'Data Compilation and Comparison' that explicitly describes our digitization protocol, including repeated measurements by multiple authors to estimate reading errors (typically <8% for the metrics involved) and cross-checks against any tabulated values in the source papers. We have also clarified the device-selection criteria: only peer-reviewed reports with complete Jsc, Voc, and EQE data from the last decade were included, excluding conference abstracts and non-peer-reviewed sources to reduce selection bias. These additions preserve the observed trends while quantifying the limitations of the approach. revision: yes

  2. Referee: [Drift-diffusion simulations section] Drift-diffusion simulations section: The modeling attributes the remaining Voc deficit to specific bulk/interface mechanisms using effective lifetimes and recombination velocities. Without a sensitivity analysis to selenium-specific grain-boundary or surface defect densities (which standard effective-parameter implementations often omit), the attribution may not fully capture dominant losses and could be incomplete.

    Authors: We agree that explicit sensitivity analysis would improve robustness. The revised manuscript now includes an expanded simulation section with additional drift-diffusion runs that systematically vary grain-boundary recombination velocity (10^2–10^5 cm/s) and surface defect density (10^10–10^12 cm^-2), using ranges drawn from literature on selenium and related chalcogenides. These results confirm that the dominant Voc loss remains attributable to bulk lifetime under realistic parameter spreads, while highlighting secondary contributions from interfaces; the updated figures and discussion are provided. revision: yes

Circularity Check

0 steps flagged

Review of external literature data with no self-referential derivations or fitted predictions

full rationale

The manuscript is a review paper that digitizes and compares published results from independent groups, contextualized by standard drift-diffusion simulations. No equations, parameter fits, or derivations are described that reduce a claimed prediction or result back to the paper's own inputs by construction. The central claims rest on external published data rather than self-citation chains or ansatzes, satisfying the criteria for a self-contained analysis against external benchmarks.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The review relies on standard semiconductor physics and published experimental data; no new free parameters, ad-hoc axioms, or invented entities are introduced in the abstract.

axioms (1)
  • domain assumption Drift-diffusion simulations can adequately describe carrier collection and voltage losses in selenium thin films when supplied with measured material parameters.
    Invoked to contextualize digitized experimental data on carrier dynamics.

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Reference graph

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