Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-05-10T14:59:00.460635Z
Paper Citation Record · LEDGER
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements
As of 10 August 2026, this Paper Citation Record lists 26 of 26 outbound references and 0 inbound Pith citation observations for arXiv:2604.11149.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-10T06:31:04.303077+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links
A source-named dated measurement, never combined with another source.
Source: cited_works
Reference resolution
26 of 26 outbound references displayed
- verified exact19
- verified fuzzy2
- unresolved0
- parse uncertain0
- malformed identifier0
- metadata mismatch5
External citation measurements
No source-named external measurement is stored.
Outbound references
Observation 75fd38e0-85e8-480c-8e22-e3ae629441d0 · outbound
This paper cites Kumar,et al., Sub-200Ω·𝜇m alloyed contacts to synthetic monolayer MoS2, in2021 IEEE International Electron Devices Meeting (IEDM)(IEEE) (2021), pp.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Kumar,et al., Sub-200Ω·𝜇m alloyed contacts to synthetic monolayer MoS2, in2021 IEEE International Electron Devices Meeting (IEDM)(IEEE) (2021), pp
Reference 1
- Resolution
- metadata mismatch
- arxiv_id, observed 2026-05-10T15:00:30.494844Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation cbc27ba6-3ed6-4054-bf82-65759c50a036 · outbound
This paper cites Two-step degradation of a-InGaZnO thin film transistors under DC bias stress.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Two-step degradation of a-InGaZnO thin film transistors under DC bias stress
Reference 2
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.514158Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation d793e01b-88b5-42b3-814e-2629165717d8 · outbound
This paper cites First demonstration of sub-12 nm Lg gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements First demonstration of sub-12 nm Lg gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices
Reference 3
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-05-18T10:26:15.402661Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 522b48a3-7603-4a59-bfaa-303d426af800 · outbound
This paper cites Kumar,et al., Sub-200Ω·𝜇m alloyed contacts to synthetic monolayer MoS2, in2021 IEEE International Electron Devices Meeting (IEDM)(IEEE) (2021), pp.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Kumar,et al., Sub-200Ω·𝜇m alloyed contacts to synthetic monolayer MoS2, in2021 IEEE International Electron Devices Meeting (IEDM)(IEEE) (2021), pp
Reference 4
- Resolution
- metadata mismatch
- arxiv_id, observed 2026-05-10T15:00:30.512287Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 9ff9c213-1ef3-4a61-b961-3fb2b4ac6fdb · outbound
This paper cites Compact Modeling of Emerging IC Devices for Technology -Design Co -development.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Compact Modeling of Emerging IC Devices for Technology -Design Co -development
Reference 5
- Resolution
- metadata mismatch
- arxiv_id, observed 2026-05-10T15:00:30.539414Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation aaec893e-cc5e-49d6-a38c-cac13dc831dd · outbound
This paper cites Silicon RibbonFET CMOS at 6nm Gate Length.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Silicon RibbonFET CMOS at 6nm Gate Length
Reference 6
- Resolution
- metadata mismatch
- arxiv_id, observed 2026-05-10T15:00:30.536382Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation b9dba246-bef5-4315-b49a-cb820bfe70c9 · outbound
This paper cites Silicon RibbonFET CMOS at 6nm Gate Length.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Silicon RibbonFET CMOS at 6nm Gate Length
Reference 7
- Resolution
- metadata mismatch
- arxiv_id, observed 2026-05-10T15:00:30.519634Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 1e0a3eb4-2989-461b-8350-6162ff87788f · outbound
This paper cites Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI
Reference 8
- Resolution
- verified exact
- arxiv_id, observed 2026-05-10T15:00:30.530088Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 37f8a26b-a6ec-441d-bf50-ebb16e7b67aa · outbound
This paper cites Comprehensive Study of Low-Frequency Noise Origins in Scaled Atomic-Layer-Deposited IGZO TFTs.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Comprehensive Study of Low-Frequency Noise Origins in Scaled Atomic-Layer-Deposited IGZO TFTs
Reference 9
- Resolution
- verified exact
- arxiv_id, observed 2026-05-10T15:00:30.541982Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 5fcf43da-c345-4e46-8258-cfc3355043cc · outbound
This paper cites Low-Frequency Noise in Amorphous Indium–Gallium–Zinc- Oxide Thin-Film Transistors.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Low-Frequency Noise in Amorphous Indium–Gallium–Zinc- Oxide Thin-Film Transistors
Reference 10
- Resolution
- verified exact
- arxiv_id, observed 2026-05-10T15:00:30.522273Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 580bfdc6-8cf4-4a71-878f-d1ff98faf9ed · outbound
This paper cites Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs
Reference 11
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.524072Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 9427ee82-cb2d-4175-9a79-2e65914b7995 · outbound
This paper cites The Influ- ence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin- Film Transistors With Atomic-Layer Deposition of Al2O3.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements The Influ- ence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin- Film Transistors With Atomic-Layer Deposition of Al2O3
Reference 12
- Resolution
- verified exact
- arxiv_id, observed 2026-05-10T15:00:30.517000Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 1d0d12bb-26c9-4653-b4eb-badfdd5c9a14 · outbound
This paper cites Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors
Reference 13
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.543623Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation dc7048a4-1d22-4e90-b9c3-45c4d30024f6 · outbound
This paper cites Low frequency noise in MOS transistors—I Theory.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Low frequency noise in MOS transistors—I Theory
Reference 14
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.531789Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 860bae90-d753-426c-b09b-95ebd955ce15 · outbound
This paper cites On the theory of carrier number fluctuations in MOS devices.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements On the theory of carrier number fluctuations in MOS devices
Reference 15
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.533651Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation e0e52d0e-d02f-4ee6-83c3-7c7fb2ac8690 · outbound
This paper cites 1/ƒ noise is no surface effect.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements 1/ƒ noise is no surface effect
Reference 16
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.527479Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation d4443f73-fb6d-408a-8403-60626fc1a2f1 · outbound
This paper cites 1/f noise in MOS devices, mo- bility or number fluctuations?.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements 1/f noise in MOS devices, mo- bility or number fluctuations?
Reference 17
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.525880Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation c6f78afd-6129-4759-bcb5-f9d2fc6c0d84 · outbound
This paper cites What Do We Certainly Know About 1/fNoise in MOSTs?.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements What Do We Certainly Know About 1/fNoise in MOSTs?
Reference 18
- Resolution
- verified exact
- arxiv_id, observed 2026-05-10T15:00:30.503260Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 09013c9e-8207-4809-9abc-53b5501cae9c · outbound
This paper cites 1/fNoise and Defects in Microelectronic Materials and Devices.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements 1/fNoise and Defects in Microelectronic Materials and Devices
Reference 19
- Resolution
- verified exact
- arxiv_id, observed 2026-05-10T15:00:30.491697Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 53547f03-4afa-4ee5-bfd1-3b5057ded2ef · outbound
This paper cites Coulomb effect on doping in amorphous semiconductors.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Coulomb effect on doping in amorphous semiconductors
Reference 20
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.508864Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 2bd8a26f-1bce-42aa-97e2-e0bba5eaa7ae · outbound
This paper cites Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region
Reference 21
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.500491Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 6feed2b0-defe-4e88-b137-3c896ad95953 · outbound
This paper cites Finite Element Framework for electrostatics and optical simulations in IGZO TFTs - Part 1: Modeling.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Finite Element Framework for electrostatics and optical simulations in IGZO TFTs - Part 1: Modeling
Reference 22
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-05-18T10:26:15.404972Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation f566d35e-602a-478e-b0bc-d4d6f1db6479 · outbound
This paper cites Real- and reciprocal-space attributes of band tail states.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Real- and reciprocal-space attributes of band tail states
Reference 23
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.506874Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 91c7fb0a-49b0-4d02-ac47-302b577a522c · outbound
This paper cites Conduction in non-crystalline systems V . Conductivity, optical absorption and photoconductivity in amor- phous semiconductors.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Conduction in non-crystalline systems V . Conductivity, optical absorption and photoconductivity in amor- phous semiconductors
Reference 24
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.498692Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation e67ed5dc-8281-4b13-ae77-02cfd5140c44 · outbound
This paper cites Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
Reference 25
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.505119Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation c3b946cc-a123-459e-b9a2-6c1907835b8c · outbound
This paper cites Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors.
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors
Reference 26
- Resolution
- verified exact
- doi, observed 2026-05-10T15:00:30.496685Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Pith citing papers
No inbound Pith citation observations are available.