Negative magnetoresistance in strained α-Sn and α-SnGe films in an in-plane magnetic field
Pith reviewed 2026-05-07 12:22 UTC · model grok-4.3
The pith
Negative magnetoresistance occurs in strained alpha-Sn and alpha-SnGe films for both Dirac semimetal and 3D topological insulator states with differing B-field dependence, inconsistent with the chiral anomaly.
A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.
Core claim
Our results are inconsistent with the chiral anomaly and suggest that other mechanisms may be responsible for negative MR in the Dirac/Weyl semimetal phase of α-Sn.
Load-bearing premise
That the observed negative MR arises from intrinsic properties of the identified Dirac semimetal and topological insulator states rather than from sample imperfections, strain inhomogeneity, or measurement artifacts, as the authors themselves flag in their discussion of sample design and material quality.
read the original abstract
To test the hypothesis that the chiral anomaly is responsible for negative magnetoresitance (MR) in \atn{}, we have studied magnetotransport in strained, epitaxial films of pure \aSn{} and the alloy \aSnGe{} that are in the Dirac semimetal and 3D topological insulator state, respectively. We have observed for both states a negative MR with current either parallel or transverse to the in-plane magnetic field, but with a different dependence of MR on $\vec{B}$ strength. Our results are inconsistent with the chiral anomaly and suggest that other mechanisms may be responsible for negative MR in the Dirac/Weyl semimetal phase of \aSn{}. We also discuss several factors in sample design and material quality that may be contributing to the incongruous observations of MR reported in studies of strained \atn{} films.
Editorial analysis
A structured set of objections, weighed in public.
Axiom & Free-Parameter Ledger
axioms (1)
- domain assumption Standard assumptions of uniform current flow and negligible contact resistance in magnetotransport measurements.
discussion (0)
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