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arxiv: 2605.04871 · v1 · submitted 2026-05-06 · ❄️ cond-mat.mtrl-sci · physics.app-ph

A Two-Step Chemical Vapor Deposition Process for the Synthesis of an Ir(111)/Borophene/2D-Hexagonal Boron Nitride Heterostructure by Intrinsic Segregation

Marko A. Kriegel , Karim M. Omambac , Smruti R. Mohanty , Tobias Hartl , Stefan Schulte , Niels Ganser , Pascal Dreher , Alexandra R\"odl
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Steffen Franzka Germ\'an Sciaini Thomas Michely Frank-J. Meyer zu Heringdorf Michael Horn-von Hoegen
This is my paper

Pith reviewed 2026-05-08 17:03 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci physics.app-ph
keywords borophenehexagonal boron nitridechemical vapor depositionheterostructuresegregationiridium2D materialsborazine
0
0 comments X p. Extension

The pith

A two-step CVD process uses boron solubility in iridium to grow a uniform borophene monolayer under a closed hBN layer across the entire substrate.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper describes a synthesis route that first dissolves boron into the near-surface region of an iridium crystal at high temperature and low precursor pressure. A second step at higher pressure grows a complete monolayer of hexagonal boron nitride on top. During cooling the reduced solubility forces the dissolved boron to segregate at the interface, forming a borophene sheet sandwiched between the iridium and the hBN. The resulting stack covers the substrate with micron-sized grains and requires no separate transfer steps.

Core claim

Using borazine as a single-source precursor in ultrahigh vacuum, the two-step process first establishes a boron reservoir in the iridium near-surface region at high temperature and low pressure; subsequent growth at higher pressure forms a closed hBN monolayer; cooldown then drives boron segregation to produce a borophene monolayer directly beneath the hBN, yielding a heterostructure that homogeneously covers the entire Ir(111) substrate with micron-sized grains.

What carries the argument

Intrinsic segregation of a pre-loaded boron reservoir from the iridium substrate during cooldown, after the hBN overlayer has already formed.

If this is right

  • The heterostructure forms without ex-situ transfer steps and covers the full substrate area.
  • Micron-sized grains indicate that grain boundaries can be minimized by controlling the segregation step.
  • The same solubility-driven approach could be adapted to other metal substrates that dissolve boron or nitrogen.
  • Single-source precursor use simplifies the growth compared with separate boron and nitrogen feeds.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The method may extend to other 2D materials whose constituents have temperature-dependent solubility in the chosen metal.
  • Controlling cooldown rate could tune the borophene domain size or defect density.
  • Similar reservoir-and-segregation sequences might produce multilayer stacks by repeating the high-temperature loading step.

Load-bearing premise

That the stored boron will always segregate specifically as a uniform borophene monolayer right beneath the hBN instead of forming other boron structures or remaining dissolved.

What would settle it

STM or LEED images after the full process that show either no ordered boron layer at the Ir-hBN interface or boron islands and defects instead of the expected borophene lattice.

Figures

Figures reproduced from arXiv: 2605.04871 by Alexandra R\"odl, Frank-J. Meyer zu Heringdorf, Germ\'an Sciaini, Karim M. Omambac, Marko A. Kriegel, Michael Horn-von Hoegen, Niels Ganser, Pascal Dreher, Smruti R. Mohanty, Stefan Schulte, Steffen Franzka, Thomas Michely, Tobias Hartl.

Figure 1
Figure 1. Figure 1: FIG. 1. SPA-LEED patterns in inverse logarithmic intensity scale taken at 69 eV from (a) an view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3. LEED patterns taken in LEEM for (a) a borophene refer view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4. Bright-field LEEM images acquired at 3.9 eV electron energy view at source ↗
read the original abstract

We report on a two-step ultrahigh vacuum chemical vapor deposition synthesis of a vertical Ir(111)/borophene/hexagonal boron nitride heterostructure, using borazine as a single-source precursor. The process takes advantage of the finite solubility of boron in Ir: low precursor pressure at high temperature first establishes a boron reservoir in the near-surface region of the substrate, whereas subsequent growth at higher precursor pressure promotes the formation of a closed hexagonal boron nitride monolayer. During cooldown, the reduced boron solubility drives segregation to the surface, resulting in the formation of a borophene monolayer beneath the hexagonal boron nitride overlayer. The heterostructure, with micron sized grains, homogeneously covers the entire Ir substrate. The study is performed by complementary spot profile analysis low-energy electron diffraction, low-energy electron microscopy, and scanning tunneling microscopy measurements. This intrinsic segregation-assisted growth concept provides a promising route toward scalable synthesis of high-quality, vertical heterostructures of two-dimensional materials.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The manuscript reports a two-step UHV-CVD synthesis of an Ir(111)/borophene/2D-hBN vertical heterostructure using borazine as a single-source precursor. Low-pressure/high-temperature exposure first creates a near-surface boron reservoir in the Ir substrate; higher-pressure growth then forms a closed hBN monolayer; during cooldown, reduced B solubility drives segregation to produce a borophene layer beneath the hBN. Complementary SPA-LEED, LEEM, and STM data are presented to support micron-sized grains that homogeneously cover the entire Ir(111) substrate.

Significance. If the layer sequence, monolayer character, and substrate-wide uniformity are rigorously established, the intrinsic-segregation route would constitute a useful addition to scalable 2D heterostructure synthesis, avoiding transfer steps and exploiting the known finite solubility of B in Ir. The approach could be extended to other metal–2D material combinations where solubility differences can be harnessed.

major comments (2)
  1. [§3] §3 (SPA-LEED/LEEM/STM results): the claim that the heterostructure “homogeneously covers the entire Ir substrate” with micron-sized grains rests on local diffraction and microscopy images. No integrated-intensity calibration, large-area statistical sampling, or post-growth etching/XPS quantification of total segregated boron is reported, leaving open the possibility of incomplete coverage, subsurface B, or minority phases.
  2. [§4] §4 (growth-mechanism discussion): the assertion that the boron reservoir established in step 1 segregates exclusively into a single borophene monolayer beneath the hBN cap during cooldown is not supported by direct measurement of reservoir depth, solubility change, or control experiments (e.g., cooldown without the hBN cap or variation of first-step exposure). Competing boron phases or defects cannot be excluded on the basis of the presented local probes alone.
minor comments (2)
  1. [Abstract] Abstract and §2: the phrasing “2D-Hexagonal Boron Nitride” should be standardized to the conventional “h-BN” or “hexagonal boron nitride” for consistency with the literature.
  2. [Figures] Figure captions: ensure all LEEM and STM scale bars include explicit length values and that grain-size statistics (if present) are clearly tied to the images shown.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the careful and constructive review of our manuscript. We address each major comment below and have revised the manuscript with additional discussion and clarifications where appropriate to strengthen the presentation of our results.

read point-by-point responses

  1. Referee: [§3] §3 (SPA-LEED/LEEM/STM results): the claim that the heterostructure “homogeneously covers the entire Ir substrate” with micron-sized grains rests on local diffraction and microscopy images. No integrated-intensity calibration, large-area statistical sampling, or post-growth etching/XPS quantification of total segregated boron is reported, leaving open the possibility of incomplete coverage, subsurface B, or minority phases.

    Authors: We thank the referee for this comment. SPA-LEED patterns, acquired with a beam spot of approximately 1 mm, consistently exhibit only the sharp diffraction features of the Ir(111)/borophene/hBN heterostructure with no detectable contributions from bare Ir or minority phases across multiple sample positions. This provides area-averaged evidence supporting macroscopic homogeneity. LEEM and STM data further show uniform grain morphology and coverage in fields of view up to tens of micrometers. In the revised manuscript we have added explicit discussion of the sampling strategy and the implications of the diffraction data for overall coverage. We acknowledge that post-growth XPS or etching quantification would offer complementary confirmation of total boron inventory and have noted this as a limitation for future studies. This is a partial revision consisting of added explanatory text. revision: partial

  2. Referee: [§4] §4 (growth-mechanism discussion): the assertion that the boron reservoir established in step 1 segregates exclusively into a single borophene monolayer beneath the hBN cap during cooldown is not supported by direct measurement of reservoir depth, solubility change, or control experiments (e.g., cooldown without the hBN cap or variation of first-step exposure). Competing boron phases or defects cannot be excluded on the basis of the presented local probes alone.

    Authors: The referee is correct that we do not report direct depth profiling of the boron reservoir or the suggested control experiments. The proposed mechanism relies on the well-documented temperature-dependent solubility of boron in Ir, the formation of a closed hBN monolayer in the second growth step, and the subsequent appearance of borophene upon cooling, as evidenced by STM apparent heights and LEED periodicities matching established borophene on Ir(111). In the revised discussion we have expanded the description of the solubility behavior with additional literature references and clarified that the single-monolayer character is inferred from the structural data. We explicitly state that the mechanism is proposed on the basis of the presented observations and known materials properties, and that direct reservoir measurements and control experiments lie outside the scope of the current work. This is a partial revision with clarified discussion text. revision: partial

Circularity Check

0 steps flagged

No circularity: purely experimental synthesis report with no derivations or fitted predictions

full rationale

The paper describes a two-step UHV-CVD process for growing an Ir(111)/borophene/hBN heterostructure via boron segregation during cooldown. All claims rest on direct experimental characterization (SPA-LEED, LEEM, STM) of grain size, coverage, and local structure. No equations, parameters, predictions, or derivations appear anywhere in the text. No self-citations are invoked to justify uniqueness theorems, ansatzes, or load-bearing premises. The central description of the segregation mechanism is presented as an empirical outcome of the process, not as a mathematical reduction to prior inputs. This is a standard experimental materials-science report whose validity is assessed by reproducibility of the growth and imaging results, not by internal logical closure.

Axiom & Free-Parameter Ledger

2 free parameters · 1 axioms · 0 invented entities

The central claim rests on the domain knowledge that boron exhibits finite solubility in iridium and that borazine decomposes to supply B and N atoms; no new entities are postulated and no numerical parameters are fitted to data.

free parameters (2)
  • low precursor pressure at high temperature
    Chosen experimentally to load boron into the subsurface without premature surface layer formation.
  • higher precursor pressure for hBN growth
    Selected to produce a closed monolayer before cooldown.
axioms (1)
  • domain assumption Boron possesses finite solubility in Ir(111) that decreases with temperature
    Invoked to explain reservoir formation in step one and segregation in the cooldown step.

pith-pipeline@v0.9.0 · 5551 in / 1309 out tokens · 19154 ms · 2026-05-08T17:03:14.181728+00:00 · methodology

discussion (0)

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Reference graph

Works this paper leans on

64 extracted references

  1. [1]

    Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction -- Part

    Horn-von Hoegen, Michael , year =. Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction -- Part. Zeitschrift f

  2. [2]

    Catalyst-Free Growth of Graphene by Microwave Surface Wave Plasma Chemical Vapor Deposition at Low Temperature , pages =

    Adhikari, Sudip and Aryal, Hare Ram and Uchida, Hideo and Umeno, Masayoshi , year =. Catalyst-Free Growth of Graphene by Microwave Surface Wave Plasma Chemical Vapor Deposition at Low Temperature , pages =

  3. [3]

    and in Yoon, Seong and Lim, Hyunseob and Shin, Hyun-Joon and Shin, Hyeon Suk , year =

    Ahn, Seongjoon and Kim, Gwangwoo and Nayak, Pramoda K. and in Yoon, Seong and Lim, Hyunseob and Shin, Hyun-Joon and Shin, Hyeon Suk , year =. Prevention of Transition Metal Dichalcogenide Photodegradation by Encapsulation with h-BN Layers , pages =

  4. [4]

    Recent Advances in Magnetic Two-Dimensional van der

    Algarni, Meri , year =. Recent Advances in Magnetic Two-Dimensional van der

  5. [5]

    and Miranda, Alexis and Nayak, Sasmita and Johnson, Kayleigh and Das, Priyanka and Pradhan, Nihar R

    Behura, Sanjay K. and Miranda, Alexis and Nayak, Sasmita and Johnson, Kayleigh and Das, Priyanka and Pradhan, Nihar R. , year =. Moir. Emergent Materials , file =

  6. [6]

    2007 , title =

    Berner, Simon and Corso, Martina and Widmer, Roland and Groening, Oliver and Lasko. 2007 , title =

    2007

  7. [7]

    , year =

    Bhakta, Sourav and Mazumder, Kushal and Kumar, Mukesh and Nayak, Pramoda K. , year =. Recent development in the synthesis of twisted Van der. Discover Nano , file =

  8. [8]

    and Ribeiro, R

    Britnell, L. and Ribeiro, R. M. and Eckmann, A. and Jalil, R. and Belle, B. D. and Mishchenko, A. and Kim, Y-J and Gorbachev, R. V. and Georgiou, T. and Morozov, S. V. and Grigorenko, A. N. and Geim, A. K. and Casiraghi, C. and. 2013 , title =

    2013

  9. [9]

    Castellanos-Gomez, Andres and Duan, Xiangfeng and Fei, Zhe and Gutierrez, Humberto Rodriguez and Huang, Yuan and Huang, Xinyu and Quereda, Jorge and Qian, Qi and Sutter, Eli and Sutter, Peter , year =. Van der. Nature Revie

  10. [10]

    Chen, S. and. 2019 , title =

    2019

  11. [11]

    Chen, S. and. 2020 , title =

    2020

  12. [12]

    and Busse, Carsten and Michely, Thomas , year =

    Coraux, Johann and N'Diaye, Alpha T. and Busse, Carsten and Michely, Thomas , year =. Structural coherency of graphene on

  13. [13]

    2004 , title =

    Corso, Martina and Auw. 2004 , title =

    2004

  14. [14]

    and Seufert, Knud and Chesnyak, Valeria and Waqas, Wajahat A

    Cuxart, Marc G. and Seufert, Knud and Chesnyak, Valeria and Waqas, Wajahat A. and Robert, Anton and Bocquet, Marie-laure and Duesberg, Georg S. and Sachdev, Hermann and Auw. American Association for the Advancement of Science , file =. 2021 , title =

    2021

  15. [15]

    Strategy for transferring van der

    Fan, Sidi and Li, Xianxu and Mondal, Ashok and Wang, Wenjie and Lee, Young Hee , year =. Strategy for transferring van der

  16. [16]

    and Pospischil, Andreas and Libisch, Florian and Burgd

    Furchi, Marco M. and Pospischil, Andreas and Libisch, Florian and Burgd. 2014 , title =

    2014

  17. [17]

    Geim, A. K. and Grigorieva, I. V. , year =. Van der. Nature , file =

  18. [18]

    Self-assembly of a hexagonal boron nitride nanomesh on

    Goriachko, Andrii and He, Yunbin and Knapp, Marcus and Over, Herbert and Corso, Martina and Brugger, Thomas and Berner, Simon and Osterwalder, Juerg and Greber, Thomas , year =. Self-assembly of a hexagonal boron nitride nanomesh on

  19. [19]

    and Thaler, Marco and Steiner, Dominik and Menzel, Alexander and Tosoni, Sergio and Pacchioni, Gianfranco and Bertel, Erminald , year =

    Haug, Leander and Roth, Jannik P. and Thaler, Marco and Steiner, Dominik and Menzel, Alexander and Tosoni, Sergio and Pacchioni, Gianfranco and Bertel, Erminald , year =. Precursor chemistry of

  20. [20]

    He, Feng and Zhou, Yongjian and Ye, Zefang and Cho, Sang-Hyeok and Jeong, Jihoon and Meng, Xianghai and Wang, Yaguo , year =. Moir

  21. [21]

    Periodic overlayers and moir

    Hermann, Klaus , year =. Periodic overlayers and moir

  22. [22]

    and Al-Falou, A

    Horn-von Hoegen, M. and Al-Falou, A. and Pietsch, H. and M. 1993 , title =

    1993

  23. [23]

    International Journal of Extreme Manufacturing , file =

    Huang, Zhuohui and Li, Yanran and Zhang, Yi and Chen, Jiewei and He, Jun and Jiang, Jie , year =. International Journal of Extreme Manufacturing , file =

  24. [24]

    and Chen, Xingchen and Jobst, Johannes and Krasovskii, Eugene E

    de Jong, Tobias A. and Chen, Xingchen and Jobst, Johannes and Krasovskii, Eugene E. and Tromp, Ruud M. and. 2023 , title =

    2023

  25. [25]

    and Mak, Kin Fai and Kim, Cheol-Joo and Muller, David and Park, Jiwoong , year =

    Kang, Kibum and Xie, Saien and Huang, Lujie and Han, Yimo and Huang, Pinshane Y. and Mak, Kin Fai and Kim, Cheol-Joo and Muller, David and Park, Jiwoong , year =. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity , url =. Nature , file =

  26. [26]

    and Fisher, Brandon L

    Kiraly, Brian and Liu, Xiaolong and Wang, Luqing and Zhang, Zhuhua and Mannix, Andrew J. and Fisher, Brandon L. and Yakobson, Boris I. and Hersam, Mark C. and Guisinger, Nathan P. , year =. Borophene Synthesis on

  27. [27]

    and Omambac, Karim M

    Kriegel, Marko A. and Omambac, Karim M. and Franzka, Steffen and. 2023 , title =

    2023

  28. [28]

    Constructing van der

    Li, Huihan and Xiong, Xiaolu and Hui, Fei and Yang, Dongliang and Jiang, Jinbao and Feng, Wanxiang and Han, Junfeng and Duan, Junxi and Wang, Zhongrui and Sun, Linfeng , year =. Constructing van der

  29. [29]

    and Duan, Xidong and Cheng, Hung-Chieh and Huang, Yu and Duan, Xiangfeng , year =

    Liu, Yuan and Weiss, Nathan O. and Duan, Xidong and Cheng, Hung-Chieh and Huang, Yu and Duan, Xiangfeng , year =. Van der. Nature Reviews Materials , doi =

  30. [30]

    Kinetic and mechanistic analysis of

    Lu, Xiuyuan and Zhang, Jing and Chen, Wen-Kai and Roldan, Alberto , year =. Kinetic and mechanistic analysis of

  31. [31]

    Manasevit, H. M. and Simpson, W. I. , year =. The Use of Metal-Organics in the Preparation of Semiconductor Materials , pages =

  32. [32]

    and Otero, Gonzalo and Mart

    Merino, Pablo and Svec, Martin and Pinardi, Anna L. and Otero, Gonzalo and Mart. 2011 , title =

    2011

  33. [33]

    and Petrovi

    Omambac, Karim M. and Petrovi. 2021 , title =

    2021

  34. [34]

    and Kriegel, M

    Omambac, K. and Kriegel, M. and Brand, C. and Finke, B. and Kremeyer, L. and Hattab, H. and Janoschka, D. and Dreher, P. and. 2021 , title =

    2021

  35. [35]

    and Kriegel, Marko A

    Omambac, Karim M. and Kriegel, Marko A. and Petrovi. 2023 , title =

    2023

  36. [36]

    Dry Transfer of van der

    Onodera, Momoko and Ataka, Manabu and Zhang, Yijin and Moriya, Rai and Watanabe, Kenji and Taniguchi, Takashi and Toshiyoshi, Hiroshi and Machida, Tomoki , year =. Dry Transfer of van der. ACS applied materials

  37. [37]

    2017 , title =

    Petrovi. 2017 , title =

    2017

  38. [38]

    Nanotechnology , file =

    Petrovi. Nanotechnology , file =. 2021 , title =

    2021

  39. [39]

    Ponomarenko, L. A. and Geim, A. K. and Zhukov, A. A. and Jalil, R. and Morozov, S. V. and Novoselov, K. S. and Grigorieva, I. V. and Hill, E. H. and Cheianov, V. V. and Fal'ko, V. I. and Watanabe, K. and Taniguchi, T. and Gorbachev, R. V. , year =. Tunable metal--insulator transition in double-layer graphene heterostructures , pages =

  40. [40]

    Production Methods of Van der

    Qi, Haimei and Wang, Lina and Sun, Jie and Long, Yi and Hu, Peng and Liu, Fucai and He, Xuexia , year =. Production Methods of Van der. Crystals , file =

  41. [41]

    Fabrication and applications of van der

    Qi, Junlei and Wu, Zongxiao and Wang, Wenbin and Bao, Kai and Wang, Lingzhi and Wu, Jingkun and Ke, Chengxuan and Xu, Yue and He, Qiyuan , year =. Fabrication and applications of van der. International Journal of Extreme Manufacturing , file =

  42. [42]

    ACS applied materials

    Radatovi. ACS applied materials. 2022 , title =

    2022

  43. [43]

    and Jones, Aaron M

    Rivera, Pasqual and Schaibley, John R. and Jones, Aaron M. and Ross, Jason S. and Wu, Sanfeng and Aivazian, Grant and Klement, Philip and Seyler, Kyle and Clark, Genevieve and Ghimire, Nirmal J. and Yan, Jiaqiang and Mandrus, D. G. and Yao, Wang and Xu, Xiaodong , year =. Observation of long-lived interlayer excitons in monolayer. Nature Communications , file =

  44. [44]

    Six Decades of Research on

    Schwierz, Frank and Ziegler, Martin , year =. Six Decades of Research on

  45. [45]

    and Cho, Jinill and Kanade, Vinit K

    Seok, Hyunho and Megra, Yonas Tsegaye and Kanade, Chaitanya K. and Cho, Jinill and Kanade, Vinit K. and Kim, Minjun and Lee, Inkoo and Yoo, Pil J. and Kim, Hyeong-U and Suk, Ji Won and Kim, Taesung , year =. Low-Temperature Synthesis of Wafer-Scale

  46. [46]

    Progress and prospects of Moir

    Shah, Syed Jamal and Chen, Junying and Xie, Xing and Oyang, Xinyu and Ouyang, Fangping and Liu, Zongwen and Wang, Jian-Tao and He, Jun and Liu, Yanping , year =. Progress and prospects of Moir. Nano Research , file =

  47. [47]

    Singh, Deependra Kumar and Gupta, Govind , year =. van der. Materials Advances , file =

  48. [48]

    and Voevodin, Andrey A

    Sirota, Benjamin and Glavin, Nicholas and Krylyuk, Sergiy and Davydov, Albert V. and Voevodin, Andrey A. , year =. Hexagonal. Scientific Reports , file =

  49. [49]

    Sterling, H. F. and Swann, R.C.G. , year =. Chemical vapour deposition promoted by r.f. discharge , url =

  50. [50]

    and Choi, Yong Seok and Hong, Byung Hee and Liu, Zhongfan , year =

    Sun, Luzhao and Yuan, Guowen and Gao, Libo and Yang, Jieun and Chhowalla, Manish and Gharahcheshmeh, Meysam Heydari and Gleason, Karen K. and Choi, Yong Seok and Hong, Byung Hee and Liu, Zhongfan , year =. Chemical vapour deposition , url =. Nature Revie

  51. [51]

    Large-Scale Layer-by-Layer Synthesis of Borophene on

    Sutter, Peter and Sutter, Eli , year =. Large-Scale Layer-by-Layer Synthesis of Borophene on

  52. [52]

    and Bradley, Aaron J

    Ugeda, Miguel M. and Bradley, Aaron J. and Shi, Su-Fei and. Nature Materials , file =. 2014 , title =

    2014

  53. [53]

    Ugolotti, Aldo and. npj. 2025 , title =

    2025

  54. [54]

    and Lyalin, Andrey and Taketsugu, Tetsuya and Vinogradov, Alexander S

    Vinogradov, Nikolay A. and Lyalin, Andrey and Taketsugu, Tetsuya and Vinogradov, Alexander S. and Preobrajenski, Alexei , year =. Single-Phase Borophene on

  55. [55]

    A Monolayer of Hexagonal Boron Nitride on

    Will, Moritz and Atodiresei, Nicolae and Caciuc, Vasile and Valerius, Philipp and Herbig, Charlotte and Michely, Thomas , year =. A Monolayer of Hexagonal Boron Nitride on

  56. [56]

    Withers, F. and. Nature Materials , file =. 2015 , title =

    2015

  57. [57]

    npj Quantum Materials , file =

    Wu, Rongting and Gozar, Adrian and Bo. npj Quantum Materials , file =. 2019 , title =

    2019

  58. [58]

    New Journal of Physics , file =

    Zeller, Patrick and G. New Journal of Physics , file =. 2014 , title =

    2014

  59. [59]

    2017 , title =

    Zeller, Patrick and Ma, Xinzhou and G. 2017 , title =

    2017

  60. [60]

    Review of chemical vapor deposition of graphene and related applications , pages =

    Zhang, Yi and Zhang, Luyao and Zhou, Chongwu , year =. Review of chemical vapor deposition of graphene and related applications , pages =

  61. [61]

    Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol , pages =

    Zhao, Pei and Kumamoto, Akihito and Kim, Sungjin and Chen, Xiao and Hou, Bo and Chiashi, Shohei and Einarsson, Erik and Ikuhara, Yuichi and Maruyama, Shigeo , year =. Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol , pages =

  62. [62]

    K. S. Novoselov and A. K. Geim and S. V. Morozov and D. Jiang and Y. Zhang and S. V. Dubonos and I. V. Grigorieva and A. A. Firsov , title =. Science , volume =. 2004 , abstract =

    2004

  63. [63]

    Geim, A. K. and Novoselov, K. S. , year =. The rise of graphene , url =. Nature Materials , file =

  64. [64]

    An Ammonization-Based Transformation of Hexagonal Boron Nitride on

    Pan, Jiaqi and Wei, Wei and Wang, Rui and Huang, Rong and Zhang, Chi and Cui, Yi , year =. An Ammonization-Based Transformation of Hexagonal Boron Nitride on