Paper Citation Record · LEDGER

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors

As of 10 August 2026, this Paper Citation Record lists 22 of 22 outbound references and 0 inbound Pith citation observations for arXiv:2605.28208.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2605.28208 v3

Coverage vector

measured 22 of 22 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-07-04T00:48:46.936506Z

measured 22 of 22 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-10T06:31:04.303077+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

22 of 22 outbound references displayed

verified exact3
verified fuzzy15
unresolved4
parse uncertain0
malformed identifier0
metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation c7ec470d-3e98-4eb3-8294-d05990b95db2 · outbound

This paper cites An Unsupervised Machine Learning-based Framework for Wafer Scale Variability Analysis and Performance Prediction of Ferroelectric Hf0.5Zr0.5O2 Thin Film Capacitors.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors An Unsupervised Machine Learning-based Framework for Wafer Scale Variability Analysis and Performance Prediction of Ferroelectric Hf0.5Zr0.5O2 Thin Film Capacitors

Reference 1

Resolution: verified exact; local_arxiv, observed 2026-07-04T00:49:17.298370Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation fc3132f5-c898-48d7-b628-a765a4f37b4d · outbound

This paper cites an unresolved cited work.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Unresolved cited work

Reference 2

Resolution: unresolved; raw_fallback, observed 2026-07-04T23:00:11.201944Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 6d276473-a59f-4f9f-ab6a-ce82dcd897e8 · outbound

This paper cites an unresolved cited work.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Unresolved cited work

Reference 3

Resolution: unresolved; raw_fallback, observed 2026-07-04T23:00:11.191695Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 95d5be41-c901-410d-8044-173e1174d187 · outbound

This paper cites an unresolved cited work.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Unresolved cited work

Reference 4

Resolution: unresolved; raw_fallback, observed 2026-07-04T23:00:11.195041Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 58b18bbd-f76b-45cb-b9b1-043be8964e0d · outbound

This paper cites Saha, Martin M.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Saha, Martin M

Reference 5

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.207051Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 2f26c5c5-d70d-4ed0-903d-cecc0b938865 · outbound

This paper cites Polarization switching kinetics in thin ferro- electric HZO films.Nanomaterials, 12(23):4126, 2022.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Polarization switching kinetics in thin ferro- electric HZO films.Nanomaterials, 12(23):4126, 2022

Reference 6

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.208828Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 75612dbc-6668-4d8a-8f65-80d5a3acd856 · outbound

This paper cites CrossSim: An accuracy and performance simulator for analog in-memory computing.https://github.com/sandialabs/cross-sim, 2023.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors CrossSim: An accuracy and performance simulator for analog in-memory computing.https://github.com/sandialabs/cross-sim, 2023

Reference 7

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.213742Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 3ceb80ea-e7b9-4bd3-aefd-3826d880e5b3 · outbound

This paper cites A 64-core mixed-signal in-memory compute chip based on phase-change memory for deep neural network inference.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors A 64-core mixed-signal in-memory compute chip based on phase-change memory for deep neural network inference

Reference 8

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.208448Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation ab3238a8-4177-49c2-afd3-e91056d7b203 · outbound

This paper cites Analog in-memory computing attention mechanism for fast and energy-efficient large language models.Nature Computational Science, September.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Analog in-memory computing attention mechanism for fast and energy-efficient large language models.Nature Computational Science, September

Reference 9

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.203959Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 0342b16f-683b-472f-9a7c-06d6b0d94eb8 · outbound

This paper cites Analog In-Memory Computing Attention Mechanism for Fast and Energy-Efficient Large Language Models.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Analog In-Memory Computing Attention Mechanism for Fast and Energy-Efficient Large Language Models

Reference 10

Resolution: verified exact; arxiv_id, observed 2026-07-04T00:49:17.275069Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 65f27ff3-50ce-4ae2-8823-d8694960314a · outbound

This paper cites Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware

Reference 11

Resolution: verified exact; arxiv_id, observed 2026-07-04T00:49:17.304271Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation d6d9c84f-cb50-48ad-bffb-7bd281591733 · outbound

This paper cites Merity, C.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Merity, C

Reference 12

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.205425Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 0e987782-82ac-4380-93f5-a6872c57a883 · outbound

This paper cites Müller, T.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Müller, T

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.191262Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation e0a556e1-bf90-4cb4-aa71-574ec9127505 · outbound

This paper cites ngspice: open source mixed-mode, mixed-level circuit simulator.https: //ngspice.sourceforge.io/, 2024.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors ngspice: open source mixed-mode, mixed-level circuit simulator.https: //ngspice.sourceforge.io/, 2024

Reference 14

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.184073Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 370241ac-1e7a-416d-8d35-ca0bdea56df7 · outbound

This paper cites Salahuddin and S.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Salahuddin and S

Reference 15

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.176375Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation e2d32bb5-308a-4e36-8f95-1893c234010f · outbound

This paper cites Cryogenic characterization of ferroelectric non- volatile capacitors, 2025.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Cryogenic characterization of ferroelectric non- volatile capacitors, 2025

Reference 16

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.210970Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 7f3c58b4-ad6d-47d6-b985-5015a7230605 · outbound

This paper cites Verma et al.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Verma et al

Reference 17

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.200176Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 9c46b62c-2b08-4e9f-abca-81905d389cc0 · outbound

This paper cites In-memory computing: Advances and prospects.IEEE Solid-State Circuits Magazine, 11(3):43–55, 2019.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors In-memory computing: Advances and prospects.IEEE Solid-State Circuits Magazine, 11(3):43–55, 2019

Reference 18

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.193991Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 00f72057-6d60-4d9f-a971-947d02e2e824 · outbound

This paper cites an unresolved cited work.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Unresolved cited work

Reference 19

Resolution: unresolved; raw_fallback, observed 2026-07-04T23:00:11.198588Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 34c43f14-cbbe-4361-a172-bd743de65de8 · outbound

This paper cites UniCAIM: A unified CAM/CIM architecture with static-dynamic KV cache pruning for efficient long-context LLM inference, 2025.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors UniCAIM: A unified CAM/CIM architecture with static-dynamic KV cache pruning for efficient long-context LLM inference, 2025

Reference 20

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.186477Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation ef197f61-092c-4cfe-84ad-c0a1b72e3cc1 · outbound

This paper cites Enabling lower-power charge-domain nonvolatile in-memory computing with ferroelectric FETs, 2021.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Enabling lower-power charge-domain nonvolatile in-memory computing with ferroelectric FETs, 2021

Reference 21

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.198755Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 9e793ea1-463f-49d9-bd70-046fb1447d5e · outbound

This paper cites firing-rate code.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors firing-rate code

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-07-04T23:00:11.203826Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Pith citing papers

No inbound Pith citation observations are available.