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arxiv: 2605.28235 · v1 · pith:ULBY3YKWnew · submitted 2026-05-27 · ❄️ cond-mat.mtrl-sci

Nonlinear Elasticity at the Damage Threshold of Semiconductor Nanocrystals

Pith reviewed 2026-06-29 11:28 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci
keywords nonlinear elasticityindium phosphide nanocrystalsradial breathing modesfrequency mixingHooke's law extensionphotoacoustic responseX-ray diffractionstrain-induced effects
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The pith

Indium phosphide nanocrystals display strain-induced nonlinear elasticity above 3 mJ/cm² excitation fluence, revealed by frequency mixing in breathing modes.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper examines the nonlinear photoacoustic response of indium phosphide nanocrystals on silicon nanotip arrays using time-resolved optical pump-probe spectroscopy and synchrotron X-ray diffraction. Femtosecond excitation excites radial breathing modes at 8 GHz and 10.3 GHz. Above 3 mJ/cm², nonlinear frequency mixing including sum- and difference-frequency generation appears, indicating strain-induced nonlinear elasticity. A higher-order extension of Hooke's law fits the fluence-dependent spectra and produces a physically valid elastic energy potential. Oxidation correlates with the nonlinear modes, while X-ray diffraction confirms the modes originate from the nanocrystals and supports acoustic decoupling from the substrate.

Core claim

At excitation fluences above 3 mJ/cm², nonlinear frequency mixing occurs, including sum- and difference-frequency generation, in the radial breathing modes of indium phosphide nanocrystals. This is indicative of strain-induced nonlinear elasticity. A higher-order extension of Hooke's law models the fluence-dependent spectral response and yields a physically valid elastic energy potential. Ex-situ energy-dispersive X-ray spectroscopy links oxidation to the nonlinear modes, and time-resolved X-ray diffraction verifies the nanocrystal origin along with acoustic decoupling from the substrate.

What carries the argument

Higher-order extension of Hooke's law, which models the fluence-dependent spectral response from frequency-mixed radial breathing modes and yields a physically valid elastic energy potential.

If this is right

  • Nonlinear acoustic modes emerge in correlation with nanocrystal oxidation.
  • The low-frequency modes originate from the nanocrystals, which remain acoustically decoupled from the substrate.
  • New pathways become available for material characterization and optomechanical control at the nanoscale.
  • Nonlinear phonon dynamics in nanocrystals advance toward integration in photonic and quantum devices.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Oxidation levels could be used to tune the fluence threshold for nonlinear behavior in similar nanostructures.
  • The extended Hooke's law approach may apply to other semiconductor nanocrystals under intense optical excitation.
  • Mechanical limits identified here could inform design of optoelectronic devices to avoid or exploit such nonlinear regimes.

Load-bearing premise

The frequency mixing arises specifically from strain-induced nonlinear elasticity instead of rapid heating, ablation, or substrate coupling.

What would settle it

Absence of sum- and difference-frequency generation above 3 mJ/cm² in unoxidized nanocrystals on alternative substrates would challenge both the oxidation correlation and the acoustic decoupling claim.

read the original abstract

The nonlinear photoacoustic response of indium phosphide nanocrystals on silicon nanotip arrays is investigated using time-resolved optical pump-probe spectroscopy and synchrotron-based X-ray diffraction. Femtosecond laser excitation triggers low-frequency and high-frequency radial breathing modes of the nanocrystals at 8 GHz and 10.3 GHz, respectively. At excitation fluences above 3 mJ/cm^2, nonlinear frequency mixing occurs, including sum- and difference-frequency generation, indicative of strain-induced nonlinear elasticity. A higher-order extension of Hooke's law models the fluence-dependent spectral response and yields a physically valid elastic energy potential. Ex-situ energy-dispersive X-ray spectroscopy reveals a correlation between nanocrystal oxidation and the emergence of nonlinear acoustic modes. Time-resolved X-ray diffraction confirms the nanocrystals as the origin of the low-frequency modes and supports the hypothesis of acoustic decoupling from the substrate. These findings provide insight into the mechanical limits of semiconductor nanostructures under intense optical excitation and suggest new pathways for material characterization and optomechanical control at the nanoscale. The results advance the understanding of nonlinear phonon dynamics in nanocrystals and highlight their potential for integration into next-generation photonic and quantum devices.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The manuscript investigates the nonlinear photoacoustic response of InP nanocrystals on silicon nanotip arrays via time-resolved optical pump-probe spectroscopy and synchrotron TR-XRD. It reports low- and high-frequency radial breathing modes at 8 GHz and 10.3 GHz, with nonlinear frequency mixing (sum- and difference-frequency generation) emerging above 3 mJ/cm² excitation fluence. This is attributed to strain-induced nonlinear elasticity, modeled by a higher-order extension of Hooke's law that produces a physically valid elastic energy potential. Ex-situ EDX shows correlation between nanocrystal oxidation and the nonlinear modes, while TR-XRD supports acoustic decoupling from the substrate.

Significance. If the central attribution to intrinsic strain-induced nonlinear elasticity holds after ruling out alternatives, the work would advance understanding of mechanical limits in semiconductor nanostructures near damage thresholds and open pathways for nanoscale optomechanical control and material characterization. The combination of optical and X-ray probes is a strength, but the absence of error bars, independent validation of the elastic potential, and explicit controls for competing mechanisms currently limits the result's immediate significance.

major comments (2)
  1. [Abstract] Abstract (ex-situ EDX and TR-XRD paragraphs): the reported correlation between oxidation and emergence of nonlinear acoustic modes leaves open that the observed sum- and difference-frequency generation may arise from damage products, altered acoustic impedance, or new interfaces in oxidized regions rather than bulk strain-induced higher-order elastic terms in the InP lattice. The TR-XRD support for acoustic decoupling does not address whether the oxidized fraction itself generates the mixing, which is load-bearing for the claim of intrinsic nonlinear elasticity.
  2. [Abstract] Abstract (modeling statement): the higher-order extension of Hooke's law is asserted to model the fluence-dependent spectral response and yield a physically valid elastic energy potential, yet the abstract provides neither the explicit equations, error analysis on the fit, nor validation against independent elastic data; this prevents assessment of whether the potential is independently derived or simply fitted to the same spectral observations used to claim nonlinearity.
minor comments (2)
  1. [Abstract] The fluence threshold of 3 mJ/cm² is stated without reported uncertainties or details on how it was determined from the spectral data.
  2. [Abstract] The abstract refers to 'physically valid elastic energy potential' without specifying the criteria (e.g., positive definiteness, thermodynamic stability) used to establish validity.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the constructive feedback on our manuscript. We address the two major comments point by point below. Where revisions are needed to clarify the abstract or strengthen the discussion, we indicate the planned changes.

read point-by-point responses
  1. Referee: [Abstract] Abstract (ex-situ EDX and TR-XRD paragraphs): the reported correlation between oxidation and emergence of nonlinear acoustic modes leaves open that the observed sum- and difference-frequency generation may arise from damage products, altered acoustic impedance, or new interfaces in oxidized regions rather than bulk strain-induced higher-order elastic terms in the InP lattice. The TR-XRD support for acoustic decoupling does not address whether the oxidized fraction itself generates the mixing, which is load-bearing for the claim of intrinsic nonlinear elasticity.

    Authors: The TR-XRD data establish that both the linear and nonlinear acoustic modes originate from the InP nanocrystals. The observed frequencies match the expected radial breathing modes of InP rather than oxide phases. The correlation with oxidation is interpreted as surface oxidation permitting higher internal strains before damage, thereby revealing the nonlinear regime. To make this distinction explicit, we will add a short paragraph in the revised manuscript comparing the measured frequencies against literature values for InPOx and showing that oxidized regions cannot account for the observed sum- and difference-frequency signals. revision: yes

  2. Referee: [Abstract] Abstract (modeling statement): the higher-order extension of Hooke's law is asserted to model the fluence-dependent spectral response and yield a physically valid elastic energy potential, yet the abstract provides neither the explicit equations, error analysis on the fit, nor validation against independent elastic data; this prevents assessment of whether the potential is independently derived or simply fitted to the same spectral observations used to claim nonlinearity.

    Authors: The explicit higher-order elastic energy expression, the fitting procedure, error bars on the extracted nonlinear coefficients, and the demonstration that the resulting potential remains positive definite are all contained in the main text (Section on nonlinear elasticity modeling) and supplementary information. The linear terms recover the known elastic constants of InP, providing an independent consistency check. We will revise the abstract to include a concise reference to this validation, within length limits. revision: partial

Circularity Check

0 steps flagged

No circularity: model extension presented as independent fit without reduction shown

full rationale

The abstract states that a higher-order extension of Hooke's law models the fluence-dependent spectral response and yields a physically valid elastic energy potential. No equations, fitting procedure, or derivation steps are quoted in the provided text that would allow exhibiting a reduction of the claimed prediction or potential back to the input spectral data by construction. The central claim therefore remains self-contained against external benchmarks; no load-bearing self-citation, self-definitional step, or fitted-input-called-prediction is identifiable from the given material.

Axiom & Free-Parameter Ledger

1 free parameters · 1 axioms · 0 invented entities

The central claim rests on the assumption that frequency mixing is produced by nonlinear elasticity captured by a higher-order Hooke's law whose parameters are chosen to keep the energy potential physically valid; no explicit free parameters, axioms, or invented entities are listed in the abstract, but the modeling step implies at least one fitted coefficient per mode.

free parameters (1)
  • higher-order elastic coefficients
    The extension of Hooke's law requires additional coefficients whose values are adjusted to reproduce the observed fluence-dependent frequencies and to keep the elastic energy potential physically valid.
axioms (1)
  • domain assumption The radial breathing modes remain linearly decoupled from the substrate below the nonlinear threshold.
    Time-resolved XRD is said to support acoustic decoupling; this premise is required to attribute the modes solely to the nanocrystals.

pith-pipeline@v0.9.1-grok · 5753 in / 1530 out tokens · 32216 ms · 2026-06-29T11:28:51.741748+00:00 · methodology

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Works this paper leans on

64 extracted references · 56 canonical work pages

  1. [1]

    Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

    Y an X, Li Y , Zhang X. Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices. Nanoscale Horiz.. 2025;10:56-77. doi: 10.1039/D4NH00385C

  2. [2]

    Light Sources and Photodetectors Enabled by 2D Semiconductors

    Shang J, Cong C, Wu L, Huang W, Y u T. Light Sources and Photodetectors Enabled by 2D Semiconductors. Small Methods. 2018;2(7):1800019. doi: 10.1002/smtd.201800019

  3. [3]

    Multicolor Semiconduc- tor Lasers

    Zhuang X, Ouyang Y , Wang X, Pan A. Multicolor Semiconduc- tor Lasers. Advanced Optical Materials. 2019;7(9):1900071. doi: 10.1002/adom.201900071

  4. [4]

    Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials

    Teng F, Hu K, Ouyang W, Fang X. Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials. Advanced Materials. 2018;30(26):1706262. doi: 10.1002/adma.201706262

  5. [5]

    Piezotronic effect on interfacial charge modulation in mixed-dimensional van der Waals heterostructure for ultrasensitive flexible photodetectors

    Du J, Liao Q, Hong M, et al. Piezotronic effect on interfacial charge modulation in mixed-dimensional van der Waals heterostructure for ultrasensitive flexible photodetectors. Nano Energy. 2019;58:85–93. doi: 10.1016/j.nanoen.2019.01.024

  6. [6]

    Recent Advances in Flexible Inorganic Light Emitting Diodes: From Materials Design to Integrated Optoelectronic Platforms

    Zhang H, Rogers JA. Recent Advances in Flexible Inorganic Light Emitting Diodes: From Materials Design to Integrated Optoelectronic Platforms. Advanced Optical Materials. 2019;7(3):1800936. doi: 10.1002/adom.201800936

  7. [7]

    Surface Engi- neering of ZnO Nanostructures for Semiconductor-Sensitized So- lar Cells

    Xu J, Chen Z, Zapien JA, Lee CS, Zhang W. Surface Engi- neering of ZnO Nanostructures for Semiconductor-Sensitized So- lar Cells. Advanced Materials. 2014;26(31):5337–5367. doi: 10.1002/adma.201400403

  8. [8]

    III-V Semiconductor Single Nanowire Solar Cells: A Review

    Li Z, Tan HH, Jagadish C, Fu L. III-V Semiconductor Single Nanowire Solar Cells: A Review. Advanced Materials Technologies. 2018;3(9):1800005. doi: 10.1002/admt.201800005

  9. [9]

    Progress in light-to-frequency conversion circuits based on low dimensional semiconductors

    Seo SG, Kim SY , Jeong J, Jin SH. Progress in light-to-frequency conversion circuits based on low dimensional semiconductors. Nano Research. 2021;14(9):2938–2964. doi: 10.1007/s12274-021-3586-6

  10. [10]

    The fast and the furious: Ultrafast hot electrons in plasmonic metastructures

    Besteiro L V , Y u P , Wang Z, et al. The fast and the furious: Ultrafast hot electrons in plasmonic metastructures. Size and structure matter. Nano Today. 2019;27:120–145. doi: 10.1016/j.nantod.2019.05.006

  11. [11]

    Chatterjee, P

    Chatterjee A, Stevenson P , Franceschi SD, Morello A, Leon dNP , Kuemmeth F. Semiconductor qubits in practice. Nature Reviews Physics. 2021;3:157–177. doi: 10.1038/s42254-021-00283-9

  12. [12]

    Quantum Communication Using Semiconductor Quantum Dots

    V ajner DA, Rickert L, Gao T, Kaymazlar K, Heindel T. Quantum Communication Using Semiconductor Quantum Dots. Advanced Quantum Technologies. 2022;5(5):2100116. doi: 10.1002/qute.202100116

  13. [13]

    Semiconductor Nanocrystals Emitting in the Second Near-Infrared Window: Optical Properties and Application in Biomedical Imag- ing

    Jiao M, Portniagin AS, Luo X, Jing L, Han B, Rogach AL. Semiconductor Nanocrystals Emitting in the Second Near-Infrared Window: Optical Properties and Application in Biomedical Imag- ing. Advanced Optical Materials. 2022;10(20):2200226. doi: 10.1002/adom.202200226

  14. [14]

    Photother- mal Catalysts, Light and Heat Management: From Materials Design to Performance Evaluation

    Ramos-Fernandez EV , Rendon-Patiño A, Mateo D, et al. Photother- mal Catalysts, Light and Heat Management: From Materials Design to Performance Evaluation. Advanced Energy Materials. 2025. doi: 10.1002/aenm.202405272

  15. [15]

    Next-Generation Image Sensors Based on Low-Dimensional Semiconductor Materials

    Hu Y , Gao Z, Luo Z, An L. Next-Generation Image Sensors Based on Low-Dimensional Semiconductor Materials. Advanced Materials

  16. [16]

    doi: 10.1002/adma.202501123

  17. [17]

    Polariton probing of attometre displacement and nanoscale strain in ultrashort acoustic pulses

    Karzel M, Samusev AK, Linnik TL, et al. Polariton probing of attometre displacement and nanoscale strain in ultrashort acoustic pulses. Nature Materials. 2025. Published online: May 15, 2025 doi: 10.1038/s41563-025-02229-3

  18. [18]

    Modulation of photonic structures by surface acoustic waves

    Lima dMM, Santos PV . Modulation of photonic structures by surface acoustic waves. Reports on Progress in Physics. 2005;68(7):1639–

  19. [19]

    doi: 10.1088/0034-4885/68/7/r02

  20. [20]

    Bulk and Surface Acoustic Waves: Fundamentals, Devices, and Applications

    Zhang G. Bulk and Surface Acoustic Waves: Fundamentals, Devices, and Applications. New Y ork: Jenny Stanford Publishing, 2022

  21. [21]

    Surface Acoustic Wave Devices

    Datta S. Surface Acoustic Wave Devices . Englewood Cliffs, N.J.: Prentice-Hall, 1986

  22. [22]

    Photon anti-bunching in acoustically pumped quantum dots

    Couto Jr ODD, Lazic S, Iikawa F, et al. Photon anti-bunching in acoustically pumped quantum dots. Nature Photonics. 2009;3:645 EP -. doi: 10.1038/nphoton.2009.191

  23. [23]

    Control of single pho- ton emitters in semiconductor nanowires by surface acoustic waves

    Lazi S, Hernández-Mínguez A, Santos PV . Control of single pho- ton emitters in semiconductor nanowires by surface acoustic waves. Semiconductor Science and Technology. 2017;32(8):084002. doi: 10.1088/1361-6641/aa7295

  24. [24]

    Dynamic Acoustic Control of Individual Optically Active Quantum Dot-like Emission Centers in Heterostructure Nanowires

    WeiSS M, Kinzel JB, Schülein FJR, et al. Dynamic Acoustic Control of Individual Optically Active Quantum Dot-like Emission Centers in Heterostructure Nanowires. Nano Letters. 2014;14(4):2256–2264. doi: 10.1021/nl4040434

  25. [25]

    Dynamic modulation of pho- tonic crystal nanocavities using gigahertz acoustic phonons

    Fuhrmann DA, Thon SM, Kim H, et al. Dynamic modulation of pho- tonic crystal nanocavities using gigahertz acoustic phonons. Nature Photonics. 2011;5(10):605–609. doi: 10.1038/nphoton.2011.208

  26. [26]

    Physical mechanisms of coherent acoustic phonons generation by ultrafast laser action

    Ruello P , Gusev VE. Physical mechanisms of coherent acoustic phonons generation by ultrafast laser action. Ultrasonics. 2015;56:21 - 35. doi: 10.1016/j.ultras.2014.06.004

  27. [27]

    Concepts and use cases for picosecond ul- trasonics with x-rays

    Mattern M, von Reppert A, Zeuschner SP , Herzog M, Pudell JE, Bargheer M. Concepts and use cases for picosecond ul- trasonics with x-rays. Photoacoustics. 2023;31:100503. doi: 10.1016/j.pacs.2023.100503

  28. [28]

    Brillouin scatter- ing of visible and hard X-ray photons from optically synthesized phonon wavepackets

    Bojahr A, Herzog M, Mitzscherling S, et al. Brillouin scatter- ing of visible and hard X-ray photons from optically synthesized phonon wavepackets. Opt. Express. 2013;21(18):21188–21197. doi: 10.1364/OE.21.021188

  29. [29]

    Detecting optically syn- thesized quasi-monochromatic sub-terahertz phonon wavepackets by ultrafast x-ray diffraction

    Herzog M, Bojahr A, Goldshteyn J, et al. Detecting optically syn- thesized quasi-monochromatic sub-terahertz phonon wavepackets by ultrafast x-ray diffraction. Appl. Phys. Lett.. 2012;100(9):094101. doi: 10.1063/1.3688492

  30. [31]

    Ultrafast Spectroscopy of Semiconductors and Semiconduc- tor Nanostructures

    Shah J. Ultrafast Spectroscopy of Semiconductors and Semiconduc- tor Nanostructures . 115 of Springer Series in Solid-State Sciences . Springer, 1999

  31. [32]

    Surface generation and detection of phonons by picosecond light pulses

    Thomsen C, Grahn HT, Maris HJ, Tauc J. Surface generation and detection of phonons by picosecond light pulses. Phys. Rev. B. 1986;34:4129–4138. doi: 10.1103/PhysRevB.34.4129

  32. [33]

    Observing backfolded and un- folded acoustic phonons by broadband optical light scattering

    Maerten L, Bojahr A, Bargheer M. Observing backfolded and un- folded acoustic phonons by broadband optical light scattering. Ultra- sonics. 2015;56:148–152. doi: 10.1016/j.ultras.2014.08.023 12 Hensel ET AL

  33. [34]

    On the vibrations of an elastic sphere

    Lamb H. On the vibrations of an elastic sphere. Proceedings of the London Mathematical Society. 1881;s1-13:189-212. doi: 10.1112/plms/s1-13.1.189

  34. [35]

    Elastic anharmonicity of InP: Its rela- tionship to the high pressure transition

    Nichols D, Rimai D, Sladek R. Elastic anharmonicity of InP: Its rela- tionship to the high pressure transition. Solid State Communications. 1980;36(8):667-669. doi: 10.1016/0038-1098(80)90205-7

  35. [36]

    Chopper system for time resolved experiments with synchrotron radiation

    Cammarata M, Eybert L, Ewald F, et al. Chopper system for time resolved experiments with synchrotron radiation. Review of Scientific Instruments. 2009;80(1):015101. doi: 10.1063/1.3036983

  36. [37]

    Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure

    Niu G, Capellini G, Hatami F, et al. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure. ACS Applied Materials and Interfaces. 2016;8:26948-26955. doi: 10.1021/ac- sami.6b09592

  37. [38]

    Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrys- tals on Si Nanotips for III-V -on-Si Electronics and Optoelectron- ics

    Niu G, Leake SJ, Skibitzki O, et al. Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrys- tals on Si Nanotips for III-V -on-Si Electronics and Optoelectron- ics. Physical Review Applied. 2019;11. doi: 10.1103/PhysRevAp- plied.11.064046

  38. [39]

    Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

    Kafi N, Kang S, Golz C, et al. Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy. Crystal Growth and Design. 2024;24:2724-2733. doi: 10.1021/acs.cgd.3c01337

  39. [40]

    Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS- MBE

    Rodrigues A, Kamath A, Illner HS, et al. Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS- MBE. Nanomaterials. 2025;15. doi: 10.3390/nano15141083

  40. [41]

    Demonstration of a picosecond Bragg switch for hard X-rays in a synchrotron- based pump–probe experiment

    Sander M, Bauer R, Kabanova V , et al. Demonstration of a picosecond Bragg switch for hard X-rays in a synchrotron- based pump–probe experiment. Journal of Synchrotron Radiation. 2019;26(4):1253–1259. doi: 10.1107/S1600577519005356

  41. [42]

    Transition regime in the ultrafast laser heating of solids

    Shayduk R, Gaal P . Transition regime in the ultrafast laser heating of solids. Journal of Applied Physics. 2020;127. doi: 10.1063/1.5143717

  42. [43]

    Thermal oxidation of InP .Journal of Applied Physics

    Wager JF, Wilmsen CW. Thermal oxidation of InP .Journal of Applied Physics. 1980;51:812-814. doi: 10.1063/1.327302

  43. [44]

    Nonlinear Optics

    Boyd RW. Nonlinear Optics. Academic Press. 4 ed., 2020

  44. [45]

    Second Harmonic Generation of Nanoscale Phonon Wave Packets

    Bojahr A, Gohlke M, Leitenberger W, et al. Second Harmonic Generation of Nanoscale Phonon Wave Packets. Phys. Rev. Lett.. 2015;115:195502. doi: 10.1103/physrevlett.115.195502

  45. [46]

    Festkörperphysik

    Gross R, Marx A. Festkörperphysik. De Gruyter Studium. 3 ed., 2018

  46. [47]

    Structural and optical character- ization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE

    Skibitzki O, Prieto I, Kozak R, et al. Structural and optical character- ization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE. Nanotechnology. 2017;28. doi: 10.1088/1361-6528/aa5ec1

  47. [48]

    Characterization of an ultrafast Bragg-Switch for shortening hard x-ray pulses

    Sander M, Koc A, Kwamen CT, et al. Characterization of an ultrafast Bragg-Switch for shortening hard x-ray pulses. Journal of Applied Physics. 2016;120(19):193101. doi: 10.1063/1.4967835

  48. [49]

    Analysis of ultrafast X-ray diffraction data in a linear-chain model of the lattice dynamics

    Herzog M, Schick D, Gaal P , Shayduk R, Korff Schmising vC, Bargheer M. Analysis of ultrafast X-ray diffraction data in a linear-chain model of the lattice dynamics. Applied Physics A. 2012;106(3):489-499. doi: 10.1007/s00339-011-6719-z

  49. [50]

    udkm1Dsim - a Python toolbox for simulating 1D ultrafast dynamics in condensed matter

    Schick D. udkm1Dsim - a Python toolbox for simulating 1D ultrafast dynamics in condensed matter. Computer Physics Communications. 2021;266:108031. doi: 10.1016/j.cpc.2021.108031

  50. [51]

    Low Temperature Ther- mal Expansion of InP .physica status solidi (a)

    Deus P , Schneider HA, V oland U, Stiehler K. Low Temperature Ther- mal Expansion of InP .physica status solidi (a). 1987;103(2):443-447. doi: 10.1002/pssa.2211030214

  51. [52]

    Zeitschrift für Kristallographie

    Crystal structures of the low-temperature quartz-type phases of SiO2 and GeO2 at elevated pressure. Zeitschrift für Kristallographie. 1992;198(3-4):177–212. doi: 10.1524/zkri.1992.198.3-4.177

  52. [53]

    The 1986 adjustment of the fundamen- tal physical constants

    Cohen ER, Taylor BN. The 1986 adjustment of the fundamen- tal physical constants. Rev. Mod. Phys.. 1987;59:1121–1148. doi: 10.1103/RevModPhys.59.1121

  53. [54]

    Measurement of Elastic Constants at Low Tempera- tures by Means of Ultrasonic Waves-Data for Silicon and Germanium Single Crystals, and for Fused Silica

    McSkimin HJ. Measurement of Elastic Constants at Low Tempera- tures by Means of Ultrasonic Waves-Data for Silicon and Germanium Single Crystals, and for Fused Silica. Journal of Applied Physics. 1953;24(8):988-997. doi: 10.1063/1.1721449

  54. [55]

    Elastic Moduli of Silicon vs Hydro- static Pressure at 25.0 ◦C and -195.8 ◦C

    McSkimin HJ, Andreatch J. Elastic Moduli of Silicon vs Hydro- static Pressure at 25.0 ◦C and -195.8 ◦C. Journal of Applied Physics. 1964;35(7):2161-2165. doi: 10.1063/1.1702809

  55. [56]

    Dielectric functions and optical parameters of Si, Ge, GaP , GaAs, GaSb, InP , InAs, and InSb from 1.5 to 6.0 eV

    Aspnes DE, Studna AA. Dielectric functions and optical parameters of Si, Ge, GaP , GaAs, GaSb, InP , InAs, and InSb from 1.5 to 6.0 eV . Phys. Rev. B. 1983;27:985–1009. doi: 10.1103/PhysRevB.27.985

  56. [57]

    Arosa Y , Fuente d. lR. Refractive index spectroscopy and material dispersion in fused silica glass. Opt. Lett.. 2020;45(15):4268–4271. doi: 10.1364/OL.395510

  57. [58]

    Miao, Physical Review A95, 10.1103/phys- reva.95.012103 (2017)

    Kudman I, Steigmeier EF. Thermal Conductivity and Seebeck Coeffi- cient of InP .Phys. Rev.. 1964;133:A1665–A1667. doi: 10.1103/Phys- Rev.133.A1665

  58. [59]

    Thermal conductivity of sputtered and evap- orated SiO 2 and TiO 2 optical coatings

    Cahill DG, Allen TH. Thermal conductivity of sputtered and evap- orated SiO 2 and TiO 2 optical coatings. Applied Physics Letters. 1994;65(3):309-311. doi: 10.1063/1.112355

  59. [60]

    Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point

    Glassbrenner CJ, Slack GA. Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point. Phys. Rev.. 1964;134:A1058–A1069. doi: 10.1103/PhysRev.134.A1058

  60. [61]

    Fundamentals of Semiconductor Processing Technology

    El-Kareh B. Fundamentals of Semiconductor Processing Technology. Springer New Y ork, 1994

  61. [62]

    Linear thermal ex- pansion measurements on silicon from 6 to 340 K

    Lyon KG, Salinger GL, Swenson CA, White GK. Linear thermal ex- pansion measurements on silicon from 6 to 340 K. Journal of Applied Physics. 1977;48(3):865-868. doi: 10.1063/1.323747

  62. [63]

    Die durchschnittlichen Atomwärmen der A III BV - Halbleiter AlSb, GaAs, GaSb, InP , InAs, lnSb und die Atomwärme des Elements Germanium zwischen 12 und 273 ◦K

    Piesbergen U. Die durchschnittlichen Atomwärmen der A III BV - Halbleiter AlSb, GaAs, GaSb, InP , InAs, lnSb und die Atomwärme des Elements Germanium zwischen 12 und 273 ◦K. Zeitschrift für Naturforschung A. 1963;18(2):141–147. doi: doi:10.1515/zna-1963- 0206

  63. [64]

    Electron-phonon interaction and thermal boundary resistance at the interfaces of Ge2Sb2Te5 with metals and dielectrics,

    Andersson S, Dzhavadov L. Thermal conductivity and heat capac- ity of amorphous SiO 2: pressure and volume dependence. Journal of Physics: Condensed Matter . 1992;4(29):6209. doi: 10.1088/0953- 8984/4/29/005

  64. [65]

    The heat capacity of pure silicon and germanium and properties of their vibrational fre- quency spectra

    Flubacher P , Leadbetter AJ, Morrison JA. The heat capacity of pure silicon and germanium and properties of their vibrational fre- quency spectra. The Philosophical Magazine: A Journal of Theoret- ical Experimental and Applied Physics. 1959;4(39):273–294. doi: 10.1080/14786435908233340 SUPPORTING INFORMATION Data is made available upon request. Nonlinear ...