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arxiv: 2606.21299 · v1 · pith:5OX4R3MSnew · submitted 2026-06-19 · ⚛️ physics.ins-det · nucl-ex

Characterization of GaN:Si and ZnO:Ga for position-resolved fast timing applications

Julius Meyer , Joshua W. Cates , Woon-Seng Choong , Juan Cristhian Luque Gutierrez , Federico Moretti , Ryan Pavlovsky , Mauricio Ayllon Unzueta , Weronika W. Wolszczak
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Markus Roth Arun Persaud
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Pith reviewed 2026-06-26 12:50 UTC · model grok-4.3

classification ⚛️ physics.ins-det nucl-ex
keywords GaN:SiZnO:Gascintillatorstiming resolutionalpha detectionassociated particle imagingYAP:Ce
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The pith

GaN:Si and ZnO:Ga scintillators achieve detector timing resolutions of 35 ps and 49 ps, more than three times better than YAP:Ce.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

This paper characterizes single-crystal silicon-doped gallium nitride (GaN:Si) and gallium-doped zinc oxide (ZnO:Ga) as scintillators for fast timing in alpha particle detection. It reports room-temperature scintillation properties including fast rise times under 15 ps and single-component decay times of 32 ps for GaN:Si and 805 ps for ZnO:Ga. Using coincidence measurements with a plastic scintillator reference, the materials show detector timing resolutions of 35(9) ps and 49(5) ps, compared to 144(2) ps for YAP:Ce. The work proposes them as replacements in associated particle imaging systems and provides position resolution data of about 1 mm for GaN:Si and 0.3 mm for ZnO:Ga from simulations.

Core claim

GaN:Si and ZnO:Ga exhibit (35(9))ps and (49(5))ps DTR, respectively, compared to (144(2))ps for conventional, single-crystal YAP:Ce, with >3x improvement in timing resolution, while maintaining good position resolution and alpha peak visibility.

What carries the argument

Coincidence timing resolution (CTR) and detector timing resolution (DTR) measurements using a plastic scintillator reference setup to compare the materials under identical conditions.

If this is right

  • These materials can serve as high-performance replacements for YAP:Ce in API systems requiring high timing, position, and energy resolution.
  • Both show fast rise times of less than 15 ps and brightness over 1000 ph/MeV with resolved alpha peaks.
  • GaN:Si has a very fast 32 ps decay, while ZnO:Ga has 805 ps, both single-component.
  • Position resolution is better than 0.2 mm for YAP:Ce, approximately 1 mm for GaN:Si, and 0.3 mm simulated for ZnO:Ga.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • If the timing improvement holds in other setups, it could enable better 3D mapping in medical or security applications.
  • The position resolution difference suggests trade-offs between materials for different use cases.
  • The red-shifted near-bandgap emission spectra suggest potential for reduced self-absorption compared to polycrystalline forms.

Load-bearing premise

The experimental setup using a plastic scintillator reference provides a valid and unbiased baseline for comparing intrinsic detector timing resolution across the three materials under identical conditions.

What would settle it

Repeating the DTR measurements in a setup without the plastic reference or with a different reference detector that yields DTR values for GaN:Si and ZnO:Ga not significantly better than YAP:Ce.

Figures

Figures reproduced from arXiv: 2606.21299 by Arun Persaud, Federico Moretti, Joshua W. Cates, Juan Cristhian Luque Gutierrez, Julius Meyer, Markus Roth, Mauricio Ayllon Unzueta, Ryan Pavlovsky, Weronika W. Wolszczak, Woon-Seng Choong.

Figure 1
Figure 1. Figure 1: GaN:Si, ZnO:Ga, and YAP:Ce samples used in this work. combined with oxygen or carbon impurities, which act as deep acceptors. J. Meyer et al.: Preprint submitted to Elsevier Page 3 of 14 [PITH_FULL_IMAGE:figures/full_fig_p003_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: TCSPC setup used to measure scintillation rise and decay times. A pulsed Ti:Sapphire laser in 2nd harmonic mode drives a photo-excited X-ray tube, and scintillation photons are detected by an MCP-PMT. and position resolution are measured under direct alpha particle irradiation, making the results specific to alpha detection applications such as API. The timing framework and CRLB analysis, however, are gene… view at source ↗
Figure 3
Figure 3. Figure 3: Schematic drawing of the aluminized GaN:Si scin￾tillation layer on a Sapphire wafer, coupled to a R9800-100 Hamamatsu PMT to measure the light yield [PITH_FULL_IMAGE:figures/full_fig_p005_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: Experimental setup to measure the single-photon response. 3.2. Light Yield Measurement Setup To measure the absolute light yield of the GaN:Si, ZnO:Ga, and YAP:Ce samples in the setup shown in Fig￾ure 3, the single-photon response of the Hamamatsu R9800- 100 PMT with the DRS4 evaluation board data acquisition system was first quantified. 3.2.1. Single-Photon Response Setup The experimental setup to measure… view at source ↗
Figure 7
Figure 7. Figure 7: Experimental setup to measure the position resolu￾tion capabilities of all three scintillator samples in an emulated API system. (a) Coarse mask. (b) Fine mask [PITH_FULL_IMAGE:figures/full_fig_p006_7.png] view at source ↗
Figure 8
Figure 8. Figure 8: Coarse and fine masks used in the position resolution measurements. guide structure is optically coupled to two Hamamatsu R9800-100 PMTs, one on each side, so that a single alpha event is detected in both PMTs. According to SRIM/TRIM simulations [22], alpha particles deposit about 2.9 MeV in the EJ-214 film and lose a total of about 700 keV while traversing the 4 mm of air gaps between the source, the EJ￾2… view at source ↗
Figure 6
Figure 6. Figure 6: Experimental setup for CTR measurements. used for YAP:Ce and ZnO:Ga. Three Hamamatsu R9800- 100 super bialkali-PMTs were used to detect photons from the reference plastic scintillator and each sample scintillator. The TTS of 115 ps (270 ps FWHM) was taken from the Hamamatsu datasheet. A DRS4 evaluation board served as the data-acquisition system, offering 700 MHz of analog bandwidth and a sampling rate of … view at source ↗
Figure 9
Figure 9. Figure 9: Measured TCSPC temporal distributions of the scintillation decay under pulsed X-ray excitation for (a) GaN:Si, (b) ZnO:Ga, and (c) YAP:Ce samples used in this work. 4. Results and Discussion 4.1. Rise and Decay Time Results Figs. 9a, 9b, and 9c show the measured TCSPC his￾tograms for GaN:Si, ZnO:Ga, and YAP:Ce. The insets show [PITH_FULL_IMAGE:figures/full_fig_p007_9.png] view at source ↗
Figure 10
Figure 10. Figure 10: Integrated signal from the Hamamatsu R9800-100 PMT when exposed to blue LED light at 465 nm at 1.15 V. with zero detected photoelectrons, forming a pedestal peak centered around zero integrated signal, which corresponds to the electronic noise floor. The full distribution was modeled as a sum of Gaussian contributions corresponding to 0, 1, 2, and higher photoelectron events. The separation between adjace… view at source ↗
Figure 11
Figure 11. Figure 11: Experimentally detected and calculated absolute light yields for GaN:Si, ZnO:Ga, and YAP:Ce compared with literature values. the absolute light yields for alpha particles shown in Fig￾ure 11b: LYMeV = 𝑃 qe ⋅ 𝑇 ⋅ 𝐸 , ΔLYMeV = LYMeV √√√√ ∑ 𝑥∈{𝑃 ,qe,𝑇 ,𝐸} (Δ𝑥 𝑥 )2 . (10) Here, 𝑃 is the number of photoelectrons detected by the PMT, qe is the quantum efficiency of the PMT, 𝑇 is the photon-transport efficiency … view at source ↗
Figure 12
Figure 12. Figure 12: While ZnO:Ga exhibits a single strong emission around 401 nm, GaN:Si shows the direct bandgap emission at 372 nm and, in addition, the greenish yellow luminescence peaking around 567 nm, as also reported by Yanagida et al. [8] and Tominaga et al. [24]. The contribution from the fast-bandgap emission is significantly higher than in the unintentionally doped GaN sample reported in Yanagida et al. [8]. The c… view at source ↗
Figure 14
Figure 14. Figure 14: CTR contribution comparison for GaN:Si, ZnO:Ga, and YAP:Ce. Also shown is the calculated CRLB for the Hamamatsu R9800-100 with the number of photons in the peak for each photon distribution in Figs. 13a, 13b, and 13c. contribute equally to the EJ+EJ timing distribution, which is justified by the measured variation of less than 4 % in single-photon response among the three PMTs. To compare FWHMsample with … view at source ↗
Figure 13
Figure 13. Figure 13: Coincidence timing resolution overview for all three scintillator materials. Shown is the timing uncertainty to detect each event in the sample scintillator and one EJ (left) and in both EJ-214 scintillators for reference (right). sample scintillators, we use FWHMsample = √ FWHM2 sample+EJ − FWHM2 ref, where FWHMref = FWHMEJ+EJ √ 2 , (12) where FWHMEJ+EJ is the measured FWHM of the CTR dis￾tribution in th… view at source ↗
Figure 16
Figure 16. Figure 16: Qualitative position reconstruction measurement showing the ability to reconstruct a pattern (upper left) with all three samples. The different number of dots visible for each sample is due to the different sizes of each sample. 4.4. Position Resolution Results 4.4.1. Experimental Results [PITH_FULL_IMAGE:figures/full_fig_p011_16.png] view at source ↗
Figure 15
Figure 15. Figure 15: CRLB calculations based on the measured rise and decay constants of the GaN:Si (top) and ZnO:Ga (bottom) sample for a range of detected photons and different values for the PMT TTS. p.d.f., which was then used in Eq. (2) to calculate the CRLB via Eqs. (3), (4), and (5). With a photodetector with a TTS FWHM below 100 ps and a similar QE and therefore a comparable number of detected photons, timing resoluti… view at source ↗
Figure 18
Figure 18. Figure 18: One simulated 3.5 MeV alpha-particle interaction in YAP:Ce: simulated photon-arrival distribution at the PMT (left), Hamamatsu H13700 PMT response per pixel, and resulting reconstruction of the interaction location (right). −1 0 1 Y [mm] YAP:Ce σ = 0.11 mm µ = (-0.00, -0.00) mm GaN:Si σ = 0.43 mm µ = (0.00, -0.00) mm −1 0 1 X [mm] −1 0 1 Y [mm] ZnO:Ga σ = 0.26 mm µ = (-0.01, -0.00) mm −1 0 1 X [mm] ZnO:Ga… view at source ↗
Figure 17
Figure 17. Figure 17: Quantitative position-resolution measurements us￾ing a mask with hole-to-hole distances between 0.2 mm and 1.4 mm. Measurements for YAP:Ce (a) and GaN:Si (b). holes with GaN:Si is noticeably more difficult. We note that GaN:Si achieves a position resolution of approximately 1 mm, which is adequate for many API imaging scenarios. 4.4.2. Position Resolution Simulations To quantify the position-resolution ca… view at source ↗
read the original abstract

We present the characterization of two fast, crystalline inorganic scintillators, silicon-doped gallium nitride (GaN:Si) and gallium-doped zinc oxide (ZnO:Ga), and compare their performance with cerium-doped yttrium aluminium perovskite (YAP:Ce) for in-vacuum alpha-detection applications that require high-performance timing, position, and energy resolution, such as 3D elemental mapping, medical imaging, and homeland security applications. In this paper, we propose ZnO:Ga and GaN:Si as high-performance drop-in replacements for the alpha detector in Associated Particle Imaging (API) systems. However, the results reported here also have wide applicability. Prior work has reported on polycrystalline forms of ZnO:Ga, which suffer from self-absorption. To our knowledge, GaN:Si has not been proposed to be used in API systems. We present room-temperature scintillation time constants obtained via X-ray-induced time-correlated single-photon counting for both proposed materials. They both exhibit exceedingly fast rise times of <15ps, and high brightness >1000ph/MeV with resolved alpha-peaks. Single-crystal ZnO:Ga and single-crystal GaN:Si yield single-component decays of 805ps and 32ps, respectively. Using a plastic scintillator reference setup, coincidence timing resolution (CTR) and detector timing resolution (DTR) measurements demonstrate a >3x improvement in timing resolution compared to traditional YAP:Ce. GaN:Si and ZnO:Ga exhibit (35(9))ps and (49(5))ps DTR, respectively, compared to(144(2))ps for conventional, single-crystal YAP:Ce. Finally, we evaluate their position resolution in an experimental setup designed for API and measure better than 0.2mm for YAP:Ce and approximately 1mm for GaN:Si. We obtain a position resolution of 0.3mm for ZnO:Ga from simulations. We also present alpha-induced ionoluminescence emission spectra that reveal direct, red-shifted near-bandgap emission.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

1 major / 1 minor

Summary. The manuscript characterizes single-crystal GaN:Si and ZnO:Ga as fast inorganic scintillators for position-resolved alpha detection, reporting X-ray-induced TCSPC decay times (<15 ps rise, 32 ps and 805 ps single-component decays), DTR values of 35(9) ps (GaN:Si) and 49(5) ps (ZnO:Ga) versus 144(2) ps for YAP:Ce obtained via plastic-scintillator coincidence setup, position resolutions of <0.2 mm (YAP:Ce), ~1 mm (GaN:Si) and 0.3 mm simulated (ZnO:Ga), plus alpha-induced ionoluminescence spectra, and proposes the new materials as drop-in replacements for YAP:Ce in API systems.

Significance. If the reported DTR values are shown to be intrinsic and directly comparable, the >3x timing improvement constitutes a concrete advance for fast-timing scintillator applications in medical imaging, security, and elemental mapping; the work supplies specific measured quantities with uncertainties and addresses prior polycrystalline self-absorption limitations.

major comments (1)
  1. [Coincidence timing resolution and DTR extraction section] Coincidence timing resolution and DTR extraction section: the manuscript states that DTR values are obtained from CTR measurements with a plastic scintillator reference under identical conditions, but supplies neither the explicit quadrature-subtraction formula nor independent reference-only CTR runs confirming that the reference contribution remains constant across the three test crystals (different emission wavelengths and light yields). This step is load-bearing for the central >3x improvement claim.
minor comments (1)
  1. [Abstract] Abstract: missing space before the parenthesis in 'compared to(144(2))ps'.

Simulated Author's Rebuttal

1 responses · 0 unresolved

We thank the referee for their careful review and constructive comment on the coincidence timing resolution and DTR extraction. We address the point directly below and will revise the manuscript accordingly.

read point-by-point responses

  1. Referee: [Coincidence timing resolution and DTR extraction section] Coincidence timing resolution and DTR extraction section: the manuscript states that DTR values are obtained from CTR measurements with a plastic scintillator reference under identical conditions, but supplies neither the explicit quadrature-subtraction formula nor independent reference-only CTR runs confirming that the reference contribution remains constant across the three test crystals (different emission wavelengths and light yields). This step is load-bearing for the central >3x improvement claim.

    Authors: We agree that the explicit quadrature-subtraction formula was omitted and should be added for clarity and reproducibility. The DTR is extracted via DTR = sqrt(CTR^2 - DTR_ref^2), where DTR_ref is determined from independent measurements of the plastic scintillator reference detector. Because the reference detector, readout electronics, bias settings, and all other experimental conditions are held strictly identical for the GaN:Si, ZnO:Ga, and YAP:Ce measurements, the reference contribution remains constant irrespective of the test crystal's emission wavelength or light yield. The plastic reference has a broad emission spectrum that is well-matched to the photodetector response in all cases, so no differential effect arises. We will insert the formula and a concise justification of constancy into the revised Coincidence timing resolution and DTR extraction section. This addresses the concern without requiring new data. revision: yes

Circularity Check

0 steps flagged

No circularity: experimental measurements with no derivations or self-referential predictions

full rationale

The paper is a pure experimental characterization reporting measured quantities (rise times, decay constants, CTR, DTR, position resolution) from X-ray and alpha-induced tests on GaN:Si, ZnO:Ga, and YAP:Ce. No equations, first-principles derivations, fitted parameters renamed as predictions, or self-citation chains appear in the abstract or described methods. DTR values are stated as direct experimental outputs from the plastic reference coincidence setup under identical conditions; the skeptic concern about reference subtraction is a potential methodological gap but does not constitute a circular reduction of any claimed derivation to its own inputs. The work is self-contained against external benchmarks (measured timing spectra) and receives the default non-finding for experimental reports.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

Experimental measurement paper; no free parameters, axioms, or invented entities are invoked in the abstract.

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