Pith. sign in

REVIEW 3 major objections 6 minor 54 references

Electrical manipulation and detection of perpendicular altermagnetic order via proximitized Dirac semimetal

T0 review · 3 major / 6 minor · reviewed 2026-07-09 · glm-5.2

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗

Pith's one-line read Dirac semimetal interface unlocks electrical read-write of perpendicular altermagnets

desk verdict Solid experimental package on perpendicular altermagnetic switching; the circularity concern is real but manageable read the letter →

arxiv 2607.07299 v1 pith:7NGRIQJN submitted 2026-07-08 cond-mat.mtrl-sci

Zhaohui Li , Wenqing He , Hua Bai , Yang Wang , Alexander J. Grutter , Guoyi Shi , Xiwen Zhang , Christy Kinane
show 9 more authors
Andrew Caruana Hui Ru Tan Yuchen Pu Chenhui Zhang Yongxi Wang Hanbum Park Anjan Soumyanarayanan Lei Shen Hyunsoo Yang
This is my paper · ORCID
classification cond-mat.mtrl-sci PACS 75.50.Ee75.70.Cn72.25.Ba75.78.-n73.20.-r
keywords altermagnetanomalousHalleffectspin-orbittorqueCrSbPtTe2DiracsemimetalperpendicularmagneticanisotropyNéelvectorswitching
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

Altermagnets—materials that pair antiferromagnetic spin compensation with broken time-reversal symmetry—normally cannot be electrically read or switched when their magnetic order points perpendicular to the film plane, because symmetry forces the anomalous Hall signal to lie orthogonal to the Néel vector. This paper designs a heterostructure of the Dirac semimetal PtTe2 on the g-wave altermagnet CrSb and shows that the engineered interface lifts the symmetry cancellation that forbids a Hall response, producing a large anomalous Hall conductivity (~73 S/cm at 10 K) that aligns with and reads out the perpendicular altermagnetic order. The same interface induces a magnetic moment of about 0.4 Bohr magnetons per interfacial Pt atom, strongly exchange-coupled to the altermagnetic Néel vector, which breaks the degeneracy between the two altermagnetic states and enables deterministic 180-degree switching of the perpendicular Néel vector by spin-orbit torque from PtTe2. The switching efficiency, measured as the ratio of coercive field to critical current density, reaches 11.8 mT·cm²/MA, roughly an order of magnitude above conventional ferromagnetic systems. The authors support the bulk-Néel-vector-switching interpretation with the insensitivity of the critical current to in-plane magnetic field—a hallmark of antiferromagnetic rather than ferromagnetic switching—and with density-functional theory calculations plus a macrospin model incorporating the measured interfacial moment and exchange coupling.

What carries the argument

PtTe2/CrSb heterostructure; symmetry breaking of PT and {C6zT|001/2} operations; interfacial Berry curvature from Cr d-orbital gaps; proximity-induced Pt moment (~0.4 μB/Pt); Cr–Te–Pt exchange pathway; spin Hall effect of PtTe2 providing damping-like torque; macrospin model with A-type antiferromagnetic exchange and perpendicular anisotropy

What would settle it

If a direct probe of the bulk CrSb magnetic state (e.g., element-specific X-ray magnetic linear dichroism or neutron diffraction) showed that only the interfacial Pt moment switches while the CrSb sublattice magnetization remains unchanged, the central claim of bulk altermagnetic order switching would fail.

Watch

Extended reading notes

Core claim

The central discovery is that a topological-semimetal/altermagnet interface can simultaneously solve the two problems that have blocked perpendicular altermagnetic memory: the symmetry-forbidden anomalous Hall readout and the lack of a deterministic electrical switching pathway. The PtTe2/CrSb interface breaks the PT and {C6zT|001/2} symmetries that cancel Berry curvature in bulk CrSb, while interfacial orbital hybridization opens gaps that create new Berry-curvature hotspots, yielding a Hall signal that tracks the perpendicular Néel vector. The proximity-induced interfacial Pt moment provides the symmetry-breaking perturbation needed for deterministic spin-orbit-torque switching, and the Cr

Load-bearing premise

The claim that spin-orbit torque switches the bulk altermagnetic Néel vector, not merely the interfacial Pt moment, rests on indirect evidence: the critical switching current is insensitive to in-plane magnetic field, which is characteristic of antiferromagnetic switching, and macrospin/DFT models with fitted parameters reproduce the observations. No direct measurement confirms that the bulk CrSb sublattice spins reverse independently of the interface.

Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 6 minor

Summary. This manuscript reports the design of a PtTe2/CrSb (Dirac semimetal/altermagnet) heterostructure that enables both anomalous Hall effect (AHE) readout and spin-orbit torque (SOT) switching of the perpendicular Néel vector in the g-wave altermagnet CrSb. The key idea is that the heterointerface breaks the {C6zT|½00} symmetry that forbids AHE in bulk CrSb, while the proximity-induced interfacial Pt moment (~0.4 μB/Pt, confirmed by PNR) provides the symmetry-breaking needed for deterministic switching. The authors present DFT calculations of Berry curvature and AHC, PNR measurements, exchange bias switching in a trilayer, a TMR measurement (~0.3%), SOT switching with correct field-polarity dependence, and a macrospin model. The work addresses an important problem: perpendicular altermagnetic order has been difficult to read and switch due to symmetry constraints.

Significance. The paper tackles a genuinely important problem — the symmetry-forbidden AHE and the lack of deterministic SOT switching for perpendicular altermagnetic order. The heterostructure design concept (using a topological semimetal to break the relevant symmetries and induce an interfacial moment) is creative and potentially generalizable. The multi-pronged experimental approach (PNR, AHE, exchange bias, TMR, SOT switching) and the combination of DFT with macrospin modeling represent a substantial effort. The reported SOT efficiency (μ0Hc/Jc ≈ 11.8 mT cm²/MA⁻¹) and endurance (6000 cycles) are practically relevant. The falsifiable prediction that PtTe2/Cr2O3 should show weak AHC despite interfacial moments (Fig. S6) is a meaningful control that strengthens the AHE-origin claim.

major comments (3)
  1. SOT switching readout circularity (§'Electrical switching', Fig. 4b–d): The AHE signal used to read out the switched state originates from the interfacial PtTe2/CrSb region (via proximity-induced Berry curvature and the interfacial Pt moment). The SOT switching mechanism also operates through this same interfacial moment. Consequently, if SOT switched only the interfacial moment without reversing the bulk Néel vector, the AHE would still register a switching signal. The authors argue that the insensitivity of Ic to in-plane field μ0Hx (Fig. 4d) is characteristic of antiferromagnetic order switching. While this is consistent with bulk Néel vector reversal, it does not uniquely exclude interfacial-only switching — any mechanism with a high anisotropy barrier would show similar field-insensitivity. The macrospin model (Supplementary Note IX) uses fitted interfacial exchange and anisotropy参数
  2. Continued: parameters, so its agreement with experiment is not independent confirmation. The exchange bias switching (Fig. 3d) demonstrates that the Néel vector can be reversed by magnetic field, but this is performed with field, not SOT, and thus does not directly validate the SOT switching pathway. The authors should explicitly acknowledge this limitation and discuss what additional experiment (e.g., a probe sensitive to bulk AFM order at a location distinct from the PtTe2/CrSb interface, or X-ray magnetic linear dichroism under SOT pulses) would be needed to definitively establish bulk Néel vector reversal under SOT. This is load-bearing for the central claim of 'electrical manipulation of perpendicular altermagnetic order.'
  3. Current density calculation (§'Electrical switching'): The current density J is calculated 'assuming a uniform current distribution across the bilayer.' Given the resistivity contrast between PtTe2 and CrSb and the interface, this assumption could introduce a systematic error in the reported SOT efficiency (μ0Hc/Jc = 11.8 mT cm²/MA⁻¹). The authors should provide the resistivities of each layer and estimate the fraction of current flowing in PtTe2 versus CrSb, or at minimum discuss the uncertainty this introduces.
minor comments (6)
  1. In the text describing the TMR measurement, the reference '(Fig. 2e)' appears to be a typo — based on context and the figure captions, this should be '(Fig. 3e).'
  2. The TMR of ~0.3% is quite small. The authors attribute it to strain-induced spin splitting in CrSb (ref. 51), but the mechanism by which this produces a TMR signal in the PtTe2/CrSb/MgO/CoFeB stack is not explained in the main text — it is deferred to Supplementary Note VI. A brief sentence in the main text would help readers assess this result.
  3. The Curie temperature TC = 230 K (of the interfacial moment) is well below room temperature. While the Néel temperature TN ≈ 350 K is above room temperature, the fact that both AHE readout and SOT switching require T < 230 K should be discussed as a practical limitation for memory applications.
  4. Fig. 2g: The decomposition of total magnetization Mt into interfacial magnetization mi and defect-induced moment (Mt − mi) is described qualitatively but the fitting procedure is not detailed in the main text. A brief description of how this decomposition was performed would improve transparency.
  5. The phrase 'altermagnetic proximity effect' is introduced without a precise definition in the main text. While ref. 34–35 are cited, a one-sentence definition would help readers unfamiliar with this concept.
  6. In Fig. 4e, the linear relationship between Ic and μ0Hc at different temperatures is presented as evidence for SOT-driven switching. It would help to state the physical basis for this linearity explicitly.

Circularity Check

0 steps flagged · score 1.0 of 10

No significant circularity; derivation chain is supported by independent measurements and first-principles calculations

full rationale

The paper's central claims rest on multiple independent experimental measurements (PNR for interfacial moment ~0.4 μB/Pt, AHE transport, exchange bias in trilayer, TMR in MTJ, SOT switching curves) and first-principles DFT calculations. The AHE is computed from Berry curvature derived from the electronic band structure of the heterostructure, not fitted to the measured AHE. The interfacial moment used as DFT input comes from PNR, an independent measurement. The macrospin model (Supplementary Note IX) does use some adjustable anisotropy parameters Ki, and its reproduction of switching polarity could be partly constrained by these fits. However, the paper transparently frames the model as providing 'general insight into the mechanism' rather than as independent prediction, and the model's key non-trivial output—that switching is impossible without the interfacial moment mi—is a qualitative mechanistic claim, not a fitted quantity. The self-citation to Ref. 5 (He et al., co-author) is for the interfacial-moment-enabled switching mechanism, but this mechanism is also supported by the present paper's own DFT and PNR data, so the citation is not load-bearing in the circular sense. The skeptic's concern that AHE probes the same interfacial region that mediates switching is a valid experimental design concern (correctness risk), but it is not circularity: the AHE signal is not defined in terms of the switching, nor is the switching defined in terms of the AHE. The derivation chain is self-contained against external benchmarks.

Assumptions & free parameters 4 free parameters · 4 assumptions · 1 invented entities

The paper relies on a small number of experimentally grounded parameters and standard domain assumptions. The main ad hoc element is the uniform current distribution assumption, which is a common simplification in SOT literature. The macrospin model parameters are fitted to reproduce experiments, introducing mild circularity in the theoretical confirmation but not in the experimental claims themselves.

free parameters (4)
  • Interfacial Pt magnetic moment = 0.4 μB/Pt
    Extracted from PNR fitting; used as input to DFT and macrospin models. Not a fundamental constant but an experimentally measured quantity.
  • Interfacial exchange coupling strength (Cr-Te-Pt pathway) = comparable to Cr-Cr super-exchange (exact value in Supp. Note VIII)
    Calculated by DFT using the measured interfacial moment; used in macrospin model to demonstrate switching feasibility.
  • Macrospin model anisotropy parameters Ki = variable per layer (Supp. Note IX)
    Layer-dependent perpendicular magnetic anisotropies adjusted in the macrospin model to reproduce field-driven and SOT-driven switching dynamics.
  • SOT efficiency μ0Hc/Jc = 11.8 mT cm²/MA⁻¹
    Derived from measured critical current and coercivity; not a free parameter per se but a figure of merit extracted from experimental data.
assumptions (4)
  • domain assumption CrSb is a g-wave altermagnet with A-type antiferromagnetic ordering and perpendicular magnetic anisotropy
    Stated in the introduction and supported by refs 37-39. Used as the foundational material property for all subsequent analysis.
  • domain assumption The {C6zT|001/2} symmetry operation forbids net AHE in bulk CrSb
    Invoked in the PtTe2/CrSb heterostructure section to explain why bulk CrSb has no AHE and why the heterostructure is needed. Supported by symmetry analysis and ref 32.
  • ad hoc to paper Current density is uniformly distributed across the PtTe2/CrSb bilayer
    Stated in the SOT switching section: 'The current density is calculated assuming a uniform current distribution across the bilayer.' This simplification affects the reported Jc values and SOT efficiency.
  • domain assumption The interfacial moment is necessary and sufficient to break switching symmetry between opposite altermagnetic states
    Invoked in the SOT switching section and confirmed by macrospin simulations (Fig. S40). This is the mechanism enabling deterministic switching.
invented entities (1)
  • Altermagnetic proximity effect at PtTe2/CrSb interface independent evidence
    purpose: Explains the emergence of AHE and interfacial magnetization in the heterostructure
    The concept is supported by PNR measurement of interfacial moment, XPS evidence of charge redistribution, DFT band structure calculations, and control samples (PtTe2/Cr, PtTe2/Cr2O3) showing absence of AHE. Falsifiable: different altermagnet/topological combinations should show similar effects.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Electrical manipulation and detection of perpendicular altermagnetic order via proximitized Dirac semimetal." pith.science (2026). https://pith.science/paper/7NGRIQJN

@misc{pith2026260707299,
  author       = {Pith},
  title        = {Pith review of: Electrical manipulation and detection of perpendicular altermagnetic order via proximitized Dirac semimetal},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/7NGRIQJN}},
  note         = {Machine review of arXiv:2607.07299}
}
read the original abstract

Altermagnets, which combine antiferromagnetic-like magnetic compensation with ferromagnetic-like broken time-reversal symmetry, hold great promise for high-density and ultrafast spintronic applications. However, the detection and switching of perpendicular altermagnetic order are fundamentally constrained by magnetic symmetry, restricting both fundamental studies and practical implementation. We realize robust electrical reading and deterministic switching of perpendicular altermagnetic order by designing a Dirac semimetal/altermagnet heterostructure of PtTe2/CrSb. This engineered interface enables anomalous Hall readout via altermagnetic proximity effect and delivers efficient spin-orbit torque for manipulating the epitaxial perpendicular Neel vector in CrSb. These findings significantly broaden the functional scope of altermagnetic heterostructures and pave the way for highly scalable altermagnetic memory.

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

54 extracted references · 54 canonical work pages

  1. [1]

    Miron, I. M. et al. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection. Nature 476, 189-193 (2011)

    work page 2011

  2. [2]

    Liu, L. et al. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum. Science 336, 555-558 (2012)

    work page 2012

  3. [3]

    Ikeda, S. et al. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. Nat. Mater. 9, 721-724 (2010)

    work page 2010

  4. [4]

    Higo, T. et al. Perpendicular full switching of chiral antiferromagnetic order by current. Nature 607, 474-479 (2022)

    work page 2022

  5. [5]

    He, W. et al. Electrical switching of the perpendicular Né el order in a collinear antiferromagnet. Nat. Electron. 7, 975-983 (2024)

    work page 2024

  6. [6]

    H., Sinova, J., Nakatsuji, S

    Šmejkal, L., MacDonald, A. H., Sinova, J., Nakatsuji, S. & Jungwirth, T. Anomalous Hall antiferromagnets. Nat. Rev. Mater. 7, 482-496 (2022)

    work page 2022

  7. [7]

    & Wunderlich, J

    Jungwirth, T., Marti, X., Wadley, P. & Wunderlich, J. Antiferromagnetic spintronics. Nat. Nanotechnol. 11, 231-241 (2016)

    work page 2016

  8. [8]

    Vaidya, P. et al. Subterahertz spin pumping from an insulating antiferromagnet. Science 368, 160-165 (2020)

    work page 2020

Show all 54 references
  1. [9]

    & Higo, T

    Nakatsuji, S., Kiyohara, N. & Higo, T. Large anomalous Hall effect in a non-collinear antiferromagnet at room temperature. Nature 527, 212-215 (2015)

    2015

  2. [10]

    Tsai, H. et al. Electrical manipulation of a topological antiferromagnetic state. Nature 580, 608-613 (2020)

    2020

  3. [11]

    Chen, X. et al. Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction. Nature 613, 490-495 (2023)

    2023

  4. [12]

    Zhu, Y. P. et al. Observation of plaid -like spin splitting in a noncoplanar antiferromagnet. Nature 626, 523-528 (2024)

    2024

  5. [13]

    Zheng, Z. et al. All-electrical perpendicular switching of chiral antiferromagnetic order. Nat. Mater. 24, 1407–1413 (2025)

    2025

  6. [14]

    Yutaro T. et al. Electrical coherent driving of chiral antiferromagnet. Science 389, 830-834 (2025)

    2025

  7. [15]

    & Jungwirth, T

    Šmejkal, L., Sinova, J. & Jungwirth, T. Emerging Research Landscape of Altermagnetism. Phys. Rev. X 12, 040501 (2022)

    2022

  8. [16]

    Song, C. et al. Altermagnets as a new class of functional materials. Nat. Rev. Mater. 10, 473-485 (2025)

    2025

  9. [17]

    Chen, X. et al. Unconventional magnons in collinear magnets dictated by spin space groups. Nature (2025)

    2025

  10. [18]

    Krempasky, J. et al. Altermagnetic lifting of Kramers spin degeneracy. Nature 626, 517-522 (2024)

    2024

  11. [19]

    & Sinova, J

    Šmejkal, L., González-Herná ndez, R., Jungwirth, T. & Sinova, J. Crystal time-reversal symmetry breaking and spontaneous Hall effect in collinear antiferromagnets. Sci. Adv. 6, eaaz8809 (2020)

    2020

  12. [20]

    -W., Rashba, E

    Yuan, L.-D., Wang, Z., Luo, J. -W., Rashba, E. I. & Zunger, A. Giant momentum - dependent spin splitting in centrosymmetric low-Z antiferromagnets. Phys. Rev. B 102, 014422 (2020)

    2020

  13. [21]

    Gonzalez Betancourt, R. D. et al. Spontaneous Anomalous Hall Effect Arising from an Unconventional Compensated Magnetic Phase in a Semiconductor. Phys. Rev. Lett. 130, 036702 (2023). 21

    2023

  14. [22]

    Han, L. et al. Electrical 180° switching of Né el vector in spin-splitting antiferromagnet. Sci. Adv. 10, eadn0479 (2024)

    2024

  15. [23]

    Takagi, R. et al. Spontaneous Hall effect induced by collinear antiferromagnetic order at room temperature. Nat. Mater. 24, 63-68 (2025)

    2025

  16. [24]

    Bose, A. et al. Tilted spin current generated by the collinear antiferromagnet ruthenium dioxide. Nat. Electron. 5, 267-274 (2022)

    2022

  17. [25]

    Bai, H. et al. Observation of Spin Splitting Torque in a Collinear Antiferromagnet RuO2. Phys. Rev. Lett. 128, 197202 (2022)

    2022

  18. [26]

    Olena F. et al. Observation of time-reversal symmetry breaking in the band structure of altermagnetic RuO2. Sci. Adv. 10, eadj4883 (2024)

    2024

  19. [27]

    Amin, O. J. et al. Nanoscale imaging and control of altermagnetism in MnTe. Nature 636, 348-353 (2024)

    2024

  20. [28]

    A., Afanasiev, D., Kimel, A

    Leenders, R. A., Afanasiev, D., Kimel, A. V. & Mikhaylovskiy, R. V. Canted spin order as a platform for ultrafast conversion of magnons. Nature 630, 335-339 (2024)

    2024

  21. [29]

    F., Zhang, S

    Shao, D. F., Zhang, S. H., Li, M., Eom, C. B. & Tsymbal, E. Y. Spin-neutral currents for spintronics. Nat. Commun. 12, 7061 (2021)

    2021

  22. [30]

    B., González -Herná ndez, R., Sinova, J

    Šmejkal, L., Hellenes, A. B., González -Herná ndez, R., Sinova, J. & Jungwirth, T. Giant and Tunneling Magnetoresistance in Unconventional Collinear Antiferromagnets with Nonrelativistic Spin -Momentum Coupling. Phys. Rev. X 12, 011028 (2022)

    2022

  23. [31]

    Wadley, P. et al. Electrical switching of an antiferromagnet. Science 351, 587-590 (2016)

    2016

  24. [32]

    Zhou, Z. et al. Manipulation of the altermagnetic order in CrSb via crystal symmetry. Nature 638, 645-650 (2025)

    2025

  25. [33]

    Xiao, R.-C. et al. Anomalous-Hall Né el textures in altermagnetic materials. Sci. China Phys. Mech. Astron. 69, 217511 (2025)

    2025

  26. [34]

    Chen, R. et al. Probing k-Space Alternating Spin Polarization via the Anomalous Hall Effect. Phys. Rev. Lett. 135, 096602 (2025)

    2025

  27. [35]

    Zhu, Z. et al. Altermagnetic Proximity Effect. arXiv:2509.06790v1 (2025)

    2025

  28. [36]

    Hoglund, E. R. et al. Emergent interface vibrational structure of oxide superlattices. Nature 601, 556-561 (2022)

    2022

  29. [37]

    Reimers, S. et al. Direct observation of altermagnetic band splitting in CrSb thin films. Nat. Commun. 15, 2116 (2024)

    2024

  30. [38]

    Ding, J. et al. Large Band Splitting in g-Wave Altermagnet CrSb. Phys. Rev. Lett. 133, 206401 (2024)

    2024

  31. [39]

    Li, C. et al. Topological Weyl altermagnetism in CrSb. Commun. Phys. 8, 311 (2025)

    2025

  32. [40]

    Wang, F. et al. Field-free switching of perpendicular magnetization by two - dimensional PtTe 2/WTe2 van der Waals heterostructures with high spin Hall conductivity. Nat. Mater. 23, 768-774 (2024)

    2024

  33. [41]

    Lu, Y. M. et al. Pt magnetic polarization on Y 3Fe5O12 and magnetotransport characteristics. Phys. Rev. Lett. 110, 147207 (2013)

    2013

  34. [42]

    Nakayama, H. et al. Spin Hall magnetoresistance induced by a nonequilibrium proximity effect. Phys. Rev. Lett. 110, 206601 (2013)

    2013

  35. [43]

    Miriam G., F. et al. Engineering altermagnetic symmetry to enable anomalous Hall response in Cr1−xMnxSb. arXiv:2602.06173v1 (2026). 22

    2026

  36. [44]

    Pylypovskyi, O. V. et al. Surface-Symmetry-Driven Dzyaloshinskii -Moriya Interaction and Canted Ferrimagnetism in Collinear Magnetoelectric Antiferromagnet Cr2O3. Phys. Rev. Lett. 132, 226702 (2024)

    2024

  37. [45]

    F., Urru, A., Bhowal, S., Ederer, C

    Weber, S. F., Urru, A., Bhowal, S., Ederer, C. & Spaldin, N. A. Surface Magnetization in Antiferromagnets: Classification, Example Materials, and Relation to Magnetoelectric Responses. Phys. Rev. X 14, 021033 (2024)

    2024

  38. [46]

    Riddiford, L. J. et al. Understanding Signatures of Emergent Magnetism in Topological Insulator/Ferrite Bilayers. Phys. Rev. Lett. 128, 126802 (2022)

    2022

  39. [47]

    He, Q. L. et al. Tailoring exchange couplings in magnetic topological - insulator/antiferromagnet heterostructures. Nat. Mater. 16, 94-100 (2017)

    2017

  40. [48]

    Gennzst, P.-G. D. Effects of Double Exchange in Magnetic Crystals. Phys. Rev. 118, 141-154 (1960)

    1960

  41. [49]

    Guo, H. et al. Layer-dependent spin-orbit torque switching of Né el vector in a van der Waals antiferromagnet. Nat. Commun. 16, 8911 (2025)

    2025

  42. [50]

    Luo, Y. et al. Current-Induced Magnetization Switching via 180 degrees Né el Vector Reversal in Pt/Cr2O3/Co Trilayers. Adv. Mater., e08347 (2025)

    2025

  43. [51]

    H., Jaeschke -Ubiergo, R., Šmejkal, L

    Karetta, B., Verbeek, X. H., Jaeschke -Ubiergo, R., Šmejkal, L. & Sinova, J. Strain - controlled g- to d-wave transition in altermagnetic CrSb. Phys. Rev. B 112, 094454 (2025)

    2025

  44. [52]

    Zhang, S. et al. Deterministic Switching of the Né el Vector by Asymmetric Spin Torque. arXiv:2506.10786 (2025)

    2025

  45. [53]

    Xu, J. et al. Exchange-Torque-Triggered Fast Switching of Antiferromagnetic Domains. Phys. Rev. Lett. 128, 137201 (2022)

    2022

  46. [54]

    Chen, Y., Liu, X., Lu, H. Z. & Xie, X. C. Electrical Switching of Altermagnetism. Phys. Rev. Lett. 135, 016701 (2025)

    2025

Pith tools

Reviewed July 9, 2026 · model on record in the stance chip above.