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REVIEW 5 major objections 6 minor 61 references

Dirac topology, anomalous Hall response, and giant magnetoresistance in carrier-compensated altermagnetic semimetal NiS

T0 review · 5 major / 6 minor · reviewed 2026-08-02 · deepseek-v4-flash

Pith's one-line read Hexagonal NiS is a compensated 3d altermagnetic semimetal in which SOC-gapped Dirac-like crossings generate intense Berry curvature, a large intrinsic spin Hall conductivity, a symmetry-allowed anomalous Hall response, and nonsaturating mag

desk verdict Solid computational study with real new transport predictions for NiS, but the headline claims are oversold and the paper has internal inconsistencies (MR, Néel temperature) that need fixing before the numbers are trusted. read the letter →

arxiv 2607.13400 v1 pith:ZPOYSN3P submitted 2026-07-15 cond-mat.str-el cond-mat.mtrl-sci

classification cond-mat.str-elcond-mat.mtrl-sci
keywords altermagnetismDiracsemimetalspinHalleffectanomalousmagnetoresistanceNiSBerrycurvaturecarriercompensation
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper argues that low-temperature NiS is a three-dimensional altermagnetic semimetal: its A-type antiferromagnetic order has zero net magnetization, yet the rotational symmetry of the NiAs lattice produces momentum-dependent spin splitting of up to about 0.7 eV. When spin–orbit coupling is included, fourfold Dirac-like crossings open small gaps and act as Berry-curvature hot spots, yielding a spin Hall conductivity of about −171 (ℏ/e) S/cm at the Fermi level and a finite anomalous Hall effect even though the material is compensated and collinear. The same band structure has nearly equal electron and hole pockets (about 2.7×10^20 cm^-3 each), which drives nonsaturating magnetoresistance of order 10^3%, matching earlier measurements. A first-principles spin Hamiltonian with dominant long-range superexchange reproduces the experimental Néel temperature near 446 K, so magnetism and transport are traced to the same symmetry framework. The payoff is a chemically simple 3d platform where altermagnetism, Dirac-like topology, carrier compensation, and strong magnetotransport coexist.

What carries the argument

The load-bearing object is the magnetic symmetry group: preserved inversion P, the antiunitary S=Tτ_{1/2}, and the rotational coset of the NiAs lattice relating the two spin sublattices. This combination defines the altermagnetic state and lets Berry curvature survive despite zero net magnetization. The main electronic ingredients are the fourfold Dirac-like crossings enforced by the non-symmorphic P6_3/mmc space group; with spin–orbit coupling they become gapped avoided crossings that act as Berry-curvature hot spots. Kubo–Berry linear response turns those hot spots into large spin and anomalous Hall conductivities, and semiclassical Boltzmann transport turns the nearly compensated Fermi su

What would settle it

Angle-resolved photoemission on single-crystal NiS along L–Γ: if the predicted ~0.7 eV momentum-dependent spin splitting with opposite spin orderings in the two planes is not observed, the altermagnetic band structure on which the Hall and magnetoresistance predictions rest is incorrect.

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Extended reading notes

Core claim

The paper establishes hexagonal NiS as a compensated 3d altermagnetic semimetal. Its A-type antiferromagnetic order preserves inversion and S=Tτ_{1/2} while relating the two spin sublattices by rotation, so time reversal is broken without a net moment. That symmetry permits momentum-dependent spin splitting and nonzero Berry curvature. SOC gaps at the symmetry-enforced Dirac-like crossings (at K and along L–A) act as Berry-curvature hot spots, producing a large intrinsic spin Hall conductivity (≈−171 (ℏ/e) S/cm at E_F), a sign-reversing anomalous Hall effect, and nonsaturating magnetoresistance of order 10^3% from near-perfect electron–hole compensation. A first-principles spin Hamiltonian r

Load-bearing premise

The calculations assume that LSDA+U with a single Hubbard U of 2.3 eV (taken from earlier studies of NiS) accurately captures the low-energy Ni-3d bands, including the near-perfect electron–hole compensation and the SOC-induced gaps; if correlation effects shift those bands, the quantitative values of the Hall conductivities, magnetoresistance, and Néel temperature would change.

Editorial extensions

If this is right

  • NiS is a 3d antiferromagnet with an intrinsic spin Hall conductivity comparable to 4d/5d metals, so spin-current generation can be achieved in a light, chemically simple compound without a net magnetic moment.
  • Moderate doping or gating can tune the spin Hall conductivity from roughly −282 to +314 (ℏ/e) S/cm and drive the anomalous Hall conductivity through sign changes, making the Hall response electrically controllable.
  • The nearly perfect electron–hole compensation produces nonsaturating magnetoresistance of order 10^3%, matching measured values and placing NiS alongside established compensated semimetals such as WTe2.
  • The first-principles spin Hamiltonian quantitatively reproduces the experimental Néel temperature (≈446 K), so the magnetic model underlying the altermagnetic state is consistent with thermodynamic data.
  • Finite anomalous Hall conductivity in a collinear compensated antiferromagnet follows from altermagnetic symmetry alone, removing the usual requirement of noncollinearity or net magnetization.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • The symmetry mechanism should be generic: extended to other NiAs-type 3d chalcogenides and pnictides with A-type order, the same rotational-coset symmetry may yield compensated altermagnetic semimetals with comparable transport responses—a testable materials search.
  • The computed anomalous Hall sign reversal with chemical potential suggests that electrostatic gating or chemical substitution could switch Hall polarity in devices, turning NiS into a tunable Hall switch; the paper does not propose this application.
  • Because the spin and anomalous Hall effects arise specifically from SOC-gapped Dirac crossings, strain or uniaxial pressure that moves those crossings relative to E_F should strongly modulate the Hall conductivities—a concrete prediction that can be checked before full device work.
  • If the ~0.7 eV altermagnetic splitting is confirmed by ARPES, NiS may also serve as a spin-splitter or spin-filter material even in a nominally antiferromagnetic, zero-magnetization state, though that functionality is not discussed in the paper.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

5 major / 6 minor

Summary. The paper claims to establish hexagonal NiS as a compensated 3d altermagnetic semimetal in which altermagnetic symmetry, SOC-gapped Dirac-like crossings, Berry-curvature transport, and carrier compensation coexist. Using LSDA+U+SOC band structures, Wannier-based Kubo/Boltzmann transport, and LKAG-derived spin Hamiltonians with sLLG simulations, the authors report a large spin Hall conductivity, a symmetry-allowed but numerically small anomalous Hall conductivity at the Fermi level, a nearly compensated Fermi surface with MR ~1.7e3% at 30 T, and a calculated Néel temperature of ~446 K that is described as agreeing with experiment. The paper combines standard, well-established computational methods and presents dense k-mesh results, but several internal inconsistencies and robustness gaps affect the central quantitative claims.

Significance. If the claims are correct, NiS would be a valuable 3d platform in which altermagnetic order, SOC-induced Berry-curvature responses, and semimetallic carrier compensation coexist in a chemically simple material. The calculation pipeline is standard and reproducible in principle, and the SHC values, momentum-resolved Berry curvature, and FS compensation are concrete, falsifiable predictions. However, because the quantitative predictions are extremely sensitive to details of the band structure near EF, the lack of robustness tests and the internal inconsistencies described below must be resolved before the central claims can be taken as established.

major comments (5)
  1. [SM: LSDA+U+SOC calculations; Electronic structure] The entire transport and compensation picture rests on a single LSDA+U parametrization with U=2.3 eV, 'adopted based on earlier studies of NiS [18]'. No U scan, no alternative exchange-correlation functional, and no comparison with measured Fermi-surface or ARPES data are provided. Since the SHC and AHC in Fig. 3 change by hundreds of S/cm over an energy window of a few tenths of an eV, and the claimed near-perfect electron-hole compensation is an accidental band-gradient property rather than a symmetry invariant, the robustness of the central quantitative predictions to moderate U variations is a load-bearing concern. A U scan (for example, 2.0–3.0 eV) and/or a GGA+U or hybrid-functional cross-check is needed to establish that the altermagnetic gaps, Berry-curvature hot spots, and carrier densities are not artifacts of this one choice.
  2. [Spin Hamiltonian; Fig. 5(b); Table I] The paper states in the Electronic Structure section that NiS undergoes a first-order transition at T_t ≈ 265 K to an A-type antiferromagnetic semimetal, but the spin-dynamics section reports T_N ≈ 446 K from the first-principles spin Hamiltonian and calls this 'excellent agreement with experiment [39]'. These two statements are mutually inconsistent: 446 K is ~1.7 times larger than 265 K. Either the experimental reference for T_N is different from the transition temperature discussed throughout the paper, or the sLLG model overestimates T_N. This discrepancy must be reconciled; as written, the magnetic-side claim is not internally consistent.
  3. [Abstract vs. 'Fermi-surface topology and large magnetoresistance'] The abstract states that the magnetoresistance exceeds 10000%, while the main text reports MR_zz ≈ 1.7×10^3% at 30 T and compares this with experimental MR ~1500% (Ref. [21]). A factor-of-six discrepancy between the abstract and the body undermines the headline claim. Please correct the abstract or state clearly that 10000% is an extrapolated or upper-bound estimate; if the latter, specify the field and model assumptions used for the extrapolation.
  4. [Spin and anomalous Hall conductivity; Fig. 3(b)] The text describes 'a sizable intrinsic AHC' and an 'anomalous Hall response despite zero net magnetization,' but the calculated AHC at E_F is explicitly stated to be 'close to zero' (Fig. 3(b)), with the nonzero values of order 15–20 S/cm occurring at -0.5 eV and +0.8 eV. If the measurable AHC at E_F is essentially zero, the headline claim of a finite anomalous Hall response is misleading. The authors should clearly separate the symmetry-allowed statement from the numerical value at E_F, and should state whether any finite AHC at E_F is actually predicted at the doping level relevant to experiments.
  5. [Electronic structure; title and conclusion] The title and abstract use 'Dirac topology,' but the crossings labeled α–δ are fourfold degenerate in the absence of SOC and are split or gapped once SOC is included; no topological invariant or surface-state signature is computed. In the conclusion the authors call the material a 'Dirac semimetal.' This overstates the topological classification. The manuscript should either compute and report a topological invariant (e.g., Z2 indices, mirror Chern numbers, or surface states) or consistently use the more cautious 'Dirac-like crossings' terminology throughout, including the title.
minor comments (6)
  1. [Figure references] The magnetotransport discussion repeatedly refers to 'Fig. S8(d)–(f)' and insets, but the main text also has a 'Fig. 4' with the same panels. Please synchronize the numbering and remove the duplicate/incorrect citations.
  2. [Abstract and text wording] In the abstract, 'nonsaturating magnetoresistance exceeding 10000 percent' should be reconciled with the body value. Also, 'sizable intrinsic AHC' should be replaced by a statement that the AHC is symmetry-allowed but numerically near zero at E_F.
  3. [Spin Hamiltonian section] The sentence 'Thus, the first-principles derived spin Hamiltonian quantitatively reproducing the experimental Néel temperature' is grammatically incomplete; please revise.
  4. [Supplemental Material] There are typographical errors, e.g., 'properti es,' 'volet' should be 'violet,' and 'T y p' in the references. Also, Eq. (S6) has the relaxation time appearing on the left side in a way that is dimensionally confusing; please clarify the definition of σ(n)_ij(B).
  5. [Reference formatting] Ref. [4] appears to be mis-formatted ('Bohm-Jung Yang, Classification...'); the author list should be corrected. Please also ensure Refs. [25] and [31] include complete titles and page/article numbers.
  6. [Data availability] The data-availability statement says data are available from the authors upon request. Given the quantitative nature of the predictions, please consider depositing the Wannier Hamiltonians, input files, and spin-model parameters in a public repository to strengthen reproducibility.

Circularity Check

0 steps flagged · score 1.0 of 10

No significant circularity: transport and magnetic results are computed from standard first-principles formulas; only minor self-citation is the Hubbard U=2.3 eV from Ref. [18].

full rationale

The derivation chain is essentially self-contained. The SHC and AHC values are obtained by applying the standard Kubo-Berry linear-response formalism (SM Eqs. S1-S5) to a Wannier-interpolated band structure derived from LSDA+U+SOC; the MR is obtained from semiclassical Boltzmann transport (SM Eqs. S6-S8). These are first-principles calculations, not fits to the advertised outputs, and no equation in the paper reduces a predicted quantity to an input by construction. The altermagnetic classification is imported from Ref. [20] and from the symmetry analysis, and the paper independently displays spin-split bands and Berry-curvature hot spots. The one noticeable self-citation is the choice of U=2.3 eV, taken from Ref. [18], a prior study by the corresponding author. This is an empirical DFT parameter, not a target result, and there is no evidence in the text that U was tuned to reproduce the reported SHC, AHC, MR, or T_N. A robustness concern is that the paper does not scan U or test alternative functionals, and the T_N=446 K from sLLG sits uneasily with the 265 K transition discussed in the main text; however, that is a correctness/robustness issue, not a circular reduction. Therefore no load-bearing 'prediction' is equivalent to its own input by definition.

Assumptions & free parameters 3 free parameters · 6 assumptions · 0 invented entities

No new physical entities are postulated. The burden comes from empirical parameters (U, tau_n) and from DFT/classical-spin modeling assumptions that enter before the advertised predictions.

free parameters (3)
  • Hubbard U (Ni 3d) = 2.3 eV
    Adopted from Ref [18], a prior NiS study by the corresponding author; controls correlation strength, band gap, Fermi-surface pockets, and all Berry-curvature/transport results. No U-sensitivity analysis is given.
  • Band-dependent relaxation times tau_n = not specified
    Boltzmann transport requires tau_n values; the paper states tau is band-dependent but k-independent and gives no numerical values. The MR ratio may be sensitive to relative tau_n, so this is an unstated free parameter.
  • Gilbert damping alpha (equilibration) = 1.0
    Used in sLLG equilibration; should not affect equilibrium thermodynamics but is a chosen simulation parameter.
assumptions (6)
  • domain assumption LSDA+U with U=2.3 eV yields the correct A-type AFM ground state and low-energy band structure of NiS.
    Used throughout; U is taken from previous work, not derived in this paper.
  • domain assumption Rigid-band approximation: the applied magnetic field does not modify the band structure or Fermi surface topology.
    Stated in the SM Boltzmann transport section as a standard assumption.
  • domain assumption Relaxation-time approximation with tau band-dependent but independent of crystal momentum k.
    Stated in the SM Boltzmann transport section.
  • domain assumption Magnetic interactions map to a Heisenberg spin Hamiltonian with isotropic J, DM, and single-ion anisotropy, and classical sLLG reproduces the finite-temperature quantum statistics.
    Used for the spin Hamiltonian and sLLG simulations; classical spin dynamics is an approximation for a quantum magnet.
  • domain assumption Wannier interpolation accurately reproduces the DFT bands near the Fermi level.
    Validated in SM Fig. S2(a); standard but not exact.
  • domain assumption Kubo-Berry linear response formulas for intrinsic SHC/AHC are valid in the clean limit.
    Standard formalism; used to link Berry curvature to transport.

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Cite this review

Pith. "Pith review of Dirac topology, anomalous Hall response, and giant magnetoresistance in carrier-compensated altermagnetic semimetal NiS." pith.science (2026). https://pith.science/paper/ZPOYSN3P

@misc{pith2026260713400,
  author       = {Pith},
  title        = {Pith review of: Dirac topology, anomalous Hall response, and giant magnetoresistance in carrier-compensated altermagnetic semimetal NiS},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/ZPOYSN3P}},
  note         = {Machine review of arXiv:2607.13400}
}
read the original abstract

We combine first-principles density-functional theory, Berry-curvature analysis, semiclassical Boltzmann transport, and atomistic spin dynamics to establish hexagonal NiS as a compensated 3d altermagnetic semimetal in which topology, magnetism, and lattice dynamics are intrinsically intertwined. The rotational coset symmetry of the NiAs lattice produces momentum-dependent spin splitting characteristic of altermagnetism. With spin-orbit coupling, gapped Dirac-like crossings generate intense Berry-curvature hot spots and nearly compensated electron-hole pockets. This leads to a large and anisotropic intrinsic spin Hall conductivity comparable to that of several 4d, 5d metals, a symmetry-allowed anomalous Hall response despite zero net magnetization, and nonsaturating magnetoresistance exceeding 10000 percent. On the magnetic side, first-principles determination of the exchange tensor reveals dominant long-range superexchange and sizable anisotropic interactions, quantitatively reproducing the experimental Neel temperature. Our results identify NiS as a model 3d platform in which carrier compensation, altermagnetic symmetry, Berry-curvature driven transport, and lattice-sensitive magnetism coexist within a single symmetry framework, offering a design principle for multi-functional quantum responses in correlated transition-metal compounds.

Figures

Figures reproduced from arXiv: 2607.13400 by the authors.

Figure 1
Figure 1. FIG. 1. (a),(f) Band dispersion along the [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. FIG. 2. Spin-resolved band dispersions along the (a) [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 4
Figure 4. FIG. 4. (a) Fermi surface (FS) in the hexagonal Brillouin zone, with [PITH_FULL_IMAGE:figures/full_fig_p004_4.png] view at source ↗
Figures from the paper (1 more)
Figure 5
Figure 5. Figure 5: FIG. 5. (a) A-type antiferromagnetic structure of NiS illustrating [PITH_FULL_IMAGE:figures/full_fig_p005_5.png]

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Works this paper leans on

61 extracted references · 3 canonical work pages

  1. [20]

    Mandal, A

    A. Mandal, A. Das, and B. R. K. Nanda, Deterministic role of chemical bonding in the formation of altermagnetism: Reflec- tion from the correlated electron system NiS, Phys. Rev. B112, 014420 (2025)

  2. [21]

    Chen and Y

    P. Chen and Y . Du, Giant Magnetoresistance in NiS, Jour- nal of the Physical Society of Japan70, 209 (2001), https://doi.org/10.1143/JPSJ.70.209

  3. [39]

    J. M. D. Coey and R. Brusetti, Heat capacity of nickel sulfide and its semimetal-metal transition, Phys. Rev. B11, 671 (1975)

  4. [18]

    S. K. Panda, I. Dasgupta, E. ¸ Sa¸ sıo˘glu, S. Blügel, and D. D. Sarma, Systematics of the magnetic properties of NiS 2−xSex: A first-principles study, Scientific Reports3, 2995 (2013)

  5. [1]

    S. M. Young, S. Zaheer, J. C. Y . Teo, C. L. Kane, E. J. Mele, and A. M. Rappe, Dirac semimetal in three dimensions, Phys. Rev. Lett.108, 140405 (2012)

  6. [2]

    Z. Wang, Y . Sun, X.-Q. Chen, C. Franchini, G. Xu, H. Weng, X. Dai, and Z. Fang, Dirac semimetal and topological phase transitions inA 3Bi (A=Na, K, Rb), Phys. Rev. B85, 195320 (2012)

  7. [3]

    Z. Wang, H. Weng, Q. Wu, X. Dai, and Z. Fang, Three- dimensional Dirac semimetal and quantum transport in Cd3As2, Phys. Rev. B88, 125427 (2013)

  8. [4]

    N. N. Bohm-Jung Yang, Classification of stable three- dimensional dirac semimetals with nontrivial topology, Nature Communications5, 4898 (2014)

Show all 61 references
  1. [5]

    C. Fang, H. Weng, X. Dai, and Z. Fang, Topological nodal line semimetals, Chinese Physics B25, 117106 (2016)

  2. [6]

    M. N. Ali, J. Xiong, S. Flynn, J. Tao, Q. D. Gibson, L. M. Schoop, T. Liang, N. Haldolaarachchige, M. Hirschberger, N. P. Ong, and R. J. Cava, Large, non-saturating magnetoresistance in WTe2, Nature514, 205 (2014)

  3. [7]

    Shekhar, A

    C. Shekhar, A. K. Nayak, Y . Sun, M. Schmidt, M. Nicklas, I. Leermakers, U. Zeitler, Y . Skourski, J. Wosnitza, C. Felser, et al., Extremely large magnetoresistance and ultrahigh mobil- ity in the topological Weyl semimetal candidate NbP, Nature Physics11, 645 (2015)

  4. [8]

    F. F. Tafti, Q. D. Gibson, S. Kushwaha, N. Haldolaarachchige, and R. J. Cava, Resistivity plateau and extreme magnetoresis- tance in LaSb, Nature Physics12, 272 (2016)

  5. [9]

    A. B. Pippard,Magnetoresistance in Metals(Cambridge Uni- versity Press, Cambridge, UK, 1989)

  6. [10]

    A. A. Burkov, Topological semimetals, Nature Materials15, 1145–1148 (2016)

  7. [11]

    N. P. Armitage, E. J. Mele, and A. Vishwanath, Weyl and dirac semimetals in three-dimensional solids, Rev. Mod. Phys.90, 015001 (2018)

  8. [12]

    Trahan, R

    J. Trahan, R. G. Goodrich, and S. F. Watkins, X-Ray Diffrac- tion Measurements on Metallic and Semiconducting Hexagonal NiS, Phys. Rev. B2, 2859 (1970)

  9. [13]

    J. T. Sparks and T. Komoto, Metal-to-Semiconductor Transition in Hexagonal NiS, Rev. Mod. Phys.40, 752 (1968)

  10. [14]

    J. T. Sparks and T. Komoto, Neutron Diffraction Study of NiS, Journal of Applied Physics34, 1191 (1963)

  11. [15]

    J. M. D. Coey, R. Brusetti, A. Kallel, J. Schweizer, and H. Fuess, Magnetic Structure of NiS, Phys. Rev. Lett.32, 1257 (1974)

  12. [16]

    Nakamura, A

    M. Nakamura, A. Sekiyama, H. Namatame, H. Kino, A. Fuji- mori, A. Misu, H. Ikoma, M. Matoba, and S. Anzai, Opening of a Correlation-Induced Band Gap in NiS, Phys. Rev. Lett.73, 2891 (1994)

  13. [17]

    D. D. Sarma, A. Chainani, K. Sreedhar, and S. R. Barman, Pho- toemission studies of NiS across the phase transition, Physical Review B45, 7224 (1992)

  14. [19]

    V . I. Anisimov, J. Zaanen, and O. K. Andersen, Band theory and Mott insulators: HubbardUinstead of StonerI, Phys. Rev. B 44, 943 (1991)

  15. [22]

    The Supplemental Material also contains refs

    See Supplemental Material (SM) for details of the LSDA+U+SOC calculations; Berry curvature, spin Hall conductivity, and Boltzmann transport calculations for magnetoresistance; magnetic exchange interactions and spin- dynamics simulations; crystal structure and symmetry analysi...

  16. [23]

    Eriksson, A

    O. Eriksson, A. Bergman, L. Bergqvist, and J. Hellsvik,Atom- istic Spin Dynamics: F oundations and Applications(Oxford University Press, 2017)

  17. [24]

    Skubic, J

    B. Skubic, J. Hellsvik, L. Nordström, and O. Eriksson, A method for atomistic spin dynamics simulations: implementa- tion and examples, Journal of Physics: Condensed Matter20, 315203 (2008)

  18. [25]

    Y .-X. Li, Y . Chen, L. Pan, S. Li, S.-B. Zhang, and H.-Z. 12 Lu, Exploration of altermagnetism in RuO2, Science China Physics, Mechanics & Astronomy69, 10.1007/s11433-026- 2913-8 (2026)

  19. [26]

    Jiang, Z.-A

    Y .-Y . Jiang, Z.-A. Wang, K. Samanta, S.-H. Zhang, R.-C. Xiao, W. J. Lu, Y . P. Sun, E. Y . Tsymbal, and D.-F. Shao, Prediction of giant tunneling magnetoresistance in RuO 2/TiO2/RuO2 (110) antiferromagnetic tunnel junctions, Phys. Rev. B108, 174439 (2023)

  20. [27]

    J. Ding, Z. Jiang, X. Chen, Z. Tao, Z. Liu, T. Li, J. Liu, J. Sun, J. Cheng, J. Liu, Y . Yang, R. Zhang, L. Deng, W. Jing, Y . Huang, Y . Shi, M. Ye, S. Qiao, Y . Wang, Y . Guo, D. Feng, and D. Shen, Large Band Splitting ing-Wave Altermagnet CrSb, Phys. Rev. Lett.133, 206401 (2024)

  21. [28]

    Zhang, M

    W. Zhang, M. B. Jungfleisch, W. Jiang, J. E. Pearson, A. Hoff- mann, F. Freimuth, and Y . Mokrousov, Spin hall effects in metallic antiferromagnets, Phys. Rev. Lett.113, 196602 (2014)

  22. [29]

    J. Zhou, J. Qiao, A. Bournel, and W. Zhao, Intrinsic spin Hall conductivity of the semimetals MoTe2 and WTe2, Phys. Rev. B 99, 060408 (2019)

  23. [30]

    C.-C. Wei, E. Lawrence, A. Tran, and H. Ji, Crystal chemistry and design principles of altermagnets, ACS Organic & Inor- ganic Au4, 604 (2024)

  24. [31]

    Z. H. Liu, Y . J. Zhang, G. D. Liu, B. Ding, E. K. Liu, H. M. Jafri, Z. P. Hou, W. H. Wang, X. Q. Ma, and G. H. Wu, Transi- tion from Anomalous Hall Effect to Topological Hall Effect in Hexagonal Non-Collinear Magnet Mn3Ga, Scientific Reports 7, 515 (2017)

  25. [32]

    J. Xu, D. E. Bugaris, Z. L. Xiao, Y . L. Wang, D. Y . Chung, M. G. Kanatzidis, and W. K. Kwok, Reentrant metallic behavior in the Weyl semimetal NbP, Phys. Rev. B96, 115152 (2017)

  26. [33]

    F. F. Tafti, M. S. Torikachvili, R. L. Stillwell, B. Baer, E. Stavrou, S. T. Weir, Y . K. V ohra, H.-Y . Yang, E. F. McDon- nell, S. K. Kushwaha, Q. D. Gibson, R. J. Cava, and J. R. Jef- fries, Tuning the electronic and the crystalline structure of LaBi by pressure: From extre...

  27. [34]

    M. N. Ali, L. M. Schoop, C. Garg, J. M. Lippmann, E. Lara, B. Lotsch, and S. S. P. Parkin, Butterfly magnetore- sistance, quasi-2D Dirac Fermi surface and topological phase transition in ZrSiS, Science Advances2, e1601742 (2016), https://www.science.org/doi/pdf/10.1126/sciadv.1601742

  28. [35]

    Liechtenstein, M

    A. Liechtenstein, M. Katsnelson, V . Antropov, and V . Gubanov, Local spin density functional approach to the theory of ex- change interactions in ferromagnetic metals and alloys, Journal of Magnetism and Magnetic Materials67, 65 (1987)

  29. [36]

    Szilva, Y

    A. Szilva, Y . Kvashnin, E. A. Stepanov, L. Nordström, O. Eriks- son, A. I. Lichtenstein, and M. I. Katsnelson, Quantitative the- ory of magnetic interactions in solids, Rev. Mod. Phys.95, 035004 (2023)

  30. [37]

    Borisov, Y

    V . Borisov, Y . O. Kvashnin, N. Ntallis, D. Thonig, P. Thun- ström, M. Pereiro, A. Bergman, E. Sjöqvist, A. Delin, L. Nord- ström, and O. Eriksson, Heisenberg and anisotropic exchange interactions in magnetic materials with correlated electronic structure and significant spin...

  31. [38]

    M. I. Katsnelson and A. I. Lichtenstein, First-principles calcula- tions of magnetic interactions in correlated systems, Phys. Rev. B61, 8906 (2000)

  32. [40]

    Pavlosiuk, P

    O. Pavlosiuk, P. Swatek, D. Kaczorowski, and P. Wi ´sniewski, Magnetoresistance in LuBi and YBi semimetals due to nearly perfect carrier compensation, Phys. Rev. B97, 235132 (2018)

  33. [41]

    Z. Zhao, X. Guo, W. Xie, X. Li, and Z. Zhu, Large magnetore- sistance, quantum oscillations, and Fermi surface of compen- sated NdBi, Phys. Rev. B111, 115148 (2025)

  34. [42]

    Vashist, R

    A. Vashist, R. K. Gopal, D. Srivastava, M. Karppinen, and Y . Singh, Fermi surface topology and large magnetoresistance in the topological semimetal candidate PrBi, Phys. Rev. B99, 245131 (2019)

  35. [43]

    A. Laha, S. Paone, N. Aryal, and Q. Li, Large non-saturating Nernst thermopower and magnetoresistance in compensated semimetal ScSb, Materials Today Physics57, 101797 (2025)

  36. [44]

    Y . J. Hu, E. I. P. Aulestia, K. F. Tse, C. N. Kuo, J. Y . Zhu, C. S. Lue, K. T. Lai, and S. K. Goh, Extremely large magne- toresistance and the complete determination of the Fermi sur- face topology in the semimetal ScSb, Phys. Rev. B98, 035133 (2018)

  37. [45]

    J. Du, Z. Lou, S. Zhang, Y . Zhou, B. Xu, Q. Chen, T. Yan- qing, S. Chen, H. Chen, Q. Zhu, H. Wang, Y . Jinhu, Q.-S. Wu, O. Yazyev, and M. Fang, Extremely large magnetoresistance in topologically trivial semimetalα-WP 2, Physical Review B97, 10.1103/PhysRevB.97.245101 (2018)

  38. [46]

    K. Wang, D. Graf, L. Li, L. Wang, and C. Petrovic, Anisotropic giant magnetoresistance in NbSb 2, Scientific Reports4, 7328 (2014)

  39. [47]

    Hohenberg and W

    P. Hohenberg and W. Kohn, Inhomogeneous electron gas, Phys. Rev.136, B864 (1964)

  40. [48]

    R. O. Jones and O. Gunnarsson, The density functional formal- ism, its applications and prospects, Rev. Mod. Phys.61, 689 (1989)

  41. [49]

    Blaha, K

    P. Blaha, K. Schwarz, P. Sorantin, and S. Trickey, Full-potential, linearized augmented plane wave programs for crystalline sys- tems, Computer Physics Communications59, 399 (1990)

  42. [50]

    P. E. Blöchl, O. Jepsen, and O. K. Andersen, Improved tetrahe- dron method for Brillouin-zone integrations, Phys. Rev. B49, 16223 (1994)

  43. [51]

    Pizzi, V

    G. Pizzi, V . Vitale, R. Arita, S. Blügel, F. Freimuth, G. Géran- ton, M. Gibertini, D. Gresch, C. Johnson, T. Koretsune, J. Ibañez-Azpiroz, H. Lee, J.-M. Lihm, D. Marchand, A. Mar- razzo, Y . Mokrousov, J. I. Mustafa, Y . Nohara, Y . Nomura, L. Paulatto, S. Poncé, T. Ponweise...

  44. [52]

    Q. Wu, S. Zhang, H.-F. Song, M. Troyer, and A. A. Soluyanov, Wanniertools: An open-source software package for novel topological materials, Computer Physics Communications224, 405 (2018)

  45. [53]

    M. P. L. Sancho, J. M. L. Sancho, J. M. L. Sancho, and J. Ru- bio, Highly convergent schemes for the calculation of bulk and surface green functions, Journal of Physics F: Metal Physics15, 851 (1985)

  46. [54]

    X. Wang, J. R. Yates, I. Souza, and D. Vanderbilt, Ab initio calculation of the anomalous hall conductivity by wannier in- terpolation, Phys. Rev. B74, 195118 (2006)

  47. [55]

    Methfessel, M

    M. Methfessel, M. van Schilfgaarde, and R. A. Casali, A full- potential lmto method based on smooth hankel functions, in Electronic Structure and Physical Properies of Solids, edited by H. Dreyssé (Springer Berlin Heidelberg, Berlin, Heidelberg,

  48. [56]

    J. M. Wills and B. R. Cooper, Synthesis of band and model Hamiltonian theory for hybridizing cerium systems, Phys. Rev. B36, 3809 (1987)

  49. [57]

    J. M. Wills, O. Eriksson, M. Alouni, and D. L. Price,Electronic Structure and Physical Properties of Solids: The Uses of the LMTO Method(Springer-Verlag, Berlin, 2000). 13

  50. [58]

    Kargeti, A

    K. Kargeti, A. Sen, and S. K. Panda, Strain-induced electronic and magnetic transition in theS= 3 2 antiferromagnetic spin chain compound LaCrS3, Phys. Rev. B109, 035125 (2024)

  51. [59]

    Kargeti, B

    K. Kargeti, B. Mallick, V . Borisov, S. S. Ali, J. Hellsvik, O. Eriksson, and S. K. Panda, Charge-state dependent spin-orbit coupling and quantum phase transitions in Ir-Ru oxides, Phys. Rev. B111, 195148 (2025)

  52. [60]

    Hellsvik, D

    J. Hellsvik, D. Thonig, K. Modin, D. Iu¸ san, A. Bergman, O. Eriksson, L. Bergqvist, and A. Delin, General method for atomistic spin-lattice dynamics with first-principles accuracy, Phys. Rev. B99, 104302 (2019)

  53. [61]

    J. H. Mentink, M. V . Tretyakov, A. Fasolino, M. I. Katsnelson, and T. Rasing, Stable and fast semi-implicit integration of the stochastic landau–lifshitz equation, Journal of Physics: Con- densed Matter22, 176001 (2010)

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