REVIEW 5 minor 56 references
Structure and thermodynamic stability of $\beta$-Ga$_2$O$_3$ surfaces
T0 review · 0 major / 5 minor · reviewed 2026-07-31 · grok-4.5
Pith's one-line read Stoichiometric β-Ga₂O₃ surfaces stay lowest-energy across ordinary growth conditions; Ga adlayers appear only when oxygen is scarce.
desk verdict Solid, useful unification of β-Ga2O3 low-index surface thermodynamics; claim holds inside a clearly scoped bulk-truncated model, with the main limit being reconstructions left out of scope. read the letter →
The pith
A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.
The reading
What carries the argument
Ab initio surface free energy γ(T, p_O) from symmetric bulk-truncated slabs, with Ga and O chemical potentials linked by bulk equilibrium, plus a linear coordination model that expresses γ from the areal densities of under-coordinated tetrahedral Ga, octahedral Ga, and oxygen.
What would settle it
Surface-sensitive growth or spectroscopy experiments that detect a Ga adlayer (or its absence) on (100) or (−201) β-Ga₂O₃ precisely when the oxygen chemical potential crosses roughly −2.5 eV would confirm or refute the predicted transition.
Extended reading notes
Core claim
Stoichiometric terminations of the low-index β-Ga₂O₃ surfaces are thermodynamically preferred over nearly the entire oxygen-chemical-potential range relevant to bulk stability; stable Ga-rich terminations resembling Ga adlayers form on (100) and (−201) only under highly reducing conditions (Δμ_O < −2.5 eV), while O-rich terminations appear only under strongly oxidizing conditions.
Load-bearing premise
The stability ranking rests on bulk-truncated slab cuts alone; larger reconstructions or adsorbate-covered surfaces are left out and could lower non-stoichiometric energies inside the normal growth window.
Editorial extensions
If this is right
- Under ordinary MOVPE or melt-growth oxygen pressures, growers should expect stoichiometric (100), (−201), and (001) faces rather than reconstructed non-stoichiometric ones.
- Highly reducing growth recipes that deliberately enter the Ga-adlayer regime on (100) can lower step-edge barriers and favor step-flow morphology.
- Wulff shapes remain (100)-dominated (~42 % area) across the chemical-potential window, with (11−1), (001), and (−201) sharing most of the rest.
- The coordination model supplies a quick filter for ranking higher-index stoichiometric orientations before full DFT.
- Hybrid and semi-local functionals give the same energetic order, so cheaper PBEsol rankings are sufficient for morphology work.
Reading between the lines
- If intentional Ga-adlayer growth on (100) proves controllable, the same reducing window may be usable on (−201) substrates to engineer similar step-flow behavior.
- Because under-coordinated tetrahedral Ga is strongly penalizing, any future reconstruction search should prioritize motifs that restore fourfold Ga2 coordination.
- The small vibrational corrections suggest that finite-temperature morphology maps for this oxide can often omit phonons unless two terminations lie within ~0.1 J/m².
Signed reviews
Editorial analysis
A structured set of objections, weighed in public.
Referee Report
Summary. This manuscript presents a systematic DFT study of all symmetrically inequivalent low-index surfaces of monoclinic β-Ga₂O₃—(010), (100), (001), (¯201), (110), (111), and (11¯1)—using PBEsol and PBE0(0.26) in FHI-aims. Surface free energies are obtained from standard ab initio thermodynamics (Eqs. 1–7), with optional harmonic vibrational corrections for stoichiometric terminations (Eq. 4). The authors report a consistent energetic ordering across functionals, with (100) lowest (~0.6 J/m²) and (010)/(110) highest (~1.6–1.7 J/m²), vibrations below 0.2 J/m² up to 1000 K that do not reorder surfaces, and a linear coordination model (Eq. 8, Table II) linking stability to under-coordinated O and Ga environments. Thermodynamic diagrams (Fig. 4, A.2) show stoichiometric terminations stable over nearly the full bulk-stability window in Δμ_O, with Ga-rich adlayer-like terminations on (100) and (¯201) only under highly reducing conditions and limited O-rich terminations under strong oxidation; Wulff shapes (Fig. 5) are dominated by (100).
Significance. The work fills a clear gap by treating all low-index orientations of β-Ga₂O₃ on equal footing with both semi-local and hybrid functionals, vibrational free energies, and full chemical-potential dependence. The consistent ordering with literature (Table I), the explicit prediction of Ga-adlayer-like terminations under reducing conditions that aligns with cited MOVPE observations, and the openly archived NOMAD data set are concrete strengths. The coordination model, while secondary and fitted, offers a transparent structural rationale that could guide higher-index screening. Within the stated scope of bulk-truncated terminations, the results provide a useful reference for growth and substrate selection in power electronics.
minor comments (5)
- [Sec. IV C / Fig. 4] In Sec. IV C and Fig. 4 the O-rich transition is written once as “ΔΔμ_O > −0.5 eV”; this is a typographical slip for Δμ_O.
- [Table I] Table I header lists (201) without the overbar used elsewhere for (¯201); the same orientation should be labeled consistently.
- [Appendix Fig. A.1] Fig. A.1 atom-index plots would be easier to read if the surface-normal Δz panels used a common vertical scale or if the most displaced atoms were annotated.
- [Sec. IV A, Eq. 8] The coordination model (Eq. 8) is fitted only to stoichiometric terminations; a brief remark on whether the same coefficients remain meaningful for the non-stoichiometric cases in Fig. A.2 would clarify its intended range of use.
- [Sec. III] A short statement of slab thickness (or number of formula units) for each orientation would help readers assess residual finite-size effects beyond the force and vacuum criteria already given.
Circularity Check
No load-bearing circularity: main surface free energies and thermodynamic ordering are independent DFT results; only a secondary coordination fit mildly renames in-sample residuals as predictions.
-
fitted input called prediction
[Sec. IV A, Eq. 8 and Table II; also Summary]
"Fitting this model to our DFT-calculated surface energies yield the parameters displayed in Table II, indicating that the errors of the predicted surface energies are below 10 % for all stoichiometric terminations. ... This model successfully predicts surface energies within 10 % accuracy for all stoichiometric terminations and could serve as a qualitatively predictive tool for higher-order surface orientations."
The linear coefficients are fit to the full set of stoichiometric DFT surface energies already computed; reporting the in-sample residuals as “predicted” surface energies is tautological for those terminations. The step is minor and non-load-bearing: the model is not used to generate Fig. 4, the Ga-adlayer claim, or the Wulff shapes.
full rationale
The central claims—stoichiometric surface energies, their ordering across PBEsol/PBE0, vibrational corrections, chemical-potential diagrams, Ga-adlayer-like terminations under O-poor conditions, and Wulff shapes—follow standard ab initio thermodynamics (Eqs. 1–7) from DFT total energies of bulk-truncated slabs referenced to bulk Ga2O3 and O2. Those energies are not normalized or fitted to equal a target stability window; the stoichiometric dominance from roughly Δμ_O ≈ −2.5 to −0.5 eV is an output of comparing computed terminations, not an input. Self-citations (e.g., Schewski et al. with overlapping authors) supply experimental growth context and do not underwrite uniqueness or force the DFT ordering. The only mild circularity is secondary: the coordination model (Eq. 8) is linearly fitted to the same stoichiometric DFT energies it then reports as “predicted” within 10%, and is offered only as a qualitative correlate, not as the source of the thermodynamic diagrams. That does not make the paper’s primary first-principles results circular.
Assumptions & free parameters
free parameters (3)
- PBE0 exact-exchange mixing α =
0.26
- Coordination-model coefficients f_tet_3, f_oct_4, f_oct_5, f_O_2 =
12.76, 5.45, -7.46, 18.61 J/atom
- Experimental O2 binding energy substituted into μ_O =
−5.22 eV
assumptions (6)
- domain assumption Surface free energy from slab Gibbs energy minus chemical-potential reservoir terms for symmetric slabs (Eq. 1–3).
- domain assumption G ≈ E_DFT for slabs and bulk, with optional additive harmonic F_vib only for stoichiometric terminations (Eq. 4).
- domain assumption 2μ_Ga + 3μ_O = g_bulk (equilibrium with bulk Ga2O3).
- domain assumption Stability window bounded by bulk formation enthalpy: (1/3)H_f < Δμ_O < 0, with computed H_f underestimating experiment.
- ad hoc to paper Only bulk-truncated terminations (and verification in larger cells without systematic reconstruction search) represent relevant stable surfaces.
- domain assumption Harmonic phonopy supercells ≥12 Å laterally suffice for surface vibrational free energies up to 1000 K.
Cite this review
Pith. "Pith review of Structure and thermodynamic stability of $\beta$-Ga$_2$O$_3$ surfaces." pith.science (2026). https://pith.science/paper/SU6CWOP5
@misc{pith2026260727424,
author = {Pith},
title = {Pith review of: Structure and thermodynamic stability of $\beta$-Ga$_2$O$_3$ surfaces},
year = {2026},
howpublished = {\url{https://pith.science/paper/SU6CWOP5}},
note = {Machine review of arXiv:2607.27424}
}
abstract
We present a comprehensive first-principles investigation of all symmetrically inequivalent low-index surfaces of $\beta$-Ga$_2$O$_3$, examining their structural properties and thermodynamic stability across experimentally relevant growth conditions. Using density-functional theory with both semi-local (PBEsol) and hybrid (PBE0) functionals, we calculate surface free energies for the (010), (100), (001), ($\bar{2}01$), (110), (111), and ($11\bar{1}$) orientations, including the effects of harmonic vibrational contributions and varying oxygen chemical potentials. We demonstrate that the energetic ordering remains consistent across computational approaches and that the vibrational contributions remain below 0.2 J/m$^2$ up to temperatures of 1000 K. A coordination-based model that correlates surface stability with the density of under-coordinated atoms reveals that under-coordinated oxygen atoms and tetrahedral Ga sites substantially destabilize surfaces, while exposed under-coordinated octahedral Ga atoms serve as indicators of surface stability. Our thermodynamic analysis shows that stoichiometric terminations dominate over nearly the entire range of chemical potentials relevant for $\beta$-Ga$_2$O$_3$ stability, while non-stoichiometric terminations emerge only under extreme reducing or oxidizing conditions. Notably, we predict the formation of stable Ga-rich terminations resembling Ga adlayers for the (100) and ($\bar{2}01$) surfaces under highly reducing conditions.
Figures
Reference graph
Works this paper leans on
-
[1]
A. J. Green, J. Speck, G. Xing, P. Moens, F. Allerstam, K. Gumaelius, T. Neyer, A. Arias-Purdue, V. Mehro- tra, A. Kuramata, K. Sasaki, S. Watanabe, K. Koshi, J. Blevins, O. Bierwagen, S. Krishnamoorthy, K. Leedy, A. R. Arehart, A. T. Neal, S. Mou, S. A. Ringel, A. Kumar, A. Sharma, K. Ghosh, U. Singisetti, W. Li, K. Chabak, K. Liddy, A. Islam, S. Rajan, ...
2022
-
[2]
Higashiwaki and G
M. Higashiwaki and G. H. Jessen, Guest Editorial: The dawn of gallium oxide microelectronics, Appl. Phys. Lett. 112, 060401 (2018)
2018
-
[3]
Higashiwaki and S
M. Higashiwaki and S. Fujita, eds.,Gallium Oxide: Mate- rials Properties, Crystal Growth, and Devices, Springer Series in Materials Science, Vol. 293 (Springer Interna- tional Publishing, Cham, 2020)
2020
-
[4]
S. J. Pearton, J. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, A review of Ga2O3 materi- als, processing, and devices, Appl. Phys. Rev.5, 011301 (2018)
2018
-
[5]
Galazka, R
Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Nau- mann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Gan- schow, and M. Bickermann, Scaling-up of bulkβ-Ga2O3 single crystals by the czochralski method, ECS J. Solid State Sci. Technol.6, Q3007 (2017)
2017
-
[6]
Galazka,β-Ga2O3 for Wide-Bandgap Electronics and Optoelectronics, Semicond
Z. Galazka,β-Ga2O3 for Wide-Bandgap Electronics and Optoelectronics, Semicond. Sci. Technol.33, 113001 (2018)
2018
-
[7]
Bermudez, The structure of low-index surfaces ofβ- Ga2O3, Chemical Physics323, 193 (2006)
V. Bermudez, The structure of low-index surfaces ofβ- Ga2O3, Chemical Physics323, 193 (2006)
2006
-
[8]
S. Mu, M. Wang, H. Peelaers, and C. G. Van de Walle, First-Principles Surface Energies for Monoclinic Ga2O3 and Al 2O3 and Consequences for Cracking of (AlxGa1−x)2O3, APL Materials8, 091105 (2020)
2020
Show all 56 references
-
[9]
Hinuma, T
Y. Hinuma, T. Gake, and F. Oba, Band alignment at sur- faces and heterointerfaces of Al2O3, Ga2O3, In2O3, and related group-III oxide polymorphs: A first-principles study, Phys. Rev. Materials3, 084605 (2019)
2019
-
[10]
Hinuma, T
Y. Hinuma, T. Kamachi, N. Hamamoto, M. Takao, T. Toyao, and K.-i. Shimizu, Surface Oxygen Vacancy Formation Energy Calculations in 34 Orientations of β-Ga2O3 andθ-Al2O3, J. Phys. Chem. C124, 10509 (2020)
2020
-
[11]
E. A. Gonzalez, P. V. Jasen, A. Juan, S. E. Collins, M. A. Baltan´ as, and A. L. Bonivardi, Hydrogen adsorption on β-Ga2O3(100) surface containing oxygen vacancies, Sur- face Science575, 171 (2005)
2005
-
[12]
M. Wang, S. Mu, and C. G. Van De Walle, Surface recon- structions on bare and hydrogenatedβ−Ga2O3 surfaces: Implications for growth, Phys. Rev. Materials7, 064603 (2023)
2023
-
[13]
Anvari, D
R. Anvari, D. Spagnoli, G. Parish, and B. Nener, Density Functional Theory Simulations of Water Adsorption and Activation on the (-201)β-Ga2O3 Surface, Chem. - Eur. J.24, 7445 (2018)
2018
-
[14]
Bertoni, A
I. Bertoni, A. Ugolotti, E. Scalise, and L. Miglio, Surface and volume energies ofα-,β-, andκ-Ga2O3 under epi- taxial strain induced by a sapphire substrate, J. Mater. Chem. C12, 1820 (2024)
2024
-
[15]
S. B. Anooz, R. Gr¨ uneberg, T. Chou, A. Fiedler, K. Irm- scher, C. Wouters, R. Schewski, M. Albrecht, Z. Galazka, W. Miller, J. Schwarzkopf, and A. Popp, Impact of cham- ber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100)β-Ga2...
2020
-
[16]
S. B. Anooz, R. Gr¨ uneberg, C. Wouters, R. Schewski, M. Albrecht, A. Fiedler, K. Irmscher, Z. Galazka, W. Miller, G. Wagner, J. Schwarzkopf, and A. Popp, Step flow growth ofβ-Ga2O3 thin films on vicinal (100)β- Ga2O3 substrates grown by MOVPE, Appl. Phys. Lett. 116, 182106 (2020)
2020
-
[17]
Schewski, K
R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, M. Schmidbauer, S. Bin Anooz, R. Gr¨ uneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. Albrecht, Step-flow growth in homoepitaxy ofβ-Ga2O3 (100)— The influence of the m...
2018
-
[18]
Cheng, M
Z. Cheng, M. Hanke, Z. Galazka, and A. Trampert, Growth mode evolution during (100)-orientedβ-Ga2O3 homoepitaxy, Nanotechnology29, null (2018)
2018
-
[19]
T.-S. Chou, P. Seyidov, S. Bin Anooz, R. Gr¨ uneberg, T. T. V. Tran, K. Irmscher, M. Albrecht, Z. Galazka, J. Schwarzkopf, and A. Popp, Fast homoepitaxial growth of (100)β-Ga 2O3 thin films via MOVPE, AIP Advances 11, 115323 (2021)
2021
-
[20]
T.-S. Chou, J. Rehm, S. Bin Anooz, O. Ernst, A. Akhtar, Z. Galazka, W. Miller, M. Albrecht, P. Seyidov, A. Fiedler, and A. Popp, Exploring miscut angle influence on (100)β-Ga2O3 homoepitaxial films growth: Compar- ing MOVPE growth with MBE approaches, Journal of Applied Physic...
2023
-
[21]
Bhattacharyya, P
A. Bhattacharyya, P. Ranga, S. Roy, J. Ogle, L. Whittaker-Brooks, and S. Krishnamoorthy, Low tem- perature homoepitaxy of (010)β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window, Appl. Phys. Lett.null, null (2020)
2020
-
[22]
G.-X. Qian, R. M. Martin, and D. J. Chadi, First- principles study of the atomic reconstructions and ener- gies of Ga- and As-stabilized GaAs(100) surfaces, Phys. Rev. B38, 7649 (1988)
1988
-
[23]
Rogal, K
J. Rogal, K. Reuter, and M. Scheffler, Thermodynamic stability of PdO surfaces, Phys. Rev. B69, 075421 (2004)
2004
-
[24]
Reuter and M
K. Reuter and M. Scheffler, Composition and structure of the RuO2 (110) surface in an O2 and CO environment: Implications for the catalytic formation of CO2, Phys. Rev. B68, 045407 (2003)
2003
-
[25]
Reuter and M
K. Reuter and M. Scheffler, Composition, structure, and stability of RuO2 (110) as a function of oxygen pressure, Phys. Rev. B65, 035406 (2001)
2001
-
[26]
Rogal and K
J. Rogal and K. Reuter,Ab Initio Atomistic Thermody- namics for Surfaces: A Primer(2007)
2007
-
[27]
K. K. Irikura, Experimental Vibrational Zero-Point En- ergies: Diatomic Molecules, Journal of Physical and Chemical Reference Data36, 389 (2007)
2007
-
[28]
Zhang and W
Y. Zhang and W. Yang, A challenge for density func- tionals: Self-interaction error increases for systems with a noninteger number of electrons, The Journal of Chem- ical Physics109, 2604 (1998). 12
1998
-
[29]
J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized Gradient Approximation Made Simple, Phys. Rev. Lett. 77, 3865 (1996)
1996
-
[30]
Ernzerhof, J
M. Ernzerhof, J. P. Perdew, and K. Burke, Coupling- constant dependence of atomization energies, Int. J. Quantum Chem.64, 285 (1997)
1997
-
[31]
Feller and K
D. Feller and K. A. Peterson, Re-examination of atom- ization energies for the Gaussian-2 set of molecules, The Journal of Chemical Physics110, 8384 (1999)
1999
-
[32]
Stull and H
D. Stull and H. Prophet,JANAF Thermochemical Ta- bles, 2nd ed. (U.S. National Bureau of Standards, Wash- ington, D.C., 1971)
1971
-
[33]
D. R. Lide, ed.,CRC Handbook of Chemistry and Physics (Internet Version 2005)
2005
-
[34]
V. Blum, R. Gehrke, F. Hanke, P. Havu, V. Havu, X. Ren, K. Reuter, and M. Scheffler, Ab initio molecular simulations with numeric atom-centered orbitals, Com- puter Physics Communications180, 2175 (2009)
2009
-
[35]
J. W. Abbott, C. Mera Acosta, A. Akkoush, A. Am- brosetti, V. Atalla, A. Bagrets, J. Behler, D. Berger, H. Bertschi, B. Bieniek, J. Bj¨ ork, V. Blum, S. Bohloul, C. L. Box, N. J. Boyer, D. S. Brambila, G. A. Bram- ley, K. R. Bryenton, M. Camarasa-G´ omez, C. Carbogno, F. Carus...
2026
-
[36]
J. P. Perdew, A. Ruzsinszky, G. I. Csonka, O. A. Vy- drov, G. E. Scuseria, L. A. Constantin, X. Zhou, and K. Burke, Restoring the Density-Gradient Expansion for Exchange in Solids and Surfaces, Phys. Rev. Lett.100, 136406 (2008)
2008
-
[37]
Wouters, C
C. Wouters, C. Sutton, L. M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grund- mann, M. Scheffler, and M. Albrecht, Investigat- ing the ranges of (meta)stable phase formation in ( InxGa1-x)2O3: Impact of the cation coordination, Phys. Rev. Materials...
2020
-
[38]
K. Lion, P. Pavone, and C. Draxl, Elastic stability of Ga2O3: Addressing theβtoαphase transition from first principles, Phys. Rev. Materials6, 013601 (2022)
2022
-
[39]
Adamo and V
C. Adamo and V. Barone, Toward reliable density func- tional methods without adjustable parameters: The PBE0 model, The Journal of Chemical Physics110, 6158 (1999)
1999
-
[40]
Ernzerhof and G
M. Ernzerhof and G. E. Scuseria, Assessment of the Perdew–Burke–Ernzerhof exchange-correlation func- tional, The Journal of Chemical Physics110, 5029 (1999)
1999
-
[41]
De´ ak, M
P. De´ ak, M. Lorke, B. Aradi, and T. Frauenheim, Opti- mized hybrid functionals for defect calculations in semi- conductors, Journal of Applied Physics126, 130901 (2019)
2019
-
[42]
Orita, H
M. Orita, H. Ohta, M. Hirano, and H. Hosono, Deep- ultraviolet transparent conductiveβ-Ga2O3 thin films, Applied Physics Letters77, 4166 (2000)
2000
-
[43]
˚Ahman, G
J. ˚Ahman, G. Svensson, and J. Albertsson, A Reinves- tigation ofβ-Gallium Oxide, Acta Crystallogr C Cryst Struct Commun52, 1336 (1996)
1996
-
[44]
S. P. Ong, W. D. Richards, A. Jain, G. Hautier, M. Kocher, S. Cholia, D. Gunter, V. L. Chevrier, K. A. Persson, and G. Ceder, Python Materials Genomics (py- matgen): A robust, open-source python library for mate- rials analysis, Computational Materials Science68, 314 (2013)
2013
-
[45]
Sun and G
W. Sun and G. Ceder, Efficient creation and convergence of surface slabs, Surf. Sci.617, 53 (2013)
2013
-
[46]
Togo, First-principles Phonon Calculations with Phonopy and Phono3py, J
A. Togo, First-principles Phonon Calculations with Phonopy and Phono3py, J. Phys. Soc. Jpn.92, 012001 (2023)
2023
-
[47]
A. Togo, L. Chaput, T. Tadano, and I. Tanaka, Imple- mentation strategies in phonopy and phono3py, J. Phys.: Condens. Matter35, 353001 (2023)
2023
-
[48]
De´ ak, Q
P. De´ ak, Q. Duy Ho, F. Seemann, B. Aradi, M. Lorke, and T. Frauenheim, Choosing the Correct Hybrid for Defect Calculations: A Case Study on Intrinsic Carrier Trapping inβ-Ga2O3, Phys. Rev. B95, 075208 (2017)
2017
-
[49]
Draxl and M
C. Draxl and M. Scheffler, NOMAD: The F AIR concept for big data-driven materials science, MRS Bull.43, 676 (2018)
2018
-
[50]
Draxl and M
C. Draxl and M. Scheffler, The NOMAD laboratory: From data sharing to artificial intelligence, J. Phys. Mater.2, 036001 (2019)
2019
-
[51]
Scheidgen, L
M. Scheidgen, L. Himanen, A. N. Ladines, D. Sikter, M. Nakhaee, ´A. Fekete, T. Chang, A. Golparvar, J. A. M´ arquez, S. Brockhauser, S. Br¨ uckner, L. M. Ghir- 13 inghelli, F. Dietrich, D. Lehmberg, T. Denell, A. Al- bino, H. N¨ asstr¨ om, S. Shabih, F. Dobener, M. K¨ uhbach, ...
2023
-
[52]
Schewski, K
R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, M. Schmidbauer, S. Bin Anooz, R. Gr¨ uneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. Albrecht, Step-flow growth in homoepitaxy ofβ-Ga 2 O 3 (100)— The influence of th...
2019
-
[53]
L. Wang, F. Zhou, Y. S. Meng, and G. Ceder, First- principles study of surface properties of LiFePO4 : Sur- face energy, structure, Wulff shape, and surface redox potential, Phys. Rev. B76, 165435 (2007)
2007
-
[54]
Sterrer and H.-J
M. Sterrer and H.-J. Freund, Properties of Oxide Surfaces, inSurface and Interface Science, edited by K. Wandelt (Wiley, 2013) 1st ed., pp. 229–278
2013
-
[55]
Wulff, XXV
G. Wulff, XXV. Zur Frage der Geschwindigkeit des Wach- sthums und der Aufl¨ osung der Krystallfl¨ achen, Z. F¨ ur Krist. - Cryst. Mater.34, 449 (1901)
1901
-
[56]
J. M. Rahm and P. Erhart, WulffPack: A Python package for Wulff constructions, J. Open Source Softw.5, 1944 (2020)
1944
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