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REVIEW 4 major objections 5 minor 34 references

Wafer-scale monolithic integration of Ce:YIG films and magneto-optical isolators on silicon

T0 review · 4 major / 5 minor · reviewed 2026-08-14 · deepseek-v4-flash

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Pith's one-line read Cerium-substituted yttrium iron garnet films can now be grown uniformly across a full 4-inch silicon wafer and used to make working magneto-optical isolators.

desk verdict A real wafer-scale fabrication advance whose headline material numbers are not traceable to a described measurement. read the letter →

arxiv 2608.09003 v1 pith:MWJMBM6D submitted 2026-08-10 physics.optics cond-mat.mtrl-sci

Tianchi Zhang , Yucong Yang , Weihao Yang , JieJun Su , Tianyi Ma , Xuan Zhao , Junxian Wang , Di Wu
show 4 more authors
Zhenyuan Ren Yi Shuai Zixuan Wei Lei Bi
This is my paper · ORCID
classification physics.opticscond-mat.mtrl-sci PACS 78.20.Ls75.70.Ak42.82.-m81.15.Cd
keywords Ce:YIGmagneto-opticalisolatorwafer-scaleintegrationmagnetronsputteringmagneto-ellipsometrysiliconphotonicsringresonatornonreciprocal
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper is trying to establish that the long-standing size limit on magneto-optical garnet integration with silicon, which previously held Ce:YIG films to millimeter-scale areas, can be broken by a confocal sputtering process. A sympathetic reader would care because optical isolators are a missing component in dense photonic circuits, and wafer-scale growth is what would let them be batch-fabricated alongside silicon waveguides. The paper reports a 4-inch wafer of Ce:YIG on a YIG seed layer with thickness uniformity of 3.5%, Faraday rotation of $2318\pm102$ deg/cm, propagation loss of $80\pm11$ dB/cm, and six ring-resonator isolators with isolation between 18.6 and 31 dB. It also introduces a non-destructive wafer-scale magneto-ellipsometer that maps the film thickness, optical constants, and magneto-optical permittivity tensor at 54 points across the wafer.

What carries the argument

The central object is the Ce:YIG/YIG bilayer on silicon: the YIG seed layer provides a crystallized template so the Ce:YIG layer can form the garnet phase after rapid thermal annealing, while the confocal geometry of the radio-frequency magnetron sputtering with the wafer rotating at 30 rpm is what distributes material uniformly over the 4-inch area. The characterization machinery is a custom-built wafer-scale magneto-ellipsometer that places permanent magnets over the focused spot, applies a transverse magnetic field of up to 578 Oe under Voigt geometry, and records Mueller-matrix spectra at 54 points. Those spectra are fitted with a Tauc-Lorentz dispersion model plus a transfer-matrix calculation to extract the diagonal ($\varepsilon_1$) and off-diagonal ($\varepsilon_2$) elements of the permittivity tensor. This two-part mechanism—uniform deposition plus non-destructive full-tensor mapping—is what lets the paper claim both fabrication and metrology at wafer scale.

What would settle it

Measure the off-diagonal permittivity at the same 54 wafer positions under applied fields of 578 Oe and 1200 Oe, or map the local magnetic hysteresis at each spot. If the extracted permittivity values change systematically when the field is raised, or if any region has an in-plane saturation field above 578 Oe, the reported 13% wafer-scale variation would need to be reinterpreted as partial-magnetization artifact rather than pure material nonuniformity.

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Extended reading notes

Core claim

The central claim is that a two-step deposition process—a roughly 60 nm YIG seed layer crystallized at 850 °C followed by roughly 120 nm Ce:YIG crystallized at 950 °C under controlled oxygen—produces uniform, polycrystalline, predominantly garnet-phase Ce:YIG across an entire 4-inch silicon wafer. At 1550 nm the film shows a Faraday rotation of $2318\pm102$ deg/cm, propagation loss of $80\pm11$ dB/cm, saturation magnetization of $143.5\pm1.5$ emu/cm³, refractive index $2.258\pm0.007$, and an off-diagonal permittivity tensor element with real part about $0.0046$ and a wafer-scale variation near 13%. Six SiN ring-resonator isolators fabricated from center to wafer edge show isolation ratios from 18.6 to 31 dB and insertion losses from 2.8 to 4.3 dB. The paper further claims that a custom magneto-ellipsometer using a transverse magnetic field and transfer-matrix fitting can characterize the full permittivity tensor nondestructively over the whole wafer, and that together these results constitute the first wafer-scale monolithic integration of magneto-optical garnet films and nonreciprocal devices on silicon.

Load-bearing premise

The load-bearing premise is that the 578 Oe transverse field applied at every measured spot saturates the in-plane magnetization of the film at all 54 points, so the variation seen in the magneto-optical map is real material nonuniformity rather than the result of some spots being only partially magnetized.

Editorial extensions

If this is right

  • Optical isolators and other nonreciprocal devices can be made across a whole silicon photonics wafer rather than as individual millimeter-scale chips, removing a major bottleneck for high-density photonic integration.
  • The non-destructive magneto-ellipsometer gives a metrology path for production: thickness, optical constants, and magneto-optical constants can be mapped without cleaving or damaging the wafer.
  • With wafer-scale Ce:YIG, arrays of isolators and circulators for dense wavelength-division-multiplexed transceivers, magneto-optical in-memory computing networks, and integrated magnetometers become manufacturable.
  • The reported uniformity numbers—3.5% thickness and sub-0.3% refractive-index variation—provide concrete specifications that a silicon foundry could design around for magneto-optical process integration.
  • The main remaining materials path is clear: suppressing the observed CeO2 precipitates and grain-boundary defects in the Ce:YIG layer should raise Faraday rotation and lower propagation loss further.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Beyond the paper: because confocal sputtering is composition-agnostic, the same seed-layer and annealing recipe should transfer to other garnet families such as Bi:YIG or Ce:TbIG, where wafer-scale uniformity would open different wavelength windows for nonreciprocal devices.
  • Beyond the paper: the 13% wafer-scale variation in the off-diagonal permittivity element predicts a spread in device isolation; one could test this by computing each isolator's expected isolation from the local Faraday-rotation map and comparing with the measured 18.6 to 31 dB range.
  • Beyond the paper: the saturation assumption behind the wafer map is directly testable by sweeping the applied field above 578 Oe at a subset of the 54 points; if the extracted off-diagonal permittivity continues to change with field, the reported map is partly a magnetization map rather than a pure material-uniformity map.
  • Beyond the paper: the CeO2 precipitates with average diameter 10.8 nm are a plausible physical origin of a substantial part of the 80 dB/cm loss, so compositional adjustment or oxygen-partial-pressure tuning that removes them should move the film's figures of merit toward the bonded-epitaxial benchmarks cited in the paper.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 5 minor

Summary. The manuscript reports the growth of 4-inch wafer-scale Ce:YIG thin films on silicon by confocal RF magnetron sputtering and demonstrates wafer-scale non-destructive magneto-ellipsometry characterization, along with six ring-resonator magneto-optical isolators fabricated across the wafer. The paper claims a Faraday rotation of 2318±102 deg/cm, a propagation loss of 80±11 dB/cm, thickness uniformity of 3.5%, and isolator isolation ratios of 18.6–31 dB. The structural, compositional, and magnetic characterization (XRD, EBSD, XPS, VSM, STEM) supports the uniformity of the garnet phase and magnetic properties. However, the headline material parameters are presented without a traceable extraction procedure, and several reported uniformity metrics are mutually inconsistent.

Significance. If the claimed material parameters and wafer-scale uniformity are substantiated, this would be a notable advance in monolithic integration of magneto-optical garnets on silicon, relevant to nonreciprocal photonic integrated circuits. The custom magneto-ellipsometry mapping approach and the demonstration of multiple isolators across a 4-inch wafer are valuable contributions. However, the central quantitative claims—the Faraday rotation and propagation loss of the film—are not currently verifiable from the reported evidence, because the conversion from measurements to these values is not documented. The fabrication and device demonstrations themselves are plausible, but the material-level headline numbers need a rigorous, described extraction and uncertainty analysis before the paper can be accepted.

major comments (4)
  1. [Section 3 (after Figure 5) and Abstract] The headline values θ_F = 2318±102 deg/cm and α = 80±11 dB/cm are introduced only by the phrase 'After the calculations' with no model, equations, or parameter list. No formula connects the measured ellipsometric Mueller-matrix elements or the ring-resonator transmission spectra to these material parameters. If the values are derived from the isolator spectra, the extraction depends on coupling coefficients, round-trip loss, and the nonreciprocal phase shift model, none of which is specified. If they derive from the ellipsometry data, the conversion from ε2 to θ_F and from k to α is omitted. Without this derivation and a propagation-of-uncertainty budget, the abstract's 'strong Faraday effect' and 'low propagation loss' claims are not verifiable.
  2. [Section 3, Figure 4 and α from k] The reported α = 80±11 dB/cm is not reconciled with the measured extinction coefficient. The maximum k = 1.63×10⁻⁴ at 1550 nm corresponds to α ≈ 57 dB/cm via α = 4πk/λ, and the difference is attributed to 'grain-boundary precipitates and CeO₂ precipitates' without any quantitative estimate. The paper also states that at 1550 nm 'the reliability of the fitting results was relatively low, as the measurement has approached the limit of the instrument's accuracy.' These statements together leave the propagation-loss claim without quantitative support. The authors should either provide a measured loss value with an uncertainty that accounts for the instrument limit, or report α only as an upper bound derived from k.
  3. [Sections 2 and 3, magneto-ellipsometry saturation assumption] The magneto-ellipsometry applies a transverse magnetic field of up to 578 Oe at each spot and assumes this saturates the in-plane magnetization at all 54 measurement points. The VSM data in Section 2 give an in-plane saturation field of approximately 525 Oe, so the applied field margin is only about 10%. If any location on the wafer has a slightly higher local saturation field—due to thickness or composition variation—the extracted off-diagonal permittivity and its reported 13% variation would reflect partial magnetization rather than true material nonuniformity. The authors should demonstrate saturation at each mapped position (e.g., by measuring ε2 as a function of applied field at representative points) or use a field safely above the worst-case saturation field.
  4. [Conclusion vs. Section 3, uniformity metrics] The uniformity numbers reported in the conclusion are internally inconsistent with those in the Results. The conclusion states 'optical constant variation of 2.8%' and 'off-diagonal permittivity element variation of 13%,' but Section 3 reports refractive-index variation of 0.25–0.30% and off-diagonal element variation of 'around 13%' in one place and 'approximately 9%' in another (Figures 4C–4F and accompanying text). These discrepancies need to be resolved, because the wafer-uniformity claim is one of the paper's main selling points. Please report a single, well-defined uniformity metric (e.g., standard deviation divided by mean) for each property, with the number of points and the definition stated.
minor comments (5)
  1. [Throughout] The manuscript contains numerous typographical errors, including 'opticla' (Introduction), 'geomery' (Introduction), 'metrit' (Introduction), 'Muller' for Mueller, 'demosntrate' (Conclusion), 'homogenity' (Conclusion), and 'arised' (Section 3). These should be corrected.
  2. [Equations (1)–(9)] The equations are not formatted correctly and are difficult to read; several subscript/superscript characters are garbled. In particular, Eq. (4) and Eq. (9) are not legible in the provided text. Please ensure all equations are typeset properly and define every symbol (e.g., Amp, E0, Br, Eg in Eq. (4)).
  3. [Figure 5] The transmission spectra of the six isolators (Figures 5D–5I) are shown without error bars or a statement of measurement repeatability, which is important given the claim of isolation ratios spanning 18.6–31 dB. Please add measurement uncertainties or specify the spectral resolution and averaging.
  4. [Section 2 (XPS)] The paper states the Ce3+ content is 'around 20%' but does not state the nominal Ce content of the target or the expected Ce:YIG stoichiometry. Please specify the target composition and how the measured Ce3+ fraction relates to it.
  5. [Section 2 (VSM)] The in-plane and out-of-plane hysteresis loops are measured 'at different positions on the wafer,' but the number of positions and their radial coordinates are not given. Please provide this information to support the uniformity claim.

Circularity Check

0 steps flagged · score 0.0 of 10

No exhibited circularity: the reported material values are model-fitted or device-derived results, not predictions that reduce to their own inputs by the paper's stated equations.

full rationale

The paper reports wafer-scale Ce:YIG films and characterizes them by XRD, EBSD, XPS, VSM, magneto-ellipsometry with transfer-matrix fitting, and ring-resonator isolators. The claimed Faraday rotation (2318±102 deg/cm) and propagation loss (80±11 dB/cm) are presented as extracted results, not as predictions from a first-principles model. The only potentially circular-looking sentence is 'After the calculations, the Faraday rotation ... was between 2216 deg/cm and 2420 deg/cm, and the optical loss ... between 69 dB/cm and 91 dB/cm,' which follows the isolator transmission spectra. If these values were obtained from the same ring-resonator devices, then presenting them as independently demonstrated material properties would be an internal-consistency issue, but the paper does not state the conversion formula or identify the data source, so no specific reduction (e.g., Eq. X = Eq. Y, or a fitted parameter renamed as a prediction) can be exhibited under the hard rules. The paper also explicitly flags the low reliability of extinction-coefficient fits at 1550 nm and says 'Additional experimental verification was therefore needed,' which is a reproducibility or correctness concern rather than circularity. No load-bearing self-citations, imported uniqueness theorems, or ansatz-by-citation steps appear; the cited prior work provides context and independent benchmarks (e.g., refs. 19-20, 31). The central fabrication result—wafer-scale integration with acceptable uniformity and working isolators—is supported by direct structural, magnetic, and transmission data and is not circular.

Assumptions & free parameters 4 free parameters · 5 assumptions · 0 invented entities

The central claims depend on standard multilayer optics (transfer-matrix and Kramers-Kronig), a Tauc-Lorentz parameterization of the garnet optical constants, the linear magneto-optical tensor form, and the assumption that radial sampling represents full-wafer uniformity. The Tauc-Lorentz and thickness parameters are fitted to ellipsometry; the off-diagonal permittivity is fitted to magneto-ellipsometry data. No new entities are introduced.

free parameters (4)
  • YIG Tauc-Lorentz parameters (Amp, E0, Br, Eg) = not reported in text
    Fitted to spectroscopic ellipsometry data to obtain YIG thickness and optical constants; explicitly a fit, not a prediction.
  • Ce:YIG Tauc-Lorentz parameters (Amp, E0, Br, Eg) = not reported in text
    Fitted to spectroscopic ellipsometry data; n=2.258±0.007 and the k maps are outputs of this fit.
  • YIG and Ce:YIG layer thicknesses = YIG ~60 nm, Ce:YIG ~120 nm (from fit)
    Ellipsometric fit gives thickness maps with 3.3-3.5% variation; the nominal values are also described as deposited.
  • Off-diagonal permittivity element ε2 real at 1550 nm = ~0.0046 with ~13% variation
    Obtained by transfer-matrix fitting of magneto-ellipsometry Mueller matrix data; variation partly attributed to noise.
assumptions (5)
  • domain assumption The Tauc-Lorentz model with four parameters captures the diagonal permittivity of YIG and Ce:YIG over 210-1690 nm.
    Used in Section 2 to fit ellipsometry data; if the model is wrong, thickness and optical constant maps are wrong.
  • domain assumption The magneto-optical permittivity tensor has the form of Eq. (1) with ε3 = ε1 for linear magneto-optical effects.
    Stated in Section 2; this is the standard linear MO response under Voigt geometry.
  • standard math The transfer-matrix method and Kramers-Kronig relation correctly relate reflection Mueller matrices to the permittivity tensor.
    Used in Section 2 to extract off-diagonal elements; relies on standard multilayer optics.
  • domain assumption A transverse field of up to 578 Oe saturates the in-plane magnetization at all 54 measurement points.
    VSM gives in-plane saturation field ~525 Oe; the ellipsometer field is up to 578 Oe, close to saturation, and is assumed sufficient everywhere.
  • domain assumption Radial sampling along the wafer represents the full wafer uniformity.
    The paper states radial sampling can 'serve as a representative approximation' due to rotational deposition; this underpins the uniformity claims.

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Cite this review

Pith. "Pith review of Wafer-scale monolithic integration of Ce:YIG films and magneto-optical isolators on silicon." pith.science (2026). https://pith.science/paper/MWJMBM6D

@misc{pith2026260809003,
  author       = {Pith},
  title        = {Pith review of: Wafer-scale monolithic integration of Ce:YIG films and magneto-optical isolators on silicon},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/MWJMBM6D}},
  note         = {Machine review of arXiv:2608.09003}
}
read the original abstract

Silicon integrated cerium doped yttrium iron garnet (Ce:YIG) thin films are promising candidates for integrated nonreciprocal photonic devices, cryogenic photonic modulators and optical computing applications. However, previously reported Ce:YIG thin film on silicon is limited to milimeter sizes. Wafer-scale integration and non-destructive characterization of high quality Ce:YIG thin films on silicon has been elusive. Here, we report growth of 4-inch wafer-scale Ce:YIG thin films on silicon substrates by radio-frequency magnetron sputtering. Strong Faraday effect of 2318 deg/cm, low propagation loss of 80 dB/cm and excellent thickness uniformity of 3.5% is demonstrated across the 4-inch silicon wafer. Furthermore, a custom designed wafer-scale, non-destructive magneto-ellipsometry was established to characterize the film thickness, optical constants and magneto-optical constants across the wafer. Wafer-scale integration of ring resonator type magneto-optical isolators are also demonstrated. Our work demonstrates a step forward toward wafer-scale heterogeneous integration and characterization of magneto-optical thin films on silicon, providing material candidates for non-reciprocal photonic device arrays, magneto-optical in-memory computing networks and integrated magneto-optic magnetometers.

Figures

Figures reproduced from arXiv: 2608.09003 by the authors.

Figure 1
Figure 1. (a) Schematic diagram of sputtering deposition of 4-inch silicon-based MO thin films. (b) Comparison of substrate sizes used for the Ce:YIG thin-films growth. (c) XRD patterns of the Ce:YIG thin film on the wafer from the center to the edge. (d) Lattice Constants of CeYIG Films at Different Radial Positions on the Wafer (e) and (f) STEM images of the Ce:YIG thin film and the Fourier transform pattern of the lattice … view at source ↗
Figure 2
Figure 2. (a) High resolution XPS spectra of Ce 3d of Ce:YIG at the center of the wafer. (b) Ce3+ content at different positions along the wafer radius. (c) EBSD map at the center of the wafer. (d) Crystallization fraction at different positions along the wafer radius. Room temperature (e) in-plane and (f) out of plane magnetic hysteresis of Ce:YIG films measured at different positions on the wafer [PITH_FULL_IMAGE:figures/f… view at source ↗
Figure 3
Figure 3. (a) The scanning trajectory of the magneto-ellipsometry measurement. (b) Measured thickness distribution of YIGand (c) Measured thickness distribution of Ce:YIG To measure the thickness of wafer-scale YIG and Ce:YIG thin films, an automatic scanning program was set up across the whole wafer. Figure 3A showed the scanning trajectory of the ellipsometery measurement across the wafer. The squares in the schematic repre… view at source ↗
Figures from the paper (1 more)
Figure 4
Figure 4. Figure 4: (a) The spectra of the refractive index (n) and extinction coefficient (k) of YIG and CeYIG at the center of the wafer. (b) The spectra of the real and imaginary parts of the off-diagonal elements [PITH_FULL_IMAGE:figures/full_fig_p010_4.png]

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Works this paper leans on

34 extracted references · 29 canonical work pages

  1. [2]

    Nonreciprocal optical routing via a magneto-optical phased array on silicon,

    W. Yan et al., "Nonreciprocal optical routing via a magneto-optical phased array on silicon," Photon. Res., vol. 13, no. 9, pp. 2432-2441, 2025/09/01 2025, doi: 10.1364/PRJ.547240

    work page doi:10.1364/prj.547240 2025

  2. [3]

    Integrated non-reciprocal magneto-optics with ultra-high endurance for photonic in-memory computing,

    P. Pintus et al., "Integrated non-reciprocal magneto-optics with ultra-high endurance for photonic in-memory computing," Nature Photonics, vol. 19, no. 1, pp. 54-62, 2025/01/01 2025, doi: 10.1038/s41566-024-01549-1

    work page doi:10.1038/s41566-024-01549-1 2025

  3. [4]

    An integrated magneto-optic modulator for cryogenic applications,

    P. Pintus et al., "An integrated magneto-optic modulator for cryogenic applications," Nature Electronics, vol. 5, no. 9, pp. 604-610, 2022/09/01 2022, doi: 10.1038/s41928- 022-00823-w

    doi:10.1038/s41928- 2022

  4. [5]

    Bidirectional conversion between microwave and light via ferromagnetic magnons,

    R. Hisatomi et al., "Bidirectional conversion between microwave and light via ferromagnetic magnons," Physical Review B, vol. 93, no. 17, p. 174427, 05/27/ 2016, doi: 10.1103/PhysRevB.93.174427

    doi:10.1103/physrevb.93.174427 2016

  5. [6]

    Ultra-broadband magneto-optical isolators and circulators on a silicon nitride photonics platform,

    W. Yan et al., "Ultra-broadband magneto-optical isolators and circulators on a silicon nitride photonics platform," Optica, vol. 11, no. 3, pp. 376-384, 2024/03/20 2024, doi: 10.1364/OPTICA.506366

    work page doi:10.1364/optica.506366 2024

  6. [7]

    Waveguide-integrated high-performance magneto-optical isolators and circulators on silicon nitride platforms,

    W. Yan et al., "Waveguide-integrated high-performance magneto-optical isolators and circulators on silicon nitride platforms," Optica, vol. 7, no. 11, 2020, doi: 10.1364/optica.408458. 15

    work page doi:10.1364/optica.408458 2020

  7. [8]

    Enhanced magneto-optical effect in Y1.5Ce1.5Fe5O12 thin films deposited on silicon by pulsed laser deposition,

    Y. Zhang et al., "Enhanced magneto-optical effect in Y1.5Ce1.5Fe5O12 thin films deposited on silicon by pulsed laser deposition," Journal of Alloys and Compounds, vol. 703, pp. 591-599, 2017/05/05/ 2017, doi: https://doi.org/10.1016/j.jallcom.2017.01.315

    work page doi:10.1016/j.jallcom.2017.01.315 2017

  8. [9]

    Monolithic magneto-optical oxide thin films for on-chip optical isolation,

    Q. Du, T. Fakhrul, Y. Zhang, J. Hu, and C. A. Ross, "Monolithic magneto-optical oxide thin films for on-chip optical isolation," MRS Bulletin, vol. 43, no. 6, pp. 413-418, 2018, doi: 10.1557/mrs.2018.127

    work page doi:10.1557/mrs.2018.127 2018

Show all 34 references
  1. [10]

    Thickness-dependent magnetooptical properties of ion beam sputtered polycrystalline Ce1Y2Fe5O12 films,

    Y. Yoshihara et al., "Thickness-dependent magnetooptical properties of ion beam sputtered polycrystalline Ce1Y2Fe5O12 films," Optical Materials, vol. 133, p. 112967, 2022/11/01/ 2022, doi: https://doi.org/10.1016/j.optmat.2022.112967

    2022

  2. [11]

    Ce:YIG/Silicon-on-Insulator waveguide optical isolator realized by adhesive bonding,

    S. Ghosh, S. Keyvavinia, W. Van Roy, T. Mizumoto, G. Roelkens, and R. Baets, "Ce:YIG/Silicon-on-Insulator waveguide optical isolator realized by adhesive bonding," Opt. Express, vol. 20, no. 2, pp. 1839-1848, 2012/01/16 2012, doi: 10.1364/OE.20.001839

    2012 doi

  3. [12]

    Monolithic integration of broadband optical isolators for polarization- diverse silicon photonics,

    Y. Zhang et al., "Monolithic integration of broadband optical isolators for polarization- diverse silicon photonics," Optica, vol. 6, no. 4, pp. 473-478, 2019/04/20 2019, doi: 10.1364/OPTICA.6.000473

    2019 doi

  4. [13]

    Silicon Waveguide Optical Isolator with Directly Bonded Magneto-Optical Garnet,

    Y. Shoji and T. Mizumoto, "Silicon Waveguide Optical Isolator with Directly Bonded Magneto-Optical Garnet," Applied Sciences, vol. 9, no. 3 , p. 609doi: 10.3390/app9030609

    doi

  5. [14]

    Fiber Optic Sensors Based on the Faraday Effect,

    P. Mihailovic and S. Petricevic, "Fiber Optic Sensors Based on the Faraday Effect," Sensors, vol. 21, no. 19, p. 6564doi: 10.3390/s21196564

    doi

  6. [15]

    High-Gyrotropy Seedlayer-Free Ce:TbIG for Monolithic Laser- Matched SOI Optical Isolators,

    K. Srinivasan et al., "High-Gyrotropy Seedlayer-Free Ce:TbIG for Monolithic Laser- Matched SOI Optical Isolators," ACS Photonics, vol. 6, no. 10, pp. 2455-2461, 2019/10/16 2019, doi: 10.1021/acsphotonics.9b00707

    2019 doi

  7. [16]

    Crystallization of high gyrotropy garnets with decreasing thermal processing budgets as analyzed by electron backscatter diffraction,

    K. Srinivasan, N. C. A. Seaton, R. Peng, M. Li, and B. J. H. Stadler, "Crystallization of high gyrotropy garnets with decreasing thermal processing budgets as analyzed by electron backscatter diffraction," Opt. Mater. Express, vol. 13, no. 2, pp. 357-367, 2023/02/01 2023, doi:...

    2023 doi

  8. [17]

    Europium-substituted cerium iron garnet thin films for silicon- integrated nonreciprocal photonic device applications,

    Y. Yang et al., "Europium-substituted cerium iron garnet thin films for silicon- integrated nonreciprocal photonic device applications," APL Materials, vol. 13, no. 5, p. 051109, 2025, doi: 10.1063/5.0256931

    2025 doi

  9. [18]

    MZI optical isolator with Si-wire waveguides by surface-activated direct bonding,

    Y. Shoji, M. Ito, Y. Shirato, and T. Mizumoto, "MZI optical isolator with Si-wire waveguides by surface-activated direct bonding," Opt. Express, vol. 20, no. 16, pp. 18440-18448, 2012/07/30 2012, doi: 10.1364/OE.20.018440

    2012 doi

  10. [19]

    Magneto-optical isolator with silicon waveguides fabricated by direct bonding,

    Y. Shoji, T. Mizumoto, H. Yokoi, I. W. Hsieh, and R. M. Osgood, Jr., "Magneto-optical isolator with silicon waveguides fabricated by direct bonding," Applied Physics Letters, vol. 92, no. 7, p. 071117, 2008, doi: 10.1063/1.2884855

    2008 doi

  11. [20]

    Silicon-based integrated polarization-independent magneto-optical isolator,

    S. Liu, D. Minemura, and Y. Shoji, "Silicon-based integrated polarization-independent magneto-optical isolator," Optica, vol. 10, no. 3, pp. 373-378, 2023/03/20 2023, doi: 10.1364/OPTICA.483017

    2023 doi

  12. [21]

    Ce-substituted yttrium iron garnet films prepared on Gd3Sc2Ga3O12 garnet substrates by sputter epitaxy,

    T. Shintaku, A. Tate, and S. Mino, "Ce-substituted yttrium iron garnet films prepared on Gd3Sc2Ga3O12 garnet substrates by sputter epitaxy," Applied Physics Letters, vol. 71, no. 12, pp. 1640-1642, 1997, doi: 10.1063/1.120003

    1997 doi

  13. [22]

    Ce-substituted YIG films grown by pulsed laser deposition for magneto-optic waveguide devices,

    K. Hyonju, A. M. Grishin, K. V. Rao, S. C. Yu, R. Sbiaa, and H. L. Gall, "Ce-substituted YIG films grown by pulsed laser deposition for magneto-optic waveguide devices," IEEE Transactions on Magnetics, vol. 35, no. 5, pp. 3163-3165, 1999, doi: 10.1109/20.801115

    1999 doi

  14. [23]

    Monolithic integration of chalcogenide glass/iron garnet waveguides and resonators for on-chip nonreciprocal photonic devices,

    B. Lei, H. Juejun, F. D. Gerald, K. Lionel, and C. A. Ross, "Monolithic integration of chalcogenide glass/iron garnet waveguides and resonators for on-chip nonreciprocal photonic devices," in Proc.SPIE, 2011, vol. 7941, p. 794105, doi: 10.1117/12.875184. [Online]. Available: h...

    2011 doi

  15. [24]

    Magneto-optical properties of cerium substituted yttrium iron garnet films with reduced thermal budget for monolithic photonic integrated circuits,

    T. Goto, M. C. Onbaşlı, and C. A. Ross, "Magneto-optical properties of cerium substituted yttrium iron garnet films with reduced thermal budget for monolithic photonic integrated circuits," Opt. Express, vol. 20, no. 27, pp. 28507-28517, 2012/12/17 2012, doi: 10.1364/OE.20.028507

    2012 doi

  16. [25]

    TE-mode magneto-optical isolator based on an asymmetric microring resonator under a unidirectional magnetic field,

    S. Liu, Y. Shoji, and T. Mizumoto, "TE-mode magneto-optical isolator based on an asymmetric microring resonator under a unidirectional magnetic field," Opt. Express, vol. 30, no. 6, pp. 9934-9943, 2022/03/14 2022, doi: 10.1364/OE.454751

    2022 doi

  17. [26]

    Mode-evolution-based TE mode magneto-optical isolator using asymmetric adiabatic tapered waveguides,

    S. Liu, Y. Shoji, and T. Mizumoto, "Mode-evolution-based TE mode magneto-optical isolator using asymmetric adiabatic tapered waveguides," Opt. Express, vol. 29, no. 15, pp. 22838-22846, 2021/07/19 2021, doi: 10.1364/OE.427914

    2021 doi

  18. [27]

    Growth Parameters of Fully Crystallized YIG, Bi:YIG, and Ce:YIG Films With High Faraday Rotations,

    A. D. Block, P. Dulal, B. J. H. Stadler, and N. C. A. Seaton, "Growth Parameters of Fully Crystallized YIG, Bi:YIG, and Ce:YIG Films With High Faraday Rotations," IEEE Photonics Journal, vol. 6, no. 1, pp. 1-8, 2014, doi: 10.1109/JPHOT.2013.2293610

    2014

  19. [28]

    Optical characterization of patterned thin films,

    D. Rosu, P. Petrik, G. Rattmann, M. Schellenberger, U. Beck, and A. Hertwig, "Optical characterization of patterned thin films," Thin Solid Films, vol. 571, pp. 601-604, 2014/11/28/ 2014, doi: https://doi.org/10.1016/j.tsf.2013.11.052

    2014 doi

  20. [29]

    Tailoring the CdS/CdSe/CdTe multilayer structure for optimization of photovoltaic device performance guided by mapping spectroscopic ellipsometry,

    M. A. Razooqi Alaani et al., "Tailoring the CdS/CdSe/CdTe multilayer structure for optimization of photovoltaic device performance guided by mapping spectroscopic ellipsometry," Solar Energy Materials and Solar Cells, vol. 221, p. 110907, 2021/03/01/ 2021, doi: https://doi.org...

    2021

  21. [30]

    Optical and magneto-optical properties of Bi substituted yttrium iron garnets prepared by metal organic decomposition,

    E. Jesenska et al., "Optical and magneto-optical properties of Bi substituted yttrium iron garnets prepared by metal organic decomposition," Opt. Mater. Express, vol. 6, no. 6, pp. 1986-1997, 2016/06/01 2016, doi: 10.1364/OME.6.001986

    1986 doi

  22. [31]

    Optical and magneto-optical behavior of Cerium Yttrium Iron Garnet thin films at wavelengths of 200–1770 nm,

    M. C. Onbasli et al., "Optical and magneto-optical behavior of Cerium Yttrium Iron Garnet thin films at wavelengths of 200–1770 nm," Scientific Reports, vol. 6, no. 1, p. 23640, 2016/03/30 2016, doi: 10.1038/srep23640

    2016 doi

  23. [32]

    Mueller matrix optical and magneto-optical characterization of Bi- substituted gadolinium iron garnet for application in magnetoplasmonic structures,

    L. Halagačka et al., "Mueller matrix optical and magneto-optical characterization of Bi- substituted gadolinium iron garnet for application in magnetoplasmonic structures," Opt. Mater. Express, vol. 4, no. 9, pp. 1903-1919, 2014/09/01 2014, doi: 10.1364/OME.4.001903

    1903 doi

  24. [33]

    Uniform film in large areas deposited by magnetron sputtering with a small target,

    C. Z. Jiang, J. Q. Zhu, J. C. Han, P. Lei, and X. B. Yin, "Uniform film in large areas deposited by magnetron sputtering with a small target," Surface and Coatings Technology, vol. 229, pp. 222-225, 2013/08/25/ 2013, doi: https://doi.org/10.1016/j.surfcoat.2012.03.075

    2013 doi

  25. [34]

    Thickness distribution of sputtered films on curved substrates for adjustable x-ray optics,

    B. Nathan et al., "Thickness distribution of sputtered films on curved substrates for adjustable x-ray optics," Journal of Astronomical Telescopes, Instruments, and Systems, vol. 5, no. 2, p. 021005, 3/1 2019, doi: 10.1117/1.JATIS.5.2.021005

    2019 doi

  26. [35]

    Strong magneto‐optical enhancement in highly Ce‐substituted iron garnet films prepared by sputtering,

    M. Gomi, H. Furuyama, and M. Abe, "Strong magneto‐optical enhancement in highly Ce‐substituted iron garnet films prepared by sputtering," Journal of Applied Physics, vol. 70, no. 11, pp. 7065-7067, 1991, doi: 10.1063/1.349786

    1991 doi

Pith tools

Reviewed August 14, 2026 · model on record in the stance chip above.