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Insulating phase of a two-dimensional electron gas in MgZnO/ZnO heterostructure below nu = 1/3

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arxiv 1106.5605 v1 pith:2ZXSUJY2 submitted 2011-06-28 cond-mat.mes-hall

classification cond-mat.mes-hall
keywords electronhallmgznoquantumbelowcarrierchargedensity
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We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO heterointerface in a high magnetic field up to 26 T. High electron mobility and low charge carrier density enabled the observation of the fractional quantum Hall state nu = 1/3. For an even lower charge carrier density, we observe a transition from quantum Hall liquid to an insulator below the filling factor 1/3. Because of the large electron effective mass in ZnO, we suggest the MgZnO/ZnO heterostructure to be a prototype system for highly correlated quantum Hall physics.

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