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arxiv 1001.3050 v1 pith:34QR4ZX6 submitted 2010-01-18 physics.ins-det

Microchannel avalanche photodiode with wide linearity range

Z. Sadygov , A. Olshevski , N. Anphimov , T. Bokova , V. Chalyshev , I. Chirikov-Zorin , A. Dovlatov , Z. Krumshtein
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R. Mekhtieva R. Mukhtarov V. Shukurova M. Troitskaya V. Zhezher
This is my paper
classification physics.ins-det
keywords avalanchedevicelinearitymicrochannelphotodiodepixelrangeallows
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Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10^5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is a directly biased p-n junction under each pixel which plays role of an individual quenching resistor. This allows increasing pixel density up to 40000 per mm^2 and making entire device area sensitive.

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