Paper Citation Record · LEDGER

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon

As of 15 August 2026, this Paper Citation Record lists 26 of 26 outbound references and 0 inbound Pith citation observations for arXiv:2607.27625.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2607.27625 v1

Coverage vector

measured 26 of 26 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-01T04:30:35.963659Z

measured 26 of 26 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-15T06:32:42.880941+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

26 of 26 outbound references displayed

verified exact6
verified fuzzy0
unresolved19
parse uncertain0
malformed identifier1
metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation ede07e5f-a7e0-443f-9a5f-bfa26a920b76 · outbound

This paper cites GaN MMIC technology for microwave and millimeter-wave applications,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon GaN MMIC technology for microwave and millimeter-wave applications,

Reference 1

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:32.551760Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 3f7c6df9-3f70-48b8-94cc-ce020829a6ff · outbound

This paper cites A review of GaN on SiC high electron- mobility power transistors and MMICs,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon A review of GaN on SiC high electron- mobility power transistors and MMICs,

Reference 2

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:32.667623Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 6c31c729-0454-47ff-b877-08b3db33d46d · outbound

This paper cites Morkoç,Nitride Semiconductors and Devices, vol.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Morkoç,Nitride Semiconductors and Devices, vol

Reference 3

Resolution: verified exact; doi, observed 2026-08-01T04:33:22.558737Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 3369f55d-1382-427f-bedc-d446015c875f · outbound

This paper cites Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,

Reference 4

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:32.945110Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 7298f724-3632-423c-aa34-ca1ea9027ec1 · outbound

This paper cites Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,

Reference 5

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:33.154017Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation a4687bcf-9cc5-409b-aae0-aff88c7b58d5 · outbound

This paper cites Neuberger,III–V Semiconducting Compounds.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Neuberger,III–V Semiconducting Compounds

Reference 6

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:33.280990Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 2913ee37-8ca3-4936-8499-4ff84525a126 · outbound

This paper cites Quay,Gallium Nitride Electronics, vol.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Quay,Gallium Nitride Electronics, vol

Reference 7

Resolution: verified exact; doi, observed 2026-08-01T04:33:22.548635Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 2ee2f1eb-ec57-481d-9c01-acf6d4781b92 · outbound

This paper cites GaN-based transistors for high-frequency applications,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon GaN-based transistors for high-frequency applications,

Reference 8

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:33.565263Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 5fed8cee-9d0a-4336-9549-34d689952907 · outbound

This paper cites Physical limitations on frequency and power parameters of transistors,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Physical limitations on frequency and power parameters of transistors,

Reference 9

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:33.769121Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 7fd5e145-8bc7-41e0-8873-6d9ee9caeefb · outbound

This paper cites Power semiconductor device figure of merit for high-frequency applications,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Power semiconductor device figure of merit for high-frequency applications,

Reference 10

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:33.912491Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 895f53eb-2641-483e-9770-0eed249fe90a · outbound

This paper cites Optimal noise figure of microwave GaAs MES- FETs,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Optimal noise figure of microwave GaAs MES- FETs,

Reference 11

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:34.057478Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation ec2a9a3e-be7e-4403-a7b5-861c98914393 · outbound

This paper cites An AlGaN/GaN HEMT- based monolithic integrated x-band low noise amplifier,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon An AlGaN/GaN HEMT- based monolithic integrated x-band low noise amplifier,

Reference 12

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:34.167135Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 781bd587-7d63-4139-95d4-720d35c02140 · outbound

This paper cites Design of a Ku-band AlGaN/GaN low noise amplifier,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Design of a Ku-band AlGaN/GaN low noise amplifier,

Reference 13

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:34.301567Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 53a5e670-bd22-4723-b39f-32c22ccbf7ee · outbound

This paper cites Wideband W-band GaN LNA MMIC with state-of-the-art noise figure,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Wideband W-band GaN LNA MMIC with state-of-the-art noise figure,

Reference 14

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:34.436562Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 729f1448-ca8d-47ed-8fe6-53242305e22f · outbound

This paper cites Highly robust x-band LNA with extremely short recovery time,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Highly robust x-band LNA with extremely short recovery time,

Reference 15

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:34.610718Z

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Unavailable: canonical work link unavailable.

Observation 538f2652-3033-47a6-b69b-27af3dfcabe9 · outbound

This paper cites A reconfigurable S-/X-band GaN cascode LNA MMIC,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon A reconfigurable S-/X-band GaN cascode LNA MMIC,

Reference 16

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:34.687531Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation f9dbb0bc-53b8-4ea9-93c9-639573cf1c2d · outbound

This paper cites X- and Ku-band internally matched GaN ampli- fiers with more than 100 w output power,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon X- and Ku-band internally matched GaN ampli- fiers with more than 100 w output power,

Reference 17

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:34.768810Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 526433be-9ede-497f-8f3e-73a9af9ccb49 · outbound

This paper cites X-band internally harmonic controlled GaN HEMT amplifier with 57% power added efficiency,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon X-band internally harmonic controlled GaN HEMT amplifier with 57% power added efficiency,

Reference 18

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:34.891686Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation c916498c-1a27-4253-8b48-687fc201dc4e · outbound

This paper cites GaN MMIC PAs for e-band (71 GHz–95 GHz) radio,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon GaN MMIC PAs for e-band (71 GHz–95 GHz) radio,

Reference 19

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:34.980931Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 91318af8-65a2-4903-a13f-3cffb0cef83c · outbound

This paper cites GaN based l-band high power and high efficiency pulsed transmitter,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon GaN based l-band high power and high efficiency pulsed transmitter,

Reference 20

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:35.152368Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 6f12923c-a3aa-4137-b7fd-51c4f984a096 · outbound

This paper cites Meneghesso, M.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Meneghesso, M

Reference 21

Resolution: malformed identifier; no resolver link, observed 2026-08-01T04:30:35.272352Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 3c831151-062e-4e90-aa49-4628599eb586 · outbound

This paper cites GaN HEMTs technology and applications (chapter 14),.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon GaN HEMTs technology and applications (chapter 14),

Reference 22

Resolution: verified exact; doi, observed 2026-08-01T04:33:22.530955Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 91736999-bc77-49cd-b11e-7b2d811524a7 · outbound

This paper cites GaN technology for radars,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon GaN technology for radars,

Reference 23

Resolution: unresolved; no resolver link, observed 2026-08-01T04:30:35.546725Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation dff6029f-81b2-43ab-b4fa-aba1ac9b5564 · outbound

This paper cites Ion implantation in group III-nitride semicon- ductors: A tool for doping and defect studies,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Ion implantation in group III-nitride semicon- ductors: A tool for doping and defect studies,

Reference 24

Resolution: verified exact; doi, observed 2026-08-01T04:33:22.521618Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 6089652b-1df7-4cdd-837e-8f7c95fa1c6f · outbound

This paper cites Electrical and structural characterization of ion implanted GaN,.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Electrical and structural characterization of ion implanted GaN,

Reference 25

Resolution: verified exact; doi, observed 2026-08-01T04:33:22.512128Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 4079b3b1-f8dc-4da7-98f3-60965b454833 · outbound

This paper cites an unresolved cited work.

Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon Unresolved cited work

Reference 26

Resolution: verified exact; doi, observed 2026-08-01T04:33:22.501839Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Pith citing papers

No inbound Pith citation observations are available.