Pith. sign in

REVIEW 3 major objections 5 minor 80 references

Laser-cut Patterned, Micrometer-thin Diamond Membranes with Coherent Color Centers for Open Microcavities

T0 review · 3 major / 5 minor · reviewed 2026-08-06 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗

Pith's one-line read The paper demonstrates that femtosecond laser-cutting can pattern micrometer-thin diamond membranes into microdevices whose cavity finesse and coherent color centers match those made by standard electron-beam lithography, while…

desk verdict A useful fabrication demonstration whose central 'comparable properties' claim rests on a thin statistical base; worth publishing after the comparison is tightened. read the letter →

arxiv 2506.20713 v1 pith:3IAOQGLN submitted 2025-06-25 quant-ph physics.optics

Yanik Herrmann , Julia M. Brevoord , Julius Fischer , Stijn Scheijen , Colin Sauerzapf , Nina Codreanu , Leonardo G. C. Wienhoven , Yuran M. Q. van der Graaf
show 5 more authors
Cornelis F. J. Wolfs Régis Méjard Maximilian Ruf Nick de Jong Ronald Hanson
This is my paper
classification quant-phphysics.optics
keywords lasercuttingdiamondmembranesopenmicrocavitiescavityfinessecolorcentersnitrogen-vacancytin-vacancynanofabrication
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper introduces a femtosecond laser-cutting method for patterning micrometer-thin diamond membranes into microdevices (edge lengths of typically 10–100 micrometres) and claims that the resulting devices are equivalent in quality to devices made with a conventional electron-beam lithography process. It supports this claim with scanning cavity microscopy: two-dimensional finesse maps over bonded devices show comparable cavity quality factors and fitted surface roughness values (0.9 nm for the laser-cut device, 1.2 nm for the EBL device). The devices host optically coherent Tin-Vacancy and Nitrogen-Vacancy centers, with pure dephasing linewidths near the transform limit, making them suitable for quantum networking. If the claim holds, this would simplify and shorten diamond microdevice fabrication, reduce the equipment needed, and make the platform more accessible without sacrificing cavity performance.

What carries the argument

The argument is carried by the cavity loss model for a plano–concave microcavity with a diamond device bonded to the sample mirror, together with the distinction between air-like and diamond-like mode thicknesses (Eq. 1): at air-like thicknesses $t_d = q\lambda/(2 n_d)$, the electric-field intensity at the diamond surface is minimal and losses are low, whereas at diamond-like thicknesses $t_d = (2q+1)\lambda/(4 n_d)$ the field intensity inside the diamond is maximal. The effective losses in Eq. (2) combine the air-side mirror loss, diamond-side losses weighted by the electric-field intensity ratio $n_d E^2_{max,d}/E^2_{max,a}$ (Eq. 3), and an additional-loss term $L_{add}$. The diamond-side scattering loss $L_{S,eff,d}$ in Eq. (4) depends on the surface roughness $\sigma_{DA}$, so the measured finesse modulation with thickness directly yields the device surface quality. Fitting this model to finesse-versus-thickness data with $L_{add}$ and $\sigma_{DA}$ as free parameters produces the roughness values (0.9 nm laser-cut, 1.2 nm EBL) that ground the claim that the two fabrication methods are comparable.

What would settle it

Use atomic force microscopy to measure the surface roughness of the two characterized devices: if the measured root-mean-square roughness disagrees with the loss-model fits (0.9 nm for the laser-cut device, 1.2 nm for the EBL device) by more than the fit uncertainty, the claim of comparable surface quality is falsified.

Watch

Extended reading notes

Core claim

The central discovery is that a patterning step based on femtosecond laser-cutting, followed by a strain-relief etch and device release, produces micrometer-thin diamond devices with cavity-relevant properties comparable to those produced by the established two-step EBL/SiN hard-mask process. In a side-by-side comparison of one device per method, bonded to a cavity Bragg mirror, scanning cavity microscopy yields finesse maps with the same thickness-dependent modulation between air-like and diamond-like modes. Fitting the cavity loss model gives surface roughness of 0.9 nm for the laser-cut device versus 1.2 nm for the EBL device, and both devices reach finesse values near the bare-cavity value at air-like mode thicknesses. The paper further shows that laser-cut devices host SnV centers with pure dephasing linewidths around 32 MHz (close to transform-limited) and EBL devices host NV centers with linewidths between 38 MHz and 130 MHz, with a median of 62 MHz.

Load-bearing premise

The central comparison depends on a loss model that attributes all unexplained cavity losses to surface roughness through two free fit parameters ($L_{add}$ and $\sigma_{DA}$), and it rests on only one device per fabrication method.

Editorial extensions

If this is right

  • Laser-cutting reduces the fabrication tool set to a femtosecond pulsed laser writer plus a reactive-ion etch system, and the cutting step can be outsourced, making diamond microdevice fabrication simpler, faster, and more accessible.
  • From the measured finesse of about 9000 (air-like) and 2000 (diamond-like) with a 17.3 µm radius-of-curvature fiber mirror, the expected maximum Purcell factors are about 30 for NV centers (39 with diamond-like modes) and similarly for SnV with adjusted mirror coatings, with outcoupling efficiencies of 40–51%.
  • Because the devices host optically coherent SnV and NV centers with near-transform-limited pure dephasing and can be combined with integrated microwave striplines on the mirror, they are ready-made spin-photon interface nodes for quantum network experiments.
  • The method's roughly 10 µm rough edge region limits the usable area, but the remaining central region (tens of micrometers across) still accommodates cavity spots with micrometer-scale beam waists.
  • Since the pattern is defined directly by the laser, the method supports arbitrary device shapes and sizes, extending beyond microcavities to quantum sensing and heterogeneous photonic structures.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • A single device per fabrication method cannot establish statistical equivalence; the natural next step is to repeat the finesse and fitted-roughness comparison over several devices per method and compare distributions rather than point values.
  • The near-transform-limited SnV coherence in the laser-cut device suggests the cutting and release steps do not introduce damaging bulk strain, so the method should generalize to other group-IV vacancy centers (SiV, GeV) that are more strain-sensitive.
  • The polarization-splitting data show larger strain near laser-cut edges, implying a testable route: anneal or etch the cut edges further and check whether the usable high-finesse area grows.
  • The loss model assumes zero absorption in the diamond; a direct absorption measurement at 637 nm on the released devices would show whether the fitted roughness values (0.9 nm and 1.2 nm) are true surface roughness or upper bounds that absorb other losses.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The manuscript introduces a femtosecond laser-cutting method for patterning micrometer-thin diamond membranes and compares it with an established electron-beam-lithography (EBL) fabrication route. Devices from both methods are bonded to cavity mirrors and characterized by two-dimensional scanning cavity microscopy, from which cavity finesse maps are used to extract device thickness, surface roughness, and additional losses. The authors report that laser-cut devices exhibit finesse modulation consistent with air-like and diamond-like modes, with extracted surface roughness of 0.9 nm versus 1.2 nm for the EBL device, and additional losses of 610 ppm versus 820 ppm. They further characterize coherent SnV and NV centers in the devices and estimate Purcell factors achievable in such microcavities. The paper claims that laser-cut devices show properties similar to EBL-fabricated devices and that both are suitable for quantum networking applications.

Significance. If the central comparison is sound, the laser-cutting method is a substantially simpler and more accessible route to fabricating thin diamond microdevices for open microcavities, which would benefit quantum networking and sensing experiments. The paper provides a detailed fabrication protocol, openly available data and analysis software (Ref. [78]), and coherent color-center measurements in laser-cut devices. The two-dimensional finesse maps and the systematic comparison with EBL devices are valuable experimental contributions. However, the main claim of 'similar properties' currently rests on a small number of devices and on fits with unquantified uncertainties, so the strength of the conclusion exceeds the evidence presented.

major comments (3)
  1. [§3.2, Fig. 4] The central comparison of surface quality is based on fits of the cavity loss model, Eqs. (2)-(4), with two free parameters per device (L_add and sigma_DA), yet no uncertainties are reported for the extracted values (0.9 nm and 1.2 nm roughness; 610 ppm and 820 ppm additional losses). Moreover, for the EBL device, finesse in the diamond-like mode regions cannot be determined because the transmission is too low (Fig. 3c, main text). These are precisely the low-finesse points that most strongly constrain sigma_DA, so the reported 1.2 nm is a fit to a censored dataset. The authors should provide confidence intervals for the fit parameters, treat the censored data explicitly (e.g., as upper limits) or justify their exclusion, and propagate uncertainties from the mirror-loss values used in the fit. Without this, the 0.9 nm vs 1.2 nm comparison is not conclusive.
  2. [§2-§3, abstract] The claim that laser-cut devices exhibit 'similar properties' to EBL-fabricated devices is based on one device per method (Vincent Vega and Pai Mei), which differ in thickness (about 2.5 um vs 3.5 um), in color-center species (SnV vs NV), and originate from different parent membranes. This experimental design cannot separate method-level differences from sample-to-sample variation. The authors should either characterize additional devices from both methods or soften the abstract and conclusion to state that the specific devices compared show comparable properties, leaving the method-level claim as a preliminary demonstration.
  3. [§3.2, thickness calibration] The finesse-versus-thickness analysis relies on calibrating the white-light-interferometer thickness values using a cavity-dispersion measurement at one air-like mode on each device (Appendix E), yet the absolute thickness difference between the two methods is stated as 0.16-0.32 um. The fit then allows an additional thickness translation of <20 nm. Because the scattering loss term, Eq. (4), is sinusoidal in thickness, an incorrect thickness offset could systematically alter the extracted sigma_DA. The authors should show that the extracted roughness values are stable under plausible variations of the thickness offset within the stated 0.16-0.32 um range, rather than only within the <20 nm translation.
minor comments (5)
  1. [Fig. 5 caption] The word 'seperately' should be 'separately'.
  2. [References [17] and [77]] The journal name 'AVS Quantum Science' is rendered as 'A VS Quantum Science' in the reference list.
  3. [Appendix A, Table A1] The table heading 'T able A1' contains a formatting error, and the hard-mask material is written as 'SixNy' in places; it should be 'Si_xN_y'.
  4. [Fig. 3c] The caption for Fig. 3c does not mention that no finesse values could be obtained in the diamond-like mode regions of the EBL device; this is stated only in the main text and is important for interpreting the data.
  5. [Fig. 4 caption] The statement that 'more than 60% of the finesse values lie between the two curves' is not quantified in the text; the Gaussian-binning procedure used to define the upper and lower curves should be described in more detail so the reader can assess the spread.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the central comparison rests on independent scanning-cavity finesse data fitted with a loss model whose free parameters are determined from, not equal to, the data.

full rationale

The paper's central claim — that laser-cut and EBL-fabricated diamond microdevices exhibit comparable cavity finesses and surface quality — is supported by raw two-dimensional finesse maps (Fig. 3) and by fits of Eq. (2) to measured finesse-versus-thickness data (Fig. 4). The fit parameters σ_DA and L_add are not inputs; they are extracted from the measured finesse values, so the conclusion does not reduce by construction to an assumption. The loss model (Eqs. 2–4) is cited to prior work by the same group (Ref. [55]), but it is a standard, externally falsifiable Fabry–Pérot loss model, and the underlying finesse measurements are raw experimental data independent of the model's validity. Self-citations to Refs. [26, 42, 55] describe methods and prior model development; they are not invoked as uniqueness theorems or as the sole evidence for the device comparison. Limitations such as the censored diamond-like finesse data on the EBL device and single-device statistics affect the strength of the comparison but are not circularity. The color-center coherence results (Section 4) are direct spectroscopic measurements with no fitted relation to the fabrication claim. The derivation chain is therefore self-contained, and no circular step can be exhibited from the paper's own equations.

Assumptions & free parameters 5 free parameters · 4 assumptions · 0 invented entities

The central claim rests on the validity of the cavity loss model and the assumption of negligible absorption in the diamond, plus the manufacturer-specified mirror losses. These are standard domain assumptions, not invented entities. The free parameters are explicit fit parameters in the finesse analysis.

free parameters (5)
  • Surface roughness sigma_DA (laser-cut device) = 0.9 nm
    Fitted from finesse vs diamond thickness using Eq. (2)-(4) in Sec. 3.2.
  • Surface roughness sigma_DA (EBL device) = 1.2 nm
    Fitted for the EBL device in Fig. 4(b) using the same loss model.
  • Additional losses L_add (laser-cut device) = 610 ppm
    Fitted in the loss model to account for unmodeled losses beyond mirror transmission and diamond losses.
  • Additional losses L_add (EBL device) = 820 ppm
    Fitted for the EBL device in Fig. 4(b).
  • Diamond thickness translation = <20 nm (unspecified within bound)
    Allowed as a fit parameter in Sec. 3.2 to align white-light interferometer thickness to cavity-dispersion thickness.
assumptions (4)
  • domain assumption Cavity loss model (Eqs. 2-4) accurately describes losses in the diamond-loaded microcavity
    Invoked in Sec. 3.1 and used for all finesse fits; model is taken from Ref. [55] by the same group.
  • domain assumption No absorption losses in the electronic-grade CVD diamond membranes
    Explicitly stated in Sec. 3.2 with Ref. [58]; if false, the extracted roughness and L_add would be coupled.
  • domain assumption Mirror coating losses L_M,a = 50 ppm and L_M,d = 670 ppm are as specified at 637 nm
    Used in Eq. (2) and the bare-cavity finesse estimate; deviations would shift all subsequent loss budgets.
  • domain assumption The finesse is limited by the sum of independent loss channels (no clipping, no nonlinear effects)
    Cavity lengths are kept below 15 um to avoid clipping (Appendix D), but the linear decomposition is assumed.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Laser-cut Patterned, Micrometer-thin Diamond Membranes with Coherent Color Centers for Open Microcavities." pith.science (2026). https://pith.science/paper/3IAOQGLN

@misc{pith2026250620713,
  author       = {Pith},
  title        = {Pith review of: Laser-cut Patterned, Micrometer-thin Diamond Membranes with Coherent Color Centers for Open Microcavities},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/3IAOQGLN}},
  note         = {Machine review of arXiv:2506.20713}
}
abstract

Micrometer-scale thin diamond devices are key components for various quantum sensing and networking experiments, including the integration of color centers into optical microcavities. In this work, we introduce a laser-cutting method for patterning microdevices from millimeter-sized diamond membranes. The method can be used to fabricate devices with micrometer thicknesses and edge lengths of typically 10 $\mu m$ to 100 $\mu m$. We compare this method with an established nanofabrication process based on electron-beam lithography, a two-step transfer pattern utilizing a silicon nitride hard mask material, and reactive ion etching. Microdevices fabricated using both methods are bonded to a cavity Bragg mirror and characterized using scanning cavity microscopy. We record two-dimensional cavity finesse maps over the devices, revealing insights about the variation in diamond thickness, surface quality, and strain. The scans demonstrate that devices fabricated by laser-cutting exhibit similar properties to devices obtained by the conventional method. Finally, we show that the devices host optically coherent Tin- and Nitrogen-Vacancy centers suitable for applications in quantum networking.

Figures

Figures reproduced from arXiv: 2506.20713 by the authors.

Figure 1
Figure 1. False-colored (cyan) scanning electron microscope (SEM) images of diamond microdevices obtained by laser-cutting (device originated from a parent diamond membrane named: Vincent Vega) in (a) and electron-beam lithography, and dry etching with a silicon nitride hard mask (Pai Mei) in (b). The devices are bonded to the cavity mirror. A gold stripline (yellow false-colored) can be used for microwave delivery. (c) Proce… view at source ↗
Figure 2
Figure 2. Comparison of diamond microdevices fabricated by laser-cutting and EBL. (a) Optical light microscope picture of the laser-cut microdevice (Vincent Vega). The rougher edge (indicated by the 10 µm spaced, dashed lines) of the laser-cut microdevice is visible. (b) The corresponding height map is measured with a white light interferometer. The white lines are overlayed and indicate a microdevice thickness matching air-l… view at source ↗
Figure 3
Figure 3. Scanning cavity microscopy of the diamond microdevices. Both devices show a clear modulation of the finesse due to the alternation between air-like and diamond-like modes. (a) Measured two-dimensional finesse scan on a laser-cut diamond microdevice (Vincent Vega). (b) Histogram of the finesse values measured in (a). Values on the diamond (bare cavity) are taken from inside the white rectangle (outside the black rect… view at source ↗
Figures from the paper (3 more)
Figure 4
Figure 4. Figure 4: Diamond thickness dependent finesse values observed by SCM. Finesse values are taken from inside the white rectangle in [PITH_FULL_IMAGE:figures/full_fig_p012_4.png]
Figure 5
Figure 5. Figure 5: Polarization splitting on the laser-cut diamond microdevice (Vincent Vega). (a) Polarization splitting is measured on the bare mirror and the diamond device. Data is taken within the same scan as shown in [PITH_FULL_IMAGE:figures/full_fig_p014_5.png]
Figure 6
Figure 6. Figure 6: Optical properties of SnV centers inside a laser-cut diamond microdevice (Vincent Vega) and NV centers inside an EBL patterned diamond device (Mr. Orange). The emitter linewidth measurements are performed at ∼ 4 K with a confocal microscope. (a) A map of the SnV device…

Discussion (0). Sign in to comment.

Reference graph

Works this paper leans on

80 extracted references · 54 canonical work pages

  1. [78]

    Herrmann Y, Brevoord J M, Fischer J, Scheijen S, Sauerzapf C, Codreanu N, Wienhoven L G C, van der Graaf Y M Q, Wolfs C F J, M´ ejard R, Ruf M, de Jong N and Hanson R 2025 Data and software underlying the publication ”Laser-cut Patterned, Micrometer-thin Diamond Membranes with Coherent Color Centers for Open Microcavities” 4TU Research Data URL https://ww...

    work page doi:10.4121/a8e32e27-5a91-4a4a-abfc-e5bd884317ae 2025

  2. [1]

    Janitz E, Bhaskar M K and Childress L 2020Optica71232 ISSN 2334-2536 URLhttps: //www.osapublishing.org/abstract.cfm?URI=optica-7-10-1232

    work page

  3. [2]

    Mi S, Kiss M, Graziosi T and Quack N 2020J. Phys. Photonics2042001 ISSN 2515-7647 URL https://iopscience.iop.org/article/10.1088/2515-7647/aba171

    doi:10.1088/2515-7647/aba171

  4. [3]

    Ruf M, Wan N H, Choi H, Englund D and Hanson R 2021Journal of Applied Physics130070901 ISSN 0021-8979 URLhttps://aip.scitation.org/doi/10.1063/5.0056534

    doi:10.1063/5.0056534

  5. [4]

    Lightwave Technol.407538–7571 ISSN 0733-8724, 1558-2213 URLhttps: //ieeexplore.ieee.org/document/9904837/

    Shandilya P K, Flagan S, Carvalho N C, Zohari E, Kavatamane V K, Losby J E and Barclay P E 2022J. Lightwave Technol.407538–7571 ISSN 0733-8724, 1558-2213 URLhttps: //ieeexplore.ieee.org/document/9904837/

    work page arXiv

  6. [5]

    Riedrich-M¨ oller J, Kipfstuhl L, Hepp C, Neu E, Pauly C, M¨ ucklich F, Baur A, Wandt M, Wolff S, Fischer M, Gsell S, Schreck M and Becher C 2012Nature Nanotech769–74 ISSN 1748-3387, 1748-3395 URLhttps://www.nature.com/articles/nnano.2011.190

    work page 2011

  7. [6]

    Lee J C, Magyar A P, Bracher D O, Aharonovich I and Hu E L 2013Diamond and Related Materials3345–48 ISSN 09259635 URLhttps://linkinghub.elsevier.com/retrieve/pii/ S0925963512002567

    work page

  8. [7]

    Phys.15025010 ISSN 1367-2630 URLhttps://iopscience.iop.org/article/10.1088/ 1367-2630/15/2/025010

    Faraon A, Santori C, Huang Z, Fu K M C, Acosta V M, Fattal D and Beausoleil R G 2013New J. Phys.15025010 ISSN 1367-2630 URLhttps://iopscience.iop.org/article/10.1088/ 1367-2630/15/2/025010

    work page

Show all 80 references
  1. [8]

    Ding S W, Haas M, Guo X, Kuruma K, Jin C, Li Z, Awschalom D D, Delegan N, Heremans F J, High A A and Lonˇ car M 2024Nat Commun156358 ISSN 2041-1723 URLhttps: //www.nature.com/articles/s41467-024-50667-5

  2. [9]

    Fuchs P, Jung T, Kieschnick M, Meijer J and Becher C 2021APL Photonics6086102 ISSN 2378-0967 URLhttps://aip.scitation.org/doi/10.1063/5.0057161

    doi

  3. [10]

    Janitz E, Ruf M, Dimock M, Bourassa A, Sankey J and Childress L 2015Phys. Rev. A92043844 ISSN 1050-2947, 1094-1622 URLhttps://link.aps.org/doi/10.1103/PhysRevA.92.043844

    doi

  4. [11]

    Bogdanovi´ c S, van Dam S B, Bonato C, Coenen L C, Zwerver A M J, Hensen B, Liddy M S Z, Fink T, Reiserer A, Lonˇ car M and Hanson R 2017Appl. Phys. Lett.110171103 ISSN 0003-6951, 1077-3118 URLhttp://aip.scitation.org/doi/10.1063/1.4982168

    doi

  5. [12]

    Riedel D, S¨ ollner I, Shields B J, Starosielec S, Appel P, Neu E, Maletinsky P and Warburton R J 2017Phys. Rev. X7031040 ISSN 2160-3308 URLhttps://link.aps.org/doi/10.1103/ PhysRevX.7.031040

  6. [13]

    Riedel D, Rohner D, Ganzhorn M, Kaldewey T, Appel P, Neu E, Warburton R J and Maletinsky P 2014Phys. Rev. Applied2064011 ISSN 2331-7019 URLhttps://link.aps.org/doi/10. 1103/PhysRevApplied.2.064011

  7. [14]

    Butcher A, Guo X, Shreiner R, Delegan N, Hao K, Duda P J I, Awschalom D D, Heremans F J and High A A 2020Nano Lett.204603–4609 ISSN 1530-6984 publisher: American Chemical Society URLhttps://doi.org/10.1021/acs.nanolett.0c01467

    doi

  8. [15]

    Guo X, Xie M, Addhya A, Linder A, Zvi U, Wang S, Yu X, Deshmukh T D, Liu Y, Hammock I N, Li Z, DeVault C T, Butcher A, Esser-Kahn A P, Awschalom D D, Delegan N, Maurer P C, Heremans F J and High A A 2024Nat Commun158788 ISSN 2041-1723 URL https://www.nature.com/articles/s41467...

  9. [16]

    Boyce A M, Li H, Wilson N C, Acil D, Shams-Ansari A, Chakravarthi S, Pederson C, Shen Q, Yama N, Fu K M C, Lonˇ car M and Mikkelsen M H 2024Nano Lett.243575–3580 ISSN 1530-6984, 1530-6992 URLhttps://pubs.acs.org/doi/10.1021/acs.nanolett.3c04002

    doi

  10. [17]

    Asif S, Chen H, Cremer J, Ravan S, T´ amara-Isaza J, Lamsal S, Ebadi R, Li Y, Zhou L J, Chang C Z, Xiao J Q, Yacoby A, Walsworth R L and Ku M J H 2024A VS Quantum Science 6044405 ISSN 2639-0213 URLhttps://pubs.aip.org/aqs/article/6/4/044405/3324301/ Diamond-micro-chip-for-quan...

  11. [18]

    Schlussel Y, Lenz T, Rohner D, Bar-Haim Y, Bougas L, Groswasser D, Kieschnick M, Rozenberg E, 28 Thiel L, Waxman A, Meijer J, Maletinsky P, Budker D and Folman R 2018Phys. Rev. Applied 10034032 ISSN 2331-7019 URLhttps://link.aps.org/doi/10.1103/PhysRevApplied.10. 034032

    doi

  12. [19]

    Carmiggelt J J, Bertelli I, Mulder R W, Teepe A, Elyasi M, Simon B G, Bauer G E W, Blanter Y M and Van Der Sar T 2023Nat Commun14490 ISSN 2041-1723 URLhttps: //www.nature.com/articles/s41467-023-36146-3

  13. [20]

    Ghiasi T S, Borst M, Kurdi S, Simon B G, Bertelli I, Boix-Constant C, Ma˜ nas-Valero S, Van Der Zant H S J and Van Der Sar T 2023npj 2D Mater Appl762 ISSN 2397-7132 URL https://www.nature.com/articles/s41699-023-00423-y

  14. [21]

    Borst M, Vree P H, Lowther A, Teepe A, Kurdi S, Bertelli I, Simon B G, Blanter Y M and Van Der Sar T 2023Science382430–434 ISSN 0036-8075, 1095-9203 URLhttps: //www.science.org/doi/10.1126/science.adj7576

    doi

  15. [22]

    Zhou J, Yan G Q, Huang M, McLaughlin N J, Du C R and Wang H 2023Applied Physics Letters123024003 ISSN 0003-6951, 1077-3118 URLhttps://pubs.aip.org/apl/article/ 123/2/024003/2901620/Quantum-sensing-of-local-stray-field-environment

  16. [23]

    Albrecht R, Bommer A, Deutsch C, Reichel J and Becher C 2013Phys. Rev. Lett.110243602 ISSN 0031-9007, 1079-7114 URLhttps://link.aps.org/doi/10.1103/PhysRevLett.110.243602

    doi

  17. [24]

    Kaupp H, Deutsch C, Chang H C, Reichel J, H¨ ansch T W and Hunger D 2013Phys. Rev. A88 053812 ISSN 1050-2947, 1094-1622 URLhttps://link.aps.org/doi/10.1103/PhysRevA.88. 053812

    doi

  18. [25]

    Phys.17122003 ISSN 1367-2630 URL https://iopscience.iop.org/article/10.1088/1367-2630/17/12/122003

    Johnson S, Dolan P R, Grange T, Trichet A A P, Hornecker G, Chen Y C, Weng L, Hughes G M, Watt A A R, Auff` eves A and Smith J M 2015New J. Phys.17122003 ISSN 1367-2630 URL https://iopscience.iop.org/article/10.1088/1367-2630/17/12/122003

    doi

  19. [26]

    Ruf M, IJspeert M, van Dam S, de Jong N, van den Berg H, Evers G and Hanson R 2019Nano Lett.193987–3992 ISSN 1530-6984, 1530-6992 URLhttps://pubs.acs.org/doi/10.1021/ acs.nanolett.9b01316

  20. [27]

    Yurgens V, Corazza A, Zuber J A, Gruet M, Kasperczyk M, Shields B J, Warburton R J, Fontana Y and Maletinsky P 2022Applied Physics Letters121234001 ISSN 0003-6951, 1077-3118 URLhttps://pubs.aip.org/apl/article/121/23/234001/2834882/ Spectrally-stable-nitrogen-vacancy-centers-in

  21. [28]

    Yurgens V, Fontana Y, Corazza A, Shields B J, Maletinsky P and Warburton R J 2024npj Quantum Inf10112 ISSN 2056-6387 URLhttps://www.nature.com/articles/ s41534-024-00915-9

  22. [29]

    Zifkin R, Rodr ´ ıguez Rosenblueth C D, Janitz E, Fontana Y and Childress L 2024PRX Quantum 5030308 ISSN 2691-3399 URLhttps://link.aps.org/doi/10.1103/PRXQuantum.5.030308

    doi

  23. [30]

    Berghaus R, Sachero S, Bayer G, Heupel J, Herzig T, Feuchtmayr F, Meijer J, Popov C and Kubanek A 2025Phys. Rev. Applied23034050 ISSN 2331-7019 URLhttps://link.aps.org/ doi/10.1103/PhysRevApplied.23.034050

    doi

  24. [31]

    Herrmann Y, Fischer J, Brevoord J M, Sauerzapf C, Wienhoven L G C, Feije L J, Pasini M, Eschen M, Ruf M, Weaver M J and Hanson R 2024Phys. Rev. X14041013 URL https://link.aps.org/doi/10.1103/PhysRevX.14.041013

    doi

  25. [32]

    Bogdanovi´ c S, Liddy M S Z, van Dam S B, Coenen L C, Fink T, Lonˇ car M and Hanson R 2017 APL Photonics2126101 ISSN 2378-0967 URLhttp://aip.scitation.org/doi/10.1063/1. 5001144

    2017 doi

  26. [33]

    Tamarat P, Gaebel T, Rabeau J R, Khan M, Greentree A D, Wilson H, Hollenberg L C L, Prawer S, Hemmer P, Jelezko F and Wrachtrup J 2006Phys. Rev. Lett.97083002 ISSN 0031-9007, 1079-7114 URLhttps://link.aps.org/doi/10.1103/PhysRevLett.97.083002

    doi

  27. [34]

    Parikh N R, Hunn J D, McGucken E, Swanson M L, White C W, Rudder R A, Malta D P, Posthill J B and Markunas R J 1992Applied Physics Letters613124–3126 ISSN 0003-6951, 1077-3118 URLhttps://pubs.aip.org/apl/article/61/26/3124/524530/ Single-crystal-diamond-plate-liftoff-achieved-by 29

  28. [35]

    Piracha A H, Rath P, Ganesan K, K¨ uhn S, Pernice W H P and Prawer S 2016Nano Lett.163341– 3347 ISSN 1530-6984, 1530-6992 URLhttps://pubs.acs.org/doi/10.1021/acs.nanolett. 6b00974

    doi

  29. [36]

    1002/adma.200801460

    Fairchild B A, Olivero P, Rubanov S, Greentree A D, Waldermann F, Taylor R A, Walmsley I, Smith J M, Huntington S, Gibson B C, Jamieson D N and Prawer S 2008Advanced Materials 204793–4798 ISSN 0935-9648, 1521-4095 URLhttps://onlinelibrary.wiley.com/doi/10. 1002/adma.200801460

  30. [37]

    Guo X, Delegan N, Karsch J C, Li Z, Liu T, Shreiner R, Butcher A, Awschalom D D, Heremans F J and High A A 2021Nano Lett.2110392–10399 ISSN 1530-6984, 1530-6992 URLhttps: //pubs.acs.org/doi/10.1021/acs.nanolett.1c03703

    doi

  31. [38]

    Faraon A, Barclay P E, Santori C, Fu K M C and Beausoleil R G 2011Nature Photon5301–305 ISSN 1749-4885, 1749-4893 URLhttps://www.nature.com/articles/nphoton.2011.52

    2011

  32. [39]

    Hausmann B J M, Shields B, Quan Q, Maletinsky P, McCutcheon M, Choy J T, Babinec T M, Kubanek A, Yacoby A, Lukin M D and Lonˇ car M 2012Nano Lett.121578–1582 ISSN 1530-6984, 1530-6992 URLhttps://pubs.acs.org/doi/10.1021/nl204449n

    doi

  33. [40]

    Ovartchaiyapong P, Pascal L M A, Myers B A, Lauria P and Bleszynski Jayich A C 2012Applied Physics Letters101163505 ISSN 0003-6951, 1077-3118 URLhttps://pubs.aip.org/apl/ article/101/16/163505/23609/High-quality-factor-single-crystal-diamond

  34. [41]

    Appel P, Neu E, Ganzhorn M, Barfuss A, Batzer M, Gratz M, Tsch¨ ope A and Maletinsky P 2016 Rev. Sci. Instrum.87063703 ISSN 0034-6748, 1089-7623 URLhttps://pubs.aip.org/rsi/ article/87/6/063703/902401/Fabrication-of-all-diamond-scanning-probes-for

    2016

  35. [42]

    Ruf M 2021Cavity-enhanced quantum network nodes in diamondDoctoral the- sis Delft University of Technology URLhttp://resolver.tudelft.nl/uuid: 933b37d4-7f00-4070-becc-9c462bf9d8df

  36. [43]

    Tao Y, Boss J M, Moores B A and Degen C L 2014Nat Commun53638 ISSN 2041-1723 URL https://www.nature.com/articles/ncomms4638

  37. [44]

    Heupel J, Pallmann M, K¨ orber J, Hunger D, Reithmaier J P and Popov C 2023Physica Status Solidi (a)2202200465 ISSN 1862-6300, 1862-6319 URLhttps://onlinelibrary.wiley.com/ doi/10.1002/pssa.202200465

    doi

  38. [45]

    Burek M J, de Leon N P, Shields B J, Hausmann B J M, Chu Y, Quan Q, Zibrov A S, Park H, Lukin M D and Lonˇ car M 2012Nano Lett.126084–6089 ISSN 1530-6984 publisher: American Chemical Society URLhttps://doi.org/10.1021/nl302541e

    doi

  39. [46]

    Khanaliloo B, Mitchell M, Hryciw A C and Barclay P E 2015Nano Lett.155131–5136 ISSN 1530-6984 URLhttps://doi.org/10.1021/acs.nanolett.5b01346

    doi

  40. [47]

    Phys.14093004 ISSN 1367-2630 URLhttps://iopscience.iop.org/ article/10.1088/1367-2630/14/9/093004

    Hodges J S, Li L, Lu M, Chen E H, Trusheim M E, Allegri S, Yao X, Gaathon O, Bakhru H and Englund D 2012New J. Phys.14093004 ISSN 1367-2630 URLhttps://iopscience.iop.org/ article/10.1088/1367-2630/14/9/093004

    doi

  41. [48]

    Toninelli C, Delley Y, St¨ oferle T, Renn A, G¨ otzinger S and Sandoghdar V 2010Applied Physics Letters97021107 ISSN 0003-6951, 1077-3118 URLhttps://pubs.aip.org/apl/article/97/ 2/021107/339108/A-scanning-microcavity-for-in-situ-control-of

  42. [49]

    Mader M, Reichel J, H¨ ansch T W and Hunger D 2015Nat Commun67249 ISSN 2041-1723 URL https://www.nature.com/articles/ncomms8249

  43. [50]

    Phys.21103029 ISSN 1367-2630 URLhttps://iopscience.iop.org/article/10.1088/1367-2630/ab49b4

    Benedikter J, Moosmayer T, Mader M, H¨ ummer T and Hunger D 2019New J. Phys.21103029 ISSN 1367-2630 URLhttps://iopscience.iop.org/article/10.1088/1367-2630/ab49b4

    doi

  44. [51]

    Eaton S M, Hadden J P, Bharadwaj V, Forneris J, Picollo F, Bosia F, Sotillo B, Giakoumaki A N, Jedrkiewicz O, Chiappini A, Ferrari M, Osellame R, Barclay P E, Olivero P and Ramponi R 2019Adv Quantum Tech21900006 ISSN 2511-9044, 2511-9044 URLhttps: //onlinelibrary.wiley.com/doi...

    doi

  45. [52]

    Norte R A, Moura J P and Gr¨ oblacher S 2016Phys. Rev. Lett.116147202 ISSN 0031-9007, 1079-7114 URLhttps://link.aps.org/doi/10.1103/PhysRevLett.116.147202

    doi

  46. [53]

    Ziegler J F, Ziegler M and Biersack J 2010Nuclear Instruments and Methods in Physics Research 30 Section B: Beam Interactions with Materials and Atoms2681818–1823 ISSN 0168583X URL https://linkinghub.elsevier.com/retrieve/pii/S0168583X10001862

  47. [54]

    Van Dam S B, Walsh M, Degen M J, Bersin E, Mouradian S L, Galiullin A, Ruf M, IJspeert M, Taminiau T H, Hanson R and Englund D R 2019Phys. Rev. B99161203 ISSN 2469-9950, 2469-9969 URLhttps://link.aps.org/doi/10.1103/PhysRevB.99.161203

    doi

  48. [55]

    Phys.20115004 ISSN 1367-2630 URL https://iopscience.iop.org/article/10.1088/1367-2630/aaec29

    van Dam S B, Ruf M and Hanson R 2018New J. Phys.20115004 ISSN 1367-2630 URL https://iopscience.iop.org/article/10.1088/1367-2630/aaec29

    doi

  49. [56]

    1007/978-3-662-04548-0

    Zaitsev A M 2001Optical Properties of Diamond(Berlin, Heidelberg: Springer Berlin Heidelberg) ISBN 978-3-642-08585-7 978-3-662-04548-0 URLhttp://link.springer.com/10. 1007/978-3-662-04548-0

  50. [57]

    K¨ orber J, Pallmann M, Heupel J, St¨ ohr R, Vasilenko E, H¨ ummer T, Kohler L, Popov C and Hunger D 2023Phys. Rev. Applied19064057 ISSN 2331-7019 URLhttps://link.aps.org/ doi/10.1103/PhysRevApplied.19.064057

    doi

  51. [58]

    Friel I, Geoghegan S L, Twitchen D J and Scarsbrook G A 2010 Development of high quality single crystal diamond for novel laser applicationsOptics and Photonics for Counterterrorism and Crime Fighting VI and Optical Materials in Defence Systems Technology VIIed Lewis C, Burges...

    2010 doi

  52. [59]

    Howell D 2012ejm24575–585 ISSN 0935-1221 URLhttp://www.schweizerbart.de/papers/ ejm/detail/24/78410/Strain_induced_birefringence_in_natural_diamond_a_?af= crossref

  53. [60]

    Beukers H K, Pasini M, Choi H, Englund D, Hanson R and Borregaard J 2024PRX Quantum5 010202 ISSN 2691-3399 URLhttps://link.aps.org/doi/10.1103/PRXQuantum.5.010202

    doi

  54. [61]

    Hensen B, Bernien H, Dr´ eau A E, Reiserer A, Kalb N, Blok M S, Ruitenberg J, Vermeulen R F L, Schouten R N, Abell´ an C, Amaya W, Pruneri V, Mitchell M W, Markham M, Twitchen D J, Elkouss D, Wehner S, Taminiau T H and Hanson R 2015Nature526682–686 ISSN 0028-0836, 1476-4687 UR...

  55. [62]

    Brevoord J M, De Santis L, Yamamoto T, Pasini M, Codreanu N, Turan T, Beukers H K, Waas C and Hanson R 2024Phys. Rev. Applied21054047 ISSN 2331-7019 URLhttps: //link.aps.org/doi/10.1103/PhysRevApplied.21.054047

    doi

  56. [63]

    Brevoord J M, Wienhoven L G C, Codreanu N, Ishiguro T, van Leeuwen E, Iuliano M, De Santis L, Waas C, Beukers H K C, Turan T, Errando-Herranz C, Kawaguchi K and Hanson R 2025 Appl. Phys. Lett.126ISSN 0003-6951 URLhttps://pubs.aip.org/aip/apl/article/126/ 17/174001/3345318/Larg...

    2025

  57. [64]

    Van De Stolpe G L, Feije L J, Loenen S J H, Das A, Timmer G M, De Jong T W and Taminiau T H 2025npj Quantum Inf1131 ISSN 2056-6387 URLhttps://www.nature.com/articles/ s41534-025-00985-3

  58. [65]

    Bernien H, Childress L, Robledo L, Markham M, Twitchen D and Hanson R 2012Phys. Rev. Lett.108043604 ISSN 0031-9007, 1079-7114 URLhttps://link.aps.org/doi/10.1103/ PhysRevLett.108.043604

  59. [66]

    Sipahigil A, Jahnke K D, Rogers L J, Teraji T, Isoya J, Zibrov A S, Jelezko F and Lukin M D 2014Phys. Rev. Lett.113113602 ISSN 0031-9007, 1079-7114 URLhttps://link.aps.org/ doi/10.1103/PhysRevLett.113.113602

    doi

  60. [67]

    Bernien H, Hensen B, Pfaff W, Koolstra G, Blok M S, Robledo L, Taminiau T H, Markham M, Twitchen D J, Childress L and Hanson R 2013Nature49786–90 ISSN 0028-0836, 1476-4687 URLhttp://www.nature.com/articles/nature12016

  61. [68]

    Quantum Technol.21800091 ISSN 2511-9044, 2511-9044 URLhttps://onlinelibrary.wiley.com/doi/10.1002/qute.201800091

    Borregaard J, Sørensen A S and Lodahl P 2019Adv. Quantum Technol.21800091 ISSN 2511-9044, 2511-9044 URLhttps://onlinelibrary.wiley.com/doi/10.1002/qute.201800091

    doi

  62. [69]

    Pieplow G, Torun C G, Munns J H D, Herrmann F M, Thies A, Pregnolato T and Schr¨ oder T 2024 Quantum Electrometer for Time-Resolved Material Science at the Atomic Lattice Scale arXiv:2401.14290 arXiv URLhttp://arxiv.org/abs/2401.14290 31

    2024 arXiv

  63. [70]

    Photon.ISSN 1749-4885, 1749-4893 URLhttps: //www.nature.com/articles/s41566-024-01456-5

    Li Z, Guo X, Jin Y, Andreoli F, Bilgin A, Awschalom D D, Delegan N, Heremans F J, Chang D, Galli G and High A A 2024Nat. Photon.ISSN 1749-4885, 1749-4893 URLhttps: //www.nature.com/articles/s41566-024-01456-5

  64. [71]

    Irber D M, Poggiali F, Kong F, Kieschnick M, L¨ uhmann T, Kwiatkowski D, Meijer J, Du J, Shi F and Reinhard F 2021Nat Commun12532 ISSN 2041-1723 URLhttps://www.nature.com/ articles/s41467-020-20755-3

  65. [72]

    Phys.25013011 ISSN 1367-2630 URLhttps: //iopscience.iop.org/article/10.1088/1367-2630/acb004

    Hermans S L N, Pompili M, Santos Martins L D, R-P Montblanch A, Beukers H K C, Baier S, Borregaard J and Hanson R 2023New J. Phys.25013011 ISSN 1367-2630 URLhttps: //iopscience.iop.org/article/10.1088/1367-2630/acb004

    doi

  66. [73]

    Phys.12 065038 ISSN 1367-2630 URLhttps://iopscience.iop.org/article/10.1088/1367-2630/ 12/6/065038

    Hunger D, Steinmetz T, Colombe Y, Deutsch C, H¨ ansch T W and Reichel J 2010New J. Phys.12 065038 ISSN 1367-2630 URLhttps://iopscience.iop.org/article/10.1088/1367-2630/ 12/6/065038

    doi

  67. [74]

    Phys.17013053 ISSN 1367-2630 URLhttps://iopscience.iop.org/article/10.1088/1367-2630/17/1/013053

    Uphoff M, Brekenfeld M, Rempe G and Ritter S 2015New J. Phys.17013053 ISSN 1367-2630 URLhttps://iopscience.iop.org/article/10.1088/1367-2630/17/1/013053

    doi

  68. [75]

    Express3319205 ISSN 1094-4087 URLhttps://opg.optica.org/abstract.cfm?URI=oe-33-9-19205

    Maier P, Rupp S, Lettner N, Denschlag J H and Kubanek A 2025Opt. Express3319205 ISSN 1094-4087 URLhttps://opg.optica.org/abstract.cfm?URI=oe-33-9-19205

  69. [76]

    Guo X, Stramma A M, Li Z, Roth W G, Huang B, Jin Y, Parker R A, Arjona Mart ´ ınez J, Shofer N, Michaels C P, Purser C P, Appel M H, Alexeev E M, Liu T, Ferrari A C, Awschalom D D, Delegan N, Pingault B, Galli G, Heremans F J, Atat¨ ure M and High A A 2023Phys. Rev. X 13041037...

    doi

  70. [77]

    Herrmann Y, Fischer J, Scheijen S, Wolfs C F J, Brevoord J M, Sauerzapf C, Wienhoven L G C, Feije L J, Eschen M, Ruf M, Weaver M J and Hanson R 2024A VS Quantum Science 6041401 ISSN 2639-0213 URLhttps://pubs.aip.org/aqs/article/6/4/041401/3325344/ A-low-temperature-tunable-mic...

  71. [79]

    Ruf M, Weaver M, van Dam S and Hanson R 2021Phys. Rev. Applied15024049 ISSN 2331-7019 URLhttps://link.aps.org/doi/10.1103/PhysRevApplied.15.024049

    doi

  72. [80]

    van Dam S 2019Optical cavities, coherent emitters, and protocols for diamond-based quantum networksDoctoral thesis Delft University of Technology URLhttp://resolver.tudelft.nl/ uuid:225ba0ab-22d7-4d1e-a12c-85e0ed55c51d

Pith tools

Reviewed August 6, 2026 · model on record in the stance chip above.