Pith. sign in

REVIEW 2 major objections 5 minor 53 references

Understanding surface potential dynamics of passivated perovskites via Kelvin Probe Force Microscopy

T0 review · 2 major / 5 minor · reviewed 2026-07-10 · grok-4.5

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read Amino-silane passivation flattens perovskite surface potential, raises photovoltage, and cuts grain-boundary barriers.

desk verdict Solid nanoscale KPFM evidence that AEAPTMS flattens dark CPD, speeds and enlarges SPV, and damps GB barriers, with open analysis code; the QFLS/VOC link is correlative, not a hard identity. read the letter →

arxiv 2607.07221 v2 pith:3IOKNDHE submitted 2026-07-08 cond-mat.mtrl-sci physics.app-ph

Rehmat Sood-Goodwin , Xue-Li Cao , Benjamin C. Kinvig , Robert D. J. Oliver , Yen-Hung Lin , Nic Mullin , Alexandra J. Ramadan This is my paper · ORCID
classification cond-mat.mtrl-sciphysics.app-ph
keywords KelvinprobeforcemicroscopysurfacephotovoltageperovskitepassivationAEAPTMSgrainboundariescontactpotentialdifferencequasi-Fermilevelsplitting
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper sets out to show that a common amino-silane passivation molecule does more than improve solar-cell numbers: it rewrites the electronic map of a mixed-cation perovskite film at the nanoscale. Using amplitude-modulated Kelvin probe force microscopy, the authors map contact potential difference and surface photovoltage before and after treatment with AEAPTMS. They find the dark potential distribution collapses from roughly 46 mV to 15 mV wide, the steady-state photovoltage rises from about 345 mV to 417 mV, and the film settles under light almost twice as fast. Wavelength-dependent scans indicate less sub-bandgap disorder, and a grain-boundary masking analysis shows that the potential barrier between grains is strongly suppressed. A sympathetic reader cares because these local metrics supply a direct electronic explanation for the open-circuit-voltage gains that passivation is already known to deliver, and they do so without requiring full device fabrication.

What carries the argument

Amplitude-modulated Kelvin probe force microscopy (AM-KPFM) under controlled bottom-side illumination, combined with a topography-derived grain-boundary mask that isolates CPD and SPV statistics for grain interiors versus boundaries.

What would settle it

If independent surface-photovoltage or device open-circuit-voltage measurements on identically prepared films show no increase after AEAPTMS treatment, or if higher-resolution potential maps reveal that the apparent barrier reduction is an artefact of tip convolution or mask width, the central interpretation fails.

Watch

Extended reading notes

Core claim

AEAPTMS homogenises the dark contact-potential-difference landscape of FA0.83Cs0.17Pb(I0.9Br0.1)3 films (FWHM from ~45.7 mV to ~14.6 mV), increases steady-state surface photovoltage from ~345 mV to ~417 mV while cutting the stabilisation time constant from ~840 s to ~470 s, reduces sub-bandgap response, and drives grain-boundary-to-interior potential differences toward zero, producing a more uniform and stable carrier landscape.

Load-bearing premise

The claim rests on treating the measured surface photovoltage under bottom illumination as a faithful local proxy for quasi-Fermi-level splitting and device open-circuit voltage, and on the grain-boundary masks cleanly separating electronic barriers from topographic artefacts.

Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

2 major / 5 minor

Summary. The manuscript uses amplitude-modulated Kelvin probe force microscopy (AM-KPFM) with bottom illumination to map how AEAPTMS passivation alters the nanoscale surface potential and photovoltage dynamics of FA0.83Cs0.17Pb(I0.9Br0.1)3 films. In the dark, passivation narrows the CPD distribution from ~45.7 mV to ~14.6 mV FWHM without morphological change. Under ~1-sun white light, passivated films reach a larger steady-state SPV (~417 vs ~345 mV) with a shorter exponential time constant (~470 vs ~840 s). Wavelength-dependent SPV (365 nm vs 850 nm) indicates reduced sub-bandgap electronic disorder, and a topography-derived grain-boundary masking pipeline shows that AEAPTMS reduces the magnitude of ΔCPD = CPD_GI − CPD_GB, consistent with suppression of grain-boundary potential barriers. Open analysis code is provided.

Significance. The work supplies direct nanoscale electronic evidence for a passivation chemistry previously validated mainly at device level, linking amino-silane treatment to CPD homogenisation, faster SPV stabilisation, and reduced GB barriers. The multi-wavelength temporal SPV protocol and the open-source GB-masking analysis are reusable tools for the perovskite KPFM community. If the measured trends hold, they strengthen the mechanistic case that AEAPTMS improves carrier landscape homogeneity and thereby supports higher photovoltage. Strengths include reported fit uncertainties, multi-image GB analysis, and released code.

major comments (2)
  1. Results (Figs 2–3 and associated text): SPV is repeatedly described as a localised proxy for QFLS/VOC. The manuscript should state more explicitly that bottom illumination and free-surface (probe–perovskite) geometry make SPV only correlative with device VOC, not a quantitative identity. A short paragraph quantifying or bounding possible contributions from ion motion, tip–sample electrostatics, and bottom-side generation would keep the central claim load-bearing without over-interpretation.
  2. Results, grain-boundary analysis (Fig 5, Note S6): The claim that AEAPTMS suppresses GB potential barriers rests on topography-derived masks. The paper already notes mask-width and image-to-image variation (Fig S4). A brief control or discussion of residual topographic crosstalk / tip convolution (e.g., comparison of ΔCPD on regions of similar height contrast, or a statement of lateral resolution relative to GB width) is needed so that the ΔCPD → 0 conclusion is not vulnerable to topographic artefacts.
minor comments (5)
  1. Fig 1 caption / text: the CPD peak-position shift is dismissed as uncalibrated; a one-sentence statement that absolute CPD is not interpreted would avoid reader confusion.
  2. Eqs (1)–(2) and surrounding text: notation for work function (Φ vs ϕ) is inconsistent; standardise.
  3. Methods / SI: illumination spectra and intensity calibration for the white lamp and monochromatic LEDs are referenced (Fig S6, Note S8); ensure the main text briefly states approximate photon flux or equivalent suns for 365 nm and 850 nm so wavelength comparisons are self-contained.
  4. Typographical: “Collated pixel distributions” and occasional missing articles; a light copy-edit pass would improve readability.
  5. References: several self-citations to the authors’ prior AEAPTMS device paper are appropriate for context; ensure non-self literature on amino-silane and KPFM SPV is balanced.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: CPD/SPV/ΔCPD are measured observables extracted by standard fitting and masking, not quantities forced by definition or self-citation.

full rationale

The paper reports direct AM-KPFM observables (dark CPD histograms, SPV = CPD_light − CPD_dark, exponential time constants, and topography-masked ΔCPD = CPD_GI − CPD_GB). Equations (1)–(2) are the conventional definitions of CPD and SPV; the exponential fits and grain-boundary masks are post-processing of those data, not parameters fitted to force a later prediction. Self-citations to Lin et al. (Science 2024) supply the passivant chemistry and device-level context but are not used to derive or constrain the KPFM numbers. Wavelength-dependent controls and open analysis code further confirm that the headline trends are independent experimental results rather than tautologies. No self-definitional loop, fitted-input-as-prediction, uniqueness import, or ansatz smuggling is present.

Assumptions & free parameters 2 free parameters · 4 assumptions · 0 invented entities

The claims rest on standard electrostatic definitions of CPD/SPV, the domain assumption that bottom-illuminated SPV tracks QFLS, and the practical assumption that topography-derived masks isolate electronic GB barriers. No new physical entities are postulated; free parameters are limited to ordinary exponential-fit coefficients.

free parameters (2)
  • SPV exponential time constant τ and amplitude A
    Fitted to the rising edge of each temporal SPV curve (Note S5); used to quantify ‘stabilisation speed’ and steady-state SPV. Ordinary curve-fit parameters, not free model constants invented for the claim.
  • Grain-boundary mask width
    Incrementally varied (Fig. 5); ΔCPD trends are reported across widths, so the choice is explored rather than fixed ad hoc, but remains an analysis hyper-parameter.
assumptions (4)
  • domain assumption CPD = (ϕ_probe − ϕ_sample)/e and SPV = CPD_light − CPD_dark are valid local measures of surface potential and photovoltage
    Standard KPFM definitions (Eqs. 1–2); assumed throughout.
  • domain assumption SPV under the experimental illumination geometry is a proxy for quasi-Fermi-level splitting and therefore correlates with device VOC
    Stated in Introduction and used to interpret the larger steady-state SPV as improved photovoltage.
  • ad hoc to paper Topography-derived grain-boundary masks correctly segregate electronic contributions of GBs versus grain interiors without dominant topographic or tip artefacts
    Core of the new analysis pipeline (Fig. 5, Note S6); required for the claim that AEAPTMS suppresses GB barriers.
  • domain assumption Positive SPV indicates upward band bending / hole accumulation at the free surface
    Used in the band-diagram schematics (Fig. 2c,d) and discussion of carrier separation.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Understanding surface potential dynamics of passivated perovskites via Kelvin Probe Force Microscopy." pith.science (2026). https://pith.science/paper/3IOKNDHE

@misc{pith2026260707221,
  author       = {Pith},
  title        = {Pith review of: Understanding surface potential dynamics of passivated perovskites via Kelvin Probe Force Microscopy},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/3IOKNDHE}},
  note         = {Machine review of arXiv:2607.07221}
}
read the original abstract

Molecular passivation has become central to reducing photovoltage losses in metal-halide perovskite solar cells, but its electronic action is still often inferred from device-level metrics rather than directly resolved at the nanoscale. Here, we use amplitude-modulated Kelvin probe force microscopy to examine how [3-(2-aminoethylamino)propyl]trimethoxysilane (AEAPTMS) modifies the surface potential and photovoltage dynamics of mixed-cation, mixed-halide perovskite thin films. AEAPTMS homogenises the dark contact potential difference (CPD), narrowing its distribution from ~45.7 to ~14.6 mV without obvious morphological changes. Under illumination, passivated films show a larger steady-state surface photovoltage (SPV) and faster stabilisation, with the SPV increasing from ~345 to ~417 mV and the stabilisation time constant decreasing from ~840 to ~470 s. Wavelength-dependent SPV further indicates reduced sub-bandgap electronic disorder. By separating grain-boundary and grain-interior contributions, we show that AEAPTMS suppresses grain-boundary potential barriers, linking amino-silane passivation to a more homogeneous and stable carrier landscape.

Figures

Figures reproduced from arXiv: 2607.07221 by the authors.

Figure 5
Figure 5. [PITH_FULL_IMAGE:figures/full_fig_p008_5.png] view at source ↗
Figure 1
Figure 1. (a) Chemical structure of [3-(2-aminoethylamino)propyl]trimethoxysilane (AEAPTMS), (b) Schematic of Kelvin probe force microscopy (KPFM) set-up with arrow indicating illumination direction. KPFM images of FA0.83Cs0.17Pb(I0.9Br0.1)3 on ITO glass showing the height (c, d) and contact potential difference (CPD) (e, f). (g, h) Collated pixel distributions of the CPD images in (e) and (f) (respectively), where the solid … view at source ↗
Figure 2
Figure 2. Temporal surface photovoltage (SPV) characteristics for (a) unpassivated and (b) passivated perovskite thin films. Dashed lines indicate points at which illumination is turned on or off. Time constant, 𝜏, is related to the time taken to reach a steady state SPV. Grey shaded areas correspond to spread (FWHM) of each image, and solid lines indicate the peak SPV from fitting (See Fig S1a-d). Blue and pink shaded region… view at source ↗
Figures from the paper (2 more)
Figure 4
Figure 4. Figure 4: Height and contact potential difference (CPD) with insets indicating line profile regions for unpassivated (a. b) and passivated (c, d). Line profiles of height and CPD respectively (e, f) unpassivated and (g, h) passivated samples respectively. Black dashed line repre…
Figure 5
Figure 5. Figure 5: (a) Demonstration of grain analysis pipeline, further information can be obtained in [PITH_FULL_IMAGE:figures/full_fig_p010_5.png]

Review history (2 revisions) →

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

53 extracted references · 53 canonical work pages

  1. [1]

    D., Pothoof, J., Giridharagopal, R

    Breshears, M. D., Pothoof, J., Giridharagopal, R. & Ginger, D. S. Subdiffraction Imaging of Carrier Dynamics in Halide Perovskite Semiconductors: Effects of Passivation, Morphology, and Ion Motion. ACS Nano 19, 27395–27405 (2025)

    work page 2025

  2. [2]

    Xie, J. et al. Visualizing Carrier Diffusion in Cs-Doping FAPbI3 Perovskite Thin Films Using Transient Absorption Microscopy. Advanced Optical Materials 12, 2303004 (2024)

    work page 2024

  3. [3]

    & Kirchartz, T

    Akel, S., Kulkarni, A., Rau, U. & Kirchartz, T. Relevance of Long Diffusion Lengths for Efficient Halide Perovskite Solar Cells. PRX Energy 2, 013004 (2023)

    work page 2023

  4. [4]

    J., Oliver, R

    Ramadan, A. J., Oliver, R. D. J., Johnston, M. B. & Snaith, H. J. Methylammonium-free wide-bandgap metal halide perovskites for tandem photovoltaics. Nat Rev Mater 1–17 (2023) doi:10.1038/s41578-023-00610-9

    work page doi:10.1038/s41578-023-00610-9 2023

  5. [5]

    Albishi, M. S. et al. Bandgap engineering for efficient perovskite solar cells under multiple color temperature indoor lighting. Mater. Adv. 7, 4160–4170 (2026)

    work page 2026

  6. [7]

    Ball, J. M. & Petrozza, A. Defects in perovskite-halides and their effects in solar cells. Nat Energy 1, 1–13 (2016)

    work page 2016

  7. [8]

    Thiesbrummel, J. et al. Ion migration in perovskite solar cells. Nat Rev Chem 10, 179–195 (2026)

    work page 2026

  8. [9]

    Hiraoka, M. et al. Degradation of Perovskite Photovoltaics Manifested in the Cross-Sectional Potential Profile Studied by Quantitative Kelvin Probe Force Microscopy. ACS Appl. Energy Mater. 5, 4232–4239 (2022)

    work page 2022

Show all 53 references
  1. [10]

    Mahesh, S. et al. Revealing the origin of voltage loss in mixed-halide perovskite solar cells. Energy Environ. Sci. 13, 258–267 (2020). 15

    2020

  2. [11]

    Oliver, R. D. J. et al. Understanding and suppressing non-radiative losses in methylammonium-free wide-bandgap perovskite solar cells. Energy Environ. Sci. 15, 714–726 (2022)

    2022

  3. [12]

    Thiesbrummel, J. et al. Understanding and Minimizing VOC Losses in All- Perovskite Tandem Photovoltaics. Advanced Energy Materials 13, 2202674 (2023)

    2023

  4. [13]

    Shi, Y. et al. (3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity. ACS Energy Lett. 7, 4081–4088 (2022)

    2022

  5. [14]

    Guo, Z. et al. Understanding Defects in Perovskite Solar Cells through Computation: Current Knowledge and Future Challenge. Advanced Science 11, 2305799 (2024)

    2024

  6. [15]

    Queisser, H. J. & Haller, E. E. Defects in Semiconductors: Some Fatal, Some Vital. Science 281, 945–950 (1998)

    1998

  7. [16]

    Lin, Y.-H. et al. Bandgap-universal passivation enables stable perovskite solar cells with low photovoltage loss. Science 384, 767–775 (2024)

    2024

  8. [17]

    Qi, Y. et al. Effective Selection and Targeted Passivation for Different Defect Types by Ammonium Salts in Perovskite Solar Cells. Advanced Energy Materials 15, e00678 (2025)

    2025

  9. [18]

    Pan, J. et al. Bidentate Ligand-Passivated CsPbI3 Perovskite Nanocrystals for Stable Near-Unity Photoluminescence Quantum Yield and Efficient Red Light- Emitting Diodes. J. Am. Chem. Soc. 140, 562–565 (2018)

    2018

  10. [19]

    Giridharagopal, R. et al. Time-Resolved Electrical Scanning Probe Microscopy of Layered Perovskites Reveals Spatial Variations in Photoinduced Ionic and Electronic Carrier Motion. ACS Nano 13, 2812–2821 (2019). 16

    2019

  11. [20]

    Lanzoni, E. M. et al. The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cells. Nano Energy 88, 106270 (2021)

    2021

  12. [21]

    Weber, S

    L. Weber, S. A. et al. How the formation of interfacial charge causes hysteresis in perovskite solar cells. Energy & Environmental Science 11, 2404–2413 (2018)

    2018

  13. [22]

    & Shapira, Y

    Kronik, L. & Shapira, Y . Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering. Surface and Interface Analysis 31, 954–965 (2001)

    2001

  14. [23]

    Daboczi, M. et al. Origin of Open-Circuit Voltage Losses in Perovskite Solar Cells Investigated by Surface Photovoltage Measurement. ACS Appl. Mater. Interfaces 11, 46808–46817 (2019)

    2019

  15. [24]

    Harwell, J. R. et al. Probing the energy levels of perovskite solar cells via Kelvin probe and UV ambient pressure photoemission spectroscopy. Phys. Chem. Chem. Phys. 18, 19738–19745 (2016)

    2016

  16. [25]

    Donchev, V. et al. Surface Photovoltage Study of Metal Halide Perovskites Deposited Directly on Crystalline Silicon. ACS Omega 8, 8125–8133 (2023)

    2023

  17. [26]

    Nonnenmacher, M., O’Boyle, M. P. & Wickramasinghe, H. K. Kelvin probe force microscopy. Applied Physics Letters 58, 2921–2923 (1991)

    1991

  18. [27]

    Bonilla, R. S. Modelling of Kelvin probe surface voltage and photovoltage in dielectric-semiconductor interfaces. Mater. Res. Express 9, 085901 (2022)

    2022

  19. [28]

    Melitz, W. et al. Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces. Journal of Applied Physics 108, 023711 (2010)

    2010

  20. [29]

    Collins, L. et al. Time resolved surface photovoltage measurements using a big data capture approach to KPFM. Nanotechnology 29, 445703 (2018). 17

    2018

  21. [30]

    Yang, C. et al. Effects of Illumination Direction on the Surface Potential of CH3NH3PbI3 Perovskite Films Probed by Kelvin Probe Force Microscopy. ACS Appl. Mater. Interfaces 11, 14044–14050 (2019)

    2019

  22. [31]

    & Shapira, Y

    Kronik, L. & Shapira, Y . Surface photovoltage phenomena: theory, experiment, and applications. Surface Science Reports 37, 1–206 (1999)

    1999

  23. [32]

    Zhang, G. et al. Positive and Negative Effects under Light Illumination in Halide Perovskites. Small Science 4, 2400028 (2024)

    2024

  24. [33]

    Srivastava, V. et al. Study on the defect density of states in light soaking effect enhanced performance of perovskite solar cells. J. Phys. D: Appl. Phys. 52, 265302 (2019)

    2019

  25. [34]

    Zhang, G. et al. Regulating Surface Defects to Achieve More Positive Light Soaking Effect in Perovskite Solar Cells. ACS Appl. Mater. Interfaces 16, 14263– 14274 (2024)

    2024

  26. [35]

    Gillespie, S. C. et al. Excitation Intervals Enhance Performance in Perovskite Solar Cells. ACS Appl. Mater. Interfaces 17, 59476–59485 (2025)

    2025

  27. [36]

    J., Patel, J

    Knight, A. J., Patel, J. B., Snaith, H. J., Johnston, M. B. & Herz, L. M. Trap States, Electric Fields, and Phase Segregation in Mixed-Halide Perovskite Photovoltaic Devices. Advanced Energy Materials 10, 1903488 (2020)

    2020

  28. [37]

    Khenkin, M. et al. Light cycling as a key to understanding the outdoor behaviour of perovskite solar cells. Energy & Environmental Science 17, 602–610 (2024)

    2024

  29. [38]

    Bojar, A. et al. Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator- semiconductor configuration. EPJ Photovolt. 13, 18 (2022). 18

    2022

  30. [39]

    Hieulle, J. et al. Understanding and decoupling the role of wavelength and defects in light-induced degradation of metal-halide perovskites. Energy Environ. Sci. 17, 284–295 (2024)

    2024

  31. [40]

    Xiao, W. et al. Exploring Red, Green, and Blue Light-Activated Degradation of Perovskite Films and Solar Cells for Near Space Applications. Solar RRL 4, 1900394 (2020)

    2020

  32. [41]

    Prochowicz, D. et al. Blue and red wavelength resolved impedance response of efficient perovskite solar cells. Sustainable Energy Fuels 2, 2407–2411 (2018)

    2018

  33. [42]

    Woo, B. H. et al. Enhancement of sub-bandgap light absorption in perovskite semiconductor films via critical coupling. Opt. Express, OE 27, 25293–25304 (2019)

    2019

  34. [43]

    Aalbers, G. J. W. et al. Effect of sub-bandgap defects on radiative and non- radiative open-circuit voltage losses in perovskite solar cells. Nat Commun 15, 1276 (2024)

    2024

  35. [44]

    Xu, P . et al. Grain Boundaries Contribute to the Performance of Perovskite Solar Cells by Promoting Charge Separations. Nano-Micro Lett. 17, 285 (2025)

    2025

  36. [45]

    Hoque, M. N. F., He, R., Warzywoda, J. & Fan, Z. Effects of Moisture-Based Grain Boundary Passivation on Cell Performance and Ionic Migration in Organic– Inorganic Halide Perovskite Solar Cells. ACS Appl. Mater. Interfaces 10, 30322– 30329 (2018)

    2018

  37. [46]

    D., Ohkita, H., Benten, H

    Kim, H. D., Ohkita, H., Benten, H. & Ito, S. Photovoltaic Performance of Perovskite Solar Cells with Different Grain Sizes. Advanced Materials 28, 917– 922 (2016). 19

    2016

  38. [47]

    Qin, T.-X. et al. Quantification of electron accumulation at grain boundaries in perovskite polycrystalline films by correlative infrared-spectroscopic nanoimaging and Kelvin probe force microscopy. Light Sci Appl 10, 84 (2021)

    2021

  39. [48]

    L., Yu, Q

    Delor, M., Weaver, H. L., Yu, Q. & Ginsberg, N. S. Imaging material functionality through three-dimensional nanoscale tracking of energy flow. Nat. Mater. 19, 56– 62 (2020)

    2020

  40. [49]

    Nicoara, N. et al. Direct evidence for grain boundary passivation in Cu(In,Ga)Se2 solar cells through alkali-fluoride post-deposition treatments. Nat Commun 10, 3980 (2019)

    2019

  41. [50]

    & Xiao, S

    Qu, Z., Chen, J., Xue, B. & Xiao, S. Probing surfaces and interfaces of halide perovskites: from atomic mapping to optoelectronic properties. EES Solar https://doi.org/10.1039/D6EL00030D (2026) doi:10.1039/D6EL00030D

    2026 doi

  42. [51]

    Nicoara, N. et al. Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films. Sci Rep 7, 41361 (2017)

    2017

  43. [53]

    Panigrahi, S. et al. Observation of Grain Boundary Passivation and Charge Distribution in Perovskite Films Improved with Anti-solvent Treatment. J. Phys. Chem. C 126, 19367–19375 (2022)

    2022

  44. [54]

    & Ahmadi, M

    Kim, D., Higgins, K. & Ahmadi, M. Navigating grain boundaries in perovskite solar cells. Matter 4, 1442–1445 (2021)

    2021

  45. [55]

    Park, J.-S., Calbo, J., Jung, Y.-K., Whalley, L. D. & Walsh, A. Accumulation of Deep Traps at Grain Boundaries in Halide Perovskites. ACS Energy Lett. 4, 1321–1327 (2019)

    2019

Pith tools

Reviewed July 10, 2026 · model on record in the stance chip above.