REVIEW 4 cited by
Electronic anisotropy in magic-angle twisted trilayer graphene
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
read the original abstract
Due to its potential connection with nematicity, electronic anisotropy has been the subject of intense research effort on a wide variety of material platforms. The emergence of spatial anisotropy not only offers a characterization of material properties of metallic phases, which cannot be accessed via conventional transport techniques, but it also provides a unique window into the interplay between Coulomb interaction and broken symmetry underlying the electronic order. In this work, we utilize a new scheme of angle-resolved transport measurement (ARTM) to characterize electron anisotropy in magic-angle twisted trilayer graphene. By analyzing the dependence of spatial anisotropy on moir\'e band filling, temperature and twist angle, we establish the first experimental link between electron anisotropy and the cascade phenomenon, where Coulomb interaction drives a number of isospin transitions near commensurate band fillings. Furthermore, we report the coexistence between electron anisotropy and a novel electronic order that breaks both parity and time reversal symmetry. Combined, the link between electron anisotropy, cascade phenomenon and PT-symmetry breaking sheds new light onto the nature of electronic order in magic-angle graphene moir\'e systems.
Forward citations
Cited by 4 Pith papers
-
Nematic Wigner crystals in rhombohedral multilayer graphene
Projected Hartree–Fock and time-dependent Hartree–Fock calculations predict a spontaneously C3-breaking (nematic) Wigner crystal that is locally stable in a region of the rhombohedral tetralayer graphene phase diagram.
-
Theory of Electronic Nematic Criticality Constrained by Elastic Compatibility
A formalism for nemato-elasticity enforces Saint Venant compatibility via a helical basis, yielding direction-selective criticality and defect-induced random fields as universal features of crystalline systems.
-
Interplay between many-body correlations, strain and lattice relaxation in twisted bilayer graphene
Strain splitting of the flat bands plus relaxation-induced particle-hole asymmetry in a DMFT treatment of the heavy-fermion model accounts for the persistent ~10 meV STM/QTM feature, the entropy behavior, and the asym...
-
Compatible Instability: Gauge Constraints of Elasticity Inherited by Electronic Nematic Criticality
Elastic compatibility constraints bifurcate nematic fluctuations into critical compatible and gapped incompatible sectors, yielding universal direction-selective nematic criticality protected from microscopic defect strains.
Discussion (0). Sign in to comment.