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Quantized conductance and large g-factor anisotropy in InSb quantum point contacts

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arxiv 1608.05478 v1 pith:3QIP3FVK submitted 2016-08-19 cond-mat.mes-hall

classification cond-mat.mes-hall
keywords quantumg-factorinsblargeanisotropyconductancedevicesfermions
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Due to a strong spin-orbit interaction and a large Land\'e g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1|=26) and out-of-plane (|g1|=52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.

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