Paper Citation Record · LEDGER

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity

As of 13 August 2026, this Paper Citation Record lists 22 of 22 outbound references and 0 inbound Pith citation observations for arXiv:2501.00336.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2501.00336 v1

Coverage vector

measured 22 of 22 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-10T23:01:26.650002Z

measured 22 of 22 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-13T06:32:02.005865+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

22 of 22 outbound references displayed

verified exact0
verified fuzzy15
unresolved7
parse uncertain0
malformed identifier0
metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 61f70a87-31c2-4574-bd3e-82e89bd361b1 · outbound

This paper cites & Senoh, M.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity & Senoh, M

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:27.533931Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 98a7147f-33aa-4173-8922-a699a192b867 · outbound

This paper cites A., et al., Illumination with solid state lighting technology.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity A., et al., Illumination with solid state lighting technology

Reference 2

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:27.503725Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 388c8193-dac5-4ab1-a5ee-61f2c34fe9b3 · outbound

This paper cites & Ploog, K.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity & Ploog, K

Reference 3

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:27.476193Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation b9110e32-18cc-4181-b1bf-2edb9edd2289 · outbound

This paper cites & Makimoto, T.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity & Makimoto, T

Reference 4

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:27.442004Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 87e7cfe5-da35-4b02-81e4-2d49429d84ab · outbound

This paper cites & Katona, T.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity & Katona, T

Reference 5

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:27.403157Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 0cfffa2c-8614-4110-a537-e305f22f744e · outbound

This paper cites MRS Bull.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity MRS Bull

Reference 6

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:27.350562Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 241434b3-9815-4393-b321-16dcb803a257 · outbound

This paper cites Laser Photonics Rev.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity Laser Photonics Rev

Reference 7

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:27.302545Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 564ae700-80f9-40d6-9ddf-c217a8148550 · outbound

This paper cites an unresolved cited work.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity Unresolved cited work

Reference 8

Resolution: unresolved; raw_fallback, observed 2026-08-10T23:01:27.248991Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 4ee8a626-45d3-42d0-a042-a20cd1fdbb55 · outbound

This paper cites an unresolved cited work.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity Unresolved cited work

Reference 9

Resolution: unresolved; raw_fallback, observed 2026-08-10T23:01:27.211245Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation e2ee90e3-ca79-4cb3-bbf2-db55387ce967 · outbound

This paper cites an unresolved cited work.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity Unresolved cited work

Reference 10

Resolution: unresolved; raw_fallback, observed 2026-08-10T23:01:27.172133Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 396071d7-2126-4df3-b4ce-59ef6ef017dc · outbound

This paper cites Lee et al., On carrier spillover in c- and m-plane InGaN light emitting diodes Appl.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity Lee et al., On carrier spillover in c- and m-plane InGaN light emitting diodes Appl

Reference 11

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:27.140453Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 788e35f5-0d3c-4963-9095-7e5a03438200 · outbound

This paper cites an unresolved cited work.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity Unresolved cited work

Reference 12

Resolution: unresolved; raw_fallback, observed 2026-08-10T23:01:27.109596Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 596471ff-371a-478f-9196-bef2d40fc8cd · outbound

This paper cites et al., InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity et al., InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:27.073769Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 267126c8-3c62-42f1-8738-aba732005c53 · outbound

This paper cites S.et al., Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity S.et al., Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

Reference 14

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:27.032885Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation d6eca504-f241-4b2b-885c-309e7de73d3f · outbound

This paper cites an unresolved cited work.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity Unresolved cited work

Reference 16

Resolution: unresolved; raw_fallback, observed 2026-08-10T23:01:26.947623Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 7cba3b39-fccf-4fe7-9ffd-9a88d4afd390 · outbound

This paper cites an unresolved cited work.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity Unresolved cited work

Reference 17

Resolution: unresolved; raw_fallback, observed 2026-08-10T23:01:26.911192Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 469ec4e1-d588-4a11-84a2-a4ec0b512699 · outbound

This paper cites et al., Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity et al., Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

Reference 18

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:26.989889Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 8f6e098e-7a49-4277-87e8-8d9adb5e23ca · outbound

This paper cites & Bellotti, E.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity & Bellotti, E

Reference 19

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:26.864515Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation fda129da-7611-49f2-bd22-0ac485d9de4b · outbound

This paper cites V., & Koch, S.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity V., & Koch, S

Reference 20

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:26.834389Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 6a598568-0a49-4116-b2bf-a509751f2c8e · outbound

This paper cites an unresolved cited work.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity Unresolved cited work

Reference 21

Resolution: unresolved; raw_fallback, observed 2026-08-10T23:01:26.791997Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 41e5b67f-7c37-42d2-b302-36f19011697e · outbound

This paper cites et al., Surface-plasmon-enhanced light emitters based on InGaN quantum wells.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity et al., Surface-plasmon-enhanced light emitters based on InGaN quantum wells

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:26.753422Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 7bc667ae-3ecc-478a-9a6b-ff23eba15920 · outbound

This paper cites et al., Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN-based light emitting diodes.

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity et al., Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN-based light emitting diodes

Reference 23

Resolution: verified fuzzy; raw_fallback, observed 2026-08-10T23:01:26.725606Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Pith citing papers

No inbound Pith citation observations are available.