Stress modulated optical spin-injection in bulk semiconductors
classification
❄️ cond-mat.mtrl-sci
keywords
bulkstressband-structurecalculationcausescompressivedecreasedegree
read the original abstract
A full band-structure ab initio calculation of the degree of spin polarization (DSP) in stressed bulk Si and bulk GaAs is reported. For Si, we found that compressive stress causes the DSP signal peak to decrease slightly in magnitude and to shift to higher energies.
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