Carrier relaxation in Si/SiO₂ quantum dots
classification
❄️ cond-mat.mtrl-sci
keywords
opticalbeencarrierconfineddotsintrabandphononsquantum
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Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated for such transitions. The probability of intraband transition of a confined hole emitting several optical phonons is estimated.
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