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In situ TEM investigation of oxygen migration as a key mechanism for resistive switching in Pr0.7Ca0.3MnO3

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arxiv 1102.4044 v3 pith:4QX7MIYP submitted 2011-02-20 cond-mat.mes-hall

Zhaoliang Liao , Peng Gao , Xuedong Bai , Dongmin Chen This is my paper · ORCID
classification cond-mat.mes-hall
keywords pcmoelectricfieldevolutionmetalmigrationmno3modulation
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Low temperature growth Pr0.7Ca0.3MnO3 (PCMO) thin film showed high performance in electric field induced resistance switching (RS). To understand the micro-mechanism of RS in Metal/PCMO/Metal devices, structure evolution of PCMO under external electric field monitored inside transmission electron microscope (TEM) were performed. Evolution of the modulation stripe in as-grown PCMO sample was investigated when applying electric field. The new-generated modulation stripe gradually disappeared. These results indicate that oxygen ion migration plays a key role in RS.

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