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Lithographic engineering of anisotropies in (Ga,Mn)As

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arxiv cond-mat/0612439 v1 pith:5DWQPIN6 submitted 2006-12-17 cond-mat.mes-hall

S. Hümpfner , M. Sawicki , K. Pappert , J. Wenisch , K. Brunner , C. Gould , G. Schmidt , T. Dietl
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L.W. Molenkamp
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classification cond-mat.mes-hall
keywords anisotropylocallymaterialmethodallowanisotropiesappliedassociated
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The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here we present a method which provides patterning induced anisotropy which not only can be applied locally, but also dominates over the intrinsic material anisotropy at all temperatures.

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