pith. sign in

arxiv: 2605.09088 · v2 · pith:5FVQMDLYnew · submitted 2026-05-09 · ❄️ cond-mat.mes-hall

Effect of spin-dependent tunneling and intervalley scattering in magnetic-semiconductor van der Waals heterostructures on exciton and trion polarization

V.N. Mantsevich This is my paper

Pith reviewed 2026-05-20 22:15 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall
keywords van der Waals heterostructuresexcitonstrionsintervalley scatteringspin-dependent tunnelingphotoluminescence polarizationmagnetic proximity effecttransition metal dichalcogenides
0
0 comments X

The pith

In magnetic-semiconductor van der Waals stacks, the ratio of electron tunneling time to exciton and trion scattering and radiative lifetimes sets the photoluminescence polarization dynamics and enables sign reversal.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper examines valley pseudospin control in a transition metal dichalcogenide monolayer placed near a 2D magnetic layer. It attributes observed photoluminescence polarization features to the competition between spin-dependent interlayer charge transfer and intervalley scattering of excitons and trions. When tunneling occurs faster or slower than the scattering and light-emission lifetimes, the polarization either follows the circular excitation or reverses sign. This timescale comparison also supports longer-range manipulation of exciton and trion states in multilayer structures.

Core claim

The central claim is that photoluminescence polarization in TMD/magnetic van der Waals heterostructures is governed by the relative timescales of spin-dependent electron tunneling versus exciton and trion intervalley scattering and radiative decay, producing a sign switch in polarization under circularly polarized excitation and allowing generalization to bright-dark exciton processes.

What carries the argument

The ratio of electron tunneling timescale to exciton and trion intervalley scattering lifetimes and radiative lifetimes, which determines whether polarization tracks or reverses the excitation.

If this is right

  • Polarization sign switching occurs under circularly polarized laser excitation when tunneling outpaces or lags scattering and emission.
  • The model extends to include both intervalley and intravalley scattering between bright and dark excitons.
  • Long-distance control of exciton and trion behavior becomes feasible in multilayer magnetic-semiconductor stacks.
  • Effective tuning of spin and valley pseudospin follows from the same timescale balance.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Varying the magnetic-layer thickness in experiments would directly test the predicted crossover between polarization regimes.
  • The same tunneling-scattering framework could apply to other proximity-induced effects in 2D heterostructures beyond TMDs.
  • If intravalley scattering proves comparable in strength, the sign-switch threshold would shift but the overall timescale picture would remain a useful starting point.
  • Device designs aiming for valleytronic logic could exploit the polarization reversal as a built-in NOT gate for pseudospin.

Load-bearing premise

Observed photoluminescence polarization features arise mainly from spin-dependent interlayer charge transfer competing with intervalley scattering, while intravalley processes and disorder remain negligible.

What would settle it

Time-resolved photoluminescence measurements showing whether the polarization sign reverses exactly when the magnetic-layer thickness or barrier height is tuned to cross the predicted tunneling-to-lifetime ratio threshold.

Figures

Figures reproduced from arXiv: 2605.09088 by V.N. Mantsevich.

Figure 1
Figure 1. Figure 1: Scheme of the processes causing the population dyn [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: Spin polarization degree time evolution for excit [PITH_FULL_IMAGE:figures/full_fig_p004_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: Spin polarization degree time evolution for excit [PITH_FULL_IMAGE:figures/full_fig_p005_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: Spin polarization degree sign changing (solid cur [PITH_FULL_IMAGE:figures/full_fig_p006_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: The general scheme of the intervalley and intraval [PITH_FULL_IMAGE:figures/full_fig_p007_5.png] view at source ↗
Figure 5
Figure 5. Figure 5: The general scheme of the intervalley and intraval [PITH_FULL_IMAGE:figures/full_fig_p006_5.png] view at source ↗
Figure 6
Figure 6. Figure 6: A comparison of spin polarization degree time evol [PITH_FULL_IMAGE:figures/full_fig_p007_6.png] view at source ↗
read the original abstract

We present a theoretical analysis of valley pseudospin control in the transition metal dichalcogenide (TMD) monolayer by utilizing the magnetic proximity effect of 2D magnetic layer and, propose self-consistent analysis of photoluminescence (PL) polarization peculiarities in TMD/magnetic material van der Waals heterostructures. We attribute observed peculiarities to the interplay between spin-dependent interlayer charge transfer and intervalley scattering of excitons and trions. The ratio between the electron tunneling timescale and the exciton and trion intervalley scattering lifetimes and radiative lifetimes determine the PL dynamics. A possibility to switch PL polarization sign due to the quasi-particles dynamics under circularly polarized laser excitations is revealed. We also discuss generalization of the proposed model due to the careful analysis of both intervalley and intravalley scattering processes between bright and dark excitons. Obtained results allow a long-distance manipulation of exciton and trion behaviors and open the possibilities for the effective control under spin and valley pseudospin in multilayer magnetic-semiconductor van der Waals heterostructures.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

1 major / 2 minor

Summary. The manuscript develops a rate-equation model for photoluminescence (PL) polarization in TMD/magnetic-material van der Waals heterostructures. It attributes observed polarization peculiarities to the interplay of spin-dependent interlayer charge transfer and intervalley scattering of excitons and trions, with the central result that the ratio of the electron tunneling timescale to the intervalley-scattering and radiative lifetimes controls the PL dynamics and enables polarization sign reversal under circularly polarized excitation. The analysis is extended to a self-consistent treatment that incorporates both intervalley and intravalley channels between bright and dark states.

Significance. If the timescale-ratio logic holds, the work supplies a concrete mechanism for long-distance manipulation of exciton and trion valley pseudospin via magnetic proximity effects. The explicit prediction of polarization sign switching constitutes a falsifiable claim that could guide experiments in multilayer magnetic-semiconductor heterostructures.

major comments (1)
  1. The central claim rests on the statement that 'the ratio between the electron tunneling timescale and the exciton and trion intervalley scattering lifetimes and radiative lifetimes determine the PL dynamics.' Without an explicit derivation or first-principles estimate of these timescales (or a demonstration that the ratios are fixed by material parameters rather than adjusted), it remains unclear whether the model yields independent predictions or requires fitting to reproduce sign reversal.
minor comments (2)
  1. The abstract and introduction refer to a 'self-consistent analysis,' yet the precise closure condition (e.g., how the steady-state populations of bright/dark and intervalley/intravalley channels are solved simultaneously) is not stated in a single equation or algorithm box.
  2. Figure captions and the discussion of numerical results should explicitly label which curves correspond to the limiting cases of dominant tunneling versus dominant intervalley scattering.

Simulated Author's Rebuttal

1 responses · 0 unresolved

We thank the referee for the careful reading of our manuscript and the constructive feedback. We address the major comment below and have made revisions to clarify the nature of our model and its predictive aspects.

read point-by-point responses

  1. Referee: The central claim rests on the statement that 'the ratio between the electron tunneling timescale and the exciton and trion intervalley scattering lifetimes and radiative lifetimes determine the PL dynamics.' Without an explicit derivation or first-principles estimate of these timescales (or a demonstration that the ratios are fixed by material parameters rather than adjusted), it remains unclear whether the model yields independent predictions or requires fitting to reproduce sign reversal.

    Authors: We agree that our rate-equation model employs phenomenological timescales as inputs rather than deriving them from first principles within this work. The central result is nevertheless that the qualitative PL polarization dynamics, including the possibility of sign reversal under circular excitation, are controlled by the relative ordering of the electron tunneling time with respect to the intervalley scattering and radiative lifetimes. These ratios are not arbitrarily fitted; they are constrained by the physical processes (spin-dependent interlayer transfer versus valley relaxation) and can be varied systematically through material choice or heterostructure design (e.g., barrier thickness modulating tunneling). In the revised manuscript we have added a dedicated paragraph with literature-based estimates for typical TMD and 2D-magnetic-layer timescales, showing that the regime permitting sign reversal is accessible without fine-tuning to a single parameter set. This renders the predictions falsifiable and independent of exact numerical fitting for the reported qualitative features. revision: yes

Circularity Check

0 steps flagged

No significant circularity: self-contained rate-equation model

full rationale

The paper presents a theoretical rate-equation model for PL polarization in TMD/magnetic vdW heterostructures. The central result follows from solving coupled rate equations that incorporate spin-dependent tunneling rates, intervalley scattering lifetimes, and radiative lifetimes as independent input parameters. These timescales are not derived from the target PL polarization itself; instead, the model uses them to compute polarization dynamics and sign-reversal conditions. No self-definitional step, fitted-input prediction, or load-bearing self-citation chain is present in the abstract or described derivation. The treatment of bright/dark states and intervalley/intravalley channels is explicitly self-consistent within the model assumptions and does not reduce to renaming or smuggling prior results. The derivation is therefore independent of its outputs.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The model rests on standard domain assumptions about magnetic proximity and scattering processes in TMDs; no new entities are introduced and no free parameters are explicitly quantified in the abstract.

axioms (1)
  • domain assumption Magnetic proximity effect induces spin-dependent interlayer charge transfer in TMD/magnetic vdW heterostructures.
    Invoked to explain the origin of spin-dependent tunneling that competes with intervalley scattering.

pith-pipeline@v0.9.0 · 5711 in / 1206 out tokens · 45760 ms · 2026-05-20T22:15:47.790544+00:00 · methodology

Review history (2 revisions) →

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Lean theorems connected to this paper

Citations machine-checked in the Pith Canon. Every link opens the source theorem in the public Lean library.

What do these tags mean?
matches
The paper's claim is directly supported by a theorem in the formal canon.
supports
The theorem supports part of the paper's argument, but the paper may add assumptions or extra steps.
extends
The paper goes beyond the formal theorem; the theorem is a base layer rather than the whole result.
uses
The paper appears to rely on the theorem as machinery.
contradicts
The paper's claim conflicts with a theorem or certificate in the canon.
unclear
Pith found a possible connection, but the passage is too broad, indirect, or ambiguous to say the theorem truly supports the claim.

Reference graph

Works this paper leans on

78 extracted references · 78 canonical work pages

  1. [1]

    A. K. Geim, I. V . Grigorieva, V an der waals het- erostructures, Nature 499 (2013) 419-425. URL: http://dx.doi.org/10.1038/nature12385. doi:10.1038/nature12385

    work page doi:10.1038/nature12385 2013

  2. [2]

    J. F. Sierra, J. Fabian, R. K. Kawakami, S. Roche, S. O. V alenzuela, V an der waals heterostruc- tures for spintronics and opto-spintronics, Na- ture Nanotechnology 16 (2021) 856-868. URL: http://dx.doi.org/10.1038/s41565-021-00936-x . doi:10.1038/s41565-021-00936-x

    work page doi:10.1038/s41565-021-00936-x 2021

  3. [3]

    Manzeli, D

    S. Manzeli, D. Ovchinnikov, D. Pasquier, O. V . Y azyev, A. Kis, 2d transition metal dichalco- genides, Nature Reviews Materials 2 (2017). URL: http://dx.doi.org/10.1038/natrevmats.2017.33. doi:10.1038/natrevmats.2017.33

    work page doi:10.1038/natrevmats.2017.33 2017

  4. [4]

    K. F. Mak, K. He, J. Shan, T. F. Heinz, Control of valley polarization in monolayer mos2 by optical helic- ity, Nature Nanotechnology 7 (2012) 494-498. URL: http://dx.doi.org/10.1038/nnano.2012.96. doi:10.1038/nnano.2012.96

    work page doi:10.1038/nnano.2012.96 2012

  5. [5]

    Z. Y e, D. Sun, T. F. Heinz, Optical manipulation of valley pseudospin, Nature Physics 13 (2016) 26-

    work page 2016

  6. [6]

    doi:10.1038/nphys3891

    URL: http://dx.doi.org/10.1038/NPHYS3891. doi:10.1038/nphys3891

    work page doi:10.1038/nphys3891

  7. [7]

    H. Zeng, J. Dai, W . Y ao, D. Xiao, X. Cui, V alley polarization in mos2 monolayers by optical pump- ing, Nature Nanotechnology 7 (2012) 490-493. URL: http://dx.doi.org/10.1038/nnano.2012.95. doi:10.1038/nnano.2012.95

    work page doi:10.1038/nnano.2012.95 2012

  8. [8]

    G. Wang, A. Chernikov, M. M. Glazov, T. F. Heinz, X. Marie, T. Amand, B. Urbaszek, Colloquium : Excitons in atomically thin transition metal dichalco- genides, Reviews of Modern Physics 90 (2018). URL: http://dx.doi.org/10.1103/RevModPhys.90.021001. doi:10.1103/revmodphys.90.021001

    work page doi:10.1103/revmodphys.90.021001 2018

  9. [9]

    MacNeill, C

    D. MacNeill, C. Heikes, K. F. Mak, Z. Anderson, A. Kormanyos, V . Zolyomi, J. Park, D. C. Ralph, Breaking of valley degeneracy by magnetic field in mono- layer mose2, Physical Review Letters 114 (2015). URL: http://dx.doi.org/10.1103/PhysRevLett.114.037401. doi:10.1103/physrevlett.114.037401

    work page doi:10.1103/physrevlett.114.037401 2015

  10. [10]

    N. S. Maslova, I. V . Rozhansky, V . N. Mantsevich, P . I. Arseyev, N. S. Averkiev, E. Lähderanta, Dynamic spin injection into a quantum well coupled to a spin- split bound state, Physical Review B 97 (2018). URL: http://dx.doi.org/10.1103/PhysRevB.97.195445. doi:10.1103/physrevb.97.195445

    work page doi:10.1103/physrevb.97.195445 2018

  11. [11]

    V . N. Mantsevich, I. V . Rozhansky, N. S. Maslova, P . I. Arseyev, N. S. Averkiev, E. Lähderanta, Mech- anism of ultrafast spin-polarization switching in nanostructures, Physical Review B 99 (2019). URL: http://dx.doi.org/10.1103/PhysRevB.99.115307. doi:10.1103/physrevb.99.115307

    work page doi:10.1103/physrevb.99.115307 2019

  12. [12]

    Scharf, G

    B. Scharf, G. Xu, A. Matos-Abiague, I. Zu- tic, Magnetic proximity e ffects in transition- metal dichalcogenides: Converting excitons, Physical Review Letters 119 (2017). URL: http://dx.doi.org/10.1103/PhysRevLett.119.127403. doi:10.1103/physrevlett.119.127403

    work page doi:10.1103/physrevlett.119.127403 2017

  13. [13]

    Zhong, K

    D. Zhong, K. L. Seyler, X. Linpeng, R. Cheng, N. Sivadas, B. Huang, E. Schmidgall, T. Taniguchi, K. Watanabe, M. A. McGuire, W . Y ao, D. Xiao, K.-M. C. Fu, X. Xu, V an der waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics, Science Advances 3 (2017). URL: http://dx.doi.org/10.1126/sciadv.1603113. doi:10.1126/scia...

    work page doi:10.1126/sciadv.1603113 2017

  14. [14]

    Huang, G

    B. Huang, G. Clark, D. R. Klein, D. MacNeill, E. Navarro- Moratalla, K. L. Seyler, N. Wilson, M. A. McGuire, D. H. Cobden, D. Xiao, W . Y ao, P . Jarillo-Herrero, X. Xu, Electrical control of 2d magnetism in bilayer cri3, Nature Nanotechnology 13 (2018) 544-548. URL: http://dx.doi.org/10.1038/s41565-018-0121-3 . doi:10.1038/s41565-018-0121-3

    work page doi:10.1038/s41565-018-0121-3 2018

  15. [15]

    C. Gong, X. Zhang, Two-dimensional magnetic crystals and emergent heterostruc- ture devices, Science 363 (2019). URL: http://dx.doi.org/10.1126/science.aav4450. doi:10.1126/science.aav4450

    work page doi:10.1126/science.aav4450 2019

  16. [16]

    K. S. Burch, D. Mandrus, J.-G. Park, Mag- netism in two-dimensional van der waals ma- terials, Nature 563 (2018) 47-52. URL: http://dx.doi.org/10.1038/s41586-018-0631-z . doi:10.1038/s41586-018-0631-z

    work page doi:10.1038/s41586-018-0631-z 2018

  17. [17]

    Gibertini, M

    M. Gibertini, M. Koperski, A. F. Morpurgo, K. S. Novoselov, Magnetic 2d materials and heterostructures, Nature Nanotechnology 14 (2019) 408-419. URL: http://dx.doi.org/10.1038/s41565-019-0438-6 . doi:10.1038/s41565-019-0438-6

    work page doi:10.1038/s41565-019-0438-6 2019

  18. [18]

    C. Gong, L. Li, Z. Li, H. Ji, A. Stern, Y . Xia, T. Cao, W . Bao, C. Wang, Y . Wang, Z. Q. Qiu, R. J. Cava, S. G. Louie, J. Xia, X. Zhang, Discov- ery of intrinsic ferromagnetism in two-dimensional van der waals crystals, Nature 546 (2017) 265-269. URL: http://dx.doi.org/10.1038/nature22060. doi:10.1038/nature22060

    work page doi:10.1038/nature22060 2017

  19. [19]

    Sivadas, M

    N. Sivadas, M. W . Daniels, R. H. Swendsen, S. Okamoto, D. Xiao, Magnetic ground state of semiconducting transition-metal trichalcogenide monolayers, Physical Review B 91 (2015). URL: http://dx.doi.org/10.1103/PhysRevB.91.235425. doi:10.1103/physrevb.91.235425. 8

    work page doi:10.1103/physrevb.91.235425 2015

  20. [20]

    Zhang, Q

    W .-B. Zhang, Q. Qu, P . Zhu, C.-H. Lam, Robust intrinsic ferromagnetism and half semiconductivity in stable two-dimensional single-layer chromium trihalides , Journal of Materials Chemistry C 3 (2015) 12457-12468. URL: http://dx.doi.org/10.1039/C5TC02840J. doi:10.1039/c5tc02840j

    work page doi:10.1039/c5tc02840j 2015

  21. [21]

    X. Wang, K. Du, Y . Y . Fredrik Liu, P . Hu, J. Zhang, Q. Zhang, M. H. S. Owen, X. Lu, C. K. Gan, P . Sengupta, C. Kloc, Q. Xiong, Raman spectroscopy of atomically thin two-dimensional magnetic iron phosphorus trisulfide ( f eps3) crystals, 2D Materials 3 (2016) 031009. URL: http://dx.doi.org/10.1088/2053-1583/3/3/031009. doi:10.1088/2053-1583/3/3/031009

    work page doi:10.1088/2053-1583/3/3/031009 2016

  22. [22]

    Bonilla, S

    M. Bonilla, S. Kolekar, Y . Ma, H. C. Diaz, V . Kalap- pattil, R. Das, T. Eggers, H. R. Gutierrez, M.-H. Phan, M. Batzill, Strong room-temperature ferromag- netism in vse2 monolayers on van der waals substrates, Nature Nanotechnology 13 (2018) 289-293. URL: http://dx.doi.org/10.1038/s41565-018-0063-9 . doi:10.1038/s41565-018-0063-9

    work page doi:10.1038/s41565-018-0063-9 2018

  23. [23]

    D. J. OHara, T. Zhu, A. H. Trout, A. S. Ahmed, Y . K. Luo, C. H. Lee, M. R. Brenner, S. Rajan, J. A. Gupta, D. W . McComb, R. K. Kawakami, Room temperature intrinsic ferromagnetism in epi- taxial manganese selenide films in the monolayer limit, Nano Letters 18 (2018) 3125-3131. URL: http://dx.doi.org/10.1021/acs.nanolett.8b00683. doi:10.1021/acs.nanolett.8b00683

    work page doi:10.1021/acs.nanolett.8b00683 2018

  24. [24]

    Z. Fei, B. Huang, P . Malinowski, W . Wang, T. Song, J. Sanchez, W . Y ao, D. Xiao, X. Zhu, A. F. May, W . Wu, D. H. Cobden, J.-H. Chu, X. Xu, Two- dimensional itinerant ferromagnetism in atomically thin f e3gete2, Nature Materials 17 (2018) 778-782. URL: http://dx.doi.org/10.1038/s41563-018-0149-7 . doi:10.1038/s41563-018-0149-7

    work page doi:10.1038/s41563-018-0149-7 2018

  25. [25]

    X. Li, J. Y ang, crxte 3(x = si, ge) nanosheets: two dimensional intrinsic ferromagnetic semiconductors, Journal of Materials Chemistry C 2 (2014) 7071. URL: http://dx.doi.org/10.1039/C4TC01193G. doi:10.1039/c4tc01193g

    work page doi:10.1039/c4tc01193g 2014

  26. [26]

    D. I. Markina, P . Mondal, L. Krelle, S. Shradha, M. M. Glazov, R. von Klitzing, K. Mosina, Z. Sofer, B. Ur- baszek, Interplay of vibrational, electronic, and magneti c states in crsbr, npj Quantum Materials 11 (2026). URL: http://dx.doi.org/10.1038/s41535-026-00850-2 . doi:10.1038/s41535-026-00850-2

    work page doi:10.1038/s41535-026-00850-2 2026

  27. [27]

    Göser, W

    O. Göser, W . Paul, H. Kahle, Magnetic prop- erties of crsbr, Journal of Magnetism and Magnetic Materials 92 (1990) 129-136. URL: http://dx.doi.org/10.1016/0304-8853(90)90689-N. doi:10.1016/0304-8853(90)90689-n

    work page doi:10.1016/0304-8853(90)90689-n 1990

  28. [28]

    X. Xu, W . Y ao, D. Xiao, T. F. Heinz, Spin and pseudospins in layered transition metal dichalco- genides, Nature Physics 10 (2014) 343-350. URL: http://dx.doi.org/10.1038/nphys2942. doi:10.1038/nphys2942

    work page doi:10.1038/nphys2942 2014

  29. [29]

    Q. Tong, M. Chen, W . Y ao, Magnetic prox- imity e ffect in a van der waals moire superlat- tice, Physical Review Applied 12 (2019). URL: http://dx.doi.org/10.1103/PhysRevApplied.12.024031. doi:10.1103/physrevapplied.12.024031

    work page doi:10.1103/physrevapplied.12.024031 2019

  30. [30]

    J. Choi, C. Lane, J.-X. Zhu, S. A. Crooker, Asymmetric magnetic proximity interactions in mose2/ crbr3 van der waals heterostructures, Nature Materials 22 (2022) 305-310. URL: http://dx.doi.org/10.1038/s41563-022-01424-w . doi:10.1038/s41563-022-01424-w

    work page doi:10.1038/s41563-022-01424-w 2022

  31. [31]

    Ciorciaro, M

    L. Ciorciaro, M. Kroner, K. Watanabe, T. Taniguchi, A. Imamoglu, Observation of magnetic proxim- ity e ffect using resonant optical spectroscopy of an electrically tunable mose2/ crbr3 heterostruc- ture, Physical Review Letters 124 (2020). URL: http://dx.doi.org/10.1103/PhysRevLett.124.197401. doi:10.1103/physrevlett.124.197401

    work page doi:10.1103/physrevlett.124.197401 2020

  32. [32]

    K. L. Seyler, D. Zhong, B. Huang, X. Linpeng, N. P . Wilson, T. Taniguchi, K. Watanabe, W . Y ao, D. Xiao, M. A. McGuire, K.-M. C. Fu, X. Xu, V alley manipulation by optically tuning the mag- netic proximity e ffect in wse2/ cri3 heterostruc- tures, Nano Letters 18 (2018) 3823-3828. URL: http://dx.doi.org/10.1021/acs.nanolett.8b01105. doi:10.1021/acs.nanol...

    work page doi:10.1021/acs.nanolett.8b01105 2018

  33. [33]

    Zhong, K

    D. Zhong, K. L. Seyler, X. Linpeng, N. P . Wilson, T. Taniguchi, K. Watanabe, M. A. McGuire, K.-M. C. Fu, D. Xiao, W . Y ao, X. Xu, Layer-resolved magnetic proximity e ffect in van der waals heterostructures, Nature Nanotechnology 15 (2020) 187-191. URL: http://dx.doi.org/10.1038/s41565-019-0629-1 . doi:10.1038/s41565-019-0629-1

    work page doi:10.1038/s41565-019-0629-1 2020

  34. [34]

    T. P . Lyons, D. Gillard, A. Molina-Sanchez, A. Misra, F. Withers, P . S. Keatley, A. Kozikov, T. Taniguchi, K. Watanabe, K. S. Novoselov, J. Fernandez- Rossier, A. I. Tartakovskii, Interplay between spin proximity e ffect and charge-dependent exciton dy- namics in mose2/ crbr3 van der waals heterostruc- tures, Nature Communications 11 (2020). URL: http://...

    work page doi:10.1038/s41467-020-19816-4 2020

  35. [35]

    Zhang, S

    T. Zhang, S. Zhao, A. Wang, Z. Xiong, Y . Liu, M. Xi, S. Li, H. Lei, Z. V . Han, F. Wang, Electrically and magnetically tunable valley polarization in monolayer mose2 proximitized by a 2d ferromagnetic semiconduc- tor, Advanced Functional Materials 32 (2022). URL: 9 http://dx.doi.org/10.1002/adfm.202204779. doi:10.1002/adfm.202204779

    work page doi:10.1002/adfm.202204779 2022

  36. [36]

    G.-Y . Hong, S. Zhao, F. Jin, L. Liu, L. Y ang, Q. Zhang, M. Tan, K. Li, C. Hu, H.-B. Sun, L. Lin, Asym- metric valley polarization of excitons and trions in antiferromagnet-semiconductor mose2/ cri3 heterostruc- tures, ACS Nano 19 (2025) 34880-34889. URL: http://dx.doi.org/10.1021/acsnano.5c10756. doi:10.1021/acsnano.5c10756

    work page doi:10.1021/acsnano.5c10756 2025

  37. [37]

    Huang, Z

    X. Huang, Z. Song, Y . Gao, P . Gu, K. Watan- abe, T. Taniguchi, S. Y ang, Z. Chen, Y . Y e, In- trinsic localized excitons in mose2/ crsbr het- erostructure, Advanced Materials 37 (2024). URL: http://dx.doi.org/10.1002/adma.202413438. doi:10.1002/adma.202413438

    work page doi:10.1002/adma.202413438 2024

  38. [38]

    W . Wu, M. Liu, J. Zhou, J. Li, Y . Zhang, F. Xu, X. Li, Y . Wu, Z. Wu, J. Kang, Chirality-dependent valley polarization in magnetic van der waals heterostructures via spin-selective charge trans- fer, Nano Letters 24 (2024) 6225-6232. URL: http://dx.doi.org/10.1021/acs.nanolett.4c00503. doi:10.1021/acs.nanolett.4c00503

    work page doi:10.1021/acs.nanolett.4c00503 2024

  39. [39]

    J. Dang, T. Wu, S. Y an, K. Watanabe, T. Taniguchi, H. Lei, X.-X. Zhang, Electrical switching of spin-polarized light-emitting diodes based on a 2d cri3/ hbn/ wse2 het- erostructure, Nature Communications 15 (2024). URL: http://dx.doi.org/10.1038/s41467-024-51287-9 . doi:10.1038/s41467-024-51287-9

    work page doi:10.1038/s41467-024-51287-9 2024

  40. [40]

    Kioseoglou, A

    G. Kioseoglou, A. T. Hanbicki, M. Currie, A. L. Friedman, D. Gunlycke, B. T. Jonker, V alley po- larization and intervalley scattering in monolayer mos2, Applied Physics Letters 101 (2012) 221907. URL: http://dx.doi.org/10.1063/1.4768299. doi:10.1063/1.4768299

    work page doi:10.1063/1.4768299 2012

  41. [41]

    Surrente, L

    A. Surrente, L. Klopotowski, N. Zhang, M. Baranowski, A. A. Mitioglu, M. V . Ballottin, P . C. Christianen, D. Dumcenco, Y .-C. Kung, D. K. Maude, A. Kis, P . Plochocka, Intervalley scattering of interlayer ex- citons in a mos2/ mose2/ mos2 heterostructure in high magnetic field, Nano Letters 18 (2018) 3994-4000. URL: http://dx.doi.org/10.1021/acs.nanolett...

    work page doi:10.1021/acs.nanolett.8b01484 2018

  42. [42]

    C. Mai, A. Barrette, Y . Y u, Y . G. Semenov, K. W . Kim, L. Cao, K. Gundogdu, Many-body e ffects in valleytronics: Direct measurement of valley lifetimes in single-layer mos2, Nano Letters 14 (2013) 202-

    work page 2013

  43. [43]

    doi:10.1021/nl403742j

    URL: http://dx.doi.org/10.1021/nl403742j. doi:10.1021/nl403742j

    work page doi:10.1021/nl403742j

  44. [44]

    T. Y u, M. W . Wu, V alley depolarization due to intervalley and intravalley electron-hole exchange interactions in monolayer mos2, Physical Review B 89 (2014). URL: http://dx.doi.org/10.1103/PhysRevB.89.205303. doi:10.1103/physrevb.89.205303

    work page doi:10.1103/physrevb.89.205303 2014

  45. [45]

    Molina-Sanchez, D

    A. Molina-Sanchez, D. Sangalli, L. Wirtz, A. Marini, Ab initio calculations of ultrashort carrier dynamics in two- dimensional materials: V alley depolarization in single- layer wse2, Nano Letters 17 (2017) 4549-4555. URL: http://dx.doi.org/10.1021/acs.nanolett.7b00175. doi:10.1021/acs.nanolett.7b00175

    work page doi:10.1021/acs.nanolett.7b00175 2017

  46. [46]

    B. R. Carvalho, Y . Wang, S. Mignuzzi, D. Roy, M. Ter- rones, C. Fantini, V . H. Crespi, L. M. Malard, M. A. Pimenta, Intervalley scattering by acoustic phonons in two-dimensional mos2 revealed by double-resonance raman spectroscopy, Nature Communications 8 (2017). URL: http://dx.doi.org/10.1038/ncomms14670. doi:10.1038/ncomms14670

    work page doi:10.1038/ncomms14670 2017

  47. [47]

    Miller, J

    B. Miller, J. Lindlau, M. Bommert, A. Neumann, H. Y amaguchi, A. Holleitner, A. Högele, U. Wurstbauer, Tuning the fröhlich exciton-phonon scattering in mono- layer mos2, Nature Communications 10 (2019). URL: http://dx.doi.org/10.1038/s41467-019-08764-3 . doi:10.1038/s41467-019-08764-3

    work page doi:10.1038/s41467-019-08764-3 2019

  48. [48]

    Jiang, Q

    X. Jiang, Q. Zheng, Z. Lan, W . A. Saidi, X. Ren, J. Zhao, Real-time gw-bse investigations on spin- valley exciton dynamics in monolayer transition metal dichalcogenide, Science Advances 7 (2021). URL: http://dx.doi.org/10.1126/sciadv.abf3759. doi:10.1126/sciadv.abf3759

    work page doi:10.1126/sciadv.abf3759 2021

  49. [49]

    Bergmann-Iwe, S

    A. Bergmann-Iwe, S. Deb, K. Zollner, V . Schneidt, M. Hemaid, K. Watanabe, T. Taniguchi, R. Schwartz, J. Fabian, T. Korn, Effect of spin-dependent tunneling in a mose2/ cr2ge2te6 van der waals heterostructure on exciton and trion emission, Physical Review Applied 24 (2025). URL: http://dx.doi.org/10.1103/km88-dxsb. doi:10.1103/km88-dxsb

    work page doi:10.1103/km88-dxsb 2025

  50. [50]

    N. P . Wilson, K. Lee, J. Cenker, K. Xie, A. H. Dis- mukes, E. J. Telford, J. Fonseca, S. Sivakumar, C. Dean, T. Cao, X. Roy, X. Xu, X. Zhu, Interlayer electronic coupling on demand in a 2d magnetic semiconduc- tor, Nature Materials 20 (2021) 1657-1662. URL: http://dx.doi.org/10.1038/s41563-021-01070-8 . doi:10.1038/s41563-021-01070-8

    work page doi:10.1038/s41563-021-01070-8 2021

  51. [51]

    Serati de Brito, P

    C. Serati de Brito, P . E. Faria Junior, T. S. Ghiasi, J. Ingla-A ynes, C. R. Rabahi, C. Cavalini, F. Dirn- berger, S. Manas-V alero, K. Watanabe, T. Taniguchi, K. Zollner, J. Fabian, C. Schüller, H. S. J. van der Zant, Y . G. Gobato, Charge transfer and asymmet- ric coupling of mose2 valleys to the magnetic order of crsbr, Nano Letters 23 (2023) 11073-11...

    work page doi:10.1021/acs.nanolett.3c03431 2023

  52. [52]

    M. Onga, Y . Sugita, T. Ideue, Y . Nakagawa, R. Suzuki, Y . Motome, Y . Iwasa, Antiferromagnet- semiconductor van der waals heterostructures: Interlayer interplay of exciton with magnetic or- dering, Nano Letters 20 (2020) 4625-4630. URL: http://dx.doi.org/10.1021/acs.nanolett.0c01493. doi:10.1021/acs.nanolett.0c01493

    work page doi:10.1021/acs.nanolett.0c01493 2020

  53. [53]

    V . M. Bermudez, D. S. McClure, Spectroscopic studies of the two-dimensional magnetic insulators chromium trichloride and chromium tribromide, Journal of Physics and Chemistry of Solids 40 (1979) 129-147. URL: http://dx.doi.org/10.1016/0022-3697(79)90030-1. doi:10.1016/0022-3697(79)90030-1

    work page doi:10.1016/0022-3697(79)90030-1 1979

  54. [54]

    Dillon, H

    J. Dillon, H. Kamimura, J. Remeika, Magneto- optical properties of ferromagnetic chromium trihalides, Journal of Physics and Chem- istry of Solids 27 (1966) 1531-1549. URL: http://dx.doi.org/10.1016/0022-3697(66)90148-X. doi:10.1016/0022-3697(66)90148-x

    work page doi:10.1016/0022-3697(66)90148-x 1966

  55. [55]

    Terres, L

    S. Terres, L. Scalon, J. Brunner, D. Horneber, J. Düreth , S. Huang, T. Taniguchi, K. Watanabe, A. F. Nogueira, S. Höfling, S. Klembt, Y . V aynzof, A. Chernikov, Exciton di ffusion in two-dimentional chiral per- ovskites, Advanced Optical Materials 13 (2025). URL: http://dx.doi.org/10.1002/adom.202402606. doi:10.1002/adom.202402606

    work page doi:10.1002/adom.202402606 2025

  56. [56]

    F. T. Rabouw, M. Kamp, R. J. A. van Dijk-Moes, D. R. Gamelin, A. F. Koenderink, A. Meijerink, D. V anmaekelbergh, Delayed exciton emis- sion and its relation to blinking in cdse quantum dots, Nano Letters 15 (2015) 7718-7725. URL: http://dx.doi.org/10.1021/acs.nanolett.5b03818. doi:10.1021/acs.nanolett.5b03818

    work page doi:10.1021/acs.nanolett.5b03818 2015

  57. [57]

    A. A. Kurilovich, V . N. Mantsevich, K. J. Steven- son, A. V . Chechkin, V . V . Palyulin, Complex diffusion-based kinetics of photoluminescence in semiconductor nanoplatelets, Physical Chem- istry Chemical Physics 22 (2020) 24686-24696. URL: http://dx.doi.org/10.1039/d0cp03744c. doi:10.1039/d0cp03744c

    work page doi:10.1039/d0cp03744c 2020

  58. [58]

    A. A. Kurilovich, V . N. Mantsevich, Y . Mardoukhi, K. J. Stevenson, A. V . Chechkin, V . V . Palyulin, Non-markovian di ffusion of excitons in layered per- ovskites and transition metal dichalcogenides, Physical Chemistry Chemical Physics 24 (2022) 13941-13950. URL: http://dx.doi.org/10.1039/d2cp00557c. doi:10.1039/d2cp00557c

    work page doi:10.1039/d2cp00557c 2022

  59. [59]

    Steinho ff, E

    A. Steinho ff, E. Wietek, M. Florian, T. Schulz, T. Taniguchi, K. Watanabe, S. Zhao, A. Högele, F. Jahnke, A. Chernikov, Exciton-exciton interactions in van der waals heterobilayers, Physical Review X 14 (2024). URL: http://dx.doi.org/10.1103/PhysRevX.14.031025. doi:10.1103/physrevx.14.031025

    work page doi:10.1103/physrevx.14.031025 2024

  60. [60]

    Kumar, Q

    N. Kumar, Q. Cui, F. Ceballos, D. He, Y . Wang, H. Zhao, Exciton-exciton annihilation in mose 2 monolayers, Physical Review B 89 (2014). URL: http://dx.doi.org/10.1103/PhysRevB.89.125427. doi:10.1103/physrevb.89.125427

    work page doi:10.1103/physrevb.89.125427 2014

  61. [61]

    H. Zhao, B. Dal Don, S. Moehl, H. Kalt, K. Ohkawa, D. Hommel, Spatiotemporal dynamics of quantum- well excitons, Physical Review B 67 (2003). URL: http://dx.doi.org/10.1103/PhysRevB.67.035306. doi:10.1103/physrevb.67.035306

    work page doi:10.1103/physrevb.67.035306 2003

  62. [62]

    O. P . Adejumobi, V . N. Mantsevich, V . V . Pa- lyulin, Di ffusion of fast and slow excitons with an exchange in quasi-two-dimensional sys- tems, Physical Review E 110 (2024). URL: http://dx.doi.org/10.1103/PhysRevE.110.054139. doi:10.1103/physreve.110.054139

    work page doi:10.1103/physreve.110.054139 2024

  63. [63]

    N. S. Maslova, V . N. Mantsevich, P . I. Ar- seyev, Exciton transport in atomically flat het- erostructures: The appearance of negative dif- fusivity, Physical Review E 112 (2025). URL: http://dx.doi.org/10.1103/cbyp-h4kw. doi:10.1103/cbyp-h4kw

    work page doi:10.1103/cbyp-h4kw 2025

  64. [64]

    A. A. Kurilovich, V . N. Mantsevich, A. V . Chechkin, V . V . Palyulin, Negative di ffusion of excitons in quasi-two-dimensional systems, Physical Chem- istry Chemical Physics 26 (2024) 922-935. URL: http://dx.doi.org/10.1039/d3cp03521b. doi:10.1039/d3cp03521b

    work page doi:10.1039/d3cp03521b 2024

  65. [65]

    Korenev, I

    V . Korenev, I. Akimov, S. Zaitsev, V . Sapega, L. Langer, D. Y akovlev, Y . A. Danilov, M. Bayer, Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hy- brid, Nature Communications 3 (2012). URL: http://dx.doi.org/10.1038/ncomms1957. doi:10.1038/ncomms1957

    work page doi:10.1038/ncomms1957 2012

  66. [66]

    Zipfel, K

    J. Zipfel, K. Wagner, M. A. Semina, J. D. Ziegler, T. Taniguchi, K. Watanabe, M. M. Glazov, A. Chernikov, Electron recoil e ffect in electrically tunable Mose 2 monolayers, Physical Review B 105 (2022). URL: http://dx.doi.org/10.1103/PhysRevB.105.075311. doi:10.1103/physrevb.105.075311

    work page doi:10.1103/physrevb.105.075311 2022

  67. [67]

    V enanzi, M

    T. V enanzi, M. Cuccu, R. Perea-Causin, X. Sun, S. Brem, D. Erkensten, T. Taniguchi, K. Watanabe, E. Malic, M. Helm, S. Winnerl, A. Chernikov, Ul- trafast switching of trions in 2d materials by terahertz photons, Nature Photonics 18 (2024) 1344-1349. URL: http://dx.doi.org/10.1038/s41566-024-01512-0 . doi:10.1038/s41566-024-01512-0

    work page doi:10.1038/s41566-024-01512-0 2024

  68. [68]

    Mourzidis, V

    K. Mourzidis, V . Jindal, M. Glazov, A. Balocchi, C. Robert, D. Lagarde, P . Renucci, L. Lombez, T. Taniguchi, K. Watanabe, T. Amand, S. Francoeur, X. Marie, Exciton formation in two-dimensional 11 semiconductors, Physical Review X 15 (2025). URL: http://dx.doi.org/10.1103/66rj-jbqw. doi:10.1103/66rj-jbqw

    work page doi:10.1103/66rj-jbqw 2025

  69. [69]

    Ceballos, Q

    F. Ceballos, Q. Cui, M. Z. Bellus, H. Zhao, Ex- citon formation in monolayer transition metal dichalcogenides, Nanoscale 8 (2016) 11681-11688. URL: http://dx.doi.org/10.1039/C6NR02516A. doi:10.1039/c6nr02516a

    work page doi:10.1039/c6nr02516a 2016

  70. [70]

    T. Cao, G. Wang, W . Han, H. Y e, C. Zhu, J. Shi, Q. Niu, P . Tan, E. Wang, B. Liu, J. Feng, V alley- selective circular dichroism of monolayer molybde- num disulphide, Nature Communications 3 (2012). URL: http://dx.doi.org/10.1038/ncomms1882. doi:10.1038/ncomms1882

    work page doi:10.1038/ncomms1882 2012

  71. [71]

    Lagarde, L

    D. Lagarde, L. Bouet, X. Marie, C. R. Zhu, B. L. Liu, T. Amand, P . H. Tan, B. Urbaszek, Carrier and polarization dynamics in monolayer mos2, Physical Review Letters 112 (2014). URL: http://dx.doi.org/10.1103/PhysRevLett.112.047401. doi:10.1103/physrevlett.112.047401

    work page doi:10.1103/physrevlett.112.047401 2014

  72. [72]

    Merkl, F

    P . Merkl, F. Mooshammer, P . Steinleitner, A. Girnghuber, K.-Q. Lin, P . Nagler, J. Holler, C. Schüller, J. M. Lupton, T. Korn, S. Ovesen, S. Brem, E. Malic, R. Huber, Ultrafast transition between exciton phases in van der waals het- erostructures, Nature Materials 18 (2019) 691-696. URL: http://dx.doi.org/10.1038/s41563-019-0337-0 . doi:10.1038/s41563-0...

    work page doi:10.1038/s41563-019-0337-0 2019

  73. [73]

    S. Das, A. Prakash, R. Salazar, J. Appen- zeller, Toward low-power electronics: Tun- neling phenomena in transition metal dichalco- genides, ACS Nano 8 (2014) 1681-1689. URL: http://dx.doi.org/10.1021/nn406603h. doi:10.1021/nn406603h

    work page doi:10.1021/nn406603h 2014

  74. [74]

    Z. Zhao, L. Ma, M. Men, W . Li, X. Wang, All two-dimensional van der waals magnetic tunnel- ing junctions, Applied Physics Reviews 12 (2025). URL: http://dx.doi.org/10.1063/5.0279573. doi:10.1063/5.0279573

    work page doi:10.1063/5.0279573 2025

  75. [75]

    C. R. Zhu, K. Zhang, M. Glazov, B. Urbaszek, T. Amand, Z. W . Ji, B. L. Liu, X. Marie, Exci- ton valley dynamics probed by kerr rotation in wse 2 monolayers, Physical Review B 90 (2014). URL: http://dx.doi.org/10.1103/PhysRevB.90.161302. doi:10.1103/physrevb.90.161302

    work page doi:10.1103/physrevb.90.161302 2014

  76. [76]

    Wietek, M

    E. Wietek, M. Florian, J. Göser, T. Taniguchi, K. Watanabe, A. Högele, M. M. Glazov, A. Stein- hoff, A. Chernikov, Nonlinear and negative e ffective diffusivity of interlayer excitons in moirefree heter- obilayers, Physical Review Letters 132 (2024). URL: http://dx.doi.org/10.1103/PhysRevLett.132.016202. doi:10.1103/physrevlett.132.016202

    work page doi:10.1103/physrevlett.132.016202 2024

  77. [77]

    Bertoni, C

    R. Bertoni, C. Nicholson, L. Waldecker, H. Hübener, C. Monney, U. De Giovannini, M. Puppin, M. Hoesch, E. Springate, R. Chapman, C. Ca- cho, M. Wolf, A. Rubio, R. Ernstorfer, Gener- ation and evolution of spin-, valley-, and layer- polarized excited carriers in inversion-symmetric wse2, Physical Review Letters 117 (2016). URL: http://dx.doi.org/10.1103/Ph...

    work page doi:10.1103/physrevlett.117.277201 2016

  78. [78]

    F. Liu, Q. Li, X.-Y . Zhu, Direct determina- tion of momentum-resolved electron transfer in the photoexcited van der waals heterobilayer ws2/ mos2, Physical Review B 101 (2020). URL: http://dx.doi.org/10.1103/PhysRevB.101.201405. doi:10.1103/physrevb.101.201405. 12

    work page doi:10.1103/physrevb.101.201405 2020