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Tuning Ultra-Narrow Direct Bandgap in alpha-Sn Nanocrystals: A CMOS-Compatible Approach for THz Applications

T0 review · 4 major / 5 minor · reviewed 2026-08-07 · deepseek-v4-flash

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Pith's one-line read Microwave irradiation of tin nanoparticles on silicon stabilizes alpha-tin cores and opens a size-tunable direct bandgap of 64-137 meV, interpreted as weak quantum confinement.

desk verdict The synthesis and phase stabilization are real, but the quantum-confinement fit is numerically inconsistent with the paper's own parameters, so the size-tuning claim needs major rework. read the letter →

arxiv 2505.21440 v1 pith:6ESK3YT3 submitted 2025-05-27 cond-mat.mtrl-sci

Tiziano Bertoli , Elena Stellino , Francesco Minati , Camilla Belloni , Giovanni Tomassucci , Emanuele Bosco , Silvano Battisti , Leonardo Puppulin
show 9 more authors
Demetrio Logoteta Alessandro Nucara Luisa Barba Gaetano Campi Naurang Lal Saini Fabrizio Palma Michele Back Pietro Riello Fernanda Irrera
This is my paper
classification cond-mat.mtrl-sci PACS 78.67.Bf81.07.-b
keywords alpha-tingreytinnanocrystalsquantumconfinementTHzbandgapCMOS-compatibleprocessSnO2shellTaucplot
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper claims that ordinary tin films on silicon, baked and then exposed to microwaves, break into nanoparticles whose cores crystallize as $\alpha$-Sn, the cubic grey-tin phase normally stable only below 13 °C, and whose SnO2 shell holds that phase at room temperature. Synchrotron grazing-incidence X-ray diffraction shows the cubic $\alpha$-Sn lattice, X-ray photoemission shows a suppressed density of states at the Fermi level, and infrared transmission spectra with Tauc-plot extrapolation give direct bandgaps of 64, 79, and 137 meV for average particle diameters of about 20, 17, and 14 nm. Because the gap widens as the particles shrink, the authors attribute the effect to weak quantum confinement of an electron-hole pair in the $\alpha$-Sn core. If correct, this is a CMOS-compatible route to silicon-integrated devices in the 15-35 THz window, a range where conventional electronics and photonics are weak.

What carries the argument

The load-bearing object is the $\alpha$-Sn/SnO2 core-shell nanoparticle made by the four-step process: physical vapor deposition of tin, baking to 400 °C, cooling to 200 °C, and 450 W microwave irradiation in argon. The gap extraction uses the Tauc relation $(OD \cdot h\nu)^2 = B(h\nu - E_g)$ on far-infrared transmission spectra, and the size dependence is interpreted with the weak-confinement exciton formula $E_{QD} = E_{bulk} + \hbar^2\pi^2/(2R^2)(1/m_e^* + 1/m_h^*) - 1.786 e^2/(\epsilon R)$, where $R$ is the $\alpha$-Sn core radius and $\epsilon=14$ accounts for reduced screening imposed by the SnO2 shell. The proposed stabilization mechanism is the SnO-to-SnO2 shell transformation, whose volume contraction induces tensile stress that stabilizes the larger-volume $\alpha$-Sn core.

What would settle it

Cut the Sn4_MW, Sn5_MW, and Sn9_MW particles in cross-section and measure the SnO2 shell thickness particle by particle with electron microscopy. If the shell is not close to 4.6 nm, or varies with particle diameter, the core radii used in the quantum-confinement fit are wrong and the claimed size dependence of the bandgap collapses.

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Extended reading notes

Core claim

The central claim is that the microwave step does two jobs at once: it drives dewetting and coalescence so that nanoparticle size is set by the deposited tin film thickness, and it converts the shell material from SnO toward crystalline SnO2, whose volume contraction pulls on the metallic core and favors the expanded $\alpha$-Sn phase. The resulting core-shell particles show a direct optical absorption edge in the far infrared. The authors extract gaps of 64±2 meV, 79±2 meV, and 137±4 meV for the Sn9, Sn5, and Sn4 samples and fit them with the weak-confinement formula using density-functional-theory effective masses (electron about 0.04 $m_0$, hole about 0.2 $m_0$), an effective dielectric constant of 14, and core radii obtained by subtracting a fixed 4.6 nm oxide shell from the measured radii. The measured points lie close to the predicted $E_{QD}(R)$ curve, supporting a size-tuned bandgap across 15-35 THz.

Load-bearing premise

The size-tuning claim rests on assuming every nanoparticle has the same 4.6 nm thick SnO2 shell, so measured diameters can be converted into alpha-Sn core radii; that shell thickness is taken from a different synthesis and is never measured in these samples.

Editorial extensions

If this is right

  • If the claim holds, the 15-35 THz operating window can be positioned by choosing the deposited tin thickness, since average nanoparticle diameter scales nearly linearly with film thickness.
  • The process runs on lightly doped, heavily doped, and intrinsic silicon and on SiO2-covered wafers, so it can be inserted into existing silicon fabrication flows without InSb substrates or epitaxial growth.
  • The SnO2-shell stabilization route makes shell oxidation and crystallinity a second control knob for maintaining the $\alpha$-Sn phase and possibly for tuning strain.
  • Because $\alpha$-Sn is a topological Dirac semimetal in bulk, these room-temperature-stable nanocrystals could combine the reported gap with nontrivial surface or strain-induced electronic states in a THz-relevant energy window.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • The fixed 4.6 nm shell thickness used to convert measured nanoparticle diameters into $\alpha$-Sn core radii is borrowed from a different synthesis; cross-sectional electron microscopy of these exact samples would show whether the shell is actually constant across the three sizes, and that measurement decides whether the quantum-confinement curve is real or an artifact of the radii assignment.
  • If the gaps are genuine, the same samples should show a size-dependent absorption step and photoresponse around 15-35 THz in time-domain THz spectroscopy, which would independently confirm the Tauc-plot values.
  • The tensile-strain stabilization mechanism implies that deliberately thickening or thinning the oxide shell, or choosing anneal conditions that crystallize SnO2, could shift the gap even at fixed core size; this is a testable prediction the paper does not pursue.
  • Since the alpha-tin electronic structure is semimetallic and strain-sensitive, some of the observed gap opening could be strain- or topology-related rather than purely quantum confinement; polarization-resolved or magneto-optical far-infrared measurements could separate those contributions.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 5 minor

Summary. The paper reports a CMOS-compatible fabrication route for Sn nanoparticles on Si by PVD, baking to 400 °C, cooling to 200 °C, and microwave irradiation. GIXRD is used to identify a cubic α-Sn phase (a = 6.4892 Å) in the MW-treated samples, while XPS suggests a SnO2 shell. FTIR transmission spectra show a sigmoidal optical-density onset in the far-infrared for MW-treated samples, and Tauc-plot extrapolation yields direct bandgaps of 64, 79, and 137 meV for average nanoparticle diameters of 20, 17, and 14 nm. The authors interpret the size dependence as weak quantum confinement in the α-Sn cores and propose that shell-induced tensile stress stabilizes the α phase. The central claim is a size-tunable THz-range direct bandgap in α-Sn nanocrystals on Si.

Significance. If the claims are correct, this would be the first demonstration of size-controlled ultra-narrow direct bandgaps in α-Sn nanocrystals on a CMOS-compatible Si platform, with potential applications in THz photonics and integrated silicon photonics. The synthesis route is novel and the GIXRD evidence for α-Sn is a positive contribution. The paper also explicitly reports reusable quantities (effective masses from DFT, a dielectric constant, and measured gaps) that could be tested. However, the quantitative consistency of the quantum-confinement interpretation and the reliability of the Tauc-plot extraction are currently inadequate to support the size-tuning claim.

major comments (4)
  1. [Experimental Results and Discussion, QC equation (unnumbered) and Figure 5c] The quantum-confinement curve in Figure 5c cannot be consistent with the parameters stated in the text. Using m_e* = 0.04 m0, m_h* = 0.2 m0, ε = 14, and the written Brus-type equation gives confinement shifts of 1.88, 0.69, and 0.35 eV for R = 2.4, 3.9, and 5.4 nm, respectively, far above the reported gaps of 137, 79, and 64 meV. To force agreement, the bulk gap E_g,bulk would have to be −1.74, −0.61, and −0.29 eV for the three points; no single bulk gap can fit all three. The predicted change between the smallest and largest cores is about 1.5 eV, roughly twenty times the observed 73 meV. Thus the statement that the experimental data 'gather around the curve' is numerically unsupported. The authors should either report the exact parameter values used for the plotted curve or remove the curve and present the size dependence as purely empirical.
  2. [Experimental Results and Discussion, paragraph on shell thickness] The conversion of measured nanoparticle diameters to α-Sn core radii relies entirely on the assumption of a constant 4.6 nm SnO2 shell thickness adopted from ref [60], a study of differently synthesized Sn/SnOx core-shell particles. If the shell thickness varies with particle size in this microwave process, the core radii used in Figure 5c are incorrect and the apparent size dependence of the bandgap could collapse. No direct measurement of the shell thickness in the present samples (e.g., TEM, STEM-EDX, or XPS depth profiling) is provided, making this assumption load-bearing for the central size-tuning claim.
  3. [Experimental Results and Discussion, Tauc-plot method] The Tauc-plot bandgap extraction uses OD = −log10(I_sample/I_bare) without correcting for surface scattering, reflection losses, or the inhomogeneous nanoparticle layer. The linear fit range is described only as 'an appropriate range around the inflexion point,' with no stated energy window, number of points, or statistical residuals. Because the gap values are the central measured quantities, the robustness of the extrapolation should be documented quantitatively, for example by showing the fit-window dependence or by modeling a scattering background.
  4. [Experimental Results and Discussion, QC model applicability] The model is labeled 'weak confinement,' but with a_B* = 10.6 nm and core radii of 2.4–5.4 nm the system is in the strong-confinement regime (R < a_B*). Moreover, α-Sn is an inverted-band semimetal with no positive bulk gap, while the Brus-type equation presumes a parabolic direct-gap semiconductor with a well-defined positive E_g,bulk. The manuscript does not state the value of E_g,bulk used in Figure 5c, and the values required to match the data are negative and inconsistent (see first comment). The authors should justify the applicability of the effective-mass approximation to the inverted band and provide the actual E_g,bulk employed.
minor comments (5)
  1. [Methods, Sn Thin Film Deposition] There is a typo in 'a deposition rateo of 0.70 Å/s' (should be 'rate').
  2. [Abstract] The phrase 'in the range from 64 to 137 meV range' is redundant; the final 'range' should be removed.
  3. [References] Several references appear unrelated to the context in which they are cited (e.g., refs [5], [7], [9], [11], [12], [27], [31] concern tin oxides or other materials at points where the text discusses GeSn or α-Sn). The authors should re-check all citations.
  4. [Figure captions] The captions of Figures 4 and 5 do not define all symbols and curves; for instance, the dashed curve in Figure 5c is not identified in the caption, and the meaning of the shaded frequency window in panel (d) is not explained.
  5. [Structural analysis, GIXRD] The lattice parameter is given as 6.4892 Å without an uncertainty or comparison to the bulk α-Sn value; given the proposed strain-stabilization mechanism, a quantitative estimate of the strain (or a statement that the lattice parameter matches bulk within error) would strengthen the interpretation.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the bandgap values and particle sizes are independently measured, and the quantum-confinement curve is an interpretive comparison rather than a prediction forced by the data.

full rationale

The central quantitative claims are experimental: FTIR Tauc-plot extrapolation gives Eg = 64-137 meV, and SEM/AFM give NP diameters of 14, 17, and 20 nm. Neither quantity is defined in terms of the other. The quantum-confinement discussion uses externally stated or computed inputs (DFT effective masses, an assumed effective dielectric constant of 14, and a 4.6 nm shell thickness from ref. [60]) and compares the resulting Brus-type curve with the measured points. Even though the curve is not a clean first-principles prediction because Eg,bulk is not explicitly fixed and several parameters are chosen rather than measured, the measured bandgaps are not fed back into the model as fitting inputs, so the derivation does not reduce to its own output. The serious numerical inconsistency noted by the skeptic (the stated parameters predict shifts of 0.35-1.88 eV, not 64-137 meV, and no single Eg,bulk can fit all three points) is a correctness and parameterization problem, not a circularity. The self-citations [43,44] describe the synthesis route, but the alpha-Sn phase is supported here by independent GIXRD and XPS evidence, so no load-bearing claim rests solely on those citations. No circular step can be quoted with a specific equation or construction that makes a prediction equivalent to its input, so the appropriate finding is no significant circularity.

Assumptions & free parameters 4 free parameters · 5 assumptions · 0 invented entities

The central claims rest on several assumptions inherited from the literature or chosen for modeling convenience. Most load-bearing are the constant 4.6 nm shell thickness, the unstated bulk gap in the QC model, and the effective dielectric constant of 14. None are directly measured in this work.

free parameters (4)
  • Effective dielectric constant epsilon = 14
    Chosen as intermediate between alpha-Sn (24) and SnO2 shell; affects Bohr radius and Coulomb term in the QC model.
  • Bulk bandgap E_g,bulk of alpha-Sn = not reported
    Used in the quantum confinement expression but not stated in the text; if adjusted, it can shift the model curve onto the data.
  • SnO2 shell thickness = 4.6 nm
    Assumed constant for all NPs, taken from ref [60] on a different synthesis; converts measured NP diameters into core radii.
  • Tauc plot linear fit window = not specified
    The linear region 'around the inflexion point' is chosen per sample; without fixed criteria, the extracted gap depends on operator choice.
assumptions (5)
  • domain assumption The Brus/strong-confinement formula applies to alpha-Sn/SnO2 core-shell nanocrystals using bulk effective masses and a static dielectric constant
    The model in the text is used to relate E_g to core radius; but for R < a_B* (2.4-5.4 nm vs 10.6 nm), validity of the effective-mass approximation is questionable.
  • domain assumption Tauc relation (OD*hv)^2 proportional to (hv - E_g) holds, with optical density a proxy for absorption coefficient
    Assumes direct allowed transitions and neglects scattering/reflection differences between sample and bare substrate.
  • domain assumption The XPS Sn0 binding energy shift of ~0.2 eV indicates alpha-Sn rather than beta-Sn, even though prior work reports 0.3 eV
    The smaller shift is attributed to lower energy resolution; this is a weak identification.
  • standard math DFT band structure with HSE functional gives reliable effective masses for the quantum confinement model
    DFT is a standard tool, but HSE gap errors can affect masses.
  • ad hoc to paper Stabilization of alpha-Sn is caused by tensile stress from the SnO2 shell volume contraction
    Proposed mechanism based on XPS/GIXRD; no direct strain measurement is provided.

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Cite this review

Pith. "Pith review of Tuning Ultra-Narrow Direct Bandgap in alpha-Sn Nanocrystals: A CMOS-Compatible Approach for THz Applications." pith.science (2026). https://pith.science/paper/6ESK3YT3

@misc{pith2026250521440,
  author       = {Pith},
  title        = {Pith review of: Tuning Ultra-Narrow Direct Bandgap in alpha-Sn Nanocrystals: A CMOS-Compatible Approach for THz Applications},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/6ESK3YT3}},
  note         = {Machine review of arXiv:2505.21440}
}
read the original abstract

alpha-Sn has recently been attracting significant interest due to its unique electronic properties. However, this allotrope of Sn is stable only below 13 {\deg}C and alternative options to the conventional stabilization by epitaxial growth on InSb are still a challenge. In this work, nanoparticles with inner alpha-Sn nanocrystals were synthesized on a Silicon substrate via a CMOS-compatible process through microwave irradiation. The nanoparticle morphology was characterized by Scanning Electron Microscopy and Atomic Force Microscopy, demonstrating the ability to control the nanoparticle size by a dewetting process combined with a coalescence process induced by the microwaves. Grazing Incidence X-Ray Diffraction analyses confirmed the stabilization of the alpha-Sn phase within a SnO2 shell, while X-Ray Photoemission Spectroscopy measurements revealed the presence of a bandgap. Infrared transmission spectroscopy combined with a Tauc-plot extrapolation led to an estimate of the gap in the range from 64 to 137 meV range. Furthermore, the possibility to tune the bandgap by controlling the nanoparticle size, possibly leveraging weak quantum confinement effects, was demonstrated, unveiling the potential of alpha-Sn nanoparticles on Si for the development of CMOS-compatible THz devices.

Figures

Figures reproduced from arXiv: 2505.21440 by the authors.

Figure 3
Figure 3. (a) GIXRD images of the Si(100) substrate and the Sn5_MW sample. (b) Magnified views around the 220 Bragg peak of Si(100), showing resolution-limited peaks associated with highly crystalline cubic α-Sn grains. (c) Background-subtracted GIXRD profiles integrated along the 𝑞𝑧 direction, highlighting reflections corresponding to the peaks marked by arrows in the magnified section (b). The ℎ𝑘𝑙 indices, along with their … view at source ↗

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Works this paper leans on

72 extracted references · 72 canonical work pages

  1. [60]

    M., Philippe, A

    Heggen, M., Medina, J. M., Philippe, A. M., and Barborini, E. Experimental insights on the stability of core–shell structure in single Sn/SnOx spherical nanoparticles during room temperature oxidation. Appl. Surf. Sci., 2025, 684, 161984

    work page 2025

  2. [1]

    Doherty, J., Biswas, S., O’Regan, C., Biswas, S., & Holmes, J. D. Progress on germanium−tin nanoscale alloys. Chem. Mater., 2020, 32(11), 4383–4408

    work page 2020

  3. [2]

    S., & Maldonado, S

    Barth, S., Seifner, M. S., & Maldonado, S. Metastable group IV allotropes and solid solutions: nanoparticles and nanowires. Chem. Mater., 2020, 32(7), 2703–2741

    work page 2020

  4. [3]

    A., Marzban, B., Witzens, J., Du, W., Yu, S.-Q., Chelnokov, A., Buca, D., & Nam, D

    Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C. A., Marzban, B., Witzens, J., Du, W., Yu, S.-Q., Chelnokov, A., Buca, D., & Nam, D. Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. Appl. Phys. Lett., 2021, 118(11), 110502

    work page 2021

  5. [4]

    He, G., and Atwater, H. A. Interband transitions in SnₓGe₁₋x alloys. Phys. Rev. Lett., 1997, 79(10), 1937–1940

    work page 1997

  6. [5]

    Tailoring the Properties of SnO₂ Nanostructures by Doping with Transition Metal Ions

    Gupta, S., Rajasekaran, A., Bhattacharya, S., and Ghosh, A. Tailoring the Properties of SnO₂ Nanostructures by Doping with Transition Metal Ions. Nano Lett., 2013, 13(8), 3783–3790 [6] S. Biswas et al. Nat. Commun. 2016, 7, 11405

    work page 2013

  7. [7]

    Morphology-Controlled Synthesis of High- Performance Bismuth Oxide Nanostructures

    Yang, Q., Zhang, Z., Du, L., and Li, X. Morphology-Controlled Synthesis of High- Performance Bismuth Oxide Nanostructures. Chem. Mater., 2019, 31(6), 2248–2252 [8] E. Azrak et al. J. Phys. Chem. C 2020, 124, 1220-1226

    work page 2019

  8. [9]

    Recent progress in the growth of two- dimensional materials and their applications

    Gong, R., Zhang, Z., Chen, Y., and Wang, X. Recent progress in the growth of two- dimensional materials and their applications. Phys. Status Solidi RRL, 2021, 2100554 26

    work page 2021

Show all 72 references
  1. [10]

    C., Manca, M., Liu, L., and Liu, Y

    Barbieri, R. C., Manca, M., Liu, L., and Liu, Y. Tuning the Electronic Properties of Tin Oxide Nanoparticles: Effects of Particle Size and Functionalization. Chem. Mater., 2021, 33(18), 6897–6908

    2021

  2. [11]

    Fabrication and Characterization of High- Performance Copper Nanowires for Flexible Electronics

    Biswas, S., Kumar, S., Singh, N., and Sharma, R. Fabrication and Characterization of High- Performance Copper Nanowires for Flexible Electronics. ACS Appl. Nano Mater., 2021, 4(2), 1048–1056

    2021

  3. [12]

    A., Yang, L., Li, Y., and Zhang, X

    Newton, K. A., Yang, L., Li, Y., and Zhang, X. Structural and Optical Properties of Lead- Free Perovskite Nanomaterials. J. Phys. Chem. C, 2021, 125(12), 6401–6417 [13] M. S. Seifner et al. ACS Nano 2019, 13, 8047-8054

    2021

  4. [14]

    Infrared Detectors and Their Applications in Optoelectronics

    Rogalski, A. Infrared Detectors and Their Applications in Optoelectronics. Opto-Electron. Rev., 2013, 21(4), 406–426

    2013

  5. [15]

    C., and Niyato, D

    Zhang, L., Liang, Y. C., and Niyato, D. 6G Visions: Mobile ultra-broadband, super internet- of-things, and artificial intelligence. China Commun., 2019, 16(8), 1–14

    2019

  6. [16]

    Design and Optimization of a Low- Latency High-Throughput Communication System

    Ottaviani, C., Ferrero, M., Bassi, S., and D’Oro, S. Design and Optimization of a Low- Latency High-Throughput Communication System. IEEE J. Sel. Areas Commun., 2020, 38(3), 483–495

    2020

  7. [17]

    Widicus Weaver, S. L. Interstellar Chemistry: From Molecules to Stars. Annu. Rev. Astron. Astrophys., 2019, 57, 79–112

    2019

  8. [18]

    R., and MacNair, J

    Jayaraman, A., Lippincott, E. R., and MacNair, J. R. Elastic and Thermodynamic Properties of Magnesium Oxide. Phys. Rev., 1963, 130(2), 540–547 27

    1963

  9. [19]

    The phenomenon of tin pest: A review

    Cornelius, B., Treivish, S., Rosenthal, Y., and Pecht, M. The phenomenon of tin pest: A review. Microelectronics Reliability, 2017, 79, 175–192

    2017

  10. [20]

    First-Principles Study of the Structural Phase Transition in Sn

    Na, S., and Park, C. First-Principles Study of the Structural Phase Transition in Sn. Journal of the Korean Physical Society, 2010, 56(1), 494–497

    2010

  11. [21]

    W., and Tufte, O

    Ewald, A. W., and Tufte, O. N. Gray Tin Single Crystals. Journal of Applied Physics, 1958, 29(7), 1007–1009

    1958

  12. [22]

    Band Structure of Gray Tin

    Groves, S., and Paul, W. Band Structure of Gray Tin. Phys. Rev. Lett., 1963, 11(5), 194–196

    1963

  13. [23]

    A., and Kebn, R

    Busch, G. A., and Kebn, R. Semiconducting Properties of Gray Tin. Solid State Physics, 1960, 11, 1–40

    1960

  14. [24]

    Optical Constants of Crystalline and Amorphous Semiconductors-Numerical Data and Graphical Information

    Adachi, S. Optical Constants of Crystalline and Amorphous Semiconductors-Numerical Data and Graphical Information. Kluwer Academic Publishers, Norwell, 1999, p. 49

    1999

  15. [25]

    Excitonic effects in the optical absorption of gapless semiconductor α-tin near the direct bandgap

    Zollner S. Excitonic effects in the optical absorption of gapless semiconductor α-tin near the direct bandgap. J. Vac. Sci. Technol. B, 2024, 42, 022203

    2024

  16. [26]

    A., Zamarripa, C

    Carrasco, R. A., Zamarripa, C. M., Zollner, S., Menéndez, J., Chastang, S. A., Duan, J., Grzybowski, G. J., Claflin, B. B., and Kiefer, A. M. The direct bandgap of gray α-tin investigated by infrared ellipsometry. Appl. Phys. Lett., 2018, 113(23), 232104

    2018

  17. [27]

    Observation of the Topological Insulator Surface State in Bi₂Se₃ Thin Films

    Barfuss, A., Sato, T., Saitoh, Y., and Matsuura, K. Observation of the Topological Insulator Surface State in Bi₂Se₃ Thin Films. Phys. Rev. Lett., 2013, 111, 157205

    2013

  18. [28]

    Tensile strained gray tin: Dirac semimetal for observing negative magnetoresistance with Shubnikov-de Haas oscillations

    Huang, H., and Liu, F. Tensile strained gray tin: Dirac semimetal for observing negative magnetoresistance with Shubnikov-de Haas oscillations. Phys. Rev. B, 2017, 95(20), 201101 28

    2017

  19. [29]

    Polaczyński, J., Krizman, G., Kazakov, A., Turowski, B., Bermejo Ortiz, J., Rudniewski, R., Wojciechowski, T., Dłużewski, P., Aleszkiewicz, M., de Vaulchier, W., Guldner, Y., Wojtowicz, T., and Volobuev, V. V. 3D topological semimetal phases of strained α-Sn on insulating subs...

    2024

  20. [30]

    N., Dempsey, C

    Engel, A. N., Dempsey, C. P., Inbar, H. S., Dong, J. T., Nishihaya, S., Chang, Y., Fedorov, A. V., Hashimoto, M., Lu, D., and Palmstrøm, C. J. Growth and characterization of α-Sn thin films on In- and Sb-rich reconstructions of InSb(001). Phys. Rev. Materials, 2024, 8(4), 044202

    2024

  21. [31]

    D., Tran, T

    Anh, L. D., Tran, T. T., Nguyen, V. P., and Do, T. M. High-Performance Tin Oxide Nanostructures for Gas Sensing Applications. Adv. Mater., 2021, 33, 2104645

    2021

  22. [32]

    T., Ju, Z., McMinn, A

    Basnet, R., Upreti, D., McCarthy, T. T., Ju, Z., McMinn, A. M., Sharma, M. M., Zhang, Y., and Hu, J. Magneto-transport study on Sn-rich Sn₁₋ₓGeₓ thin films enabled by CdTe buffer layer. J. Vac. Sci. Technol. B, 2024, 42(4), 042210

    2024

  23. [33]

    M., Palmstrøm, C

    Chen, A.-H., Dempsey, C., Pendharkar, M., Sharma, A., Zhang, B., Tan, S., Bellon, L., Frolov, S. M., Palmstrøm, C. J., and Bellet-Amalric, E. Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates. Nanotechnolog...

    2023

  24. [34]

    C., Gardener, J

    Liu, S., Covian, A. C., Gardener, J. A., Akey, A., Levin, B. D. A., Wang, X., and Liu, J. Growth of α-Sn on silicon by a reversed β-Sn to α-Sn phase transformation for quantum material integration. Commun. Mater., 2022, 3, 17

    2022

  25. [35]

    A., Akey, A., Gao, X., Wang, X., and Liu, J

    Liu, S., Li, S., Gardener, J. A., Akey, A., Gao, X., Wang, X., and Liu, J. Phase-Pure α-Sn Quantum Material on Si Seeded by a 2 nm-Thick Ge Layer. Small Methods, 2024, e2400550 29

    2024

  26. [36]

    K., Srivastava, P., Nawaz, A., Singh, V., Koch, B., Krishnamurthy, S., Kumar, M., and Gupta, R

    Sabbarwal, S., Majumdar, S., Verma, V. K., Srivastava, P., Nawaz, A., Singh, V., Koch, B., Krishnamurthy, S., Kumar, M., and Gupta, R. Room-Temperature-Stabilized Alpha Tin Nanocrystals for In Vivo Toxicology Evaluation and Photothermal Therapy Corroborated by FFT Modeling. AC...

    2025

  27. [37]

    Size-dependent stability of ultra-small α-/β- phase tin nanocrystals synthesized by microplasma

    Ul Haq, A., Askari, S., McLister, A., Rawlinson, S., Davis, J., Chakrabarti, S., Svrcek, V., Maguire, P., Papakonstantinou, P., and Mariotti, D. Size-dependent stability of ultra-small α-/β- phase tin nanocrystals synthesized by microplasma. Nat. Commun., 2019, 10, 817

    2019

  28. [38]

    V., Rogach, A

    Talapin, D. V., Rogach, A. L., Kornowski, A., Haase, M., and Weller, H. Highly Luminescent Monodisperse CdSe and CdSe/ZnS Nanocrystals Synthesized in a Hexadecylamine–Trioctylphosphine Oxide–Trioctylphosphine Mixture. Nano Lett., 2001, 1, 207–211

    2001

  29. [39]

    Garvie, R. C. The Occurrence of Metastable Tetragonal Zirconia as a Crystallite Size Effect. J. Phys. Chem., 1965, 69, 1238–1243

    1965

  30. [40]

    Stabilizing cubic γ-Ga₂O₃:Cr³⁺ spinel nanocrystals by size confinement into mesoporous silica nanoreactor channels

    Crozzolin, M., Belloni, C., Xu, J., Nakanishi, T., Ueda, J., Tanabe, S., Dallo, F., Balliana, E., Saorin, A., Rizzolio, F., Cristofori, D., Riello, P., Benedetti, A., and Back, M. Stabilizing cubic γ-Ga₂O₃:Cr³⁺ spinel nanocrystals by size confinement into mesoporous silica nan...

    2024

  31. [41]

    R., Chattopadhyay, S., and Multani, M

    Ayyub, P., Palkar, V. R., Chattopadhyay, S., and Multani, M. Effect of crystal size reduction on lattice symmetry and cooperative properties. Phys. Rev. B: Condens. Matter Mater. Phys., 1995, 51, 6135–6138 [42] J. Phys. Chem. C 2014, 118, 30238−30243 30

    1995

  32. [43]

    Assembly for the Deposition of Silicon Nanostructures

    Palma, F. Assembly for the Deposition of Silicon Nanostructures. U.S. Patent 11,718,909 B2, August 18, 2023

    2023

  33. [44]

    Microwave driven synthesis of narrow bandgap alpha-tin nanoparticles on silicon

    Mazzetta, I., Viti, L., Rigoni, F., Quaranta, S., Gasparotto, A., Barucca, G., Palma, F., Riello, P., Cattaruzza, E., Asgari, M., Vitiello, M., Irrera, F. Microwave driven synthesis of narrow bandgap alpha-tin nanoparticles on silicon. Mater. Des., 2022, 217, 110632

    2022

  34. [45]

    Sieradzki, K., Bailey, K., and Alford, T. L. Agglomeration and percolation conductivity. Appl. Phys. Lett., 2001, 79, 3401–3403

    2001

  35. [46]

    J., & Lee, J.-J

    Kwon, S.-H., Han, D.-H., Choe, H. J., & Lee, J.-J. (2011). Synthesis of copper nanoparticles by solid-state plasma-induced dewetting. Nanotechnology, 22, 245608

    2011

  36. [47]

    M., Butz, B., & Spiecker, E

    Niekiel, F., Schweizer, P., Kraschewski, S. M., Butz, B., & Spiecker, E. (2015). The process of solid-state dewetting of Au thin films studied by in situ scanning transmission electron microscopy. Acta Materialia, 90, 118–132

    2015

  37. [48]

    Bischof, J., Scherer, D., Herminghaus, S., & Leiderer, P. (1996). Dewetting Modes of Thin Metallic Films: Nucleation of Holes and Spinodal Dewetting. Phys. Rev. Lett., 77, 1536–1539

    1996

  38. [49]

    H., Rümmeli, M

    Warner, J. H., Rümmeli, M. H., Bachmatiuk, A., & Büchner, B. (2011). Atomic resolution imaging and topography of boron nitride sheets produced by chemical exfoliation. ACS Nano, 5, 470–476

    2011

  39. [50]

    Microwave chemistry, recent advancements, and eco-friendly microwave-assisted synthesis of nanoarchitectures and their applications: a review

    Kumar, A., Kuang, Y., Liang, Z., Sun, X. Microwave chemistry, recent advancements, and eco-friendly microwave-assisted synthesis of nanoarchitectures and their applications: a review. Mater. Today Nano, 2020, 11, 100076 31

    2020

  40. [51]

    & Werzer, O

    Schrode, B., Pachmajer, S., Dohr, M., Röthel, C., Domke, J., Fritz, T., ... & Werzer, O. GIDVis: a comprehensive software tool for geometry-independent grazing-incidence X-ray diffraction data analysis and pole-figure calculations. J. Appl. Crystallogr., 2019, 52(3), 683–689

    2019

  41. [52]

    M., Philippe, A

    Medina, J. M., Philippe, A. M., Guillot, J., Vergne, C., Fleming, Y., & Barborini, E. Intermediate tin oxide in stable core-shell structures by room temperature oxidation of cluster- assembled nanostructured Sn films. Appl. Surf. Sci., 2024, 658, 159846

    2024

  42. [53]

    A synchrotron radiation photoemission study of the oxidation of tin

    De Padova, P., Fanfoni, M., Larciprete, R., Mangiantini, M., Priori, S., & Perfetti, P. A synchrotron radiation photoemission study of the oxidation of tin. Surf. Sci., 1994, 313(3), 379– 391

    1994

  43. [55]

    Thermodynamic modeling of oxidation of tin nanoparticles

    Leitner, J., and Sedmidubský, D. Thermodynamic modeling of oxidation of tin nanoparticles. J. Phase Equilibria Diffus., 2019, 40, 10–20

    2019

  44. [56]

    S., Huh, M

    Kim, J. S., Huh, M. Y., and Ahn, J. P. Effect of particle size on the oxidation behavior of nanophase tin synthesized by inert gas condensation. Solid State Phenom., 2007, 119, 9–12

    2007

  45. [57]

    An HAXPES study of Sn, SnS, SnO, and SnO2

    Fondell, M., Gorgoi, M., Boman, M., and Lindblad, A. An HAXPES study of Sn, SnS, SnO, and SnO2. J. Electron Spectrosc. Relat. Phenom., 2014, 195, 195–199

    2014

  46. [58]

    D., and Kobayashi, M

    Inagaki, K., Ishihara, K., Hotta, T., Seki, Y., Takeda, T., Ishida, T., Ootsuki, D., Kawasaki, I., Fujimori, S., Tanaka, M., Anh, L. D., and Kobayashi, M. Allotropic transition of Dirac 32 semimetal α-Sn to superconductor β-Sn induced by focused-ion-beam irradiation. Appl. Phy...

    2024

  47. [59]

    Controlled SnO2 crystallinity effectively dominating sodium storage performance

    Fan, L., Li, X., Yan, B., Feng, J., Xiong, D., Li, D., Gu, L., Wen, Y., Lawes, S., and Sun, X. Controlled SnO2 crystallinity effectively dominating sodium storage performance. Adv. Energy Mater., 2016, 6(10), 1502057

    2016

  48. [61]

    Experimental investigation of the oxidation of tin nanoparticles

    Song, P., and Wen, D. Experimental investigation of the oxidation of tin nanoparticles. J. Phys. Chem. C, 2009, 113(31), 13470–13476

    2009

  49. [62]

    A., Abdel-Latief, A

    Gaber, A., Abdel-Rahim, M. A., Abdel-Latief, A. Y., and Abdel-Salam, M. N. Influence of calcination temperature on the structure and porosity of nanocrystalline SnO₂ synthesized by a conventional precipitation method. Int. J. Electrochem. Sci., 2014, 9, 81–95

    2014

  50. [63]

    Facile synthesis of SnO₂ shell followed by microwave treatment for high environmental stability of Ag nanoparticles

    Baranowska-Korczyc, A., Mackiewicz, E., Ranoszek-Soliwoda, K., Grobelny, J., and Celichowski, G. Facile synthesis of SnO₂ shell followed by microwave treatment for high environmental stability of Ag nanoparticles. RSC Adv., 2020, 10(63), 38424–38436 [64] M. F. Fhyn et al. Phys...

    1999

  51. [65]

    P., and Kasemo, B

    Zhdanov, V. P., and Kasemo, B. On the feasibility of strain-induced formation of hollows during hydriding or oxidation of metal nanoparticles. Nano Lett., 2009, 9, 2172–2176 [66] Appl. Surface Sci. 541, 148508 (2021) 33

    2021

  52. [67]

    G., Schedin, F., and Segal, D

    Ingham, B., Huthwelker, T., Pettifor, D. G., Schedin, F., and Segal, D. Synchrotron x-ray diffraction measurements of strain in metallic nanoparticles with oxide shells. J. Phys. D Appl. Phys., 2010, 43, 075301

    2010

  53. [68]

    M., Chtaïb, M., Henrard, L., Lambin, P., Darville, J., and Gilles, J

    Themlin, J. M., Chtaïb, M., Henrard, L., Lambin, P., Darville, J., and Gilles, J. M. Characterization of tin oxides by x-ray-photoemission spectroscopy. Phys. Rev. B, 1992, 46(4), 2460

    1992

  54. [69]

    Z., Chan, Y

    Xu, C. Z., Chan, Y. H., Chen, Y., Chen, P., Wang, X., Dejoie, C., Wong, M. H., Hlevyack, J. A., Ryu, H., Kee, H. Y., Tamura, N., Chou, M. Y., Hussain, Z., Mo, S. K., and Chiang, T. C. Elemental topological Dirac semimetal: α-Sn on InSb (111). Phys. Rev. Lett., 2017, 118(14), 146402

    2017

  55. [70]

    D., Takase, K., Chiba, T., Kota, Y., Takiguchi, K., and Tanaka, M

    Anh, L. D., Takase, K., Chiba, T., Kota, Y., Takiguchi, K., and Tanaka, M. Elemental Topological Dirac Semimetal α‐Sn with High Quantum Mobility. Adv. Mater., 2021, 33(51), 2104645

    2021

  56. [71]

    Optical properties and electronic structure of amorphous germanium

    Tauc, J., Grigorovici, R., and Vancu, A. Optical properties and electronic structure of amorphous germanium. Phys. Stat. Sol., 1966, 15, 627–637

    1966

  57. [72]

    Zinc oxide films prepared by sol-gel spin-coating

    Natsume, Y., and Sakata, H. Zinc oxide films prepared by sol-gel spin-coating. Thin Solid Films, 2000, 372, 30–36

    2000

  58. [73]

    H., Volkringer, C., Loiseau, T., Tejeda, A., Hureau, M., and Moissette, A

    Andrade, P. H., Volkringer, C., Loiseau, T., Tejeda, A., Hureau, M., and Moissette, A. Band gap analysis in MOF materials: Distinguishing direct and indirect transitions using UV-vis spectroscopy. Appl. Mater. Today, 2024, 37, 102094 34

    2024

  59. [74]

    Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H- MoTe₂

    Stellino, E., Capitani, F., Ripanti, F., Verseils, M., Petrillo, C., Dore, P., and Postorino, P. Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H- MoTe₂. Sci. Rep., 2022, 12, 17333

    2022

  60. [75]

    Effects of dielectric confinement and electron-hole exchange interaction on excitonic states in semiconductor quantum dots

    Takagahara, T. Effects of dielectric confinement and electron-hole exchange interaction on excitonic states in semiconductor quantum dots. Phys. Rev. B, 1993, 47, 4569

    1993

  61. [76]

    Role of semicore d electrons in quasiparticle band-structure calculations

    Rohlfing, M., Krüger, P., and Pollmann, J. Role of semicore d electrons in quasiparticle band-structure calculations. Phys. Rev. B, 1998, 57, 6485

    1998

  62. [77]

    Giannozzi, P., Andreussi, O., Brumme, T., Bunau, O., Buongiorno Nardelli, M., Calandra, M., Car, R., Cavazzoni, C., Ceresoli, D., Cococcioni, M., Colonna, N., Carnimeo, I., Dal Corso, A., de Gironcoli, S., Delugas, P., DiStasio, R. A. Jr., Ferretti, A., Floris, A., Fratesi, G....

    2017

  63. [78]

    E., and Ernzerhof, M

    Heyd, J., Scuseria, G. E., and Ernzerhof, M. Hybrid functionals based on a screened Coulomb potential. J. Chem. Phys., 2003, 118, 8207

    2003

  64. [79]

    A., Yates, J

    Mostofi, A. A., Yates, J. R., Pizzi, G., Lee, Y. S., Souza, I., Vanderbilt, D., and Marzari, N. An updated version of Wannier90: A tool for obtaining maximally-localised Wannier functions. Comput. Phys. Commun., 2014, 185, 2309

    2014

Pith tools

Reviewed August 7, 2026 · model on record in the stance chip above.