arxiv: 1410.6019 · v2 · pith:6QYY6ZYJnew · submitted 2014-10-22 · ❄️ cond-mat.mes-hall · cond-mat.str-el

Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

M.Yu. Melnikov , A.A. Shashkin , V.T. Dolgopolov , S.-H. Huang , C.W. Liu , S.V. Kravchenko This is my paper

classification ❄️ cond-mat.mes-hall cond-mat.str-el

keywords sigewellelectronmobilityquantumadditioncloseconductivity

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We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.

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Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

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