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(La1-xBax)(Zn1-xMnx)AsO: A Two Dimensional "1111" Diluted Magnetic Semiconductor in Bulk Form

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arxiv 1306.4444 v1 pith:7574BNRJ submitted 2013-06-19 cond-mat.str-el cond-mat.mtrl-sci

Cui Ding , Huiyuan Man , Chuan Qin , Jicai Lu , Yunlei Sun , Quan Wang , Biqiong Yu , Chunmu Feng
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T. Goko C.J. Arguello L. Liu B.J. Frandsen Y.J. Uemura Hangdong Wang H. Luetkens E. Morenzoni W. Han C. Q. Jin T. Munsie T.J. Williams R.M. D'Ortenzio T. Medina G.M. Luke T. Imai F.L. Ning
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classification cond-mat.str-elcond-mat.mtrl-sci
keywords ferromagneticorderbulkdiluteddopingla1-xbaxmagneticsemiconductor
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We report the synthesis and characterization of a bulk diluted magnetic semiconductor (La1-xBax)(Zn1-xMnx)AsO (0 <= x <= 0.2) with a layered crystal structure identical to that of the "1111" FeAs superconductors. No ferromagnetic order occurs for (Zn,Mn) substitution in the parent compound LaZnAsO without charge doping. Together with carrier doping via (La,Ba) sub- stitution, a small amount of Mn substituting for Zn results in ferromagnetic order with TC up to ~40 K, although the system remains semiconducting. Muon spin relaxation measurements confirm the development of ferromagnetic order in the entire volume, with the relationship between the internal field and TC consistent with the trend found in (Ga,Mn)As, the "111" Li(Zn,Mn)As, and the "122" (Ba,K)(Zn,Mn)2As2 systems.

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