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Oscillating magnetoresistance in graphene p-n junctions at intermediate magnetic fields

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arxiv 1612.07624 v2 pith:7KWJIDRS submitted 2016-12-22 cond-mat.mes-hall

Hiske Overweg , Hannah Eggimann , Ming-Hao Liu , Anastasia Varlet , Marius Eich , Pauline Simonet , Yongjin Lee , Kenji Watanabe
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Takashi Taniguchi Klaus Richter Vladimir I. Fal'ko Klaus Ensslin Thomas Ihn
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keywords graphenemagnetoresistanceoscillationsjunctionsattributebeenbilayerconsisting
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We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p- regions.

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