Charge Offset Stability in Si Single Electron Devices with Al Gates

Andrew S. Dzurak; Chih-Hwan Yang; Nai Shyan Lai; Neil M. Zimmerman; Wee Han Lim

arxiv: 1406.7475 · v1 · pith:7LJY654Knew · submitted 2014-06-29 · ❄️ cond-mat.mes-hall

Charge Offset Stability in Si Single Electron Devices with Al Gates

Neil M. Zimmerman , Chih-Hwan Yang , Nai Shyan Lai , Wee Han Lim , Andrew S. Dzurak This is my paper

classification ❄️ cond-mat.mes-hall

keywords chargeoffsetdriftgatesdefineddeviceselectronseds

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We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability.

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Charge Offset Stability in Si Single Electron Devices with Al Gates

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