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Si CMOS Platform for Quantum Information Processing

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arxiv 1912.09805 v1 pith:A3LLZ23Q submitted 2019-12-20 cond-mat.mes-hall

L. Hutin , R. Maurand , D. Kotekar-Patil , A. Corna , H. Bohuslavskyi , X. Jehl , S. Barraud , S. De Franceschi
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M. Sanquer M. Vinet
This is my paper
classification cond-mat.mes-hall
keywords quantumcmosdeviceplatformspinappliedcoherentcompact
verification ladder T0 review T1 audit T2 compute T3 formal
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We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself.

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