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Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides

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arxiv 2106.15090 v2 pith:A3VS75FX submitted 2021-06-29 cond-mat.mes-hall

classification cond-mat.mes-hall
keywords statesvalleygatedquantumqubitqubitssinglespin-valley
verification ladder T0 review T1 audit T2 compute T3 formal

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abstract

We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated quantum dot. The two-qubit states are accurately described using a multi-million atom tight-binding model solved in wavevector space. The spin-valley locking and strong spin-orbit coupling result in two degenerate states, one of the qubit states being spin-down located at the $+K$ valley of the Brillouin zone, and the other state located at the $-K$ valley with spin up. We describe the qubit operations necessary to rotate the spin-valley qubit as a combination of the applied vertical electric field, enabling spin-orbit coupling in a single valley, with a lateral strongly localized valley-mixing gate.

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