arxiv: 1608.07894 · v1 · pith:A72HUGBZnew · submitted 2016-08-29 · ❄️ cond-mat.mes-hall

Surface-gate-defined single-electron-transistor in a MoS₂ bilayer

M. Javaid , Daniel W. Drumm , Salvy P. Russo , Andrew D. Greentree This is my paper

classification ❄️ cond-mat.mes-hall

keywords bilayerdesignquantumanalysisapproachassociatedbarrierscombining

0 comments p. Extension

Add this Pith Number to your LaTeX paper

\usepackage{pith}
\pithnumber{A72HUGBZ}

Prints a linked pith:A72HUGBZ badge after your title and writes the identifier into PDF metadata. Compiles on arXiv with no extra files. Learn more

read the original abstract

We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS$_{2}$ bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.

This paper has not been read by Pith yet.

Surface-gate-defined single-electron-transistor in a MoS₂ bilayer

discussion (0)