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Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions

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arxiv cond-mat/0308385 v1 pith:AUUSVFXT submitted 2003-08-19 cond-mat.mes-hall

C. Ruester , T. Borzenko , C. Gould , G. Schmidt , L.W. Molenkamp , X. Liu , T.J. Wojtowicz , J.K. Furdyna
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Z.G. Yu M.E. Flatte
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classification cond-mat.mes-hall
keywords magnetoresistancesamplesconstrictioneitheraccumulationanisotropyantiparallelbarrier
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We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000 %.

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