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Paper Citation Record · LEDGER

Revised theoretical limit of subthreshold swing in field-effect transistors

As of 16 August 2026, this Paper Citation Record lists 0 of 0 outbound references and 2 inbound Pith citation observations for arXiv:1811.09146.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
1811.09146 v3

Coverage vector

measured 0 of 0 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links

measured 2 of 2 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-16T06:30:59.297886+00:00

measured 2 of 2 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links, observed 2026-08-16T04:34:08.271975Z

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: pith, observed 2026-08-14T14:43:11.686322Z

Reference resolution

0 of 0 outbound references displayed

  • verified exact0
  • verified fuzzy0
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  • malformed identifier0
  • metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

No outbound reference observations are available for this paper version.

Pith citing papers

Observation f989175e-a92c-41a7-a8a9-6fc2b7a55150 · inbound

A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics cites this paper.

A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics Revised theoretical limit of subthreshold swing in field-effect transistors

Reference 81

Resolution
verified exact
local_arxiv, observed 2026-08-14T14:43:11.694769Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T14:43:11.206317Z digest=sha256:0dd68a84c99e17b839e995c19e19527a5e5d389375f5b9e036a9976ded45d257

Observation e3565afb-b308-4fff-8f47-4a8bbaa9a1c0 · inbound

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data cites this paper.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Revised theoretical limit of subthreshold swing in field-effect transistors

Reference 14

Resolution
unresolved
no resolver link, observed 2026-08-16T04:34:08.271975Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-08-16T04:34:08.271975Z digest=sha256:6bb46112c8812ccd1871142f4e7fd83a99de6d0b47ab04fe1d22e0d0d49a14ae