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An accurate and robust level-set formulation for multiple junction kinetics

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arxiv 2503.02061 v1 pith:B4UGC4HQ submitted 2025-03-03 cs.CE cond-mat.mtrl-sci

classification cs.CEcond-mat.mtrl-sci
keywords duringformulationgrainjunctionkineticslevel-setmethodmigration
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abstract

The front-capturing Level-Set (LS) method is widely employed in academia and industry to model grain boundary (GB) migration during the microstructure evolution of polycrystalline materials under thermo-mechanical treatments. During capillarity-driven grain growth, the conventional mean curvature flow equation, $\vec{v} = - \mu \gamma \kappa \vec{n}$, is used to compute the GB normal migration velocity. Over recent decades, extensive efforts have been made to incorporate polycrystalline heterogeneity into this framework. However, despite increased complexity and computational costs, these approaches have yet to achieve fully satisfactory performance. This paper introduces a simple yet robust LS formulation that accurately captures multiple junction kinetics, even with extreme GB energy ratios. Validation against existing analytical solutions highlights the method's accuracy and efficiency. This novel approach offers significant potential for advancing the study of highly heterogeneous interface systems.

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  1. High-fidelity modeling of interface crossing in the diffusion welding process at the polycrystalline scale

    cond-mat.mtrl-sci 2025-07 conditional novelty 6.0 of 10

    Level-set grain-growth simulations of diffusion-welded interfaces introduce two normalized crossing criteria and quantify how grain size and second-phase particle density, shape, and evolution control interface crossing.

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