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REVIEW 2 major objections 4 minor 263 references

Recent progress on electron- and magnon-mediated torques

T0 review · 2 major / 4 minor · reviewed 2026-08-15 · deepseek-v4-flash

Pith's one-line read A review maps the three torque mechanisms—spin-orbit, orbital, and magnon—to the materials that enable them, and flags which reported efficiencies remain contested.

desk verdict Useful, current review of electron- and magnon-mediated torques, but the orbital-torque section presents as established the very results the authors later flag as disputed. read the letter →

arxiv 2505.09257 v1 pith:BOLFTYST submitted 2025-05-14 cond-mat.mtrl-sci

classification cond-mat.mtrl-sci PACS 75.70.Tj75.60.Jk75.76.+j72.25.-b
keywords spin-orbittorqueorbitalmagnonaltermagnetfield-freeswitchingspinHalleffectmagneticrandom-accessmemory
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This review sets out to organize current-induced magnetization switching into three routes distinguished by the carrier of angular momentum: electron spins (conventional spin-orbit torque), electron orbital motion (orbital torque), and magnons in insulating magnets (magnon torque). For each route it ties the generation mechanism—spin Hall and Rashba-Edelstein effects for spins, orbital Hall and orbital Rashba-Edelstein effects for orbitals, interfacial spin-to-magnon conversion for magnons—to the material families that have demonstrated switching. The practical stake is SOT-MRAM as a high-speed, low-power memory technology, where the key bottleneck is field-free switching of perpendicular magnetization. The review's own conclusion, however, is that the field is not settled: it lists contested claims, notably some positive orbital-torque efficiencies and the altermagnetic ground state of RuO2, as open problems rather than solved ones.

What carries the argument

The organizing quantity is the torque efficiency ξ, defined separately for each mechanism: for conventional SOT the spin Hall angle θ_SH and spin Hall conductivity σ_SH; for orbital torque the effective orbital Hall angle θ_OH^eff = θ_OH · η_L-S, where θ_OH is the orbital Hall angle of the source metal and η_L-S the orbital-to-spin conversion coefficient of the ferromagnet or an inserted conversion layer; and for magnon torque the spin torque ratio θ_i = J_i / J_c transmitted through the antiferromagnetic spacer. These ratios serve as a common comparison frame: sign reversals of ξ with layer thickness or ferromagnet identity are used as fingerprints that distinguish orbital-dominated from spin-dominated torque, and thickness dependence of θ_i is used to separate electron-mediated from magnon-mediated contributions.

What would settle it

A re-measurement of Ta/Ni and Zr/Ni bilayers with the self-induced spin-torque ferromagnetic resonance contribution subtracted, or with harmonic-Hall detection that does not suffer that artifact, would settle whether the sign reversal in torque efficiency is truly orbital in origin. Independently, a decisive measurement of RuO2's magnetic ground state—for example by muon spin rotation or neutron diffraction on well-characterized films with controlled stoichiometry—would settle whether its reported spin-split-effect torques are genuine.

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Extended reading notes

Core claim

The paper's central claim, on its own terms, is that electron- and magnon-mediated torques now form a coherent map of mechanisms and materials: heavy metals and topological insulators supply conventional spin-orbit torque; low-crystal-symmetry materials, non-collinear antiferromagnets, and altermagnets supply z-polarized spin currents that enable field-free switching of perpendicular magnetization; light 3d, 4d, and 5d metals can act as orbital-current sources through the orbital Hall and orbital Rashba-Edelstein effects; and NiO- or BiFeO3-based sandwiches transmit torque as magnon currents through insulating antiferromagnets. The review argues that each branch has reached device-relevant demonstrations but that the underlying physics is still being settled, and it explicitly flags cases where the reported picture may be wrong: the positive orbital-torque efficiencies of Ta/Ni, Zr/Ni, and Cr-based stacks, and the altermagnetic classification of RuO2.

Load-bearing premise

The review contains no new measurements; its value rests entirely on the accuracy of the published results it summarizes, most critically the disputed positive orbital-torque efficiencies in Ta/Ni, Zr/Ni, and Cr-based stacks and the altermagnetic identification of RuO2.

Editorial extensions

If this is right

  • If the review's synthesis holds, field-free switching of perpendicular magnetization no longer requires external assist fields or complex symmetry-breaking geometries; it can be engineered into the spin source itself, via low-crystal-symmetry, non-collinear antiferromagnetic, or altermagnetic materials that emit z-polarized spin currents.
  • Orbital torque would make cheap and abundant 3d and 4d metals (Ti, Cr, Zr) viable torque sources, but the paper's own Section 5 shows this branch is conditional: if the Ta/Ni and Zr/Ni interpretations are artifacts, the claimed advantages of orbital currents would need revision.
  • Magnon torque through antiferromagnetic insulators would allow switching of a ferromagnet without passing charge current through it, and the BiFeO3 results add ferroelectric polarization as a voltage knob for torque efficiency.
  • The review implies that the immediate next step is methodological: a unified means of separating orbital from spin torque in the same device is needed before reported efficiencies can be compared.
  • Material integration constraints—thermal stability above 350 °C and compatibility with CMOS and MgO-MTJs—are the gating obstacle for industrial adoption, not the existence of a working torque mechanism.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the self-induced ST-FMR artifact criticism is correct, the strongest experimental signature of orbital torque (the Ta/Ni sign reversal) would lose its evidential weight, and the orbital-torque field would need a new anchor experiment in a system with negligible background torques.
  • The short orbital relaxation lengths predicted by first-principles scattering calculations (1–2 atomic layers) suggest that many 'orbital current' observations could instead be interfacial effects; a layer-resolved measurement with a nonmagnetic spacer of varying thickness inside the ferromagnet could test this directly.
  • The review's emphasis on 2D antiferromagnetic insulators as future magnon spacers suggests a concrete comparison: if interface smoothness rather than bulk magnon lifetime dominates transmission, then WTe2/NiO/CoFeB should outperform polycrystalline-NiO stacks with the same nominal thickness.
  • For altermagnets, the RuO2 controversy implies the field is one decisive experiment away from either consolidating or reclassifying the spin-split effect; strain- and stoichiometry-controlled sample series would be the natural test.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

2 major / 4 minor

Summary. This manuscript is a review of three torque mechanisms for magnetization manipulation: conventional spin-orbit torque (SOT), orbital torque (OT), and magnon torque (MT). It surveys the relevant material families, including heavy metals, topological insulators, low-crystal-symmetry materials, non-collinear antiferromagnets, altermagnets, orbital Hall and orbital Rashba-Edelstein materials, and NiO- and BiFeO3-based magnon devices. The review emphasizes generation mechanisms, switching demonstrations, and open questions, and it closes with a list of six remaining challenges, including unresolved disputes over the orbital-torque interpretation and the magnetic ground state of RuO2.

Significance. If accurate, this review provides a useful, current synthesis across three active subfields, assembling the key material classes and referencing the literature through 2024–2025. Its strengths include a balanced discussion of several controversies in the concluding section, a generally accurate reproduction of standard formulas, and explicit acknowledgment of conflicting reports on the Ta/Ni orbital torque and on the RuO2 magnetic ground state. The value is primarily bibliographic and pedagogical for a general condensed-matter and materials-science readership, rather than a novel technical contribution. The review's central claim, that it systematically and accurately covers electron- and magnon-mediated torques, is defensible but requires that contested experimental interpretations presented in the body be reconciled with the caveats stated in the conclusion.

major comments (2)
  1. [§3.1–3.2 vs. §5(4)] Sections 3.1 and 3.2 present the Ta/Ni sign reversal and the long orbital diffusion length as established facts: the text near Fig. 8(a) states that the sign reversal is "direct evidence of OT," and Section 3.1 states that the orbital diffusion length is much longer than the spin diffusion length and that this has been used to separate OT from SOT. However, Section 5, item (4) of the same manuscript reports that Liu et al. attribute the positive Ta/Ni torque to a self-induced ST-FMR artifact, that Rang et al. find orbital angular momentum relaxing within 1–2 atomic layers in transition-metal/FM bilayers, and that Song et al. find OHE contributions often overshadowed or canceled in ferromagnets such as Ni. These positions directly contradict the body-text claims. The review should qualify the body statements as one interpretation among several, or at minimum add an explicit cross-reference to Section 5(4) at the point where the Ta/Ni result is used as evidence. As written, the unresolved controversy is acknowledged in the conclusion but isolated from the section where the claim is load-bearing, which weakens the "systematic and accurate" synthesis asserted in the abstract.
  2. [§2.5 vs. §5(2)] Section 2.5 describes RuO2 as a d-wave altermagnet and presents the spin-split effect as the mechanism for generating spin currents, citing experimental field-free switching results without qualification. Section 5, item (2), however, states that the exact magnetic ground state of RuO2 remains controversial, citing multiple recent studies that question the altermagnetic order. The reader encountering Section 2.5 is not told that the material's altermagnetic ground state is disputed. The caveat should be integrated into Section 2.5 where RuO2 is first discussed, not deferred to the final section, so that the body does not present a contested experimental interpretation as established fact.
minor comments (4)
  1. [§4.2] The text refers to "Weishengzhao's group"; this should be "Weisheng Zhao's group."
  2. [§2.1, §3.1, §3.2] Several equations and symbols appear with garbled subscripts and superscripts (for example, the expression for the total torque efficiency and the definitions of θ_OH^eff, σ_OHE, and ξ_DL). These are likely font-conversion artifacts and need to be typeset correctly in the final version.
  3. [§4.2] The units for critical current density are inconsistent: the text uses "A·m^-2" in places (e.g., for the Bi2Se3/NiO/Py device) where "A·cm^-2" is presumably intended. Please standardize the units throughout.
  4. [References] Reference [148] is cited with a DOI instead of journal volume and page information; please update it to the published record if available.

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity found: the review contains no new derivations or fits, and it explicitly flags contested interpretations rather than relying on them.

full rationale

This paper is a narrative review of electron- and magnon-mediated torques. It does not claim to derive a new result, fit a parameter, or generate a prediction from a model. The central claim, from the abstract, is that the review 'systematically explores the generation and switching mechanisms' of the relevant torques; that claim is supported by citing and summarizing the primary literature. The equations that appear, such as J_S = (ℏ/2e)θ_SH(J_C×σ) in Section 2.1, ξ_SOT,total = ξ_OT + ξ_SOT in Section 3.1, and the orbital diffusion length relation in Section 3.1, are reproduced from referenced prior work and are used as explanatory definitions rather than as a derivation chain leading to new outputs. Quantitative values such as ξ_OT ≈ 0.78 for Zr/[Co/Pt]3, λ_OH ≈ 60 nm and 47 nm for Ti/Ni, and the various spin Hall conductivities are attributed to external experimental and theoretical papers, not to any fit performed here. The self-citations, notably Ref. [42] on z-spin generating materials and Ref. [245] on SnTe-based magnon devices, cite prior experimental or design work by the same group; they are used as examples of trends in the field, not as load-bearing premises that force any conclusion by definition. No uniqueness theorem from the authors' own prior work is invoked to forbid alternatives, and no renamed empirical pattern is presented as a new unification. The review also explicitly acknowledges the main validity risks to its surveyed narratives: Section 5, item (4) reports Liu et al.'s claim that the positive Ta/Ni torque is a self-induced ST-FMR artifact, Rang et al.'s first-principles result that orbital angular momentum relaxes within 1-2 atomic layers, and Song et al.'s result that OHE contributions are often overshadowed or canceled; Section 5, item (2) notes that the magnetic ground state of RuO2 remains controversial. These caveats are real accuracy concerns and could indicate internal tension between the body text and the conclusions, but they are not circularity. In particular, the paper does not define its inputs in terms of its outputs, does not fit a parameter and then relabel it as a prediction, and does not rest its central synthesis on a self-referential chain. Accordingly, the honest finding is no significant circularity, with score 0.

Assumptions & free parameters 0 free parameters · 2 assumptions · 0 invented entities

The review introduces no new free parameters, no new axioms beyond standard physics and the assumption of accurate reporting, and no new entities. All material is drawn from the cited literature.

assumptions (2)
  • standard math The standard spin Hall effect and Rashba-Edelstein effect formulas (for example JS = (ℏ/2e)θ_SH (JC×σ) and the torque components τ_DL and τ_FL in Section 2.1) are correct and apply to the systems discussed.
    The review invokes these background formulas without derivation because they are established results in the cited literature.
  • domain assumption The cited experimental measurements are faithfully represented and their interpretations reflect the current consensus at the time of writing.
    The review is a synthesis of other groups' experiments and calculations; if any cited result is misreported, the corresponding section of the review is wrong. The authors flag some contested cases in Section 5, but most sections present cited results as established.

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Cite this review

Pith. "Pith review of Recent progress on electron- and magnon-mediated torques." pith.science (2026). https://pith.science/paper/BOLFTYST

@misc{pith2026250509257,
  author       = {Pith},
  title        = {Pith review of: Recent progress on electron- and magnon-mediated torques},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/BOLFTYST}},
  note         = {Machine review of arXiv:2505.09257}
}
read the original abstract

The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic random-access memory due to its ultrafast switching speed and low power consumption. This review systematically explores the generation and switching mechanisms of electron-mediated torques (including both conventional SOTs and orbital torques) and magnon-mediated torques. We discuss key materials that enable these effects: heavy metals, topological insulators, low-crystal-symmetry materials, non-collinear antiferromagnets, and altermagnets for conventional SOTs; 3d, 4d, and 5d transition metals for orbital torques; and antiferromagnetic insulator NiO- and multiferroic BiFeO3-based sandwich structures for magnon torques. We emphasize that although key components of SOT devices have been demonstrated, numerous promising materials and critical questions regarding their underlying mechanisms remain to be explored. Therefore, this field represents a dynamic and rapidly evolving frontier in spintronics, offering significant potential for advancing next-generation information storage and computational technologies.

Figures

Figures reproduced from arXiv: 2505.09257 by the authors.

Figure 1
Figure 1. Schematic overview of materials and device structures for conventional spin-orbit torques, orbital torques, and magnon torques. Reprinted with permission from Ref. [23-28]. Copyright 2013 by Springer Nature. Copyright 2019 by American Association for the Advancement of Science [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. The principal diagram of (a) spin Hall effect and (b) Rashba-Edelstein effect. (c) Direction of anti-damping torque (blue arrow) and field-like torque (red arrow). Green arrows indicate the magnetization direction of the ferromagnetic layer. Spin current generation is primarily governed by two well-established mechanisms: the bulk spin Hall effect (SHE) and the interfacial Rashba-Edelstein effect (REE). The SHE occu… view at source ↗
Figure 3
Figure 3. Spin-orbit torque based on heavy metals and topological insulators. (a) Illustration of spin￾orbit torque in a Co/Pt/AlOx heterostructure. (b) Current-induced magnetization switching in Pt/Co/AlOx heterostructures. Reprinted with permission from Ref. [15]. Copyright 2012 by American Physical Society. (c) Anti-damping torque efficiency as a function of thickness in heavy metal/Co/AlOx layers, where heavy metals are P… view at source ↗
Figures from the paper (11 more)
Figure 4
Figure 4. Figure 4: Spin-orbit torque based on low-crystal-symmetry materials. (a) Crystal structure of Td-WTe2 (Pmn21), where Mx and My represent the pure mirror and glide mirror plane, respectively. (b) Schematic of the spin-orbit torque device in a heavy metal/ferromagnet bilayer, wher…
Figure 5
Figure 5. Figure 5: The current-driven magnetization switching based on non-collinear antiferromagnets. (a) Kagome arrangements of Mn-based compounds, leading to a triangular magnetic order. (b) Spin accumulation at the Mn3Sn-NiFe interface: magnetic-field dependence of resistance measure…
Figure 6
Figure 6. Figure 6: The spin-split effect and field-free switching of perpendicular magnetization based on altermagnets. Schematic diagrams of spin configurations and electronic bands of (a) collinear ferromagnet, (b) antiferromagnet, and (c) altermagnet. (d) The calculated spin torque co…
Figure 7
Figure 7. Figure 7: The illustration of magnetization switching by orbital torque based on the orbital Hall effect in (a) non-magnetic layer/ferromagnetic layer (NM/FM) heterostructure and (b) NM1/NM2/FM heterostructure, where NM2 is inserted as an orbital-spin conversion layer. Electrons…
Figure 8
Figure 8. Figure 8: The orbital Hall effect in 4d and 5d metals and the magnetization switching driven by them. (a) The anti-damping torque efficiency (ξDL) and the effective spin Hall conductivity (DL) for various ferromagnet/non-magnet (FM/NM) bilayers (FM = FeB, CoFeB, Co, Ni, NM = Pt…
Figure 9
Figure 9. Figure 9: The orbital Hall effect in 3d metals and the magnetization switching driven by them. (a) Schematic illustration of orbital torque in the Ti/Ni bilayer. (b) Ti thickness (tTi) dependence of ξDL of the Ti/Ni bilayers. Reprinted with permission from Ref. [26]. Copyright 2…
Figure 10
Figure 10. Figure 10: The orbital torque efficiency of orbital Rashba-Edelstein effect material and the magnetization switching driven by orbital Rashba-Edelstein effect. (a) ξDL as a function of Pt thickness for TmIG/Pt (series A) and TmIG/Pt/CuOx (series B). Reprinted with permission fro…
Figure 11
Figure 11. Figure 11: The principal diagram of magnon torque. A magnon is a quasiparticle that represents the quantized excitations of spin waves in magnetic materials[226, 227]. When magnons propagate collectively from one region to another, their coordinated motion gives rise to a magnon…
Figure 12
Figure 12. Figure 12: Magnetization switching by magnon torques through an antiferromagnetic insulator NiO. (a) Illustration of the structure of magnon torques switching device with an isolated NiFe rectangle defined on top of the NiO layer. (b) A typical spin-torque ferromagnetic resonanc…
Figure 13
Figure 13. Figure 13: Field-free switching of perpendicular magnetization by magnon torques. (a) Magnetization switching by magnon torque in WTe2/NiO/CoFeB. (b) Spin-torque ferromagnetic resonance spectra of WTe2 (8 nm)/NiO (25 nm)/Py with currents applied along the a-axis of WTe2. (c) NiO…
Figure 14
Figure 14. Figure 14: The magnon torque in BiFeO3 under the control of ferroelectric polarization. (a) Schematic of a La0.7Sr0.3MnO3/BiFeO3(BFO)/SrIrO3(SIO) heterostructure under an external electric field, with the BiFeO3 ferroelectric polarization under negative and positive biases. (b) …

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Reference graph

Works this paper leans on

263 extracted references · 68 canonical work pages

  1. [1]

    Today 20 530

    Bhatti S, Sbiaa R, Hirohata A, Ohno H, Fukami S and Piramanayagam S N 2017 Mater. Today 20 530

  2. [2]

    Electron

    Zidan M A, Strachan J P and Lu W D 2018 Nat. Electron. 1 22

  3. [3]

    2020 Nat

    Dieny B, Prejbeanu I L, Garello K, et al. 2020 Nat. Electron. 3 446

  4. [4]

    Yang H, Valenzuela S O, Chshiev M, Couet S, Dieny B, Dlubak B, Fert A, Garello K, Jamet M, Jeong D-E, Lee K, Lee T, Martin M-B, Kar G S, Sénéor P, Shin H-J and Roche S 2022 Nature 606 663

  5. [5]

    Nguyen V D, Rao S, Wostyn K and Couet S 2024 npj Spintron. 2 48

  6. [6]

    Parkin S S, Hayashi M and Thomas L 2008 Science 320 190

  7. [7]

    Ralph D C and Stiles M D 2008 J. Magn. Magn. Mater. 320 1190

  8. [8]

    Nanotechnol

    Kent A D and Worledge D C 2015 Nat. Nanotechnol. 10 187

Show all 263 references
  1. [9]

    2019 IEEE International Electron Devices Meeting (IEDM), December 7-11, 2019, San Francisco, CA, USA, p

    Alzate J G, Arslan U, Bai P, et al. 2019 IEEE International Electron Devices Meeting (IEDM), December 7-11, 2019, San Francisco, CA, USA, p. 2.4.1-2.4.4

  2. [10]

    Mater Sci

    Song C, Zhang R, Liao L, Zhou Y , Zhou X, Chen R, You Y , Chen X and Pan F 2021 Prog. Mater Sci. 118 100761

  3. [11]

    Shao Q, Li P, Liu L, Yang H, Fukami S, Razavi A, Wu H, Wang K, Freimuth F, Mokrousov Y , Stiles M D, Emori S, Hoffmann A, Akerman J, Roy K, Wang J- P, Yang S-H, Garello K and Zhang W 2021 IEEE Trans. Magn. 57 1

  4. [12]

    Zhu L 2023 Adv. Mater . 35 2300853

  5. [13]

    Miron I M, Garello K, Gaudin G, Zermatten P-J, Costache M V , Auffret S, Bandiera S, Rodmacq B, Schuhl A and Gambardella P 2011 Nature 476 189

  6. [14]

    Liu L, Pai C-F, Li Y , Tseng H W, Ralph D C and Buhrman R A 2012 Science Chinese Physics B 336 555

  7. [15]

    Liu L, Lee O J, Gudmundsen T J, Ralph D C and Buhrman R A 2012 Phys. Rev. Lett. 109 096602

  8. [16]

    Mellnik A R, Lee J S, Richardella A, Grab J L, Mintun P J, Fischer M H, Vaezi A, Manchon A, Kim E A, Samarth N and Ralph D C 2014 Nature 511 449

  9. [17]

    Aradhya S V , Rowlands G E, Oh J, Ralph D C and Buhrman R A 2016 Nano Lett. 16 5987

  10. [18]

    Shi S, Ou Y , Aradhya S V , Ralph D C and Buhrman R A 2018 Phys. Rev. Appl. 9 011002

  11. [19]

    Electron

    Zhu L, Zhu L, Shi S, Ralph D C and Buhrman R A 2020 Adv. Electron. Mater. 6 1901131

  12. [20]

    Nanotechnol

    Grimaldi E, Krizakova V , Sala G, Yasin F, Couet S, Sankar Kar G, Garello K and Gambardella P 2020 Nat. Nanotechnol. 15 111

  13. [21]

    Yang D, Kim T, Lee K, Xu C, Liu Y , Wang F, Zhao S, Kumar D and Yang H 2024 Nat. Commun. 15 4046

  14. [22]

    Yang Q, Han D, Zhao S, Kang J, Wang F, Lee S-C, Lei J, Lee K-J, Park B-G and Yang H 2024 Nat. Commun. 15 1814

  15. [23]

    Emori S, Bauer U, Ahn S-M, Martinez E and Beach G S D 2013 Nat. Mater. 12 611

  16. [24]

    Wang Y , Zhu D, Yang Y , Lee K, Mishra R, Go G, Oh S-H, Kim D-H, Cai K, Liu E, Pollard S D, Shi S, Lee J, Teo K L, Wu Y , Lee K-J and Yang H 2019 Science 366 1125

  17. [25]

    Ding S, Ross A, Go D, Baldrati L, Ren Z, Freimuth F, Becker S, Kammerbauer F, Yang J, Jakob G, Mokrousov Y and Kläui M 2020 Phys. Rev. Lett. 125 177201

  18. [26]

    Choi Y-G, Jo D, Ko K-H, Go D, Kim K-H, Park H G, Kim C, Min B-C, Choi G-M and Lee H-W 2023 Nature 619 52

  19. [27]

    Wang F, Shi G, Kim K-W, Park H-J, Jang J G, Tan H R, Lin M, Liu Y , Kim T, Yang D, Zhao S, Lee K, Yang S, Soumyanarayanan A, Lee K-J and Yang H 2024 Nat. Mater. 23 768

  20. [28]

    2024 Nat

    Huang X, Chen X, Li Y, et al. 2024 Nat. Mater. 23 898

  21. [29]

    Ando K, Takahashi S, Harii K, Sasage K, Ieda J, Maekawa S and Saitoh E 2008 Phys. Rev. Lett. 101 036601

  22. [30]

    Nanotechnol

    Fukami S, Anekawa T, Zhang C and Ohno H 2016 Nat. Nanotechnol. 11 621

  23. [31]

    2019 IEEE International Electron Devices Meeting (IEDM), 7-11 Dec

    Honjo H, Nguyen T V A, Watanabe T, et al. 2019 IEEE International Electron Devices Meeting (IEDM), 7-11 Dec. 2019, p. 28.5.1-28.5.4

  24. [32]

    Lin W W, Sang H, Liu D, Jiang Z S, Hu A, Wu X S and Xiao G 2006 J. Appl. Phys. 99 08G518

  25. [33]

    An H, Ohno T, Kanno Y , Kageyama Y , Monnai Y , Maki H, Shi J and Ando K 2018 Sci. Adv. 4 eaar2250

  26. [34]

    Fan Y , Upadhyaya P, Kou X, Lang M, Takei S, Wang Z, Tang J, He L, Chang L-T, Montazeri M, Yu G, Jiang W, Nie T, Schwartz R N, Tserkovnyak Y and Wang K L 2014 Nat. Mater. 13 699

  27. [35]

    Han J, Richardella A, Siddiqui S A, Finley J, Samarth N and Liu L 2017 Phys. Rev. Lett. 119 077702 Chinese Physics B

  28. [36]

    Wang Y , Zhu D, Wu Y , Yang Y , Yu J, Ramaswamy R, Mishra R, Shi S, Elyasi M, Teo K-L, Wu Y and Yang H 2017 Nat. Commun. 8 1364

  29. [37]

    Dc M, Grassi R, Chen J-Y , Jamali M, Reifsnyder Hickey D, Zhang D, Zhao Z, Li H, Quarterman P, Lv Y , Li M, Manchon A, Mkhoyan K A, Low T and Wang J-P 2018 Nat. Mater. 17 800

  30. [38]

    Wu H, Zhang P, Deng P, Lan Q, Pan Q, Razavi S A, Che X, Huang L, Dai B, Wong K, Han X and Wang K L 2019 Phys. Rev. Lett. 123 207205

  31. [39]

    Wang Y and Yang H 2022 Acc. Mater . Res. 3 1061

  32. [40]

    Wang H, Wu H, Zhang J, Liu Y , Chen D, Pandey C, Yin J, Wei D, Lei N, Shi S, Lu H, Li P, Fert A, Wang K L, Nie T and Zhao W 2023 Nat. Commun. 14 5173

  33. [41]

    2024 Adv

    Tai L, He H, Chong S K, et al. 2024 Adv. Mater . 36 2406772

  34. [42]

    Yu Z, Yang L, Guo K, Zhao P, Hou R, Du Y , Lai J M, Quan Z, Wang F and Xu X 2025 Adv. Funct. Mater. 2505170

  35. [43]

    Cai K, Yang M, Ju H, Wang S, Ji Y , Li B, Edmonds K W, Sheng Y , Zhang B, Zhang N, Liu S, Zheng H and Wang K 2017 Nat. Mater. 16 712

  36. [44]

    Liu Q and Zhu L 2022 Appl. Phys. Rev. 9 041401

  37. [45]

    Zheng Z, Zhang Y , Lopez-Dominguez V , Sánchez-Tejerina L, Shi J, Feng X, Chen L, Wang Z, Zhang Z, Zhang K, Hong B, Xu Y , Zhang Y , Carpentieri M, Fert A, Finocchio G, Zhao W and Khalili Amiri P 2021 Nat. Commun. 12 4555

  38. [46]

    Xie X, Zhao X, Dong Y , Qu X, Zheng K, Han X, Han X, Fan Y , Bai L, Chen Y , Dai Y , Tian Y and Yan S 2021 Nat. Commun. 12 2473

  39. [47]

    Wu H, Nance J, Razavi S A, Lujan D, Dai B, Liu Y , He H, Cui B, Wu D, Wong K, Sobotkiewich K, Li X, Carman G P and Wang K L 2020 Nano Lett. 21 515

  40. [48]

    Nanotechnol

    Yu G, Upadhyaya P, Fan Y , Alzate J G, Jiang W, Wong K L, Takei S, Bender S A, Chang L-T, Jiang Y , Lang M, Tang J, Wang Y , Tserkovnyak Y , Amiri P K and Wang K L 2014 Nat. Nanotechnol. 9 548

  41. [49]

    MacNeill D, Stiehl G M, Guimaraes M H D, Buhrman R A, Park J and Ralph D C 2016 Nat. Phys. 13 300

  42. [50]

    Guimarães M H D, Stiehl G M, MacNeill D, Reynolds N D and Ralph D C 2018 Nano Lett. 18 1311

  43. [51]

    Nanotechnol

    Shi S, Liang S, Zhu Z, Cai K, Pollard S D, Wang Y , Wang J, Wang Q, He P, Yu J, Eda G, Liang G and Yang H 2019 Nat. Nanotechnol. 14 945

  44. [52]

    Stiehl G M, MacNeill D, Sivadas N, El Baggari I, Guimarães M H D, Reynolds N D, Kourkoutis L F, Fennie C J, Buhrman R A and Ralph D C 2019 Acs Nano 13 2599

  45. [53]

    Stiehl G M, Li R, Gupta V , Baggari I E, Jiang S, Xie H, Kourkoutis L F, Mak K F, Shan J, Buhrman R A and Ralph D C 2019 Phys. Rev. B 100 184402

  46. [54]

    Quantum Technol

    Shi S, Li J, Hsu C H, Lee K, Wang Y , Yang L, Wang J, Wang Q, Wu H, Zhang W, Eda G, Liang G, Chang H and Yang H 2021 Adv. Quantum Technol. 4 2100038

  47. [55]

    Nanotechnol

    Liu L, Zhou C, Shu X, Li C, Zhao T, Lin W, Deng J, Xie Q, Chen S, Zhou J, Guo R, Wang H, Yu J, Shi S, Yang P, Pennycook S, Manchon A and Chen J 2021 Nat. Nanotechnol. 16 277

  48. [56]

    Kao I H, Muzzio R, Zhang H, Zhu M, Gobbo J, Y uan S, Weber D, Rao R, Li J, Chinese Physics B Edgar J H, Goldberger J E, Yan J, Mandrus D G, Hwang J, Cheng R, Katoch J and Singh S 2022 Nat. Mater . 21 1029

  49. [57]

    Electron

    Liu Y , Shi G, Kumar D, Kim T, Shi S, Yang D, Zhang J, Zhang C, Wang F, Yang S, Pu Y , Yu P, Cai K and Yang H 2023 Nat. Electron. 6 732

  50. [58]

    2023 Sci

    Zhang Y , Xu H, Jia K, et al. 2023 Sci. Adv. 9 eadg9819

  51. [59]

    Kajale S N, Nguyen T, Hung N T, Li M and Sarkar D 2024 Sci. Adv. 10 eadk8669

  52. [60]

    Zhang Y Y , Ren X L, Liu R Z, Chen Z H, Wu X Z, Pang J, Wang W, Lan G B, Watanabe K, Taniguchi T, Shi Y G, Yu G Q and Shao Q M 2024 Adv. Mater . 36 2406464

  53. [61]

    Železný J, Zhang Y , Felser C and Yan B 2017 Phys. Rev. Lett. 119 187204

  54. [62]

    Kimata M, Chen H, Kondou K, Sugimoto S, Muduli P K, Ikhlas M, Omori Y , Tomita T, MacDonald A H, Nakatsuji S and Otani Y 2019 Nature 565 627

  55. [63]

    Liu Y , Liu Y F, Chen M J, Srivastava S, He P, Teo K L, Phung T, Yang S H and Yang H 2019 Phys. Rev. Appl. 12 064046

  56. [64]

    2020 Nat

    Nan T, Quintela C X, Irwin J, et al. 2020 Nat. Commun. 11 4671

  57. [65]

    2021 Nat

    Chen X Z, Shi S Y , Shi G Y, et al. 2021 Nat. Mater. 20 800

  58. [66]

    You Y F, Bai H, Feng X Y , Fan X L, Han L, Zhou X F, Zhou Y J, Zhang R Q, Chen T J, Pan F and Song C 2021 Nat. Commun. 12 6524

  59. [67]

    Hu S, Shao D F, Yang H L, Pan C, Fu Z X, Tang M, Yang Y M, Fan W J, Zhou S M, Tsymbal E Y and Qiu X P 2022 Nat. Commun. 13 4447

  60. [68]

    Electron

    Meng D, Chen S, Ren C, Li J, Lan G, Li C, Liu Y , Su Y , Yu G, Chai G, Xiong R, Zhao W, Yang G and Liang S 2023 Adv. Electron. Mater. 10 2300665

  61. [69]

    Cao C, Chen S, Xiao R-C, Zhu Z, Yu G, Wang Y , Qiu X, Liu L, Zhao T, Shao D-F, Xu Y , Chen J and Zhan Q 2023 Nat. Commun. 14 5873

  62. [70]

    Han R K, Zhao X P, Qin H R, Sun H L, Wang H L, Wei D H and Zhao J H 2023 Phys. Rev. B 107 134422

  63. [71]

    Pu Y , Shi G, Yang Q, Yang D, Wang F, Zhang C and Yang H 2024 Adv. Funct. Mater. 34 2400143

  64. [72]

    Rimmler B H, Pal B and Parkin S S P 2024 Nat. Rev. Mater. 10 109

  65. [73]

    Bai H, Han L, Feng X Y , Zhou Y J, Su R X, Wang Q, Liao L Y , Zhu W X, Chen X Z, Pan F, Fan X L and Song C 2022 Phys. Rev. Lett. 128 197202

  66. [74]

    Electron

    Bose A, Schreiber N J, Jain R, Shao D-F, Nair H P, Sun J, Zhang X S, Muller D A, Tsymbal E Y , Schlom D G and Ralph D C 2022 Nat. Electron. 5 267

  67. [75]

    González-Hernández R, Šmejkal L, Výborný K, Yahagi Y , Sinova J, Jungwirth T and Železný J 2021 Phys. Rev. Lett. 126 127701

  68. [76]

    Karube S, Tanaka T, Sugawara D, Kadoguchi N, Kohda M and Nitta J 2022 Phys. Rev. Lett. 129 137201

  69. [77]

    Zhang Y , Bai H, Han L, Chen C, Zhou Y , Back C H, Pan F, Wang Y and Song C 2024 Adv. Funct. Mater. 34 2313332

  70. [78]

    Liu Q, Lin X, Shaked A, Nie Z, Yu G and Zhu L 2024 Adv. Mater . 36 2406552

  71. [79]

    Lee D, Go D, Park H-J, Jeong W, Ko H-W, Yun D, Jo D, Lee S, Go G, Oh J H, Kim K-J, Park B-G, Min B-C, Koo H C, Lee H-W, Lee O and Lee K-J 2021 Nat. Commun. 12 6710 Chinese Physics B

  72. [80]

    Hayashi H, Jo D, Go D, Gao T H, Haku S S, Mokrousov Y , Lee H W and Ando K 2023 Commun. Phys. 6 32

  73. [81]

    Electron

    Wang P, Chen F, Yang Y H, Hu S, Li Y , Wang W H, Zhang D L and Jiang Y 2025 Adv. Electron. Mater. 11 2400554

  74. [82]

    Lee S, Kang M G, Go D, Kim D, Kang J H, Lee T, Lee G H, Kang J, Lee N J, Mokrousov Y , Kim S, Kim K J, Lee K J and Park B G 2021 Commun. Phys. 4 234

  75. [83]

    Guo Q, Ren Z, Bai H, Wang X, Yu G, He W, Teng J and Zhu T 2021 Phys. Rev. B 104 224429

  76. [84]

    Sala G and Gambardella P 2022 Phys. Rev. Res. 4 033037

  77. [85]

    Liao L, Xue F, Han L, Kim J, Zhang R, Li L, Liu J, Kou X, Song C, Pan F and Otani Y 2022 Phys. Rev. B 105 104434

  78. [86]

    Bose A, Kammerbauer F, Gupta R, Go D, Mokrousov Y , Jakob G and Kläui M 2023 Phys. Rev. B 107 134423

  79. [87]

    Yang Y , Wang P, Chen J, Zhang D, Pan C, Hu S, Wang T, Yue W, Chen C, Jiang W, Zhu L, Qiu X, Yao Y , Li Y , Wang W and Jiang Y 2024 Nat. Commun. 15 8645

  80. [88]

    Cornelissen L J, Liu J, Duine R A, Youssef J B and van Wees B J 2015 Nat. Phys. 11 1022

  81. [89]

    Kajiwara Y , Harii K, Takahashi S, Ohe J, Uchida K, Mizuguchi M, Umezawa H, Kawai H, Ando K, Takanashi K, Maekawa S and Saitoh E 2010 Nature 464 262

  82. [90]

    Lebrun R, Ross A, Bender S A, Qaiumzadeh A, Baldrati L, Cramer J, Brataas A, Duine R A and Kläui M 2018 Nature 561 222

  83. [91]

    Nanotechnol

    Lee K, Lee D-K, Yang D, Mishra R, Kim D-J, Liu S, Xiong Q, Kim S K, Lee K-J and Yang H 2021 Nat. Nanotechnol. 16 1337

  84. [92]

    Dyakonov M I and Perel V 1971 Phys. Lett. A 35 459

  85. [93]

    Sinova J, Valenzuela S O, Wunderlich J, Back C H and Jungwirth T 2015 Rev. Mod. Phys. 87 1213

  86. [94]

    Edelstein V M 1990 Solid State Commun. 73 233

  87. [95]

    Manchon A, Koo H C, Nitta J, Frolov S M and Duine R A 2015 Nat. Mater. 14 871

  88. [96]

    Nanotechnol

    Fang D, Kurebayashi H, Wunderlich J, Výborný K, Zârbo L P, Campion R P, Casiraghi A, Gallagher B L, Jungwirth T and Ferguson A J 2011 Nat. Nanotechnol. 6 413

  89. [97]

    Liu L, Moriyama T, Ralph D C and Buhrman R A 2011 Phys. Rev. Lett. 106 036601

  90. [98]

    Manchon A, Železný J, Miron I M, Jungwirth T, Sinova J, Thiaville A, Garello K and Gambardella P 2019 Rev. Mod. Phys. 91 035004

  91. [99]

    Pai C-F, Liu L, Li Y , Tseng H W, Ralph D C and Buhrman R A 2012 Appl. Phys. Lett. 101 122404

  92. [100]

    Zhu L, Ralph D C and Buhrman R A 2018 Phys. Rev. Appl. 10 031001

  93. [101]

    Laczkowski P, Fu Y , Yang H, Rojas-Sánchez J C, Noel P, Pham V T, Zahnd G, Deranlot C, Collin S, Bouard C, Warin P, Maurel V , Chshiev M, Marty A, Attané Chinese Physics B J P, Fert A, Jaffrès H, Vila L and George J M 2017 Phys. Rev. B 96 140405

  94. [102]

    Laczkowski P, Rojas-Sánchez J C, Savero-Torres W, Jaffrès H, Reyren N, Deranlot C, Notin L, Beigné C, Marty A, Attané J P, Vila L, George J M and Fert A 2014 Appl. Phys. Lett. 104 142403

  95. [103]

    Zhu L, Sobotkiewich K, Ma X, Li X, Ralph D C and Buhrman R A 2019 Adv. Funct. Mater. 29 1805822

  96. [104]

    Khang N H D, Ueda Y and Hai P N 2018 Nat. Mater. 17 808

  97. [105]

    Zhu L, Zhu L, Sui M, Ralph D C and Buhrman R A 2019 Sci. Adv. 5 eaav8025

  98. [106]

    Lin X, Li J, Zhu L, Xie X, Liu Q, Wei D, Yuan G and Zhu L 2022 Phys. Rev. B 106 L140407

  99. [107]

    Liu Q, Li J, Zhu L, Lin X, Xie X and Zhu L 2022 Phys. Rev. Appl. 18 054079

  100. [108]

    Mihai Miron I, Gaudin G, Auffret S, Rodmacq B, Schuhl A, Pizzini S, V ogel J and Gambardella P 2010 Nat. Mater. 9 230

  101. [109]

    Wang Y , Zhang Q, Xu H, Guo X, Chang Y , Zhang J, He X, Zuo Y , Cui B and Xi L 2024 Chin. Phys. Lett. 41 067502

  102. [110]

    Hasan M Z and Kane C L 2010 Rev. Mod. Phys. 82 3045

  103. [111]

    Qi X-L and Zhang S-C 2011 Rev. Mod. Phys. 83 1057

  104. [112]

    Wu H, Xu Y , Deng P, Pan Q, Razavi S A, Wong K, Huang L, Dai B, Shao Q, Yu G, Han X, Rojas‐Sánchez J C, Mangin S and Wang K L 2019 Adv. Mater . 31 1901681

  105. [113]

    Cui B, Chen A, Zhang X, Fang B, Zeng Z, Zhang P, Zhang J, He W, Yu G, Yan P, Han X, Wang K L, Zhang X and Wu H 2023 Adv. Mater. 35 2302350

  106. [114]

    Choi G S, Park S, An E S, Bae J, Shin I, Kang B T, Won C J, Cheong S W, Lee H W, Lee G H, Cho W J and Kim J S 2024 Adv. Sci. 11 2400893

  107. [115]

    Wang Y , Deorani P, Banerjee K, Koirala N, Brahlek M, Oh S and Yang H 2015 Phys. Rev. Lett. 114 257202

  108. [116]

    Ramaswamy R, Dutta T, Liang S, Yang G, Saifullah M S M and Yang H 2019 J. Phys. D: Appl. Phys. 52 224001

  109. [117]

    Nanotechnol

    Fan Y , Kou X, Upadhyaya P, Shao Q, Pan L, Lang M, Che X, Tang J, Montazeri M, Murata K, Chang L-T, Akyol M, Yu G, Nie T, Wong K L, Liu J, Wang Y , Tserkovnyak Y and Wang K L 2016 Nat. Nanotechnol. 11 352

  110. [118]

    36.3.1-36.3.4

    Shao Q, Wu H, Pan Q, Zhang P, Pan L, Wong K, Che X and Wang K L 2018 IEEE International Electron Devices Meeting (IEDM), December 1-5, 2018, San Francisco, CA, USA, p. 36.3.1-36.3.4

  111. [119]

    Che X Y , Pan Q J, Vareskic B, Zou J Y , Pan L, Zhang P, Yin G, Wu H, Shao Q M, Deng P and Wang K L 2020 Adv. Mater . 32 1907661

  112. [120]

    Kondou K, Yoshimi R, Tsukazaki A, Fukuma Y , Matsuno J, Takahashi K S, Kawasaki M, Tokura Y and Otani Y 2016 Nat. Phys. 12 1027

  113. [121]

    Iyer V , Chen Y P and Xu X 2018 Phys. Rev. Lett. 121 026807

  114. [122]

    Hu S, Liu E, Bai Y , Zhuang M, Liu W, Lei M, Zhang Y , Xu G, Xu F and Mangin S 2024 Phys. Rev. B 109 224407

  115. [123]

    Chen S, Yu J, Xie Q, Zhang X, Lin W, Liu L, Zhou J, Shu X, Guo R, Zhang Z and Chen J 2019 ACS Appl. Mater. Inter . 11 30446

  116. [124]

    Fukami S, Zhang C, DuttaGupta S, Kurenkov A and Ohno H 2016 Nat. Mater . Chinese Physics B 15 535

  117. [125]

    Nanotechnol

    Oh Y-W, Chris Baek S-h, Kim Y M, Lee H Y , Lee K-D, Yang C-G, Park E-S, Lee K-S, Kim K-W, Go G, Jeong J-R, Min B-C, Lee H-W, Lee K-J and Park B- G 2016 Nat. Nanotechnol. 11 878

  118. [126]

    You L, Lee O, Bhowmik D, Labanowski D, Hong J, Bokor J and Salahuddin S 2015 Proc. Natl. Acad. Sci. 112 10310

  119. [127]

    P V M, Ganesh K R and Kumar P S A 2017 Phys. Rev. B 96 104412

  120. [128]

    Nanotechnol

    Liu L, Qin Q, Lin W, Li C, Xie Q, He S, Shu X, Zhou C, Lim Z, Yu J, Lu W, Li M, Yan X, Pennycook S J and Chen J 2019 Nat. Nanotechnol. 14 939

  121. [129]

    Liang Y , Yi D, Nan T, Liu S, Zhao L, Zhang Y , Chen H, Xu T, Dai M, Hu J-M, Xu B, Shi J, Jiang W, Yu R and Lin Y-H 2023 Nat. Commun. 14 5458

  122. [130]

    Electron

    Wang M, Cai W, Zhu D, Wang Z, Kan J, Zhao Z, Cao K, Wang Z, Zhang Y , Zhang T, Park C, Wang J-P, Fert A and Zhao W 2018 Nat. Electron. 1 582

  123. [131]

    Fernández-Pacheco A, Vedmedenko E, Ummelen F, Mansell R, Petit D and Cowburn R P 2019 Nat. Mater. 18 679

  124. [132]

    He W, Wan C, Zheng C, Wang Y , Wang X, Ma T, Wang Y , Guo C, Luo X, Stebliy M E, Yu G, Liu Y , Ognev A V , Samardak A S and Han X 2022 Nano Lett. 22 6857

  125. [133]

    2023 Nat

    Dc M, Shao D-F, Hou V D H, et al. 2023 Nat. Mater. 22 591

  126. [134]

    Patton M, Gurung G, Shao D F, Noh G, Mittelstaedt J A, Mazur M, Kim J W, Ryan P J, Tsymbal E Y , Choi S Y , Ralph D C, Rzchowski M S, Nan T and Eom C B 2023 Adv. Mater . 35 2301608

  127. [135]

    2024 Nat

    Han F, Zhang J, Yang F, et al. 2024 Nat. Commun. 15 7299

  128. [136]

    Xu H, Wei J, Zhou H, Feng J, Xu T, Du H, He C, Huang Y , Zhang J, Liu Y , Wu H C, Guo C, Wang X, Guang Y , Wei H, Peng Y , Jiang W, Yu G and Han X 2020 Adv. Mater . 32 2000513

  129. [137]

    MacNeill D, Stiehl G M, Guimarães M H D, Reynolds N D, Buhrman R A and Ralph D C 2017 Phys. Rev. B 96 054450

  130. [138]

    2022 Sci

    Wang L, Xiong J, Cheng B, et al. 2022 Sci. Adv. 8 eabq6833

  131. [139]

    Shi G, Wang F, Liu Y , Li Z, Tan H R, Yang D, Soumyanarayanan A and Yang H 2024 Nano Lett. 24 7302

  132. [140]

    9 051114

    Xie Q, Lin W, Sarkar S, Shu X, Chen S, Liu L, Zhao T, Zhou C, Wang H, Zhou J, Gradečak S and Chen J 2021 APL Mater . 9 051114

  133. [141]

    Wei L J, Yin X M, Liu P, Zhang P C, Niu W, Liu P, Yang J J, Peng J C, Huang F, Liu R B, Chen J R, Chen L A, Zhou S, Li F, Niu X H, Du J and Pu Y 2023 Appl. Phys. Lett. 123 252404

  134. [142]

    Wang X, Wu H, Qiu R, Huang X, Zhang J, Long J, Yao Y , Zhao Y , Zhu Z, Wang J, Shi S, Chang H and Zhao W 2023 Cell Rep. Phys. Sci. 4 101468

  135. [143]

    Liang S, Shi S, Hsu C H, Cai K, Wang Y , He P, Wu Y , Pereira V M and Yang H 2020 Adv. Mater . 32 2002799

  136. [144]

    Patton M, Pharis D A, Gurung G, Huang X, Noh G, Tsymbal E Y , Choi S Y , Ralph D C, Rzchowski M S and Eom C B 2025 Adv. Mater . 37 2414267

  137. [145]

    Lu S, Meng D, Khan A, Wang Z, Chen S and Liang S 2024 Chinese Physics B 33 107501 Chinese Physics B

  138. [146]

    Gurung G, Elekhtiar M, Luo Q-Q, Shao D-F and Tsymbal E Y 2024 Nat. Commun. 15 10242

  139. [147]

    Bai L, Feng W, Liu S, Šmejkal L, Mokrousov Y and Yao Y 2024 Adv. Funct. Mater. 34 2409327

  140. [148]

    Song C, Bai H, Zhou Z, Han L, Reichlova H, Dil J H, Liu J, Chen X and Pan F 2025 https://doi.org/10.1038/s41578-025-00779-1

  141. [149]

    Nagaosa N, Sinova J, Onoda S, MacDonald A H and Ong N P 2010 Rev. Mod. Phys. 82 1539

  142. [150]

    Nakatsuji S, Kiyohara N and Higo T 2015 Nature 527 212

  143. [151]

    Kondou K, Chen H, Tomita T, Ikhlas M, Higo T, MacDonald A H, Nakatsuji S and Otani Y 2021 Nat. Commun. 12 6491

  144. [152]

    Liang S, Han L, You Y , Bai H, Pan F and Song C 2023 Phys. Rev. B 107 184427

  145. [153]

    Zhao Q, Zhang T, He B, Li Z, Zhang S, Yu G, Wang J, Liu Q and Wei J 2024 Chinese Physics B 33 058502

  146. [154]

    Bai H, Zhang Y C, Han L, Zhou Y J, Pan F and Song C 2022 Appl. Phys. Rev. 9 041316

  147. [155]

    Šmejkal L, Sinova J and Jungwirth T 2022 Phys. Rev. X 12 031042

  148. [156]

    2024 Sci

    Fedchenko O, Minár J, Akashdeep A, et al. 2024 Sci. Adv. 10 eadj4883

  149. [157]

    Lin Z, Chen D, Lu W, Liang X, Feng S, Yamagami K, Osiecki J, Leandersson M, Thiagarajan B, Liu J, Felser C and Ma J 2024 arXiv: 2402.04995 [cond- mat.mtrl-sci]

  150. [158]

    2024 Nature 626 517

    Krempaský J, Šmejkal L, D’Souza S W, et al. 2024 Nature 626 517

  151. [159]

    Lee S, Lee S, Jung S, Jung J, Kim D, Lee Y , Seok B, Kim J, Park B G, Šmejkal L, Kang C-J and Kim C 2024 Phys. Rev. Lett. 132 036702

  152. [160]

    Hajlaoui M, Wilfred D'Souza S, Šmejkal L, Kriegner D, Krizman G, Zakusylo T, Olszowska N, Caha O, Michalička J, Sánchez-Barriga J, Marmodoro A, Výborný K, Ernst A, Cinchetti M, Minar J, Jungwirth T and Springholz G 2024 Adv. Mater . 36 2314076

  153. [161]

    2024 Nature 636 348

    Amin O J, Dal Din A, Golias E, et al. 2024 Nature 636 348

  154. [162]

    Hariki A, Dal Din A, Amin O J, Yamaguchi T, Badura A, Kriegner D, Edmonds K W, Campion R P, Wadley P, Backes D, Veiga L S I, Dhesi S S, Springholz G, Šmejkal L, Výborný K, Jungwirth T and Kuneš J 2024 Phys. Rev. Lett. 132 176701

  155. [163]

    Reimers S, Odenbreit L, Smejkal L, Strocov V N, Constantinou P, Hellenes A B, Ubiergo R J, Campos W H, Bharadwaj V K, Chakraborty A, Denneulin T, Shi W, Dunin-Borkowski R E, Das S, Kläui M, Sinova J and Jourdan M 2024 Nat. Commun. 15 2116

  156. [164]

    2024 Phys

    Ding J, Jiang Z, Chen X, et al. 2024 Phys. Rev. Lett. 133 206401

  157. [165]

    2024 Adv

    Zeng M, Zhu M-Y , Zhu Y-P, et al. 2024 Adv. Sci. 11 2406529

  158. [166]

    Li C, Hu M, Li Z, Wang Y , Chen W, Balasubramanian, Thiagarajan, Leandersson M, Polley C, Kim T, Liu H, Fulga C, Vergniory M G, Janson O, Tjernberg O and Brink J v d 2024 arXiv: 2405.14777 [cond-mat.mtrl-sci]

  159. [167]

    2025 Nat

    Yang G, Li Z, Yang S, et al. 2025 Nat. Commun. 16 1442

  160. [168]

    Lu W, Feng S, Wang Y , Chen D, Lin Z, Liang X, Liu S, Feng W, Yamagami K, Chinese Physics B Liu J, Felser C, Wu Q and Ma J 2024 arXiv: 2407.13497 [cond-mat.mtrl-sci]

  161. [169]

    2024 Nat

    Reichlova H, Lopes Seeger R, González-Hernández R, et al. 2024 Nat. Commun. 15 4961

  162. [170]

    2024 arXiv: 2408.00320 [cond-mat.mtrl-sci]

    Jiang B, Hu M, Bai J, et al. 2024 arXiv: 2408.00320 [cond-mat.mtrl-sci]

  163. [171]

    2024 arXiv: 2407.19555 [cond-mat.str-el]

    Zhang F, Cheng X, Yin Z, et al. 2024 arXiv: 2407.19555 [cond-mat.str-el]

  164. [172]

    2024 Nature 626 523

    Zhu Y-P, Chen X, Liu X-R, et al. 2024 Nature 626 523

  165. [173]

    Fan Y B, Wang Q, Wang W, Wang D, Huang Q K, Wang Z X, Han X, Chen Y X, Bai L H, Yan S S and Tian Y F 2024 Acs Nano 18 26350

  166. [174]

    Li Z, Zhang Z, Chen Y , Hu S, Ji Y , Yan Y , Du J, Li Y , He L, Wang X, Wu J, Zhang R, Xu Y and Lu X 2025 Adv. Mater . 37 2416712

  167. [175]

    Wu Y , Wu T, Chen H, Cui Y , Xu H, Jiang N, Cheng Z and Wu Y 2025 Appl. Phys. Lett. 126 012401

  168. [176]

    Sekh B, Rahaman H, Maddu R, Mishra P K, Jin T and Piramanayagam S 2025 arXiv: 2501.12593 [cond-mat.mes-hall]

  169. [177]

    Bernevig B A, Hughes T L and Zhang S-C 2005 Phys. Rev. Lett. 95 066601

  170. [178]

    Tanaka T, Kontani H, Naito M, Naito T, Hirashima D S, Yamada K and Inoue J 2008 Phys. Rev. B 77 165117

  171. [179]

    Kontani H, Tanaka T, Hirashima D S, Yamada K and Inoue J 2009 Phys. Rev. Lett. 102 016601

  172. [180]

    Kim J, Go D, Tsai H, Jo D, Kondou K, Lee H-W and Otani Y 2021 Phys. Rev. B 103 L020407

  173. [181]

    Jo D, Go D, Choi G-M and Lee H-W 2024 npj Spintron. 2 19

  174. [182]

    Park S R, Kim C H, Yu J, Han J H and Kim C 2011 Phys. Rev. Lett. 107 156803

  175. [183]

    Ding S, Liang Z, Go D, Yun C, Xue M, Liu Z, Becker S, Yang W, Du H, Wang C, Yang Y , Jakob G, Kläui M, Mokrousov Y and Yang J 2022 Phys. Rev. Lett. 128 067201

  176. [184]

    Kim J, Uzuhashi J, Horio M, Senoo T, Go D, Jo D, Sumi T, Wada T, Matsuda I, Ohkubo T, Mitani S, Lee H-W and Otani Y 2023 Phys. Rev. Mater. 7 L111401

  177. [185]

    Go D and Lee H-W 2020 Phys. Rev. Res. 2 013177

  178. [186]

    Go D, Freimuth F, Hanke J-P, Xue F, Gomonay O, Lee K-J, Blügel S, Haney P M, Lee H-W and Mokrousov Y 2020 Phys. Rev. Res. 2 033401

  179. [187]

    Tazaki Y , Kageyama Y , Hayashi H, Harumoto T, Gao T, Shi J and Ando K 2020 arXiv: 2004.09165 [cond-mat.mtrl-sci]

  180. [188]

    Fukunaga R, Haku S, Hayashi H and Ando K 2023 Phys. Rev. Res. 5 023054

  181. [189]

    Liu X, Liu F and Jiang C 2024 J. Magn. Magn. Mater. 610 172585

  182. [190]

    Sala G, Wang H, Legrand W and Gambardella P 2023 Phys. Rev. Lett. 131 156703

  183. [191]

    Yang Y M, Xie Z C, Zhao Z Y , Lei N, Zhao J H and Wei D H 2024 Commun. Phys. 7 336

  184. [192]

    Moriya H, Taniguchi M, Jo D, Go D, Soya N, Hayashi H, Mokrousov Y , Lee H- W and Ando K 2024 Nano Lett. 24 6459

  185. [193]

    Li T, Liu L, Li X, Zhao X, An H and Ando K 2023 Nano Lett. 23 7174

  186. [194]

    Zheng Z C, Guo Q X, Jo D, Go D, Wang L H, Chen H C, Yin W, Wang X M, Yu G H, He W, Lee H W, Teng J and Zhu T 2020 Phys. Rev. Res. 2 013127 Chinese Physics B

  187. [195]

    Jo D, Go D and Lee H-W 2018 Phys. Rev. B 98 214405

  188. [196]

    Bhowal S and Satpathy S 2020 Phys. Rev. B 101 121112(R)

  189. [197]

    Bhowal S and Satpathy S 2020 Phys. Rev. B 102 035409

  190. [198]

    Canonico L M, Cysne T P, Molina-Sanchez A, Muniz R B and Rappoport T G 2020 Phys. Rev. B 101 161409(R)

  191. [199]

    Canonico L M, Cysne T P, Rappoport T G and Muniz R B 2020 Phys. Rev. B 101 075429

  192. [200]

    Cysne T P, Costa M, Canonico L M, Nardelli M B, Muniz R B and Rappoport T G 2021 Phys. Rev. Lett. 126 056601

  193. [201]

    Cysne T P, Bhowal S, Vignale G and Rappoport T G 2022 Phys. Rev. B 105 195421

  194. [202]

    Salemi L and Oppeneer P M 2022 Phys. Rev. Mater. 6 095001

  195. [203]

    Liu H and Culcer D 2024 Phys. Rev. Lett. 132 186302

  196. [204]

    Sahu P, Bidika J K, Biswal B, Satpathy S and Nanda B R K 2024 Phys. Rev. B 110 054403

  197. [205]

    Fukunaga R, Haku S, Gao T, Hayashi H and Ando K 2024 Phys. Rev. B 109 144412

  198. [206]

    23 10274

    Xie H, Zhang N, Ma Y , Chen X, Ke L and Wu Y 2023 Nano Lett. 23 10274

  199. [207]

    Lyalin I, Alikhah S, Berritta M, Oppeneer P M and Kawakami R K 2023 Phys. Rev. Lett. 131 156702

  200. [208]

    Zheng Z, Zeng T, Zhao T, Shi S, Ren L, Zhang T, Jia L, Gu Y , Xiao R, Zhou H, Zhang Q, Lu J, Wang G, Zhao C, Li H, Tay B K and Chen J 2024 Nat. Commun. 15 745

  201. [209]

    Baek I and Lee H-W 2021 Phys. Rev. B 104 245204

  202. [210]

    Gao T, Rüßmann P, Wang Q, Fukunaga R, Hayashi H, Go D, Harumoto T, Tu R, Zhang S, Zhang L, Mokrousov Y , Shi J and Ando K 2024 Nat. Phys. 20 1896

  203. [211]

    Tokatly I V 2010 Phys. Rev. B 82 161404

  204. [212]

    Bhowal S and Vignale G 2021 Phys. Rev. B 103 195309

  205. [213]

    Costa M, Focassio B, Canonico L M, Cysne T P, Schleder G R, Muniz R B, Fazzio A and Rappoport T G 2023 Phys. Rev. Lett. 130 116204

  206. [214]

    Chen Z, Li R, Bai Y , Mao N, Zeer M, Go D, Dai Y , Huang B, Mokrousov Y and Niu C 2024 Nano Lett. 24 4826

  207. [215]

    Zhang D, Wei H, Duan J, Chen J, Yue D, Yang Y , Gou J, Yan J, Zhai K and Wang P 2024 arXiv: 2412.04872 [cond-mat.mtrl-sci]

  208. [216]

    23 11323

    Huang Q, Liu S, Yang T, Xie R, Cai L, Cao Q, Lü W, Bai L, Tian Y and Yan S 2023 Nano Lett. 23 11323

  209. [217]

    Electron

    Bi L Z, Ke J, Bai H, Li G, Zhu Z, Hu C, Cheng Y , Wang P, Jiang W, Zhang Y and Cai J W 2023 Adv. Electron. Mater. 10 2300627

  210. [218]

    Chen T-Y , Hsiao Y-C, Liao W-B and Pai C-F 2022 Phys. Rev. Appl. 17 064005

  211. [219]

    An H, Kageyama Y , Kanno Y , Enishi N and Ando K 2016 Nat. Commun. 7 13069

  212. [220]

    Gao T, Qaiumzadeh A, An H, Musha A, Kageyama Y , Shi J and Ando K 2018 Phys. Rev. Lett. 121 017202

  213. [221]

    Chinese Physics B Adv

    Kageyama Y , Tazaki Y , An H, Harumoto T, Gao T, Shi J and Ando K 2019 Sci. Chinese Physics B Adv. 5 eaax4278

  214. [222]

    Yoda T, Yokoyama T and Murakami S 2018 Nano Lett. 18 916

  215. [223]

    Salemi L, Berritta M, Nandy A K and Oppeneer P M 2019 Nat. Commun. 10 5381

  216. [224]

    24 10251

    Ding S, Wang H, Legrand W, Noël P and Gambardella P 2024 Nano Lett. 24 10251

  217. [225]

    Xiao Z-Y , Li Y-J, Zhang W, Han Y-J, Li D, Chen Q, Zeng Z-M, Quan Z-Y and Xu X-H 2022 Appl. Phys. Lett. 121 072404

  218. [226]

    Chumak A V , Vasyuchka V I, Serga A A and Hillebrands B 2015 Nat. Phys. 11 453

  219. [227]

    Gurevich A G and Melkov G A 2020 Magnetization oscillations and waves (London: CRC press)

  220. [228]

    Uchida K, Takahashi S, Harii K, Ieda J, Koshibae W, Ando K, Maekawa S and Saitoh E 2008 Nature 455 778

  221. [229]

    Bauer G E W, Saitoh E and van Wees B J 2012 Nat. Mater. 11 391

  222. [230]

    Siegrist F, Gessner J A, Ossiander M, Denker C, Chang Y-P, Schröder M C, Guggenmos A, Cui Y , Walowski J, Martens U, Dewhurst J K, Kleineberg U, Münzenberg M, Sharma S and Schultze M 2019 Nature 571 240

  223. [231]

    Li J, Wilson C B, Cheng R, Lohmann M, Kavand M, Yuan W, Aldosary M, Agladze N, Wei P, Sherwin M S and Shi J 2020 Nature 578 70

  224. [232]

    Parsonnet E, Caretta L, Nagarajan V , Zhang H, Taghinejad H, Behera P, Huang X, Kavle P, Fernandez A, Nikonov D, Li H, Young I, Analytis J and Ramesh R 2022 Phys. Rev. Lett. 129 087601

  225. [233]

    2024 Nat

    Chai Y , Liang Y , Xiao C, et al. 2024 Nat. Commun. 15 5975

  226. [234]

    Han J, Zhang P, Hou J T, Siddiqui S A and Liu L 2019 Science 366 1121

  227. [235]

    Han J, Cheng R, Liu L, Ohno H and Fukami S 2023 Nat. Mater. 22 684

  228. [236]

    Nanotechnol

    Fan Y , Gross M J, Fakhrul T, Finley J, Hou J T, Ngo S, Liu L and Ross C A 2023 Nat. Nanotechnol. 18 1000

  229. [237]

    Zhu L, Zhu L and Buhrman R A 2021 Phys. Rev. Lett. 126 107204

  230. [238]

    Zhu D, Zhang T, Fu X, Hao R, Hamzić A, Yang H, Zhang X, Zhang H, Du A, Xiong D, Shi K, Yan S, Zhang S, Fert A and Zhao W 2022 Phys. Rev. Lett. 128 217702

  231. [239]

    Moriyama T, Takei S, Nagata M, Yoshimura Y , Matsuzaki N, Terashima T, Tserkovnyak Y and Ono T 2015 Appl. Phys. Lett. 106 162406

  232. [240]

    Zheng D, Lan J, Fang B, Li Y , Liu C, Ledesma‐Martin J O, Wen Y , Li P, Zhang C, Ma Y , Qiu Z, Liu K, Manchon A and Zhang X 2022 Adv. Mater . 34 2203038

  233. [241]

    Zheng D, Tang M, Xu J, Liu C, Li Y , Chen A, Algaidi H, Alsayafi F, Chen M, Ma Y , Zhang S, Zhang L, Li P and Zhang X 2024 Appl. Phys. Lett. 124 102406

  234. [242]

    Guo C Y , Wan C H, Zhao M K, Fang C, Ma T Y , Wang X, Yan Z R, He W Q, Xing Y W, Feng J F and Han X F 2021 Phys. Rev. B 104 094412

  235. [243]

    Wang H, Finley J, Zhang P, Han J, Hou J T and Liu L 2019 Phys. Rev. Appl. 11 044070

  236. [244]

    Shi G, Wang F, Tan H R, Zhao S, Liu Y , Yang D, Lee K, Pu Y , Yang S, Soumyanarayanan A and Yang H 2023 Phys. Rev. Appl. 19 034039 Chinese Physics B

  237. [245]

    Zhao P, Shi G, Lu W, Yang L, Tan H R, Guo K, Lai J-M, Yu Z, Soumyanarayanan A, Yuan Z, Wang F, Xu X and Yang H 2025 arXiv: 2501.15762 [cond-mat.mtrl-sci]

  238. [246]

    Nanotechnol

    Wang F, Shi G, Yang D, Tan H R, Zhang C, Lei J, Pu Y , Yang S, Soumyanarayanan A, Elyasi M and Yang H 2024 Nat. Nanotechnol. 19 1478

  239. [247]

    Zhao T, Scholl A, Zavaliche F, Lee K, Barry M, Doran A, Cruz M P, Chu Y H, Ederer C, Spaldin N A, Das R R, Kim D M, Baek S H, Eom C B and Ramesh R 2006 Nat. Mater. 5 823

  240. [248]

    Chu Y-H, Martin L W, Holcomb M B, Gajek M, Han S-J, He Q, Balke N, Yang C-H, Lee D, Hu W, Zhan Q, Yang P-L, Fraile-Rodríguez A, Scholl A, Wang S X and Ramesh R 2008 Nat. Mater. 7 478

  241. [249]

    Lee J-E, Wang A, Chen S, Kwon M, Hwang J, Cho M, Son K-H, Han D-S, Choi J W, Kim Y D, Mo S-K, Petrovic C, Hwang C, Park S Y , Jang C and Ryu H 2024 Nat. Commun. 15 3971

  242. [250]

    Chakraborty A, González Hernández R, Šmejkal L and Sinova J 2024 Phys. Rev. B 109 144421

  243. [251]

    Belashchenko K D 2025 Phys. Rev. Lett. 134 086701

  244. [252]

    Smolyanyuk A, Mazin I I, Garcia-Gassull L and Valentí R 2024 Phys. Rev. B 109 134424

  245. [253]

    Keßler P, Garcia-Gassull L, Suter A, Prokscha T, Salman Z, Khalyavin D, Manuel P, Orlandi F, Mazin I I, Valentí R and Moser S 2024 npj Spintron. 2 50

  246. [254]

    Hiraishi M, Okabe H, Koda A, Kadono R, Muroi T, Hirai D and Hiroi Z 2024 Phys. Rev. Lett. 132 166702

  247. [255]

    2024 Phys

    Liu J, Zhan J, Li T, et al. 2024 Phys. Rev. Lett. 133 176401

  248. [256]

    Gyo Jeong S, Choi I H, Nair S, Buiarelli L, Pourbahari B, Oh J Y , Bassim N, Hirai D, Seo A, Choi W S, Fernandes R M, Birol T, Zhao L, Lee J S and Jalan B 2024 arXiv: 2405.05838 [cond-mat.mtrl-sci]

  249. [257]

    Weber M, Wust S, Haag L, Akashdeep A, Leckron K, Schmitt C, Ramos R, Kikkawa T, Saitoh E, Kläui M, Šmejkal L, Sinova J, Aeschlimann M, Jakob G, Stadtmüller B and Schneider H C 2024 arXiv: 2408.05187 [cond-mat.mtrl-sci]

  250. [258]

    Beaulieu S, Schusser J, Dong S, Schüler M, Pincelli T, Dendzik M, Maklar J, Neef A, Ebert H, Hricovini K, Wolf M, Braun J, Rettig L, Minár J and Ernstorfer R 2020 Phys. Rev. Lett. 125 216404

  251. [259]

    Beaulieu S, Schüler M, Schusser J, Dong S, Pincelli T, Maklar J, Neef A, Reinert F, Wolf M, Rettig L, Minár J and Ernstorfer R 2021 npj Quantum Mater. 6 93

  252. [260]

    Patton M, Go D, Pharis D A, Huang X, Gurung G, Tsymbal E Y , Ralph D C, Rzchowski M S, Mokrousov Y and Eom C-B 2024 arXiv: 2410.02996 [cond- mat.mtrl-sci]

  253. [261]

    Liu Q and Zhu L 2025 arXiv: 2501.10260 [cond-mat.mtrl-sci]

  254. [262]

    Rang M and Kelly P J 2024 Phys. Rev. B 109 214427

  255. [263]

    Song Y , Tian J, Zheng F, Dong J, Zhu M and Zhang J 2025 arXiv: 2503.00910 [cond-mat.mtrl-sci]

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Reviewed August 15, 2026 · model on record in the stance chip above.