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Comprehensive technology study of radiation hard LGADs
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abstract
Towards radiation tolerant sensors for pico-second timing, several dopants are explored. Using a common mask, CNM produced LGADs with boron, boron + carbon and gallium implanted gain layers are studied under neutron and proton irradiation. With fluences ranging from $10^{14}$ to $6\times 10^{15} n_{eq}/cm^{2}$ on both particle species, reported results focus on acceptor removal and gain reduction via electrical characterization. Timing performance, charge collection, gain and relative efficiency are treated through charged particle measurements, including signal analysis and noise characterization. An accent is placed on stability, via dark rate and operating voltage studies while, radiation related gain reduction mechanisms are examined comparing gain estimations through different approaches.
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Cited by 1 Pith paper
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Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons
First IV/CV measurements of carbon-infused LGAD sensors after non-uniform 24 GeV/c proton irradiation up to 1e16 p/cm2 show a common operating voltage may remain viable despite a roughly tenfold dose gradient.
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