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Impact of ALD-Deposited Ultrathin Nitride Layers on Carrier Lifetimes and Photoluminescence Efficiency in CdTe/MgCdTe Double Heterostructures

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arxiv 2408.10696 v1 pith:CBYSMN5Z submitted 2024-08-20 cond-mat.mtrl-sci physics.app-ph

Haris Naeem Abbasi , Xin Qi , Zheng Ju , Zhenqiang Ma , Yong-Hang Zhang This is my paper
classification cond-mat.mtrl-sciphysics.app-ph
keywords cdtepassivationphotoluminescencecarrierdoubleeffectivenessefficiencyheterostructures
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This work evaluates the passivation effectiveness of ultrathin nitride layers (SiNx, AlN, TiN) deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for solar cell applications. Time-resolved photoluminescence and photoluminescence measurements revealed enhanced carrier lifetimes and reduced surface recombination, indicating improved passivation effectiveness. These results underscore the potential of SiNx as a promising passivation material to improve the efficiency of CdTe solar cells.

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