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REVIEW 1 major objections 6 minor 81 references

Alloy engineering of excitonic properties in TMD monolayers

T0 review · 1 major / 6 minor · reviewed 2026-08-05 · deepseek-v4-flash

Pith's one-line read Chalcogen alloying in monolayer MoS2xSe2(1-x) continuously tunes the optical gap, the spin-orbit exciton splitting, the phonon energy, and the valley polarization, attributing the polarization trend to alloy-modified bright-dark exciton mix

desk verdict Solid full-composition dataset with a fresh phonon trend; the polarization mechanism is plausible but rests on single-configuration DFT, which the authors openly acknowledge. read the letter →

arxiv 2608.03347 v1 pith:CFGNPVYJ submitted 2026-08-04 cond-mat.mtrl-sci

classification cond-mat.mtrl-sci PACS 78.67.-n71.35.-y71.70.Ej
keywords excitonstransitionmetaldichalcogenidesalloymonolayersopticalspectroscopyphononspolarizationspin-valleydensityfunctionaltheory
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper reports that the full alloy series MoS2xSe2(1-x) provides a way to continuously tune the optical gap, the spin-orbit-related exciton splitting, the average phonon energy, and the exciton circular polarization of a monolayer semiconductor by adjusting the sulfur-to-selenium ratio. It claims the optical gap shifts by about 0.35 eV, the B-A exciton splitting falls from roughly 200 to 150 meV, the average phonon energy rises from about 17 to 22.5 meV according to a reduced-mass scaling law with a single fitted constant, and the circular polarization increases from near zero to about 15% at 78 K. The polarization trend is attributed to alloy-induced changes in the conduction-band spin splitting that modify bright-dark exciton mixing and the efficiency of valley depolarization. A sympathetic reader would care because this makes alloying a synthesis-compatible dial for electronic, vibrational, and spin-valley properties in one two-dimensional material system.

What carries the argument

The central object is the alloy composition axis x in MoS2xSe2(1-x), the sulfur fraction, used as a continuous tuning parameter. The argument is carried by three quantitative mechanisms: a Vegard-like linear interpolation of the A and B exciton energies with small bowing parameters, so the B-A splitting tracks the spin-orbit splitting of the band edges; the reduced-mass scaling of the average phonon energy, <hbar omega>(x) = A / sqrt(mu_eff(x)), where mu_eff is the Mo-chalcogen reduced mass and A is a single fitted constant; and the bright-dark exciton splitting Delta_bd = E_bright - E_dark, which controls Rashba-assisted valley depolarization and is linked through DFT calculations to the al

What would settle it

Measure the circular polarization of the A exciton at fixed detuning and temperature across several independently prepared monolayers of the same nominal alloy composition; if sample-to-sample spread is comparable to the reported monotonic increase from about 0% to 15%, the proposed composition-polarization link is not supported. Alternatively, compute the conduction-band spin splitting averaged over many random alloy configurations: the mechanism fails if the averaged splitting does not decrease monotonically with sulfur content.

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Extended reading notes

Core claim

The central claim is that chalcogen alloying in monolayer MoS2xSe2(1-x) is a powerful platform for tuning the electronic, vibrational, and spin-valley properties of two-dimensional semiconductors. Across compositions from MoSe2 (x=0) to MoS2 (x=1), the A-exciton photoluminescence shifts continuously from 1.63 to 1.93 eV at 8 K; the B-A exciton splitting decreases monotonically from about 200 to about 150 meV, in agreement with DFT-calculated spin-orbit splittings; the average phonon energy extracted from temperature-dependent PL increases from about 17 to 22.5 meV and follows a reduced-mass scaling with one fitted prefactor; and at fixed 93 meV detuning and 78 K, the circular polarization of

Load-bearing premise

The load-bearing premise is that a single calculated atomic arrangement per alloy composition captures how real alloy disorder changes the conduction-band spin splitting; the paper itself notes that intermediate splittings depend on which Se/S arrangement is used.

Editorial extensions

If this is right

  • The same hBN-encapsulated monolayer platform can provide any optical gap between about 1.63 and 1.93 eV by choosing the sulfur fraction, without needing external strain or electrostatic doping.
  • The linear composition dependence of the B-A splitting means the spin-orbit energy scale can be dialed in over a roughly 50 meV range across the alloy series.
  • Because a single reduced-mass prefactor describes the average phonon energy for all five compositions, the model predicts the phonon scale for any intermediate x and offers a fast composition diagnostic from temperature-dependent PL.
  • The monotonic rise of circular polarization from near zero to about 15% at 78 K under fixed detuning implies that valley initialization becomes more robust as sulfur content increases, making sulfur-rich alloys preferable for applications requiring spin-valley contrast.
  • The near-zero bowing parameters imply the alloy behaves nearly as a virtual crystal for exciton energies despite the mixed chalcogen sublattice, so alloying introduces limited electronic perturbation beyond the intended band-edge shifts.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Editorial extension: if the reduced-mass phonon scaling is as clean as reported, the same one-parameter fit should predict the average phonon energy in related alloy series with the same MoX2 skeleton, such as MoS2xTe2(1-x) or MoSe2xTe2(1-x), unless the effective force constant changes enough to break the assumed constancy.
  • Editorial extension: the proposed bright-dark mixing mechanism implies a testable temperature dependence: the polarization gain from sulfur alloying should shrink at higher temperatures if depolarization is thermally assisted, whereas a purely disorder-driven intervalley scattering channel would show a different trend.
  • Editorial extension: because the DFT trend was computed for one special quasi-random structure per composition, averaging band structures over many random configurations would sharpen the claim; if the averaged conduction-band splitting does not decrease monotonically with sulfur content, the attribution of the polarization rise to this splitting would be weakened.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

1 major / 6 minor

Summary. The manuscript reports an optical-spectroscopy and DFT study of monolayer MoS2xSe2(1-x) alloys at x = 0, 0.3, 0.52, 0.7, and 1, using hBN-encapsulated samples. The experimental results show a continuous optical-gap blueshift of about 0.35 eV with small bowing parameters, a monotonic decrease of the B-A exciton splitting from about 200 to 150 meV, an increase of the average phonon energy from about 17 to 22.5 meV described by a one-parameter reduced-mass scaling model, and an increase in circular polarization from near zero in MoSe2 to about 15% in MoS2 under fixed detuning at 78 K. DFT (PBE+SOC with SQS supercells for x = 0.3 and 0.7) is used to support the B-A splitting trend and to attribute the polarization increase to composition-dependent conduction-band spin splitting that changes the bright-dark exciton splitting and Rashba-assisted valley depolarization.

Significance. If the trends hold, the paper offers a valuable unified dataset for alloy engineering of TMD monolayers, combining excitonic, vibrational, and polarization properties in a single, well-characterized sample set. The strengths include the fixed-detuning polarization protocol, transparent fits with quoted parameters, the use of hBN encapsulation, and the authors' candid caveats about single-configuration DFT. The empirical trends—the gap shift, B-A splitting, and phonon scaling—are convincing and reproducible from the presented figures. The polarization mechanism is plausible but less conclusive, and it is the main limitation of the manuscript.

major comments (1)
  1. [Results and Discussion, Eq. (2), Figs. 2(d) and 4(b), Methods] The DFT bridge for the polarization mechanism is single-configuration SQS at x = 0.3 and x = 0.7, with no calculation at x = 0.52. The authors concede that intermediate splittings are sensitive to the Se/S arrangement; configurational averaging could therefore change the conduction-band splitting trend used to link composition to bright-dark splitting Δbd and polarization. In addition, Δbd is not computed directly; the argument assumes composition-independent exchange (~20 meV) and small binding-energy differences. The polarization data have no error bars and one sample per composition. I recommend either adding configurational averaging (and ideally direct Δbd estimates) or explicitly presenting the mechanism as a hypothesis rather than a conclusion. This is load-bearing because the spin-valley tuning claim rests on it.
minor comments (6)
  1. [Fig. 2(c) and main text] The caption states the A and B exciton data were extracted from PL spectra at 78 K, while the main text says they were extracted from PL spectra at 8 K (Fig. S2). Please reconcile.
  2. [Fig. 3(f)] The extracted average phonon energies are shown without error bars. Reporting fit uncertainties would let the reader judge the quality of the reduced-mass scaling and the quoted prefactor A = (111.8 ± 0.6) meV·sqrt(amu).
  3. [Methods, Calculations] The text specifies SQS supercells for x = 0.3 and x = 0.7 only. The figures and text should make clear that no DFT point is available for x = 0.52, and that the phrase 'full composition range' applies strictly to the experimental data.
  4. [Eq. (3) and phonon discussion] Equation (3) has three fitted parameters (Eg(0), S, and <ħω>), while the 'single-parameter' language later refers to the scaling model A/sqrt(μ). Please clarify this distinction to avoid confusion.
  5. [Abstract and Conclusions] The statement that the B-A splitting is 'in agreement with density functional theory calculations' is stronger than the explicitly qualitative comparison made in the text. Add 'qualitatively' in the abstract and conclusions, or provide quantitative uncertainty estimates.
  6. [Methods, Sample fabrication] The annealing temperature '1500C' should read '150 °C'.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: phonon scaling is a one-parameter fit, the B–A and polarization trends rely on independent DFT and published endpoint data, and self-citations are supporting rather than load-bearing.

full rationale

None of the paper's load-bearing derivations reduces to its own inputs by construction. The optical-gap shift and B–A exciton splitting are direct measurements compared with independently computed DFT splittings; Eq. (2) merely decomposes the measured B–A separation and the DFT values are calculated, not fitted to the data. The phonon reduced-mass scaling in Fig. 3(f) is explicitly a single-parameter fit (A = 111.8±0.6 meV√amu) to the ⟨ħω⟩ values extracted from temperature-dependent PL, and the paper presents it as a description rather than an independent prediction. The polarization mechanism is an interpretation anchored to published endpoint values for MoSe2 (Δbd ≈ -1.5 meV, Ref. [65]) and MoS2 (Δbd ≈ +14 meV, Ref. [66]) and a prior first-principles estimate of the exchange contribution (Ref. [67]), with new DFT calculations showing the conduction-band spin-splitting trend; this is a testable hypothesis, not a tautology. The paper itself flags the main weakness: 'the calculated splittings for the intermediate alloy compositions are sensitive to the specific Se/S atomic arrangement considered in the simulations' and 'these calculations do not directly provide Δbd'. Such caveats lower confidence in the mechanistic claim but do not constitute circularity. Several cited works include overlapping authors, but they are published, externally falsifiable results rather than parameters fitted in the present paper, so they do not create a circular chain. Verdict: no significant circularity.

Assumptions & free parameters 7 free parameters · 7 assumptions · 0 invented entities

The central empirical claims rest on standard optical spectroscopy, but the interpretation relies on DFT at the PBE level, a single SQS configuration per alloy, and literature values for bright-dark splittings. The phonon trend uses one fitted prefactor. No new entities are introduced.

free parameters (7)
  • bowing parameter b_A = -0.064 ± 0.045 eV
    Fitted to composition dependence of A-exciton energy via Eq. (1); used to claim near-linear Vegard behavior.
  • bowing parameter b_B = -0.069 ± 0.044 eV
    Fitted to B-exciton energies via Eq. (1); used to claim near-zero bowing.
  • exciton-phonon coupling S = not reported
    Fitted per sample in Eq. (3) to extract average phonon energies from temperature-dependent PL.
  • average phonon energy <hbar omega> = 17 to 22.5 meV across x
    Extracted from O'Donnell-Chen fits to Eg(T); the central quantity used to test reduced-mass scaling.
  • prefactor A in phonon scaling model = 111.8 ± 0.6 meV sqrt(amu)
    Single-parameter fit of <hbar omega>(x) = A/sqrt(mu_eff(x)) to the extracted phonon energies.
  • zero-temperature bandgap E_g(0) = not reported
    Fit parameter in Eq. (3) for each sample.
  • detuning 93 meV = 93 meV
    Chosen by hand to fix excitation conditions across samples, not a derived quantity.
assumptions (7)
  • domain assumption PBE-GGA DFT with DFT-D3 and PAW accurately captures relative band-edge and spin-orbit trends in TMD alloys
    Used throughout Methods 'Calculations' to compute splittings and conduction-band structure; PBE is known to underestimate bandgaps but spin-orbit trends are generally captured.
  • ad hoc to paper Special quasi-random structures with a single configuration per composition represent the alloy disorder
    The authors use one SQS per composition (x=0.3,0.7) and explicitly note sensitivity to Se/S arrangement, so representativeness is assumed for the DFT trends.
  • domain assumption Vegard's law linear interpolation applies to the exciton energies
    Eq. (1) assumes linear composition dependence with a small bowing term; the small bowing is a result, not an input.
  • domain assumption The O'Donnell-Chen empirical model (Eq. 3) correctly separates phonon energy from coupling strength in the temperature dependence
    Used to extract <hbar omega> from PL peak shifts; the model's ability to uniquely determine S and <hbar omega> is assumed.
  • domain assumption The Mo-chalcogen effective force constant k is approximately composition-independent across the alloy series
    Reduced-mass model <hbar omega> = A/sqrt(mu_eff) assumes constant k, cited to ref [61].
  • domain assumption Bright-dark exciton splitting across the alloy series is governed primarily by the conduction-band spin-orbit splitting, with exchange contribution roughly constant (~20 meV)
    Used to connect DFT conduction-band trends to Delta_bd and the polarization mechanism, based on ref [67].
  • domain assumption The A and B exciton binding energies are similar across compositions
    Used to interpret E_B - E_A as approximately Delta_v + Delta_c, based on similar reduced masses from ref [47].

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Cite this review

Pith. "Pith review of Alloy engineering of excitonic properties in TMD monolayers." pith.science (2026). https://pith.science/paper/CFGNPVYJ

@misc{pith2026260803347,
  author       = {Pith},
  title        = {Pith review of: Alloy engineering of excitonic properties in TMD monolayers},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/CFGNPVYJ}},
  note         = {Machine review of arXiv:2608.03347}
}
abstract

We investigate monolayer MoS$_{2x}$Se$_{2(1-x)}$ alloys across the full composition range using optical spectroscopy. We demonstrate continuous tuning of the optical gap over $\sim$0.35 eV, accompanied by a systematic reduction of the B--A exciton splitting, in agreement with density functional theory calculations. Temperature-dependent measurements reveal a progressive increase of the average phonon energy from Se-rich to S-rich alloys that follows a simple reduced-mass scaling model. Polarization-resolved spectroscopy further shows a monotonic increase of the circular polarization from nearly zero in MoSe$_2$ to $\sim$15\% in MoS$_2$ at 78 K. The observed evolution of the polarization is attributed to alloy-induced modifications of the electronic structure that modify bright--dark exciton mixing and the associated valley depolarization. These findings establish alloy engineering as an effective strategy for controlling excitonic properties in TMD monolayers.

Figures

Figures reproduced from arXiv: 2608.03347 by the authors.

Figure 1
Figure 1. FIG. 1. (a) Optical microscope image of encapsulated MoSe [PITH_FULL_IMAGE:figures/full_fig_p003_1.png] view at source ↗
Figure 2
Figure 2. FIG. 2. (a) Schematic illustration of the evolution of the spin–orbit splitting of the valence bands with alloy composition, [PITH_FULL_IMAGE:figures/full_fig_p004_2.png] view at source ↗
Figure 3
Figure 3. FIG. 3. (a) Temperature dependence of A-exciton transition energy for (a) MoSe [PITH_FULL_IMAGE:figures/full_fig_p005_3.png] view at source ↗
Figures from the paper (1 more)
Figure 4
Figure 4. Figure 4: FIG. 4. (a) Experimentally measured exciton circular polarization as a function of alloy composition, showing a monotonic [PITH_FULL_IMAGE:figures/full_fig_p006_4.png]

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Works this paper leans on

81 extracted references · 80 canonical work pages

  1. [1]

    Emerging photolu- minescence in monolayer MoS2.Nano letters2010,10, 1271–1275

    Splendiani, A.; Sun, L.; Zhang, Y.; Li, T.; Kim, J.; Chim, C.-Y.; Galli, G.; Wang, F. Emerging photolu- minescence in monolayer MoS2.Nano letters2010,10, 1271–1275

  2. [2]

    F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T

    Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS 2: a new direct-gap semiconductor. Physical Review Letters2010,105, 136805

  3. [3]

    Zeng, H.; Liu, G.-B.; Dai, J.; Yan, Y.; Zhu, B.; He, R.; Xie, L.; Xu, S.; Chen, X.; Yao, W.; others Optical signa- ture of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides.Scientific Re- ports2013,3, 1608

  4. [4]

    I. C. G. and A. S. gratefully acknowledge the computational resources provided by the CALMIP ini- tiative (project P0812) and CINES, IDRIS, and TGCC, which were granted by GENCI through allocation 2025- A0180906649. K. W. and T. T. acknowledge support from the CREST (JPMJCR24A5), JST and World Pre- mier International Research Center Initiative (WPI), MEXT...

  5. [5]

    F.; He, K.; Shan, J.; Heinz, T

    Mak, K. F.; He, K.; Shan, J.; Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nature Nanotechnology2012,7, 494–498

  6. [6]

    Physical Review B2023,107, 245407

    Ren, L.; Robert, C.; Dery, H.; He, M.; Li, P.; Van Tuan, D.; Renucci, P.; Lagarde, D.; Taniguchi, T.; Watanabe, K.; others Measurement of the conduction band spin-orbit splitting in WSe 2 and WS 2 monolayers. Physical Review B2023,107, 245407

  7. [7]

    2D materi- als for optical modulation: challenges and opportunities

    Yu, S.; Wu, X.; Wang, Y.; Guo, X.; Tong, L. 2D materi- als for optical modulation: challenges and opportunities. Advanced Materials2017,29, 1606128

  8. [8]

    Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides.Chemical Society Reviews2015,44, 2643–2663

    Liu, G.-B.; Xiao, D.; Yao, Y.; Xu, X.; Yao, W. Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides.Chemical Society Reviews2015,44, 2643–2663

Show all 81 references
  1. [9]

    Coupled spin and valley physics in monolayers of MoS 2 and other group-VI dichalcogenides.Physical Review Letters2012, 108, 196802

    Xiao, D.; Liu, G.-B.; Feng, W.; Xu, X.; Yao, W. Coupled spin and valley physics in monolayers of MoS 2 and other group-VI dichalcogenides.Physical Review Letters2012, 108, 196802

  2. [10]

    H.; Kalantar-Zadeh, K.; Kis, A.; Cole- man, J

    Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Cole- man, J. N.; Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.Na- ture Nanotechnology2012,7, 699–712

  3. [11]

    R.; Yu, H.; Clark, G.; Rivera, P.; Ross, J

    Schaibley, J. R.; Yu, H.; Clark, G.; Rivera, P.; Ross, J. S.; Seyler, K. L.; Yao, W.; Xu, X. Valleytronics in 2D mate- rials.Nature Reviews Materials2016,1, 16055

  4. [12]

    Seyler, K. L. et al. Valleytronics in 2D Materials Roadmap. 2026

  5. [13]

    Tunable and low-noise WSe 2 quantum emitters for quantum photonics.PRX Quantum2025, 6, 040339

    Paralikis, A.; Wyborski, P.; Metuh, P.; Gregersen, N.; Munkhbat, B. Tunable and low-noise WSe 2 quantum emitters for quantum photonics.PRX Quantum2025, 6, 040339

  6. [14]

    Kourmoulakis, G.; Michail, A.; Paradisanos, I.; Marie, X.; Glazov, M.; Jorissen, B.; Covaci, L.; Stratakis, E.; Papagelis, K.; Parthenios, J.; others Bi- axial strain tuning of exciton energy and polarization in monolayer WS2.Applied Physics Letters2023,123

  7. [15]

    A.; Lathiotakis, N

    Michail, A.; Anestopoulos, D.; Delikoukos, N.; Gram- matikopoulos, S.; Tsirkas, S. A.; Lathiotakis, N. N.; Frank, O.; Filintoglou, K.; Parthenios, J.; Papagelis, K. Tuning the photoluminescence and raman response of single-layer WS2 crystals using biaxial strain.The Jour- nal ...

  8. [16]

    R.; Wang, G.; Liu, B

    Zhu, C. R.; Wang, G.; Liu, B. L.; Marie, X.; Qiao, X. F.; Zhang, X.; Wu, X. X.; Fan, H.; Tan, P. H.; Amand, T.; Urbaszek, B. Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2.Physical Re- view B2013,88, 121301. 9

  9. [17]

    Impact of strain on the optical fingerprint of mono- layer transition-metal dichalcogenides.Physical Review B2017,96, 045425

    Feierabend, M.; Morlet, A.; Bergh¨ auser, G.; Malic, E. Impact of strain on the optical fingerprint of mono- layer transition-metal dichalcogenides.Physical Review B2017,96, 045425

  10. [18]

    Maniadaki,A.E.; Kopidakis,G.; Remediakis,I.N.Strain engineering of electronic properties of transition metal dichalcogenide monolayers.Solid State Communications 2016,227, 33–39

  11. [19]

    Katsipoulaki, E.; Vailakis, G.; Demeridou, I.; Kar- faridis, D.; Patsalas, P.; Watanabe, K.; Taniguchi, T.; Paradisanos, I.; Kopidakis, G.; Kioseoglou, G.; others Electron density control in WSe2 monolayers via pho- tochlorination.2D Materials2023,10, 045008

  12. [20]

    M.; Stratakis, E.; others Spin-Valley Polar- izationControlinWSe2MonolayersusingPhotochemical Doping.Advanced Optical Materials2025,13, e00575

    Katsipoulaki, E.; Mourzidis, K.; Jindal, V.; Lagarde, D.; Taniguchi, T.; Watanabe, K.; Kopidakis, G.; Marie, X.; Glazov, M. M.; Stratakis, E.; others Spin-Valley Polar- izationControlinWSe2MonolayersusingPhotochemical Doping.Advanced Optical Materials2025,13, e00575

  13. [21]

    Functionalization of monolayer MoS2 by substitutional doping: a first- principlesstudy.Physics Letters A2013,377, 1362–1367

    Yue, Q.; Chang, S.; Qin, S.; Li, J. Functionalization of monolayer MoS2 by substitutional doping: a first- principlesstudy.Physics Letters A2013,377, 1362–1367

  14. [22]

    M.; Komsa, H.-P.; Coy Diaz, H.; Ma, Y.; Krasheninnikov, A

    Coelho, P. M.; Komsa, H.-P.; Coy Diaz, H.; Ma, Y.; Krasheninnikov, A. V.; Batzill, M. Post-synthesis modi- fications of two-dimensional MoSe2 or MoTe2 by incor- poration of excess metal atoms into the crystal structure. ACS Nano2018,12, 3975–3984

  15. [23]

    Progress on electronic and optoelectronic devices of 2D layered semiconducting materials.Small2017,13, 1604298

    Wang, F.; Wang, Z.; Jiang, C.; Yin, L.; Cheng, R.; Zhan, X.; Xu, K.; Wang, F.; Zhang, Y.; He, J. Progress on electronic and optoelectronic devices of 2D layered semiconducting materials.Small2017,13, 1604298

  16. [24]

    Yang,M.; Ren,L.; Robert,C.; VanTuan,D.; Lombez,L.; Urbaszek, B.; Marie, X.; Dery, H. Relaxation and dark- ening of excitonic complexes in electrostatically doped monolayer WSe 2: Roles of exciton-electron and trion- electron interactions.Physical Review B2022,105, 085302

  17. [25]

    Candela-class high- brightness InGaN/AlGaN double-heterostructure blue- light-emitting diodes.Applied Physics Letters1994,64, 1687–1689

    Nakamura, S.; Mukai, T.; Senoh, M. Candela-class high- brightness InGaN/AlGaN double-heterostructure blue- light-emitting diodes.Applied Physics Letters1994,64, 1687–1689

  18. [26]

    High-power laser diodes based on InGaAsP alloys.Nature1994,369, 631–633

    Razeghi, M. High-power laser diodes based on InGaAsP alloys.Nature1994,369, 631–633

  19. [27]

    InGaN micro-LED array enabled advanced underwater wirelessopticalcommunicationandunderwatercharging

    Lin, R.; Liu, X.; Zhou, G.; Qian, Z.; Cui, X.; Tian, P. InGaN micro-LED array enabled advanced underwater wirelessopticalcommunicationandunderwatercharging. Advanced Optical Materials2021,9, 2002211

  20. [28]

    HgCdTe infrared detector material: history, status and outlook.Reports on Progress in Physics2005, 68, 2267–2336

    Rogalski, A. HgCdTe infrared detector material: history, status and outlook.Reports on Progress in Physics2005, 68, 2267–2336

  21. [29]

    M.; Dijkstra, A.; Suckert, J

    Fadaly, E. M.; Dijkstra, A.; Suckert, J. R.; Ziss, D.; Van Tilburg, M. A.; Mao, C.; Ren, Y.; Van Lange, V. T.; Korzun, K.; K¨ olling, S.; others Direct-bandgap emission from hexagonal Ge and SiGe alloys.Nature2020,580, 205–209

  22. [30]

    S.; Preciado, E.; Klee, V.; Bobek, S.; Yamaguchi, K.; Li, E.; Oden- thal, P

    Ma, Q.; Isarraraz, M.; Wang, C. S.; Preciado, E.; Klee, V.; Bobek, S.; Yamaguchi, K.; Li, E.; Oden- thal, P. M.; Nguyen, A.; others Postgrowth tuning of the bandgap of single-layer molybdenum disulfide films by sulfur/selenium exchange.ACS Nano2014,8, 4672– 4677

  23. [31]

    R.; Shi, G.; Lin, J.; Naj- maei, S.; Lin, Z.; El´ ıas, A

    Gong, Y.; Liu, Z.; Lupini, A. R.; Shi, G.; Lin, J.; Naj- maei, S.; Lin, Z.; El´ ıas, A. L.; Berkdemir, A.; You, G.; others Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide.Nano letters 2014,14, 442–449

  24. [32]

    Li, H.; Duan, X.; Wu, X.; Zhuang, X.; Zhou, H.; Zhang, Q.; Zhu, X.; Hu, W.; Ren, P.; Guo, P.; oth- ers Growth of alloy MoS2 x Se2 (1–x) nanosheets with fully tunable chemical compositions and optical proper- ties.Journal of the American Chemical Society2014, 136, 3756–3759

  25. [33]

    Advanced Materials2014,26, 2648–2653

    Feng, Q.; Zhu, Y.; Hong, J.; Zhang, M.; Duan, W.; Mao,N.; Wu,J.; Xu,H.; Dong,F.; Lin,F.; othersGrowth of large-area 2D MoS2 (1-x) Se2x semiconductor alloys. Advanced Materials2014,26, 2648–2653

  26. [34]

    Zhang, M.; Wu, J.; Zhu, Y.; Dumcenco, D. O.; Hong, J.; Mao, N.; Deng, S.; Chen, Y.; Yang, Y.; Jin, C.; oth- ers Two-dimensional molybdenum tungsten diselenide al- loys: photoluminescence, Raman scattering, and electri- cal transport.ACS Nano2014,8, 7130–7137

  27. [35]

    O.; Liu, Z.; Suenaga, K.; Wang, D.; Shuai, Z.; Huang, Y.-S.; Xie, L

    Chen, Y.; Xi, J.; Dumcenco, D. O.; Liu, Z.; Suenaga, K.; Wang, D.; Shuai, Z.; Huang, Y.-S.; Xie, L. Tunable band gap photoluminescence from atomically thin transition- metal dichalcogenide alloys.ACS Nano2013,7, 4610– 4616

  28. [36]

    C.; Amand, T.; Marie, X.; Tongay, S.; others Spin-orbit engineering in transition metal dichalcogenide alloy monolayers.Nature Commu- nications2015,6, 10110

    Wang, G.; Robert, C.; Suslu, A.; Chen, B.; Yang, S.; Alamdari, S.; Gerber, I. C.; Amand, T.; Marie, X.; Tongay, S.; others Spin-orbit engineering in transition metal dichalcogenide alloy monolayers.Nature Commu- nications2015,6, 10110

  29. [37]

    M.; Liu, F.; Liu, Z.; Shen, Z

    Zheng, S.; Sun, L.; Yin, T.; Dubrovkin, A. M.; Liu, F.; Liu, Z.; Shen, Z. X.; Fan, H. J. Monolayers of WxMo1- xS2 alloy heterostructure with in-plane composition vari- ations.Applied Physics Letters2015,106

  30. [38]

    Komsa, H.-P.; Krasheninnikov, A. V. Two-dimensional transition metal dichalcogenide alloys: stability and elec- tronic properties.The journal of physical chemistry let- ters2012,3, 3652–3656

  31. [39]

    A.; Kochat, V.; Apte, A.; Vajtai, R.; Idrobo, J

    Susarla, S.; Kutana, A.; Hachtel, J. A.; Kochat, V.; Apte, A.; Vajtai, R.; Idrobo, J. C.; Yakobson, B. I.; Ti- wary, C. S.; Ajayan, P. M. Quaternary 2D transition metal dichalcogenides (TMDs) with tunable bandgap. Advanced Materials2017,29, 1702457

  32. [40]

    ACS Nano2020,14, 9873–9883

    Liu, S.; Granados del ´Aguila, A.; Liu, X.; Zhu, Y.; Han, Y.; Chaturvedi, A.; Gong, P.; Yu, H.; Zhang, H.; Yao, W.; others Room-temperature valley polarization in atomicallythinsemiconductorsviachalcogenidealloying. ACS Nano2020,14, 9873–9883

  33. [41]

    Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications

    Xie, L. Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications. Nanoscale2015,7, 18392–18401

  34. [42]

    Growth of MoS2 (1–x) Se2 x (x= 0.41–1.00) monolayer alloys with controlled morphology by physi- cal vapor deposition.ACS Nano2015,9, 7450–7455

    Feng, Q.; Mao, N.; Wu, J.; Xu, H.; Wang, C.; Zhang, J.; Xie, L. Growth of MoS2 (1–x) Se2 x (x= 0.41–1.00) monolayer alloys with controlled morphology by physi- cal vapor deposition.ACS Nano2015,9, 7450–7455

  35. [43]

    Synthesis and enhanced electrochemical catalytic performance of monolayer WS2 (1–x) Se2x with a tunable band gap.Advanced Materials 2015,27, 4732–4738

    Fu, Q.; Yang, L.; Wang, W.; Han, A.; Huang, J.; Du, P.; Fan, Z.; Zhang, J.; Xiang, B. Synthesis and enhanced electrochemical catalytic performance of monolayer WS2 (1–x) Se2x with a tunable band gap.Advanced Materials 2015,27, 4732–4738

  36. [44]

    Monolayer semicon- ducting transition metal dichalcogenide alloys: Stability and band bowing.Journal of Applied Physics2013,113

    Kang, J.; Tongay, S.; Li, J.; Wu, J. Monolayer semicon- ducting transition metal dichalcogenide alloys: Stability and band bowing.Journal of Applied Physics2013,113

  37. [45]

    Goryca, M.; Li, J.; Stier, A. V.; Taniguchi, T.; Watan- abe, K.; Courtade, E.; Shree, S.; Robert, C.; Ur- baszek, B.; Marie, X.; others Revealing exciton masses and dielectric properties of monolayer semiconductors withhighmagneticfields.Nature Communications2019, 10 10, 4172

  38. [46]

    Large excitonic effects in mono- layers of molybdenum and tungsten dichalcogenides

    Ramasubramaniam, A. Large excitonic effects in mono- layers of molybdenum and tungsten dichalcogenides. Physical Review B—Condensed Matter and Materials Physics2012,86, 115409

  39. [47]

    W.; Fern´ andez-Rossier, J

    Ko´ smider, K.; Gonz´ alez, J. W.; Fern´ andez-Rossier, J. Large spin splitting in the conduction band of transi- tion metal dichalcogenide monolayers.Physical Review B2013,88, 245436

  40. [48]

    D.; Fal’ko, V

    Korm´ anyos, A.; Burkard, G.; Gmitra, M.; Fabian, J.; Z´ olyomi, V.; Drummond, N. D.; Fal’ko, V. k·p the- ory for two-dimensional transition metal dichalcogenide semiconductors.2D Materials2015,2, 022001

  41. [49]

    The constitution of the mixed crystals and the filling of space of the atoms.Zeitschrift Fur Physik 1921,5, 17–26

    Vegard, L. The constitution of the mixed crystals and the filling of space of the atoms.Zeitschrift Fur Physik 1921,5, 17–26

  42. [50]

    R.; Ashcroft, N

    Denton, A. R.; Ashcroft, N. W. Vegard’s law.Physical Review A1991,43, 3161

  43. [51]

    S.; Kang, J.; Fan, W.; Ko, C.; Luce, A

    Tongay, S.; Narang, D. S.; Kang, J.; Fan, W.; Ko, C.; Luce, A. V.; Wang, K. X.; Suh, J.; Patel, K.; Pathak, V.; others Two-dimensional semiconductor alloys: Mono- layer Mo1- xWxSe2.Applied Physics Letters2014,104

  44. [52]

    I.; Zhong, Y.; Che, Z.; Konuk, Y

    Bendavid, L. I.; Zhong, Y.; Che, Z.; Konuk, Y. Strain- engineering in two-dimensional transition metal dichalco- genide alloys.Journal of Applied Physics2022,132

  45. [53]

    Yin, W.-J.; Gong, X.-G.; Wei, S.-H. Origin of the un- usually large band-gap bowing and the breakdown of the band-edge distribution rule in the Sn x Ge 1- x al- loys.Physical Review B—Condensed Matter and Materi- als Physics2008,78, 161203

  46. [54]

    Y.; Cheng, Y

    Zhu, Z. Y.; Cheng, Y. C.; Schwingenschl¨ ogl, U. Gi- ant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors.Physi- cal Review B—Condensed Matter and Materials Physics 2011,84, 153402

  47. [55]

    Sensitivity of excitonic transitions to tem- perature in monolayers of TMD alloys.The Journal of Physical Chemistry C2026,130, 1014–1022

    Ciesio lkiewicz-Klepek, K.; Kopaczek, J.; Serafi´ nczuk, J.; Kudrawiec, R. Sensitivity of excitonic transitions to tem- perature in monolayers of TMD alloys.The Journal of Physical Chemistry C2026,130, 1014–1022

  48. [56]

    P.; Chen, X

    O’donnell, K. P.; Chen, X. Temperature dependence of semiconductor band gaps.Applied Physics Letters1991, 58, 2924–2926

  49. [57]

    S.; Wu, S.; Yu, H.; Ghimire, N

    Ross, J. S.; Wu, S.; Yu, H.; Ghimire, N. J.; Jones, A. M.; Aivazian,G.; Yan,J.; Mandrus,D.G.; Xiao,D.; Yao,W.; others Electrical control of neutral and charged excitons in a monolayer semiconductor.Nature Communications 2013,4, 1474

  50. [58]

    T.; Currie, M.; Fried- man, A

    Kioseoglou, G.; Hanbicki, A. T.; Currie, M.; Fried- man, A. L.; Jonker, B. T. Optical polarization and in- tervalley scattering in single layers of MoS2 and MoSe2. Scientific Reports2016,6, 25041

  51. [59]

    Cadiz, F.; Courtade, E.; Robert, C.; Wang, G.; Shen, Y.; Cai, H.; Taniguchi, T.; Watanabe, K.; Carrere, H.; La- garde, D.; others Excitonic linewidth approaching the homogeneous limit in MoS 2-based van der Waals het- erostructures.Physical Review X2017,7, 021026

  52. [60]

    K.; Plo- chocka, P

    Mitioglu, A.; Galkowski, K.; Surrente, A.; Klopo- towski, L.; Dumcenco, D.; Kis, A.; Maude, D. K.; Plo- chocka, P. Magnetoexcitons in large area CVD-grown monolayer MoS 2 and MoSe 2 on sapphire.Physical Re- view B2016,93, 165412

  53. [61]

    Ashcroft, N.; Mermin, N.Solid State Physics; Cengage, 2021

  54. [62]

    Temperature dependent EXAFS study on tran- sition metal dichalcogenides MoX2 (X= S, Se, Te).Jour- nal of Physics: Condensed Matter2016,28, 325401

    Caramazza, S.; Marini, C.; Simonelli, L.; Dore, P.; Pos- torino, P. Temperature dependent EXAFS study on tran- sition metal dichalcogenides MoX2 (X= S, Se, Te).Jour- nal of Physics: Condensed Matter2016,28, 325401

  55. [63]

    Spin orientation of electrons as- sociated with the interband absorption of light in semi- conductors.Soviet Journal of Experimental and Theoret- ical Physics1971,33, 1053

    D’yakonov, M.; Perel, V. Spin orientation of electrons as- sociated with the interband absorption of light in semi- conductors.Soviet Journal of Experimental and Theoret- ical Physics1971,33, 1053

  56. [64]

    Exciton valley depolarization in monolayer transition-metal dichalcogenides.Physical Re- view B2020,101, 115307

    Yang, M.; Robert, C.; Lu, Z.; Van Tuan, D.; Smirnov, D.; Marie, X.; Dery, H. Exciton valley depolarization in monolayer transition-metal dichalcogenides.Physical Re- view B2020,101, 115307

  57. [65]

    Polarization analysis of excitons in monolayer and bilayer transition-metal dichalcogenides

    Dery, H.; Song, Y. Polarization analysis of excitons in monolayer and bilayer transition-metal dichalcogenides. Physical Review B2015,92, 125431

  58. [66]

    Lu, Z.; Rhodes, D.; Li, Z.; Van Tuan, D.; Jiang, Y.; Lud- wig, J.; Jiang, Z.; Lian, Z.; Shi, S.-F.; Hone, J.; others Magnetic field mixing and splitting of bright and dark excitons in monolayer MoSe2.2D Materials2020,7, 015017

  59. [67]

    R.; Bartos, M.; Watanabe, K.; Taniguchi, T.; others Measurement of the spin-forbidden dark excitons in MoS2 and MoSe2 mono- layers.Nature Communications2020,11, 4037

    Robert, C.; Han, B.; Kapuscinski, P.; Delhomme, A.; Faugeras, C.; Amand, T.; Molas, M. R.; Bartos, M.; Watanabe, K.; Taniguchi, T.; others Measurement of the spin-forbidden dark excitons in MoS2 and MoSe2 mono- layers.Nature Communications2020,11, 4037

  60. [68]

    P.; Urbaszek, B.; Amand, T.; Marie, X.; Gerber, I

    Echeverry, J. P.; Urbaszek, B.; Amand, T.; Marie, X.; Gerber, I. C. Splitting between bright and dark exci- tons in transition metal dichalcogenide monolayers.Phys. Rev. B2016,93, 121107(R)

  61. [69]

    Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent.Journal of Crystal Growth2007,303, 525–529

    Taniguchi, T.; Watanabe, K. Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent.Journal of Crystal Growth2007,303, 525–529

  62. [70]

    Guide to optical spectroscopy of layered semi- conductors.Nature Reviews Physics2021,3, 39–54

    Shree, S.; Paradisanos, I.; Marie, X.; Robert, C.; Ur- baszek, B. Guide to optical spectroscopy of layered semi- conductors.Nature Reviews Physics2021,3, 39–54

  63. [71]

    Cao, T.; Wang, G.; Han, W.; Ye, H.; Zhu, C.; Shi, J.; Niu, Q.; Tan, P.; Wang, E.; Liu, B.; others Valley- selective circular dichroism of monolayer molybdenum disulphide.Nature Communications2012,3, 887

  64. [72]

    Ab initio molecular dynamics for liquid metals.Physical Review B1993,47, 558

    Kresse, G.; Hafner, J. Ab initio molecular dynamics for liquid metals.Physical Review B1993,47, 558

  65. [73]

    Efficient iterative schemes for ab initio total-energy calculations using a plane-wave ba- sis set.Physical Review B1996,54, 11169

    Kresse, G.; Furthm¨ uller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave ba- sis set.Physical Review B1996,54, 11169

  66. [74]

    P.; Burke, K.; Ernzerhof, M

    Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized gra- dient approximation made simple.Physical Review Let- ters1996,77, 3865

  67. [75]

    A con- sistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 ele- ments H-Pu.The Journal of chemical physics2010,132

    Grimme, S.; Antony, J.; Ehrlich, S.; Krieg, H. A con- sistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 ele- ments H-Pu.The Journal of chemical physics2010,132

  68. [76]

    Bl¨ ochl, P. E. Projector augmented-wave method.Physi- cal Review B1994,50, 17953

  69. [77]

    From ultrasoft pseudopotentials to the projector augmented-wave method.Physical Re- view B1999,59, 1758

    Kresse, G.; Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method.Physical Re- view B1999,59, 1758

  70. [78]

    SimplySQS: An Automated and Re- producible Workflow for Special Quasirandom Structure Generation with ATAT.Journal of Computational Sci- ence2026, 102846

    Lebeda, M.; Drahokoupil, J.; Vlˇ c´ ak, P.; Svoboda,ˇS.; van de Walle, A. SimplySQS: An Automated and Re- producible Workflow for Special Quasirandom Structure Generation with ATAT.Journal of Computational Sci- ence2026, 102846

  71. [79]

    Efficient stochastic generation of special quasirandom structures.Calphad2013,42, 13–18

    vandeWalle,A.; Tiwary,P.; deJong,M.; Olmsted,D.L.; Asta, M.; Dick, A.; Shin, D.; Wang, Y.; Chen, L.- 11 Q.; Liu, Z.-K. Efficient stochastic generation of special quasirandom structures.Calphad2013,42, 13–18

  72. [80]

    VanDeWalle,A.; Asta,M.; Ceder,G.Thealloytheoretic automated toolkit: A user guide.Calphad2002,26, 539– 553

  73. [81]

    VASPKIT: A user-friendly interface facilitating high- throughput computing and analysis using VASP code

    Wang, V.; Xu, N.; Liu, J.-C.; Tang, G.; Geng, W.- T. VASPKIT: A user-friendly interface facilitating high- throughput computing and analysis using VASP code. Computer Physics Communications2021,267, 108033

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