Paper Citation Record · LEDGER

High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

As of 13 August 2026, this Paper Citation Record lists 6 of 6 outbound references and 1 inbound Pith citation observation for arXiv:2607.10907.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2607.10907 v1

Coverage vector

measured 6 of 6 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-07-14T08:23:38.485564Z

measured 7 of 7 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-13T06:32:02.005865+00:00

measured 1 of 1 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links, observed 2026-08-11T04:17:51.814185Z

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: pith, observed 2026-08-11T04:17:51.951656Z

Reference resolution

6 of 6 outbound references displayed

verified exact5
verified fuzzy0
unresolved1
parse uncertain0
malformed identifier0
metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 51cec551-49f2-424a-964e-f9f2fa8e559b · outbound

This paper cites HVPE Growth of Si-Doped $\beta$-Ga$_2$O$_3$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties.

High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics HVPE Growth of Si-Doped $\beta$-Ga$_2$O$_3$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

Reference 1

Resolution: unresolved; no resolver link, observed 2026-07-14T08:23:38.485564Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 595c965c-5c25-44b6-8b87-870887381180 · outbound

This paper cites (16) Khan, S.

High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics (16) Khan, S

Reference 2

Resolution: verified exact; doi, observed 2026-07-14T08:30:25.179379Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation ac96258d-c1a9-4b16-b983-dddd1c602a7e · outbound

This paper cites A.; Saha, S.; Singisetti, U.; Bhuiyan, A.

High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics A.; Saha, S.; Singisetti, U.; Bhuiyan, A

Reference 3

Resolution: verified exact; doi, observed 2026-07-14T08:30:25.183323Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 5596c670-07ad-423d-99a9-ad4187c84c36 · outbound

This paper cites G.; Shimamura, K.; Yoshikawa, Y .; Ujiie, T.; Aoki, K.

High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics G.; Shimamura, K.; Yoshikawa, Y .; Ujiie, T.; Aoki, K

Reference 4

Resolution: verified exact; doi, observed 2026-07-14T08:30:25.195676Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 48780179-27cb-4845-b102-423a7df3f54b · outbound

This paper cites Mist-chemical vapor deposition grown Ge-doped α-Ga2O3 thin films with high electron mobility.

High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics Mist-chemical vapor deposition grown Ge-doped α-Ga2O3 thin films with high electron mobility

Reference 5

Resolution: verified exact; doi, observed 2026-07-14T08:30:25.199747Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 66d37bd2-ebe9-457c-9d7b-b707c564c67e · outbound

This paper cites K.; Cheung, N.

High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics K.; Cheung, N

Reference 6

Resolution: verified exact; doi, observed 2026-07-14T08:30:25.192168Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Pith citing papers

Observation b47077d9-48cf-4472-93c2-8b84750345f3 · inbound

Sn-Doping in LPCVD-Grown (010) $\beta$-Ga$_2$O$_3$ Films cites this paper.

Sn-Doping in LPCVD-Grown (010) $\beta$-Ga$_2$O$_3$ Films High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Reference 2026

Resolution: verified exact; local_arxiv, observed 2026-08-11T04:17:51.956284Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.