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Doping Dependent Density of States and Pseudogap Behavior in La2-xSrxCuO4

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arxiv cond-mat/9806341 v2 pith:CL2WI7FO submitted 1998-06-29 cond-mat.supr-con cond-mat.str-el

classification cond-mat.supr-concond-mat.str-el
keywords pseudogapcoefficientdensityla2-xsrxcuo4statesx-dependencebehaviorcharacteristic
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We have made a high-resolution photoemission study of La2-xSrxCuO4 in a wide hole concentration (x) range from a heavily overdoped metal to an undoped insulator. As x decreases, the spectral density of states at the chemical potential (\mu) is suppressed with an x-dependence similar to the suppression of the electronic specific heat coefficient. In the underdoped region, the spectra show a pseudogap structure on the energy scale of 0.1 eV. The width of the pseudogap increases with decreasing x following the x-dependence of the characteristic temperatures of the magnetic susceptibility and the Hall coefficient.

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