Pith. sign in

REVIEW

Suppressing twin formation in Bi2Se3 thin films

Not yet reviewed by Pith; the record is open.

Re-run · record.json Download PDF Read on arXiv ↗

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 1503.06498 v1 pith:CRQKOYOD submitted 2015-03-22 cond-mat.mtrl-sci

N. V. Tarakina , S. Schreyeck , M. Luysberg , S. Grauer , C. Schumacher , G. Karczewski , K. Brunner , C. Gould
show 3 more authors
H. Buhmann R. E. Dunin-Borkowski L. W. Molenkamp
This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords filmsbi2se3substratethintwinformationmicroscopysubstrates
verification ladder T0 review T1 audit T2 compute T3 formal
0 comments
read the original abstract

The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defects that persist in the "twin-free" films is an antiphase domain boundary, which is associated with variations in substrate height. It is also shown that the substrate surface termination determines which family of twin domains dominates.

Discussion (0). Continue with ORCID to comment.

Pith tools