Giant Dielectric Permittivity of Electron-Doped Manganite Thin Films, Ca(1-x)La(x)MnO(3) ($0<= x<= 0.03)

J. J. Neumeier; J. L. Cohn; M. Peterca

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Giant Dielectric Permittivity of Electron-Doped Manganite Thin Films, Ca(1-x)La(x)MnO(3) ($0<= x<= 0.03)

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arxiv cond-mat/0411085 v1 pith:CTCZ6IZ2 submitted 2004-11-03 cond-mat.str-el cond-mat.mtrl-sci

J. L. Cohn , M. Peterca , J. J. Neumeier This is my paper · ORCID

classification cond-mat.str-elcond-mat.mtrl-sci

keywords dielectricfilmsgiantiblcthinattributedbarrier-layerboundaries

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A giant low-frequency, in-plane dielectric constant, eps~10^6, for epitaxial thin films of Ca(1-x)La(x)MnO(3) (x<=0.03) was observed over a broad temperature range, 4K <= T 300K. This phenomenon is attributed to an internal barrier-layer capacitor (IBLC) structure, with insulating boundaries between semiconducting grains. The room-temperature eps increases substantially with electron (La) doping. The measured values of eps exceed those of conventional two-phase IBLC materials based on (Ba,Sr)TiO(3) as well as recently discovered CaCu(3)Ti(4)O(12) and (Li,Ti) doped NiO.

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