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Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO

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arxiv 2209.07765 v2 pith:DP5DZZLL submitted 2022-09-16 physics.ins-det

Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO

G. Gallina , Y. Guan , F. Retiere , G. Cao , A. Bolotnikov , I. Kotov , S. Rescia , A.K. Soma
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T. Tsang L. Darroch T. Brunner J. Bolster J. R. Cohen T. Pinto Franco W. C. Gillis H. Peltz Smalley S. Thibado A. Pocar A. Bhat A. Jamil D. C. Moore G. Adhikari S. Al Kharusi E. Angelico I. J. Arnquist P. Arsenault I. Badhrees J. Bane V. Belov E. P. Bernard T. Bhatta J. P. Brodsky E. Brown E. Caden L. Cao C. Chambers B. Chana S. A. Charlebois D. Chernyak M. Chiu B. Cleveland R. Collister M.Cvitan J. Dalmasson T. Daniels K. Deslandes R. DeVoe M. L. di Vacri Y. Ding M. J. Dolinski A. Dragone J. Echevers B. Eckert M. Elbeltagi L. Fabris W. Fairbank J. Farine Y. S. Fu D. Gallacher P. Gautam G. Giacomini C. Gingras D. Goeldi R. Gornea G. Gratta C. A. Hardy S. Hedges M. Heffner E. Hein J. Holt E. W. Hoppe J. H\"o{\ss}l A. House W. Hunt A. Iverson X. S. Jiang A. Karelin L. J. Kaufman R. Kr\"ucken A. Kuchenkov K. S. Kumar A. Larson K. G. Leach B. G. Lenardo D. S. Leonard G. Lessard G. Li S. Li Z. Li C. Licciardi R. Lindsay R. MacLellan M. Mahtab S. Majidi C. Malbrunot P. Margetak P. Martel-Dion L. Martin J. Masbou N. Massacret K. McMichael B. Mong K. Murray J. Nattress C. R. Natzke X. E. Ngwadla J. C. Nzobadila Ondze A. Odian J. L. Orrell G. S. Ortega C. T. Overman S. Parent A. Perna A. Piepke N. Pletskova J. F. Pratte V. Radeka E. Raguzin G. J. Ramonnye T. Rao H. Rasiwala K. Raymond B. M. Rebeiro G. Richardson J. Ringuette V. Riot T. Rossignol P. C. Rowson L. Rudolph R. Saldanha S. Sangiorgio X. Shang F. Spadoni V. Stekhanov X. L. Sun A. Tidball T. Totev S. Triambak R. H. M. Tsang O. A. Tyuka F. Vachon M. Vidal S. Viel G. Visser M. Wagenpfeil M. Walent K. Wamba Q. Wang W. Wang Y. Wang M. Watts W. Wei L. J. Wen U. Wichoski S. Wilde M. Worcester W. H. Wu X. Wu L. Xie W. Yan H. Yang L. Yang O. Zeldovich J. Zhao T. Ziegler
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classification physics.ins-det
keywords nexobetadecaydesignliquidresolutionxenondesigned
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Liquid xenon time projection chambers are promising detectors to search for neutrinoless double beta decay (0$\nu \beta \beta$), due to their response uniformity, monolithic sensitive volume, scalability to large target masses, and suitability for extremely low background operations. The nEXO collaboration has designed a tonne-scale time projection chamber that aims to search for 0$\nu \beta \beta$ of \ce{^{136}Xe} with projected half-life sensitivity of $1.35\times 10^{28}$~yr. To reach this sensitivity, the design goal for nEXO is $\leq$1\% energy resolution at the decay $Q$-value ($2458.07\pm 0.31$~keV). Reaching this resolution requires the efficient collection of both the ionization and scintillation produced in the detector. The nEXO design employs Silicon Photo-Multipliers (SiPMs) to detect the vacuum ultra-violet, 175 nm scintillation light of liquid xenon. This paper reports on the characterization of the newest vacuum ultra-violet sensitive Fondazione Bruno Kessler VUVHD3 SiPMs specifically designed for nEXO, as well as new measurements on new test samples of previously characterised Hamamatsu VUV4 Multi Pixel Photon Counters (MPPCs). Various SiPM and MPPC parameters, such as dark noise, gain, direct crosstalk, correlated avalanches and photon detection efficiency were measured as a function of the applied over voltage and wavelength at liquid xenon temperature (163~K). The results from this study are used to provide updated estimates of the achievable energy resolution at the decay $Q$-value for the nEXO design.

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Cited by 2 Pith papers

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  1. Performance of FBK VUV-HD3 and HPK VUV4 SiPMs in the Light-only Liquid Xenon (LoLX) Detector

    physics.ins-det 2025-10 unverdicted novelty 5.0

    In liquid xenon, HPK VUV4 SiPMs detect 33-38% less light than FBK VUV-HD3 devices; the gap matches data only after an angular/wavelength-dependent PDE model that includes surface shadowing is used in the optical simulation.

  2. Performance of FBK VUV-HD3 and HPK VUV4 SiPMs in the Light-only Liquid Xenon (LoLX) Detector

    physics.ins-det 2025-10 conditional novelty 5.0

    In-situ comparison in liquid xenon finds HPK VUV4 SiPMs detect 33–38% less scintillation light than FBK VUV-HD3 SiPMs, attributed to surface shadowing at oblique photon incidence.