Decoupling Graphene from SiC(0001) via Oxidation
classification
❄️ cond-mat.mtrl-sci
keywords
graphenelayerbufferpi-bandssubstratebondingcarboncmos-compatible
pith:DT5UTNBI Add to your LaTeX paper
What is a Pith Number?\usepackage{pith}
\pithnumber{DT5UTNBI}
Prints a linked pith:DT5UTNBI badge after your title and writes the identifier into PDF metadata. Compiles on arXiv with no extra files. Learn more
read the original abstract
When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable electrical properties of graphene. The conductivity is poor due to a disruption of the graphene pi-bands by covalent bonding to the SiC substrate. Here we show that it is possible to restore the graphene pi-bands by inserting a thin oxide layer between the buffer layer and SiC substrate using a low temperature, CMOS-compatible process that does not damage the graphene layer.
This paper has not been read by Pith yet.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.