REVIEW
Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities
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classification
cond-mat.mtrl-sciphysics.app-ph
keywords
bulkdensitiesdislocationphotoluminescencethreadingcandidatescharacterizedcounterparts
read the original abstract
Bulk Ge crystals, characterized by significantly lower threading dislocation densities than their epitaxial counterparts, emerge as optimal candidates for studying and improving Ge laser performance. Our study focused on the Ge thickness and TDD impacts on Ge photoluminescence.
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