Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

C. Gould; C. R\"uster; D. Keller; G. Schmidt; L. W. Molenkamp; R. Fiederling; T. Slobodskyy; W. Ossau

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Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

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arxiv cond-mat/0410540 v1 pith:E2DEFDVG submitted 2004-10-21 cond-mat.mtrl-sci

T. Slobodskyy , C. Rüster , R. Fiederling , D. Keller , C. Gould , W. Ossau , G. Schmidt , L. W. Molenkamp This is my paper · ORCID

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keywords beenepitaxygrowthmolecular-beampropertiesas-passivatedassessedcrystalline

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We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

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