pith. sign in

arxiv: 1412.2090 · v1 · pith:FIL45BGXnew · submitted 2014-12-05 · ❄️ cond-mat.mtrl-sci

Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials

classification ❄️ cond-mat.mtrl-sci
keywords few-layermaterialsdensitybandband-edgebilayerfunctiongraphene
0
0 comments X
read the original abstract

The valence band of a variety of few-layer, two-dimensional materials consists of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a `Mexican hat' or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III-VI materials GaS, GaSe, InS, InSe, for Bi$_{2}$Se$_{3}$, for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III-VI materials and Bi$_{2}$Se$_{3}$ is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.